专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10397986B2 Heat generation apparatus using permanent magnets 有权
公开(公告)号：US10397986B2
公开(公告)日：2019-08-27
申请号：US15581532
申请日：2017-04-28
申请人： Tae Jin Kim , Byung Duk Lee
发明人： Tae Jin Kim , Byung Duk Lee , Jae Kook Ko
IPC分类号： H05B6/10 , H02K1/27 , H02K5/16 , H02K16/00 , H02K49/04 , H02K53/00 , H02K7/14 , H02K1/28 , H02K7/10
摘要： Disclosed herein is a heat generation apparatus using permanent magnets. The heat generation apparatus using permanent magnets includes: a plurality of rotors fixedly mounted on a rotating shaft, and configured such that they are rotatable along with the rotating shaft with permanent magnets disposed thereon at predetermined intervals; a heat generation part configured such that the rotors are contained therein to thus form a predetermined gap between the heat generation part and the rotors, and adapted to generate heat while the permanent magnets are being rotated; a motor configured to serve as a source for the rotation of the rotating shaft; and a power transmission means configured to transfer the rotation force of the motor to the rotating shaft.

2. 发明申请

US20180077759A1 HEAT GENERATION APPARATUS USING PERMANENT MAGNETS 审中-公开
公开(公告)号：US20180077759A1
公开(公告)日：2018-03-15
申请号：US15581532
申请日：2017-04-28
申请人： Tae Jin KIM , Byung Duk LEE
发明人： Tae Jin KIM , Byung Duk LEE , Jae Kook KO
IPC分类号： H05B6/10 , H02K16/00 , H02K5/16 , H02K1/27
CPC分类号： H05B6/109 , H02K1/2746 , H02K1/276 , H02K1/2773 , H02K1/28 , H02K5/16 , H02K7/1004 , H02K7/14 , H02K16/005 , H02K49/043 , H02K53/00 , H02K2213/03 , H05B6/108
摘要： Disclosed herein is a heat generation apparatus using permanent magnets. The heat generation apparatus using permanent magnets includes: a plurality of rotors fixedly mounted on a rotating shaft, and configured such that they are rotatable along with the rotating shaft with permanent magnets disposed thereon at predetermined intervals; a heat generation part configured such that the rotors are contained therein to thus form a predetermined gap between the heat generation part and the rotors, and adapted to generate heat while the permanent magnets are being rotated; a motor configured to serve as a source for the rotation of the rotating shaft; and a power transmission means configured to transfer the rotation force of the motor to the rotating shaft.

3. 发明申请

US20100044797A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100044797A1
公开(公告)日：2010-02-25
申请号：US12344159
申请日：2008-12-24
申请人： Byung-Duk LEE
发明人： Byung-Duk LEE
IPC分类号： H01L29/78 , H01L21/28
CPC分类号： H01L29/66621 , H01L29/42376 , H01L29/66477 , H01L29/7831
摘要： A semiconductor device with reduced contact resistance between a substrate and a plug includes a gate electrode disposed over the substrate, the plug formed over the substrate at both sides of the gate electrode and having a sidewall with a positive slope, a capping layer disposed between the gate electrode and the plug, and a gate hard mask layer whose sidewall disposed over the gate electrode is extended to a top surface of the capping layer. By employing the capping layer having a sidewall with a negative slope, the plug having the sidewall with a positive slope can be formed regardless of a shape or profile of the sidewall of the gate electrode. As a result, the contact area between the substrate and the plug is increased.
摘要翻译：具有降低的基板和插头之间的接触电阻的半导体器件包括设置在基板上的栅电极，该插塞形成在栅电极两侧的基板上并具有正斜率的侧壁，盖层设置在栅电极和插塞，以及栅极硬掩模层，其栅极电极上方的侧壁延伸到覆盖层的顶表面。通过使用具有负斜率的侧壁的封盖层，可以形成具有正斜率的侧壁的插塞，而不管栅电极的侧壁的形状或轮廓如何。结果，衬底和插头之间的接触面积增加。

4. 发明授权

US08709931B2 Fuse part in semiconductor device and method for forming the same 有权
标题翻译：半导体装置中的保险丝部件及其形成方法
公开(公告)号：US08709931B2
公开(公告)日：2014-04-29
申请号：US13325851
申请日：2011-12-14
申请人： Byung-Duk Lee
发明人： Byung-Duk Lee
IPC分类号： H01L21/44
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A fuse part in a semiconductor device has a plurality of fuse lines extended along a first direction with a given width along a second direction. The fuse part includes a first conductive pattern having a space part formed in a fuse line region over a substrate, wherein portions of the first conductive pattern are spaced apart by the space part along the first direction. The fuse part includes a first insulation pattern formed over the space part, the first insulation pattern having a width smaller than a width of the first conductive pattern along the second direction and a thickness greater than a thickness of the first conductive pattern, and a second conductive pattern formed over the first insulation pattern, the second conductive pattern having a width greater than the width of the first insulation pattern along the second direction.
摘要翻译：半导体器件中的熔丝部分具有沿第一方向延伸的多条熔丝，沿着第二方向具有给定的宽度。熔丝部分包括第一导电图案，其具有形成在衬底上的熔丝线区域中的空间部分，其中第一导电图案的部分沿着第一方向由空间部分间隔开。熔丝部分包括形成在空间部分上的第一绝缘图案，第一绝缘图案的宽度小于第一导电图案沿着第二方向的宽度，并且厚度大于第一导电图案的厚度，第二绝缘图案导电图案形成在第一绝缘图案上，第二导电图案的宽度大于沿着第二方向的第一绝缘图案的宽度。

5. 发明申请

US20120088361A1 FUSE PART IN SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 有权
标题翻译：半导体器件中的保险丝部件及其形成方法
公开(公告)号：US20120088361A1
公开(公告)日：2012-04-12
申请号：US13325851
申请日：2011-12-14
申请人： Byung-Duk LEE
发明人： Byung-Duk LEE
IPC分类号： H01L21/768
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A fuse part in a semiconductor device has a plurality of fuse lines extended along a first direction with a given width along a second direction. The fuse part includes a first conductive pattern having a space part formed in a fuse line region over a substrate, wherein portions of the first conductive pattern are spaced apart by the space part along the first direction. The fuse part includes a first insulation pattern formed over the space part, the first insulation pattern having a width smaller than a width of the first conductive pattern along the second direction and a thickness greater than a thickness of the first conductive pattern, and a second conductive pattern formed over the first insulation pattern, the second conductive pattern having a width greater than the width of the first insulation pattern along the second direction.
摘要翻译：半导体器件中的熔丝部分具有沿第一方向延伸的多条熔丝，沿着第二方向具有给定的宽度。熔丝部分包括第一导电图案，其具有形成在衬底上的熔丝线区域中的空间部分，其中第一导电图案的部分沿着第一方向由空间部分间隔开。熔丝部分包括形成在空间部分上的第一绝缘图案，第一绝缘图案的宽度小于第一导电图案沿着第二方向的宽度，并且厚度大于第一导电图案的厚度，第二绝缘图案导电图案形成在第一绝缘图案上，第二导电图案的宽度大于沿着第二方向的第一绝缘图案的宽度。

6. 发明申请

US20120007184A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120007184A1
公开(公告)日：2012-01-12
申请号：US13237551
申请日：2011-09-20
申请人： Byung-Duk LEE
发明人： Byung-Duk LEE
IPC分类号： H01L29/78
CPC分类号： H01L29/66621 , H01L29/42376 , H01L29/66477 , H01L29/7831
摘要： A semiconductor device with reduced contact resistance between a substrate and a plug includes a gate electrode disposed over the substrate, the plug formed over the substrate at both sides of the gate electrode and having a sidewall with a positive slope, a capping layer disposed between the gate electrode and the plug, and a gate hard mask layer whose sidewall disposed over the gate electrode is extended to a top surface of the capping layer. By employing the capping layer having a sidewall with a negative slope, the plug having the sidewall with a positive slope can be formed regardless of a shape or profile of the sidewall of the gate electrode. As a result, the contact area between the substrate and the plug is increased.
摘要翻译：具有降低的基板和插头之间的接触电阻的半导体器件包括设置在基板上的栅电极，该插塞形成在栅电极两侧的基板上并具有正斜率的侧壁，盖层设置在栅电极和插塞，以及栅极硬掩模层，其栅极电极上方的侧壁延伸到覆盖层的顶表面。通过使用具有负斜率的侧壁的封盖层，可以形成具有正斜率的侧壁的插塞，而不管栅电极的侧壁的形状或轮廓如何。结果，衬底和插头之间的接触面积增加。

7. 发明授权

US08044467B2 Semiconductor device and method of fabricating the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08044467B2
公开(公告)日：2011-10-25
申请号：US12344159
申请日：2008-12-24
申请人： Byung-Duk Lee
发明人： Byung-Duk Lee
IPC分类号： H01L29/78
CPC分类号： H01L29/66621 , H01L29/42376 , H01L29/66477 , H01L29/7831
摘要： A semiconductor device with reduced contact resistance between a substrate and a plug includes a gate electrode disposed over the substrate, the plug formed over the substrate at both sides of the gate electrode and having a sidewall with a positive slope, a capping layer disposed between the gate electrode and the plug, and a gate hard mask layer whose sidewall disposed over the gate electrode is extended to a top surface of the capping layer. By employing the capping layer having a sidewall with a negative slope, the plug having the sidewall with a positive slope can be formed regardless of a shape or profile of the sidewall of the gate electrode. As a result, the contact area between the substrate and the plug is increased.
摘要翻译：具有降低的基板和插头之间的接触电阻的半导体器件包括设置在基板上的栅电极，该插塞形成在栅电极两侧的基板上并具有正斜率的侧壁，盖层设置在栅电极和插塞，以及栅极硬掩模层，其栅极电极上方的侧壁延伸到覆盖层的顶表面。通过使用具有负斜率的侧壁的封盖层，可以形成具有正斜率的侧壁的插塞，而不管栅电极的侧壁的形状或轮廓如何。结果，衬底和插头之间的接触面积增加。

8. 发明申请

US20090243033A1 FUSE PART IN SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME 有权
标题翻译：半导体器件中的保险丝部件及其形成方法
公开(公告)号：US20090243033A1
公开(公告)日：2009-10-01
申请号：US12344174
申请日：2008-12-24
申请人： Byung-Duk LEE
发明人： Byung-Duk LEE
IPC分类号： H01L23/525 , H01L21/71
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A fuse part in a semiconductor device has a plurality of fuse lines extended along a first direction with a given width along a second direction. The fuse part includes a first conductive pattern having a space part formed in a fuse line region over a substrate, wherein portions of the first conductive pattern are spaced apart by the space part along the first direction. The fuse part includes a first insulation pattern formed over the space part, the first insulation pattern having a width smaller than a width of the first conductive pattern along the second direction and a thickness greater than a thickness of the first conductive pattern, and a second conductive pattern formed over the first insulation pattern, the second conductive pattern having a width greater than the width of the first insulation pattern along the second direction.
摘要翻译：半导体器件中的熔丝部分具有沿第一方向延伸的多条熔丝，沿着第二方向具有给定的宽度。熔丝部分包括第一导电图案，其具有形成在衬底上的熔丝线区域中的空间部分，其中第一导电图案的部分沿着第一方向由空间部分间隔开。熔丝部分包括形成在空间部分上的第一绝缘图案，第一绝缘图案的宽度小于第一导电图案沿着第二方向的宽度，并且厚度大于第一导电图案的厚度，第二绝缘图案导电图案形成在第一绝缘图案上，第二导电图案的宽度大于沿着第二方向的第一绝缘图案的宽度。

9. 发明授权

US08097931B2 Fuse part in semiconductor device and method for forming the same 有权
标题翻译：半导体装置中的保险丝部件及其形成方法
公开(公告)号：US08097931B2
公开(公告)日：2012-01-17
申请号：US12344174
申请日：2008-12-24
申请人： Byung-Duk Lee
发明人： Byung-Duk Lee
IPC分类号： H01L23/52
CPC分类号： H01L23/5258 , H01L2924/0002 , H01L2924/00
摘要： A fuse part in a semiconductor device has a plurality of fuse lines extended along a first direction with a given width along a second direction. The fuse part includes a first conductive pattern having a space part formed in a fuse line region over a substrate, wherein portions of the first conductive pattern are spaced apart by the space part along the first direction. The fuse part includes a first insulation pattern formed over the space part, the first insulation pattern having a width smaller than a width of the first conductive pattern along the second direction and a thickness greater than a thickness of the first conductive pattern, and a second conductive pattern formed over the first insulation pattern, the second conductive pattern having a width greater than the width of the first insulation pattern along the second direction.
摘要翻译：半导体器件中的熔丝部分具有沿第一方向延伸的多条熔丝，沿着第二方向具有给定的宽度。熔丝部分包括第一导电图案，其具有形成在衬底上的熔丝线区域中的空间部分，其中第一导电图案的部分沿着第一方向由空间部分间隔开。熔丝部分包括形成在空间部分上的第一绝缘图案，第一绝缘图案的宽度小于第一导电图案沿着第二方向的宽度，并且厚度大于第一导电图案的厚度，第二绝缘图案导电图案形成在第一绝缘图案上，第二导电图案的宽度大于沿着第二方向的第一绝缘图案的宽度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式