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1. 发明申请

US20130012008A1 METHOD OF PRODUCING SOI WAFER 审中-公开
标题翻译：生产SOI WAFER的方法
公开(公告)号：US20130012008A1
公开(公告)日：2013-01-10
申请号：US13637166
申请日：2011-03-23
申请人： Bong-Gyun Ko , Tetsuya Nakai
发明人： Bong-Gyun Ko , Tetsuya Nakai
IPC分类号： H01L21/265
CPC分类号： H01L21/26533 , H01L21/3226 , H01L21/324 , H01L21/76243
摘要： The present invention provides a method of producing a high quality SOI wafer having a thin BOX layer with high productivity. In the method of producing an SOI wafer by performing heat treatment on a silicon wafer after implanting oxygen ions into silicon wafer, first ion implantation is performed on the silicon wafer to a high dose of 2×1017 ions/cm2 to 3×1017 ions/cm2, and then second ion implantation is performed to a low dose of 5×1014 ions/cm2 to 1×1016 ions/cm2. Subsequently, heat treatment is performed in a high oxygen concentration atmosphere at an oxygen partial pressure ratio of 10% to 80%, and then heat treatment is performed in a low oxygen atmosphere at an oxygen partial pressure ratio of less than 10%. After that, heat treatment is performed in a chlorine-containing gas atmosphere by adjusting the oxygen atmosphere to the chlorine-containing gas atmosphere by flowing argon through a chlorine-containing solution.
摘要翻译：本发明提供一种制造具有高生产率的薄BOX层的高品质SOI晶片的方法。在将氧离子注入硅晶片之后对硅晶片进行热处理的SOI晶片的制造方法中，在硅晶片上进行高剂量2×1017离子/ cm 2〜3×1017离子/ cm2，然后以5×10 14离子/ cm 2至1×10 16离子/ cm 2的低剂量进行第二次离子注入。随后，在氧分压比为10％至80％的高氧浓度气氛中进行热处理，然后在氧分压低于10％的低氧气氛中进行热处理。之后，通过使氩气流过含氯溶液将含氧气体气氛调节至含氯气体气氛中进行热处理。

2. 发明授权

US08153450B2 Method for manufacturing SIMOX wafer 失效
标题翻译：制造SIMOX晶圆的方法
公开(公告)号：US08153450B2
公开(公告)日：2012-04-10
申请号：US12695301
申请日：2010-01-28
申请人： Bong-Gyun Ko
发明人： Bong-Gyun Ko
IPC分类号： H01L21/00
CPC分类号： H01L21/26533 , H01L21/76243
摘要： At oxygen ion implanting steps in manufacture of a SIMOX wafer, a path is formed inside or on a back surface of wafer holding means, and oxygen ions are implanted while heating an outer peripheral portion of the wafer that is in contact with the wafer holding means by flowing a heated fluid through this path. An in-plane temperature of a wafer held at the time of ion implantation is prevented from becoming uneven, and in-plane film thicknesses of both an SOI layer and a BOX layer are uniformed.
摘要翻译：在SIMOX晶片的制造中的氧离子注入步骤中，在晶片保持装置的背面内部或之上形成路径，并且在加热与晶片保持装置接触的晶片的外周部分的同时注入氧离子通过使加热的流体流过该路径。防止离子注入时保持的晶片的面内温度变得不均匀，SOI层和BOX层的面内膜厚均匀化。

3. 发明申请

US20100197047A1 METHOD FOR MANUFACTURING SIMOX WAFER 失效
标题翻译：制造SIMOX WAFER的方法
公开(公告)号：US20100197047A1
公开(公告)日：2010-08-05
申请号：US12695301
申请日：2010-01-28
申请人： Bong-Gyun KO
发明人： Bong-Gyun KO
IPC分类号： H01L21/66
CPC分类号： H01L21/26533 , H01L21/76243
摘要： At oxygen ion implanting steps in manufacture of a SIMOX wafer, a path is formed inside or on a back surface of wafer holding means, and oxygen ions are implanted while heating an outer peripheral portion of the wafer that is in contact with the wafer holding means by flowing a heated fluid through this path. An in-plane temperature of a wafer held at the time of ion implantation is prevented from becoming uneven, and in-plane film thicknesses of both an SOI layer and a BOX layer are uniformed.
摘要翻译：在SIMOX晶片的制造中的氧离子注入步骤中，在晶片保持装置的背面内部或之上形成路径，并且在加热与晶片保持装置接触的晶片的外周部分的同时注入氧离子通过使加热的流体流过该路径。防止离子注入时保持的晶片的面内温度变得不均匀，SOI层和BOX层的面内膜厚均匀化。

4. 发明授权

US07727867B2 Method for manufacturing SIMOX wafer 失效
标题翻译：制造SIMOX晶圆的方法
公开(公告)号：US07727867B2
公开(公告)日：2010-06-01
申请号：US11677282
申请日：2007-02-21
申请人： Yoshiro Aoki , Bong-Gyun Ko
发明人： Yoshiro Aoki , Bong-Gyun Ko
IPC分类号： H01L21/425
CPC分类号： H01L21/76243
摘要： A MLD-SIMOX wafer is obtained by forming a first ion-implanted layer in a silicon wafer; forming a second ion-implanted layer that is in an amorphous state; and subjecting the wafer to a high-temperature heat treatment to maintain the wafer in an atmosphere containing oxygen at a temperature that is not lower than 1300° C. but lower than a silicon melting point to change the first and the second ion-implanted layers into a BOX layer, wherein the dose amount for the first ion-implanted layer is 1.25 to 1.5×1017 atoms/cm2, the dose amount for the second ion-implanted layer is 1.0×1014 to 1×1016 atoms/cm2, the wafer is preheated to a temperature of 50° C. to 200° C. before forming the second ion-implanted layer, and the second ion-implanted layer is formed in a state where it is continuously heated to a preheating temperature.
摘要翻译：通过在硅晶片中形成第一离子注入层来获得MLD-SIMOX晶片; 形成处于非晶状态的第二离子注入层; 并对该晶片进行高温热处理，将晶片保持在不低于1300℃但低于硅熔点的温度的氧气氛中，以改变第一和第二离子注入层其中第一离子注入层的剂量为1.25〜1.5×10 17原子/ cm 2，第二离子注入层的剂量为1.0×10 14〜1×10 16原子/ cm 2，晶片在形成第二离子注入层之前预热到50℃至200℃的温度，并且第二离子注入层在其被连续加热到预热温度的状态下形成。

5. 发明申请

US20090203187A1 Method of Manufacturing SOI Substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20090203187A1
公开(公告)日：2009-08-13
申请号：US12423585
申请日：2009-04-14
申请人： Tetsuya NAKAI , Bong-Gyun KO , Takeshi HAMAMOTO , Takashi YAMADA
发明人： Tetsuya NAKAI , Bong-Gyun KO , Takeshi HAMAMOTO , Takashi YAMADA
IPC分类号： H01L21/762
CPC分类号： H01L21/76243
摘要： To easily and accurately flush a substrate surface serving an SOI area with a substrate surface serving as a bulk area, make a buried oxide film, and prevent an oxide film from being exposed on substrate surface.After partially forming a mask oxide film 23 on the surface of a substrate 12 constituted of single crystal silicon, oxygen ions 16 are implanted into the surface of the substrate through the mask oxide film, and the substrate is annealed to form an buried oxide film 13 inside the substrate. Further included is a step of forming a predetermined-depth concave portion 12c deeper than substrate surface 12b serving as a bulk area on which the mask oxide film is formed on the substrate surface 12a serving as an SOI area by forming a thermally grown oxide film 21 on the substrate surface 12a serving as an SOI area on which the mask oxide film is not formed between the step of forming the mask oxide film and the step of implanting oxygen ions.
摘要翻译：为了容易且准确地将用作SOI区域的基板表面与用作主体区域的基板表面冲洗，形成掩埋氧化膜，并且防止氧化膜暴露在基板表面上。在由单晶硅构成的基板12的表面上部分地形成掩模氧化膜23之后，通过掩模氧化膜将氧离子16注入基板的表面，并将基板退火以形成掩埋氧化膜13 在基板内。进一步包括通过形成热生长氧化物膜21，形成比作为其上形成有掩模氧化膜的体积面的衬底表面12b更深的预定深度凹部12c的步骤，该衬底表面12b形成在用作SOI区域的衬底表面12a上在形成掩模氧化膜的步骤和注入氧离子的步骤之间作为其上未形成掩模氧化物膜的SOI区域的衬底表面12a上。

6. 发明申请

US20080242048A1 METHOD FOR MANUFACTURING SOI SUBSTRATE 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US20080242048A1
公开(公告)日：2008-10-02
申请号：US11559347
申请日：2006-11-13
申请人： Tetsuya Nakai , Bong Gyun Ko , Takeshi Hamamoto , Takashi Yamada
发明人： Tetsuya Nakai , Bong Gyun Ko , Takeshi Hamamoto , Takashi Yamada
IPC分类号： H01L21/762
CPC分类号： H01L21/76243
摘要： To easily and accurately flush a substrate surface serving an SOI area with a substrate surface serving as a bulk area, make a buried oxide film, and prevent an oxide film from being exposed on substrate surface.After partially forming a mask oxide film 23 on the surface of a substrate 12 constituted of single crystal silicon, oxygen ions 16 are implanted into the surface of the substrate through the mask oxide film, and the substrate is annealed to form an buried oxide film 13 inside the substrate. Further included is a step of forming a predetermined-depth concave portion 12c deeper than substrate surface 12b serving as a bulk area on which the mask oxide film is formed on the substrate surface 12a serving as an SOI area by forming a thermally grown oxide film 21 on the substrate surface 12a serving as an SOI area on which the mask oxide film is not formed between the step of forming the mask oxide film and the step of implanting oxygen ions.
摘要翻译：为了容易且准确地将用作SOI区域的基板表面与用作主体区域的基板表面冲洗，形成掩埋氧化膜，并且防止氧化膜暴露在基板表面上。在由单晶硅构成的基板12的表面上部分地形成掩模氧化膜23之后，通过掩模氧化膜将氧离子16注入基板的表面，并将基板退火以形成掩埋氧化膜13 在基板内。还包括形成预定深度的凹部12c的步骤，该预定深度凹部12c比作为其上形成有掩模氧化膜的基板表面12b更深地形成在作为SOI区域的基板表面12a上的掩模氧化膜，在形成掩模氧化膜的步骤和注入氧离子的步骤之间作为其上没有形成掩模氧化物膜的SOI区域的衬底表面12a上的氧化物膜21。

7. 发明授权

US07811878B2 Method of manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US07811878B2
公开(公告)日：2010-10-12
申请号：US12423585
申请日：2009-04-14
申请人： Tetsuya Nakai , Bong-Gyun Ko , Takeshi Hamamoto , Takashi Yamada
发明人： Tetsuya Nakai , Bong-Gyun Ko , Takeshi Hamamoto , Takashi Yamada
IPC分类号： H01L21/8238
CPC分类号： H01L21/76243
摘要： To easily and accurately flush a substrate surface serving an SOI area with a substrate surface serving as a bulk area, make a buried oxide film, and prevent an oxide film from being exposed on substrate surface. After partially forming a mask oxide film 23 on the surface of a substrate 12 constituted of single crystal silicon, oxygen ions 16 are implanted into the surface of the substrate through the mask oxide film, and the substrate is annealed to form an buried oxide film 13 inside the substrate. Further included is a step of forming a predetermined-depth concave portion 12c deeper than substrate surface 12b serving as a bulk area on which the mask oxide film is formed on the substrate surface 12a serving as an SOI area by forming a thermally grown oxide film 21 on the substrate surface 12a serving as an SOI area on which the mask oxide film is not formed between the step of forming the mask oxide film and the step of implanting oxygen ions.
摘要翻译：为了容易且准确地将用作SOI区域的基板表面与用作主体区域的基板表面冲洗，形成掩埋氧化膜，并且防止氧化膜暴露在基板表面上。在由单晶硅构成的基板12的表面上部分地形成掩模氧化膜23之后，通过掩模氧化膜将氧离子16注入基板的表面，并将基板退火以形成掩埋氧化膜13 在基板内。进一步包括通过形成热生长氧化物膜21，形成比作为其上形成有掩模氧化膜的体积面的衬底表面12b更深的预定深度凹部12c的步骤，该衬底表面12b形成在用作SOI区域的衬底表面12a上在形成掩模氧化膜的步骤和注入氧离子的步骤之间作为其上未形成掩模氧化物膜的SOI区域的衬底表面12a上。

8. 发明授权

US07537989B2 Method for manufacturing SOI substrate 有权
标题翻译：制造SOI衬底的方法
公开(公告)号：US07537989B2
公开(公告)日：2009-05-26
申请号：US11559347
申请日：2006-11-13
申请人： Tetsuya Nakai , Bong-Gyun Ko , Takeshi Hamamoto , Takashi Yamada
发明人： Tetsuya Nakai , Bong-Gyun Ko , Takeshi Hamamoto , Takashi Yamada
IPC分类号： H01L21/8238
CPC分类号： H01L21/76243
摘要： To easily and accurately flush a substrate surface serving an SOI area with a substrate surface serving as a bulk area, make a buried oxide film, and prevent an oxide film from being exposed on substrate surface. After partially forming a mask oxide film 23 on the surface of a substrate 12 constituted of single crystal silicon, oxygen ions 16 are implanted into the surface of the substrate through the mask oxide film, and the substrate is annealed to form a buried oxide film 13 inside the substrate. Further included is a step of forming a predetermined-depth concave portion 12c deeper than substrate surface 12b serving as a bulk area on which the mask oxide film is formed on the substrate surface 12a serving as an SOI area by forming a thermally grown oxide film 21 on the substrate surface 12a serving as an SOI area on which the mask oxide film is not formed between the step of forming the mask oxide film and the step of implanting oxygen ions.
摘要翻译：为了容易且准确地将用作SOI区域的基板表面与用作主体区域的基板表面冲洗，形成掩埋氧化膜，并且防止氧化膜暴露在基板表面上。在由单晶硅构成的基板12的表面上部分地形成掩模氧化膜23之后，通过掩模氧化膜将氧离子16注入到基板的表面，并将基板退火以形成掩埋氧化膜13 在基板内。进一步包括通过形成热生长氧化物膜21，形成比作为其上形成有掩模氧化膜的体积面的衬底表面12b更深的预定深度凹部12c的步骤，该衬底表面12b形成在用作SOI区域的衬底表面12a上在形成掩模氧化膜的步骤和注入氧离子的步骤之间作为其上未形成掩模氧化物膜的SOI区域的衬底表面12a上。

9. 发明申请

US20070196995A1 METHOD FOR MANUFACTURING SIMOX WAFER 失效
标题翻译：制造SIMOX WAFER的方法
公开(公告)号：US20070196995A1
公开(公告)日：2007-08-23
申请号：US11677282
申请日：2007-02-21
申请人： Yoshiro Aoki , Bong-Gyun Ko
发明人： Yoshiro Aoki , Bong-Gyun Ko
IPC分类号： H01L21/76
CPC分类号： H01L21/76243
摘要： There is obtained an MLD-SIMOX wafer having a BOX layer with a thin film thickness that allows a reduction in SOI layer surface roughness and interface roughness of the BOX layer and the SOI layer and an improvement in breakdown voltage. In a method for manufacturing a SIMOX wafer comprising a step of forming a first ion-implanted layer in a silicon wafer; a step of forming a second ion-implanted layer that is in an amorphous state; and a high-temperature heat treatment state of maintaining the wafer in an atmosphere containing oxygen at a temperature that is not lower than 1300° C. but lower than a silicon melting point to change the first and the second ion-implanted layers into a BOX layer, the method is characterized in that a dose amount for the first ion-implanted layer is 1.25 to 1.5×1017 atoms/cm2, a dose amount for the second ion-implanted layer is 1.0×1014 to 1×1016 atoms/cm2, a step of preheating the wafer to a temperature that is not lower than 50° C. but lower than 200° C. is further included before the step of forming the second ion-implanted layer, and the second ion-implanted layer is formed in a state where it is continuously heated to a preheating temperature.
摘要翻译：获得具有薄膜厚度的BOX层的MLD-SIMOX晶片，其允许降低BO层和SOI层的SOI层表面粗糙度和界面粗糙度，并且提高击穿电压。一种用于制造SIMOX晶片的方法，包括在硅晶片中形成第一离子注入层的步骤; 形成处于非晶态的第二离子注入层的步骤; 以及在不低于1300℃但低于硅熔点的温度下将晶片保持在含氧气氛的高温热处理状态，以将第一和第二离子注入层改变为BOX 该方法的特征在于，第一离子注入层的剂量为1.25至1.5×10 17原子/ cm 2，第二离子的剂量 - 植入层为1.0×10 14〜1×10 16原子/ cm 2，将晶片预热至不低于在形成第二离子注入层的步骤之前还包括50℃但低于200℃，并且第二离子注入层在其被连续加热到预热温度的状态下形成。

10. 发明授权

US07910463B2 Method of producing SIMOX wafer 失效
标题翻译：生产SIMOX晶圆的方法
公开(公告)号：US07910463B2
公开(公告)日：2011-03-22
申请号：US11784999
申请日：2007-04-09
申请人： Yoshio Murakami , Bong-Gyun Ko
发明人： Yoshio Murakami , Bong-Gyun Ko
IPC分类号： H01L21/00
CPC分类号： H01L21/26533 , H01L21/26593 , H01L21/76243
摘要： A SIMOX wafer is produced by implanting an oxygen ion, in which a hydrogen ion is implanted at a dose of 1015-1017/cm2 before or after the step of the oxygen ion implantation.
摘要翻译：通过注入氧离子来制造SIMOX晶片，其中在氧离子注入步骤之前或之后以1015-1017 / cm2的剂量注入氢离子。

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