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1. 发明授权

US07629227B1 CVD flowable gap fill 有权
标题翻译： CVD可流动缝隙填充
公开(公告)号：US07629227B1
公开(公告)日：2009-12-08
申请号：US11925514
申请日：2007-10-26
申请人： Feng Wang , Victor Y. Lu , Brian Lu , Wai-Fan Yau , Nerissa Draeger
发明人： Feng Wang , Victor Y. Lu , Brian Lu , Wai-Fan Yau , Nerissa Draeger
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e.g., a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.
摘要翻译：提供了通过产生可流动的含氧化硅膜在衬底上衬里和/或填充间隙的方法。所述方法包括将气相含硅前体和氧化剂反应物引入含有基材的反应室中，使得在基材上形成冷凝的可流动的膜。可流动膜至少部分地填充衬底上的间隙，然后转换成氧化硅膜。在某些实施方案中，所述方法包括在形成膜中使用催化剂，例如亲核试剂或鎓催化剂。催化剂可以并入到一种反应物中和/或作为单独的反应物引入。还提供了将可流动膜转化为固体电介质膜的方法。本发明的方法可用于对高纵横比间隙进行线或填充，包括具有3:1至10:1的纵横比的间隙。

2. 发明申请

US20090064929A1 CLUSTER TOOL ARCHITECTURE FOR PROCESSING A SUBSTRATE 有权
公开(公告)号：US20090064929A1
公开(公告)日：2009-03-12
申请号：US12254784
申请日：2008-10-20
申请人： Tetsuya Ishikawa , Rick J. Roberts , Helen R. Armer , Leon Volfovski , Jay D. Pinson , Michael Rice , David H. Quach , Mohsen S. Salek , Robert Lowrance , John A. Backer , William Tyler Weaver , Charles Carlson , Chongyang Wang , Jeffrey Hudgens , Harald Herchen , Brian Lu
发明人： Tetsuya Ishikawa , Rick J. Roberts , Helen R. Armer , Leon Volfovski , Jay D. Pinson , Michael Rice , David H. Quach , Mohsen S. Salek , Robert Lowrance , John A. Backer , William Tyler Weaver , Charles Carlson , Chongyang Wang , Jeffrey Hudgens , Harald Herchen , Brian Lu
IPC分类号： B05C13/02
CPC分类号： H01L21/67225 , G03B27/32 , G03D13/006 , G03F7/40 , G05B19/41825 , G05B2219/40476 , G05B2219/45031 , G05B2219/49137 , H01L21/67109 , H01L21/6715 , H01L21/67161 , H01L21/67173 , H01L21/67178 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67742 , H01L21/67745 , H01L21/67748 , H01L21/67754 , H01L21/6831 , H01L21/6838 , H01L21/68707 , H01L22/26 , Y02P90/087 , Y10S414/135 , Y10S414/136 , Y10T29/53187 , Y10T29/5323
摘要： Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. In one embodiment, the cluster tool is adapted to perform a track lithography process in which a substrate is coated with a photosensitive material, is then transferred to a stepper/scanner, which exposes the photosensitive material to some form of radiation to form a pattern in the photosensitive material, which is then removed in a developing process completed in the cluster tool. In track lithography type cluster tools, since the chamber processing times tend to be rather short, and the number of processing steps required to complete a typical track system process is large, a significant portion of the time it takes to process a substrate is taken up by the processes of transferring the substrates in a cluster tool between the various processing chambers. In one embodiment of the cluster tool, the cost of ownership is reduced by grouping substrates together and transferring and processing the substrates in groups of two or more to improve system throughput, and reduces the number of moves a robot has to make to transfer a batch of substrates between the processing chambers, thus reducing wear on the robot and increasing system reliability. In one aspect of the invention, the substrate processing sequence and cluster tool are designed so that the substrate transferring steps performed during the processing sequence are only made to chambers that will perform the next processing step in the processing sequence. Embodiments also provide for a method and apparatus that are used to improve the coater chamber, the developer chamber, the post exposure bake chamber, the chill chamber, and the bake chamber process results. Embodiments also provide for a method and apparatus that are used to increase the reliability of the substrate transfer process to reduce system down time.

3. 发明授权

US08181596B2 Cluster tool architecture for processing a substrate 有权
标题翻译：用于处理基板的集群工具架构
公开(公告)号：US08181596B2
公开(公告)日：2012-05-22
申请号：US12254750
申请日：2008-10-20
申请人： Tetsuya Ishikawa , Rick J. Roberts , Helen R. Armer , Leon Volfovski , Jay D. Pinson , Michael Rice , David H. Quach , Mohsen S. Salek , Robert Lowrance , John A. Backer , William Tyler Weaver , Charles Carlson , Chongyang Wang , Jeffrey Hudgens , Harald Herchen , Brian Lu
发明人： Tetsuya Ishikawa , Rick J. Roberts , Helen R. Armer , Leon Volfovski , Jay D. Pinson , Michael Rice , David H. Quach , Mohsen S. Salek , Robert Lowrance , John A. Backer , William Tyler Weaver , Charles Carlson , Chongyang Wang , Jeffrey Hudgens , Harald Herchen , Brian Lu
IPC分类号： B05C13/02 , C23C14/00 , H01L21/677
CPC分类号： H01L21/67225 , G03B27/32 , G03D13/006 , G03F7/40 , G05B19/41825 , G05B2219/40476 , G05B2219/45031 , G05B2219/49137 , H01L21/67109 , H01L21/6715 , H01L21/67161 , H01L21/67173 , H01L21/67178 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67742 , H01L21/67745 , H01L21/67748 , H01L21/67754 , H01L21/6831 , H01L21/6838 , H01L21/68707 , H01L22/26 , Y02P90/087 , Y10S414/135 , Y10S414/136 , Y10T29/53187 , Y10T29/5323
摘要： An apparatus for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, a smaller system footprint, and a more repeatable wafer history. Embodiments provide for a cluster tool comprising first and second processing racks, each having two or more vertically stacked substrate processing chambers, a first robot assembly able to access the first processing rack from a first side, a second robot assembly able to access the first processing rack from a second side and the second processing rack from a first side, a third robot assembly able to access the second processing rack from a second side, and a fourth robot assembly able to access the first and second processing racks and to load substrates in a cassette.
摘要翻译：一种使用具有增加的系统吞吐量，增加的系统可靠性，更小的系统占用面积和更可重复的晶片历史的多室处理系统（例如，集群工具）处理衬底的设备。实施例提供了一种集群工具，其包括第一和第二处理机架，每个具有两个或更多个垂直堆叠的衬底处理室，能够从第一侧接近第一处理架的第一机器人组件，能够访问第一处理的第二机器人组件从第二侧起第二机架和从第二侧起第二处理齿条的第三机器人组件，以及能够从第二侧进入第二处理齿条的第三机器人组件，以及能够接近第一和第二处理机架并将基板装入的第四机器人组件一个盒子。

4. 发明授权

US08146530B2 Cluster tool architecture for processing a substrate 有权
标题翻译：用于处理基板的集群工具架构
公开(公告)号：US08146530B2
公开(公告)日：2012-04-03
申请号：US12254778
申请日：2008-10-20
申请人： Tetsuya Ishikawa , Rick J. Roberts , Helen R. Armer , Leon Volfovski , Jay D. Pinson , Michael Rice , David H. Quach , Mohsen S. Salek , Robert Lowrance , John A. Backer , William Tyler Weaver , Charles Carlson , Chongyang Wang , Jeffrey Hudgens , Harald Herchen , Brian Lu
发明人： Tetsuya Ishikawa , Rick J. Roberts , Helen R. Armer , Leon Volfovski , Jay D. Pinson , Michael Rice , David H. Quach , Mohsen S. Salek , Robert Lowrance , John A. Backer , William Tyler Weaver , Charles Carlson , Chongyang Wang , Jeffrey Hudgens , Harald Herchen , Brian Lu
IPC分类号： B05C13/02 , C23C14/00 , H01L21/67
CPC分类号： H01L21/67225 , G03B27/32 , G03D13/006 , G03F7/40 , G05B19/41825 , G05B2219/40476 , G05B2219/45031 , G05B2219/49137 , H01L21/67109 , H01L21/6715 , H01L21/67161 , H01L21/67173 , H01L21/67178 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67742 , H01L21/67745 , H01L21/67748 , H01L21/67754 , H01L21/6831 , H01L21/6838 , H01L21/68707 , H01L22/26 , Y02P90/087 , Y10S414/135 , Y10S414/136 , Y10T29/53187 , Y10T29/5323
摘要： Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. Embodiments also provide for a method and apparatus that are used to improve the coater chamber, the developer chamber, the post exposure bake chamber, the chill chamber, and the bake chamber process results. Embodiments also provide for a method and apparatus that are used to increase the reliability of the substrate transfer process to reduce system down time.
摘要翻译：实施例通常提供使用具有增加的系统吞吐量，增加的系统可靠性的多腔室处理系统（例如，集群工具）来处理衬底的装置和方法，在集群工具中处理的衬底具有更可重复的晶片历史，并且还集群工具具有更小的系统占用空间。实施例还提供了用于改进涂布室，显影室，曝光后烘烤室，冷却室和烘焙室处理结果的方法和装置。实施例还提供了用于增加衬底转移过程以减少系统停机时间的可靠性的方法和装置。

5. 发明授权

US07381662B1 Methods for improving the cracking resistance of low-k dielectric materials 有权
标题翻译：提高低k电介质材料抗裂性的方法
公开(公告)号：US07381662B1
公开(公告)日：2008-06-03
申请号：US11376510
申请日：2006-03-14
申请人： Dong Niu , Haiying Fu , Brian Lu , Feng Wang
发明人： Dong Niu , Haiying Fu , Brian Lu , Feng Wang
IPC分类号： H01L21/26 , H01L21/76
CPC分类号： H01L21/31695 , C23C16/401 , C23C16/56 , H01L21/02126 , H01L21/02216 , H01L21/02274 , H01L21/0234 , H01L21/02348 , H01L21/02351 , H01L21/3105 , H01L21/31633
摘要： Methods for improving the mechanical properties of a CDO film are provided. The methods involve, for instance, providing either a dense CDO film or a porous CDO film in which the porogen has been removed followed by curing the CDO film at an elevated temperature using either a UV light treatment, an e-beam treatment, or a plasma treatment such that the curing improves the mechanical toughness of the CDO dielectric film.
摘要翻译：提供了改善CDO膜的机械性能的方法。所述方法包括例如提供密实的CDO膜或多孔CDO膜，其中致孔剂已被除去，然后使用紫外线光处理，电子束处理或电子束处理在高温下固化CDO膜等离子体处理使得固化改善了CDO介电膜的机械韧性。

6. 发明授权

US07678709B1 Method of forming low-temperature conformal dielectric films 有权
标题翻译：形成低温保形电介质膜的方法
公开(公告)号：US07678709B1
公开(公告)日：2010-03-16
申请号：US11881005
申请日：2007-07-24
申请人： Brian Lu , Wai-Fan Yau , Collin Mui , Bunsen Nie , Raihan Tarafdar
发明人： Brian Lu , Wai-Fan Yau , Collin Mui , Bunsen Nie , Raihan Tarafdar
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/02208 , C23C16/0272 , C23C16/401 , C23C16/45534 , H01L21/02205 , H01L21/0228 , H01L21/3121 , H01L21/76831 , H01L21/76837 , H01L21/76898
摘要： A deposition method modulates the reaction rate and thickness of highly conformal dielectric films deposited by forming a saturated catalytic layer on the surface and then exposing the surface to silicon-containing precursor gas and a reaction modulator, which may accelerate or quench the reaction. The modulator may be added before, after, or during exposure of the silicon-containing precursor gas. The film thickness after one cycle of deposition may be increased up to 20 times or decreased up to 20 times.
摘要翻译：沉积方法通过在表面上形成饱和催化剂层，然后将表面暴露于含硅前体气体和反应调节剂来调节沉积的高保形电介质膜的反应速率和厚度，这可能加速或淬灭反应。可以在含硅前体气体曝光之前，之后或暴露期间加入调节剂。沉积一个循环后的膜厚度可以增加到20倍或者降低到20倍。

7. 发明授权

US09257302B1 CVD flowable gap fill 有权
标题翻译： CVD可流动缝隙填充
公开(公告)号：US09257302B1
公开(公告)日：2016-02-09
申请号：US13461287
申请日：2012-05-01
申请人： Feng Wang , Brian Lu , Nerissa Draeger , Vishal Gauri , Raashina Humayun , Michal Danek , Bart van Schravendijk , Lakshminarayana Nittala
发明人： Feng Wang , Victor Y. Lu , Brian Lu , Wai-Fan Yau , Nerissa Draeger , Vishal Gauri , Raashina Humayun , Michal Danek , Bart van Schravendijk , Lakshminarayana Nittala
IPC分类号： H01L21/316
CPC分类号： H01L21/76224 , H01L21/02126 , H01L21/02164 , H01L21/02216 , H01L21/02323
摘要： Provided are methods of filling gaps on a substrate by creating flowable silicon oxide-containing films. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrate. In certain embodiments, the methods involve using a catalyst in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant.
摘要翻译：提供了通过产生可流动的含氧化硅膜在基板上填充间隙的方法。所述方法包括将气相含硅前体和氧化剂反应物引入含有基材的反应室中，使得在基材上形成冷凝的可流动的膜。可流动膜至少部分地填充衬底上的间隙。在某些实施方案中，该方法包括在形成膜中使用催化剂。催化剂可以并入到一种反应物中和/或作为单独的反应物引入。

8. 发明授权

US08805828B1 Providing information regarding prior searches 有权
标题翻译：提供有关先前搜索的信息
公开(公告)号：US08805828B1
公开(公告)日：2014-08-12
申请号：US13350104
申请日：2012-01-13
申请人： Brian Lu Ngo , Nicholas Gordon Fey , Junichi Uekawa , Noritaka Adachi
发明人： Brian Lu Ngo , Nicholas Gordon Fey , Junichi Uekawa , Noritaka Adachi
IPC分类号： G06F7/00 , G06F17/30
CPC分类号： G06F17/30528 , G06F17/30867
摘要： A system is configured to identify prior search history associated with a user, where the prior search history includes information regarding searches initiated by the user and information regarding search results provided based on the searches. The system is further configured to filter the prior search history to select one of the search results, generate an information item for the search result, and provide the information item to a client, associated with the user, for presentation on a display associated with the client.
摘要翻译：系统被配置为识别与用户相关联的先前搜索历史，其中先前搜索历史包括关于用户发起的搜索的信息以及关于基于搜索提供的搜索结果的信息。该系统还被配置为过滤先前的搜索历史以选择搜索结果之一，生成用于搜索结果的信息项，并且将信息项提供给与用户相关联的客户端，以在与该用户相关联的显示器上呈现客户。

9. 发明授权

US08215262B2 Cluster tool architecture for processing a substrate 有权
标题翻译：用于处理基板的集群工具架构
公开(公告)号：US08215262B2
公开(公告)日：2012-07-10
申请号：US12254784
申请日：2008-10-20
申请人： Tetsuya Ishikawa , Rick J. Roberts , Helen R. Armer , Leon Volfovski , Jay D. Pinson , Michael Rice , David H. Quach , Mohsen S. Salek , Robert Lowrance , John A. Backer , William Tyler Weaver , Charles Carlson , Chongyang Wang , Jeffrey Hudgens , Harald Herchen , Brian Lu
发明人： Tetsuya Ishikawa , Rick J. Roberts , Helen R. Armer , Leon Volfovski , Jay D. Pinson , Michael Rice , David H. Quach , Mohsen S. Salek , Robert Lowrance , John A. Backer , William Tyler Weaver , Charles Carlson , Chongyang Wang , Jeffrey Hudgens , Harald Herchen , Brian Lu
IPC分类号： B05C13/02 , C23C14/00 , H01L21/677
CPC分类号： H01L21/67225 , G03B27/32 , G03D13/006 , G03F7/40 , G05B19/41825 , G05B2219/40476 , G05B2219/45031 , G05B2219/49137 , H01L21/67109 , H01L21/6715 , H01L21/67161 , H01L21/67173 , H01L21/67178 , H01L21/67184 , H01L21/6719 , H01L21/67196 , H01L21/67742 , H01L21/67745 , H01L21/67748 , H01L21/67754 , H01L21/6831 , H01L21/6838 , H01L21/68707 , H01L22/26 , Y02P90/087 , Y10S414/135 , Y10S414/136 , Y10T29/53187 , Y10T29/5323
摘要： Embodiments generally provide an apparatus and method for processing substrates using a multi-chamber processing system (e.g., a cluster tool) that has an increased system throughput, increased system reliability, substrates processed in the cluster tool have a more repeatable wafer history, and also the cluster tool has a smaller system footprint. In one embodiment, a cluster tool for processing a substrate includes a first processing rack, a first robot assembly and a second robot assembly operable to transfer substrates to substrate processing chambers in the first processing rack, and a horizontal motion assembly. The horizontal motion assembly includes one or more walls that form an interior region in which a motor is enclosed. The one or more walls defining an elongated opening through which a robot support interface travels, the robot support interface supporting a robot of the horizontal motion assembly.
摘要翻译：实施例通常提供使用具有增加的系统吞吐量，增加的系统可靠性的多腔室处理系统（例如，集群工具）来处理衬底的装置和方法，在集群工具中处理的衬底具有更可重复的晶片历史，并且还集群工具具有更小的系统占用空间。在一个实施例中，用于处理衬底的簇工具包括第一处理架，第一机器人组件和可操作以将衬底传送到第一处理架中的衬底处理室的第二机器人组件和水平运动组件。水平运动组件包括形成电动机被封闭的内部区域的一个或多个壁。所述一个或多个壁限定机器人支撑接口行进的细长开口，所述机器人支撑界面支撑水平运动组件的机器人。

10. 发明授权

US08187951B1 CVD flowable gap fill 有权
标题翻译： CVD可流动缝隙填充
公开(公告)号：US08187951B1
公开(公告)日：2012-05-29
申请号：US12625468
申请日：2009-11-24
申请人： Feng Wang , Victor Y. Lu , Brian Lu , Wai-Fan Yau , Nerissa Draeger
发明人： Feng Wang , Victor Y. Lu , Brian Lu , Wai-Fan Yau , Nerissa Draeger
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： Methods of lining and/or filling gaps on a substrate by creating flowable silicon oxide-containing films are provided. The methods involve introducing vapor-phase silicon-containing precursor and oxidant reactants into a reaction chamber containing the substrate under conditions such that a condensed flowable film is formed on the substrate. The flowable film at least partially fills gaps on the substrates and is then converted into a silicon oxide film. In certain embodiments, the methods involve using a catalyst, e.g., a nucleophile or onium catalyst, in the formation of the film. The catalyst may be incorporated into one of the reactants and/or introduced as a separate reactant. Also provided are methods of converting the flowable film to a solid dielectric film. The methods of this invention may be used to line or fill high aspect ratio gaps, including gaps having aspect ratios ranging from 3:1 to 10:1.
摘要翻译：提供了通过产生可流动的含氧化硅膜在衬底上衬里和/或填充间隙的方法。所述方法包括将气相含硅前体和氧化剂反应物引入含有基材的反应室中，使得在基材上形成冷凝的可流动的膜。可流动膜至少部分地填充衬底上的间隙，然后转换成氧化硅膜。在某些实施方案中，所述方法包括在形成膜中使用催化剂，例如亲核试剂或鎓催化剂。催化剂可以并入到一种反应物中和/或作为单独的反应物引入。还提供了将可流动膜转化为固体电介质膜的方法。本发明的方法可以用于线或填充高纵横比间隙，包括具有3:1至10:1的纵横比的间隙。

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