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    • 3. 发明授权
    • Method of crystal ribbon growth
    • 晶体带生长方法
    • US5055157A
    • 1991-10-08
    • US475395
    • 1990-02-05
    • Carl E. Bleil
    • Carl E. Bleil
    • C30B13/00C30B13/18C30B29/64
    • C30B29/06C30B13/18Y10S117/912Y10T117/1048Y10T117/1068
    • Crystals are grown in ribbon shapes by an apparatus for supporting a film of source material, capacitive electrodes contacting the film and heat pipes in thermal contact with the electrodes for first heating the material through the electrodes to near its melting temperature and then for controllably cooling the electrodes, an rf heater using the electrodes for melting the film in a zone, a heat pipe for causing solidification along one surface of the melt zone to form a ribbon, a pulling mechanism for moving the ribbon from the melt zone, a heater for melting bulk replenishing material to replenish the melt, and an auxiliary heating device for heating the ribbon after leaving the zone to prevent dendritic growth by maintaining low axial temperature gradients.
    • 晶体通过用于支撑源材料的膜,与膜接触的电容电极和与电极热接触的热管的装置生长成带状,用于首先将材料通过电极加热至接近其熔融温度,然后可控地冷却 电极,使用用于熔化区域中的膜的电极的rf加热器,用于使熔融区域的一个表面固化以形成带状物的热管,用于使熔融区域移动的拉动机构,用于熔化的加热器 用于补充熔体的大量补充材料和用于在离开区域之后加热带的辅助加热装置,以通过保持低的轴向温度梯度来防止树突生长。
    • 4. 发明授权
    • Method and apparatus for crystal ribbon growth
    • 晶体带生长的方法和装置
    • US5229083A
    • 1993-07-20
    • US732164
    • 1991-07-18
    • Carl E. Bleil
    • Carl E. Bleil
    • C30B13/00C30B13/18
    • C30B29/06C30B13/18Y10T117/1008Y10T117/1048Y10T117/1068
    • Crystals are grown in ribbon shapes by an apparatus for supporting a film of source material, capacitive electrodes contacting the film and heat pipes in thermal contact with the electrodes for first heating the material through the electrodes to near its melting temperature and then for controllably cooling the electrodes, an rf heater using the electrodes for melting the film in a zone, a heat pipe for causing solidification along one surface of the melt zone to form a ribbon, a pulling mechanism for moving the ribbon from the melt zone, a heater for melting bulk replenishing material to replenish the melt, and an auxiliary heating device for heating the ribbon after leaving the zone to prevent dendritic growth by maintaining low axial temperature gradients.
    • 晶体通过用于支撑源材料的膜,与膜接触的电容电极和与电极热接触的热管的装置生长成带状,用于首先将材料通过电极加热至接近其熔融温度,然后可控地冷却 电极,使用用于熔化区域中的膜的电极的rf加热器,用于使熔融区域的一个表面固化以形成带状物的热管,用于使熔融区域移动的拉动机构,用于熔化的加热器 用于补充熔体的大量补充材料和用于在离开区域之后加热带的辅助加热装置,以通过保持低的轴向温度梯度来防止树突生长。
    • 5. 发明授权
    • Method and apparatus for crystal ribbon growth
    • 晶体带生长的方法和装置
    • US5069742A
    • 1991-12-03
    • US475398
    • 1990-02-05
    • Carl E. Bleil
    • Carl E. Bleil
    • C30B13/20C30B13/30
    • C30B13/30C30B13/20Y10T117/1048
    • Crystals are grown in ribbon shapes by an apparatus for supporting a film of source material, capacitive electrodes contacting the film and heat pipes in thermal contact with the electrodes for first heating the material through the electrodes to near its melting temperature and then for controllably cooling the electrodes, an rf heater using the electrodes for melting the film in a zone, a heat pipe for causing solidification along one surface of the melt zone to form a ribbon, a pulling mechanism for moving the ribbon from the melt zone, a heater for melting bulk replenishing material to replenish the melt, and an auxiliary heating device for heating the ribbon after leaving the zone to prevent dendritic growth by maintaining low axial temperature gradients.
    • 晶体通过用于支撑源材料的膜,与膜接触的电容电极和与电极热接触的热管的装置生长成带状,用于首先将材料通过电极加热至接近其熔融温度,然后可控地冷却 电极,使用用于熔化区域中的膜的电极的rf加热器,用于使熔融区域的一个表面固化以形成带状物的热管,用于使熔融区域移动的拉动机构,用于熔化的加热器 用于补充熔体的大量补充材料和用于在离开区域之后加热带的辅助加热装置,以通过保持低的轴向温度梯度来防止树突生长。
    • 6. 发明授权
    • Apparatus for zone regrowth of crystal ribbons
    • 水晶带重新生长的装置
    • US4873063A
    • 1989-10-10
    • US172760
    • 1988-03-28
    • Carl E. Bleil
    • Carl E. Bleil
    • C30B13/00C30B13/20C30B13/22C30B13/30C30B29/64
    • C30B13/30C30B13/00C30B13/005C30B13/20C30B13/22C30B29/60Y10T117/1048
    • Apparatus for producing crystalline ribbons of a material from a "crucible-less" configuration of bodies of the material including possible deposition on a substrate. Means for capacitively coupling electromagnetic energy into a source body of material are provided to appropriately induce electrical current gradients in order to control and restrict the molten zone and supress net loss of the heat of fusion from the balance of the ribbon-like body. The melt zone is replenished from any direction with ribbon or a bulk source to sustain the shape and size of the growing ribbon-like body. The heat of crystallization is selectively removed by a heat sink from one end of the melt zone in a direction substantially perpendicular to the direction of pulling.
    • 用于从材料的“无坩埚”构造形成材料的结晶带的装置,包括可能沉积在基底上。 提供用于将电磁能量电容耦合到材料源体中的装置以适当地诱导电流梯度,以便控制和限制熔融区域并且抑制熔融热从带状体的平衡中的净损失。 熔融区域从带状物或块体的任何方向补充以维持生长的带状物体的形状和尺寸。 结晶的热量通过来自熔融区域的一端的大致垂直于拉伸方向的散热器选择性地去除。