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    • 2. 发明授权
    • Silicon-germanium bulk alloy growth by liquid encapsulated zone melting
    • 硅锗体合金生长通过液体封装区熔化
    • US6143070A
    • 2000-11-07
    • US93846
    • 1998-05-15
    • David F. BlissBrian G. DemczykJohn Bailey
    • David F. BlissBrian G. DemczykJohn Bailey
    • C30B11/00C30B13/00C30B13/14C30B13/10
    • C30B13/14C30B11/002C30B13/00C30B29/52
    • The present invention describes the growth of single crystals of non-congruently melting alloys, in particular, silicon-germanium of constant composition in a quartz ampoule by the use of CaCl.sub.2 as an encapsulant for the liquid encapsulated zone melting (LEZM) technique. The zone melting process was modified with the addition of calcium chloride which acts as a liquid encapsulant at temperatures above 660.degree. C. so that the crystal can grow without sticking to the container. The calcium chloride encapsulant creates a non-wetting buffer layer between the quartz container and the SiGe charge material allowing single crystal growth of mixed alloys. The crystal growth system consists of a vertical tube RF furnace with a water cooled split-ring concentrator. The concentrator is 5 mm. Thick by 25 mm diameter and provides a high temperature melt zone with a "spike" profile. The single crystal seed and the polycrystalline alloy charge are loaded into a quartz ampoule which fits freely through the concentrator coil. The encapsulant calcium chloride is placed on top of the charge so that when it melts, it covers the inner surface of the quartz ampoule. During operation the alloy charge is melted in the "spike" zone at the seed interface, and then the molten zone is translated along the length so that a single crystal of uniform composition is formed.
    • 本发明描述了通过使用CaCl 2作为液体封装区域熔化(LEZM)技术的密封剂,在一个石英安瓿中的非一致熔融合金,特别是恒定组成的硅 - 锗的单晶的生长。 通过在高于660℃的温度下添加氯化钙作为液体密封剂来改变区域熔融过程,使得晶体可以在不粘附到容器的情况下生长。 氯化钙封装剂在石英容器和SiGe电荷材料之间产生一个不润湿的缓冲层,允许混合合金的单晶生长。 晶体生长系统由具有水冷分离环集中器的垂直管RF炉组成。 集中器为5 mm。 厚度为25毫米直径,并提供具有“尖峰”轮廓的高温熔融区。 将单晶种子和多晶合金电荷装载到通过集中器线圈自由配合的石英安瓿中。 密封剂氯化钙放置在电荷的顶部,使其在熔化时覆盖石英安瓿的内表面。 在操作过程中,合金电荷在种子界面的“尖峰”区域中熔化,然后熔融区沿着长度平移,从而形成均匀组成的单晶。