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1. 发明授权

US08444926B2 Processing chamber with heated chamber liner 有权
标题翻译：具有加热室衬板的加工室
公开(公告)号：US08444926B2
公开(公告)日：2013-05-21
申请号：US11668947
申请日：2007-01-30
申请人： Mark A. Fodor , Sophia M. Velastegui , Bok Hoen Kim , Dale R. DuBois
发明人： Mark A. Fodor , Sophia M. Velastegui , Bok Hoen Kim , Dale R. DuBois
IPC分类号： A62D3/00 , B01J19/00 , C23F1/00 , H01L21/306 , B05C11/00 , C23C16/00 , H05B3/00 , H05B11/00
CPC分类号： C23C16/46
摘要： A heater liner assembly suitable for covering the interior of a plasma processing chamber is provided. In some embodiments, a liner assembly for a processing chamber can include a heating element embedded in a body. A flange extending outward from an outer diameter of the body includes an upper surface having a sealing surface and at least one pad that extends from the upper surface of the flange to an elevation beyond the sealing surface. The pad contributes to control of the temperature of the liner assembly by maintaining the liner assembly spaced apart from the processing chamber.
摘要翻译：提供一种适用于覆盖等离子体处理室内部的加热器衬套组件。在一些实施例中，用于处理室的衬套组件可以包括嵌入在主体中的加热元件。从主体的外径向外延伸的凸缘包括具有密封表面的上表面和从凸缘的上表面延伸到超过密封表面的高度的至少一个垫。衬垫有助于通过保持衬套组件与处理室间隔开来控制衬套组件的温度。

2. 发明授权

US08298887B2 High mobility monolithic p-i-n diodes 失效
标题翻译：高迁移率单片p-i-n二极管
公开(公告)号：US08298887B2
公开(公告)日：2012-10-30
申请号：US12824032
申请日：2010-06-25
申请人： Xinhai Han , Nagarajan Rajagopalan , Ji Ae Park , Bencherki Mebarki , Heung Lak Park , Bok Hoen Kim
发明人： Xinhai Han , Nagarajan Rajagopalan , Ji Ae Park , Bencherki Mebarki , Heung Lak Park , Bok Hoen Kim
IPC分类号： H01L21/8234
CPC分类号： H01L21/0262 , H01L21/02532 , H01L21/02573 , H01L21/02576 , H01L21/02579 , H01L21/02603 , H01L29/66136 , H01L29/868
摘要： Methods of forming high-current density vertical p-i-n diodes on a substrate are described. The methods include the steps of concurrently combining a group-IV-element-containing precursor with a sequential exposure to an n-type dopant precursor and a p-type dopant precursor in either order. An intrinsic layer is deposited between the n-type and p-type layers by reducing or eliminating the flow of the dopant precursors while flowing the group-IV-element-containing precursor. The substrate may reside in the same processing chamber during the deposition of each of the n-type layer, intrinsic layer and p-type layer and the substrate is not exposed to atmosphere between the depositions of adjacent layers.
摘要翻译：描述了在衬底上形成高电流密度垂直p-i-n二极管的方法。这些方法包括以下步骤：以含有IV族元素的前体和依次暴露于n型掺杂剂前体和p型掺杂剂前体的任一顺序同时组合。通过在流过含IV族元素的前体的同时减少或消除掺杂剂前体的流动，在n型和p型层之间沉积本征层。在沉积n型层，本征层和p型层期间，衬底可以驻留在相同的处理室中，并且衬底在相邻层的沉积之间不暴露于大气中。

3. 发明申请

US20120164829A1 FABRICATION OF THROUGH-SILICON VIAS ON SILICON WAFERS 有权
标题翻译：在硅陶瓷上制造通孔硅
公开(公告)号：US20120164829A1
公开(公告)日：2012-06-28
申请号：US12977060
申请日：2010-12-22
申请人： Nagarajan Rajagopalan , Ji Ae Park , Ryan Yamase , Shamik Patel , Thomas Nowak , Li-Qun Xia , Bok Hoen Kim , Ran Ding , Jim Baldino , Mehul Naik , Sesh Ramaswami
发明人： Nagarajan Rajagopalan , Ji Ae Park , Ryan Yamase , Shamik Patel , Thomas Nowak , Li-Qun Xia , Bok Hoen Kim , Ran Ding , Jim Baldino , Mehul Naik , Sesh Ramaswami
IPC分类号： H01L21/28
CPC分类号： H01L24/13 , H01L21/02074 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/3065 , H01L21/31116 , H01L21/67103 , H01L21/67109 , H01L21/6719 , H01L21/6835 , H01L21/68792 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76898 , H01L24/11 , H01L24/742 , H01L2221/68372 , H01L2221/68381 , H01L2224/11002 , H01L2224/11452 , H01L2224/1182 , H01L2224/13562 , H01L2224/1357 , H01L2224/13687 , H01L2224/742 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01068 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/09701 , H01L2924/14 , H01L2924/351 , H01L2924/05042 , H01L2924/00
摘要： A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.
摘要翻译：一种硅通孔制造方法包括蚀刻硅板中的多个通孔。在硅板的表面和通孔的侧壁和底壁上沉积氧化物衬垫。然后将金属导体沉积在通孔中。在可与氧化物衬垫同时使用的另一种方案中，氮化硅钝化层沉积在衬底的硅板的暴露后表面上。

4. 发明授权

US08105465B2 Method for depositing conformal amorphous carbon film by plasma-enhanced chemical vapor deposition (PECVD) 有权
标题翻译：通过等离子体增强化学气相沉积（PECVD）沉积适形非晶碳膜的方法
公开(公告)号：US08105465B2
公开(公告)日：2012-01-31
申请号：US12577455
申请日：2009-10-12
申请人： Kwangduk Douglas Lee , Takashi Morii , Yoichi Suzuki , Sudha Rathi , Martin Jay Seamons , Deenesh Padhi , Bok Hoen Kim , Cynthia Pagdanganan
发明人： Kwangduk Douglas Lee , Takashi Morii , Yoichi Suzuki , Sudha Rathi , Martin Jay Seamons , Deenesh Padhi , Bok Hoen Kim , Cynthia Pagdanganan
IPC分类号： C01B31/00
CPC分类号： H01L21/3146 , C23C16/26 , C23C16/45523 , C23C16/5096 , H01L21/3141
摘要： Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.
摘要翻译：提供了在基板上沉积无定形碳层的方法和装置。在一个实施例中，沉积工艺包括将衬底定位在衬底处理室中，将具有大于1:2的碳原子与氢原子比的烃源引入到处理室中，引入等离子体引发气体，所述等离子体引发气体选自氢气，氦气，氩气，氮气及其组合进入处理室，烃源具有等离子体起始气体体积流量比为1：2或更大的体积流量，在处理室中产生等离子体，并形成基底上的共形无定形碳层。

5. 发明申请

US20110223765A1 SILICON NITRIDE PASSIVATION LAYER FOR COVERING HIGH ASPECT RATIO FEATURES 有权
标题翻译：用于覆盖高比例特征的硅氮钝化层
公开(公告)号：US20110223765A1
公开(公告)日：2011-09-15
申请号：US12724396
申请日：2010-03-15
申请人： Nagarajan RAJAGOPALAN , Xinhai HAN , Ryan YAMASE , Ji Ae PARK , Shamik PATEL , Thomas NOWAK , Zhengjiang "David" CUI , Mehul NAIK , Heung Lak PARK , Ran DING , Bok Hoen KIM
发明人： Nagarajan RAJAGOPALAN , Xinhai HAN , Ryan YAMASE , Ji Ae PARK , Shamik PATEL , Thomas NOWAK , Zhengjiang "David" CUI , Mehul NAIK , Heung Lak PARK , Ran DING , Bok Hoen KIM
IPC分类号： H01L21/311 , H01L21/318
CPC分类号： H01L21/02068 , C23C16/345 , C23C16/45523 , H01L21/0217 , H01L21/02271 , H01L21/02274 , H01L21/0234 , H01L21/56 , H01L21/76832 , H01L21/76834 , H01L23/291 , H01L23/3171 , H01L24/11 , H01L24/13 , H01L24/742 , H01L2224/1181 , H01L2224/1182 , H01L2224/11827 , H01L2224/11831 , H01L2224/119 , H01L2224/11901 , H01L2224/13025 , H01L2224/131 , H01L2224/13147 , H01L2224/13562 , H01L2224/1358 , H01L2224/13583 , H01L2224/13687 , H01L2224/742 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01074 , H01L2924/01075 , H01L2924/014 , H01L2924/14 , H01L2924/351 , H01L2924/05042 , H01L2924/00014 , H01L2224/13099 , H01L2924/00
摘要： A method of forming a passivation layer comprising silicon nitride on features of a substrate is described. In a first stage of the deposition method, a dielectric deposition gas, comprising a silicon-containing gas and a nitrogen-containing gas, is introduced into the process zone and energized to deposit a silicon nitride layer. In a second stage, a treatment gas, having a different composition than that of the dielectric deposition gas, is introduced into the process zone and energized to treat the silicon nitride layer. The first and second stages can be performed a plurality of times.
摘要翻译：描述了在衬底的特征上形成包含氮化硅的钝化层的方法。在沉积方法的第一阶段中，将包含含硅气体和含氮气体的介电沉积气体引入工艺区域并通电以沉积氮化硅层。在第二阶段中，将具有不同于介电沉积气体的组成不同的处理气体引入处理区并通电以处理氮化硅层。第一和第二阶段可以执行多次。

6. 发明申请

US20110104400A1 METHOD FOR DEPOSITING AN AMORPHOUS CARBON FILM WITH IMPROVED DENSITY AND STEP COVERAGE 审中-公开
标题翻译：用改进的密度和步骤覆盖沉积非晶碳膜的方法
公开(公告)号：US20110104400A1
公开(公告)日：2011-05-05
申请号：US12987688
申请日：2011-01-10
申请人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
发明人： Deenesh Padhi , Hyoung-Chan Ha , Sudha Rathi , Derek R. Witty , Chiu Chan , Sohyun Park , Ganesh Balasubramanian , Karthik Janakiraman , Martin Jay Seamons , Visweswaren Sivaramakrishnan , Bok Hoen Kim , Hichem M'Saad
IPC分类号： C23C26/00 , H05H1/24
CPC分类号： H01L21/02115 , C23C16/045 , C23C16/26 , C23C16/5096 , C23C16/56 , H01L21/02274 , H01L21/31144 , H01L21/3146
摘要： A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.
摘要翻译：在基板上沉积无定形碳层的方法包括以下步骤：将基板定位在室中，将烃源引入处理室，将重稀有气体引入处理室，以及在处理室中产生等离子体。重稀土气体选自氩，氪，氙及其组合，惰性气体的摩尔流量大于烃源的摩尔流量。可以包括沉积终止步骤，其中停止烃源和惰性气体的流动，并且将等离子体保持在室中一段时间以从中除去颗粒。

7. 发明授权

US07572337B2 Blocker plate bypass to distribute gases in a chemical vapor deposition system 有权
标题翻译：阻挡板旁路以在化学气相沉积系统中分配气体
公开(公告)号：US07572337B2
公开(公告)日：2009-08-11
申请号：US11131010
申请日：2005-05-16
申请人： Juan Carlos Rocha-Alvarez , Ganesh Balasubramanian , Tom K. Cho , Deenesh Padhi , Thomas Nowak , Bok Hoen Kim , Hichem M'Saad , Daemian Raj
发明人： Juan Carlos Rocha-Alvarez , Ganesh Balasubramanian , Tom K. Cho , Deenesh Padhi , Thomas Nowak , Bok Hoen Kim , Hichem M'Saad , Daemian Raj
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/45574 , C23C16/4405 , C23C16/45565 , H01J37/3244 , H01J37/32449
摘要： Apparatus and methods for distributing gases into a processing chamber are disclosed. In one embodiment, the apparatus includes a gas distribution plate having a plurality of apertures disposed therethrough and a blocker plate having both a plurality of apertures disposed therethrough and a plurality of feed through passageways disposed therein. A first gas pathway delivers a first gas through the plurality of apertures in the blocker plate and the gas distribution plate. A bypass gas pathway delivers a second gas through the plurality of feed through passageways in the blocker plate and to areas around the blocker plate prior to the second gas passing through the gas distribution plate.
摘要翻译：公开了将气体分配到处理室中的装置和方法。在一个实施例中，该装置包括一个气体分配板，该气体分配板具有穿过其中的多个孔，以及一个阻挡板，其具有设置在其间的多个孔和设置在其中的多个进给通道。第一气体通道通过阻挡板和气体分配板中的多个孔传送第一气体。旁路气体通道在第二气体通过气体分配板之前，通过多个进料通过阻挡板中的通道和阻塞板周围的区域输送第二气体。

8. 发明申请

US20090104541A1 PLASMA SURFACE TREATMENT TO PREVENT PATTERN COLLAPSE IN IMMERSION LITHOGRAPHY 审中-公开
标题翻译：等离子体表面处理，以防止浸渍图中的图案褶皱
公开(公告)号：US20090104541A1
公开(公告)日：2009-04-23
申请号：US11877559
申请日：2007-10-23
申请人： Eui Kyoon Kim , Deenesh Padhi , Huixiong Dai , Mehul Naik , Martin Jay Seamons , Bok Hoen Kim
发明人： Eui Kyoon Kim , Deenesh Padhi , Huixiong Dai , Mehul Naik , Martin Jay Seamons , Bok Hoen Kim
IPC分类号： G03F1/00
CPC分类号： G03F7/091 , G03F7/11
摘要： The present invention comprises a method of reducing photoresist mask collapse when the photoresist mask is dried after immersion development. As feature sizes continue to shrink, the capillary force of water used to rinse a photoresist mask approaches the point of being greater than adhesion force of the photoresist to the ARC. When the capillary force exceeds the adhesion force, the features of the mask may collapse because the water pulls adjacent features together as the water dries. By depositing a hermetic oxide layer over the ARC before depositing the photoresist, the adhesion force may exceed the capillary force and the features of the photoresist mask may not collapse.
摘要翻译：本发明包括当浸渍显影后干燥光致抗蚀剂掩模时减少光致抗蚀剂掩模塌陷的方法。随着特征尺寸的不断缩小，用于冲洗光致抗蚀剂掩模的水的毛细管力接近光致抗蚀剂对ARC的粘附力。当毛细管力超过粘附力时，面具的特征可能会因为水干燥而将相邻的特征拉到一起而崩溃。通过在沉积光致抗蚀剂之前在ARC上沉积气密的氧化物层，粘合力可能会超过毛细管力，并且光致抗蚀剂掩模的特征可能不会崩溃。

9. 发明申请

US20090068356A1 HIGH PRODUCTIVITY PLASMA PROCESSING CHAMBER 审中-公开
标题翻译：高生产力等离子体加工室
公开(公告)号：US20090068356A1
公开(公告)日：2009-03-12
申请号：US12255884
申请日：2008-10-22
申请人： MARIO David SILVETTI , David H. Quach , Bok Hoen Kim , Thomas Nowak , Thomas K. Cho , Fred H. Hariz , Robert B. Moore
发明人： MARIO David SILVETTI , David H. Quach , Bok Hoen Kim , Thomas Nowak , Thomas K. Cho , Fred H. Hariz , Robert B. Moore
IPC分类号： C23C16/00 , H01L21/3065
CPC分类号： C23C16/4404 , C23C16/4586 , H01J37/32522 , H01J2237/022
摘要： Embodiments of the present invention are generally directed to apparatus and methods for a plasma-processing chamber requiring less maintenance and downtime and possessing improved reliability over the prior art. In one embodiment, the apparatus includes a substrate support resting on a ceramic shaft, an inner shaft allowing for electrical connections to the substrate support at atmospheric pressure, an aluminum substrate support resting on but not fixed to a ceramic support structure, sapphire rest points swaged into the substrate support, and a heating element inside the substrate support arranged in an Archimedes spiral to reduce warping of the substrate support and to increase its lifetime. Methods include increasing time between in-situ cleans of the chamber by reducing particle generation from chamber surfaces. Reduced particle generation occurs via temperature control of chamber components and pressurization of non-processing regions of the chamber relative to the processing region with a purge gas.
摘要翻译：本发明的实施例一般涉及等离子体处理室的装置和方法，其需要较少的维护和停机时间，并且比现有技术具有更高的可靠性。在一个实施例中，该设备包括搁置在陶瓷轴上的基板支撑件，允许在大气压下与基板支撑件电连接的内轴，支撑在陶瓷支撑结构上但不固定到陶瓷支撑结构的铝基板支撑件，模锻的蓝宝石支架衬底支撑件内部的加热元件和布置在阿基米德螺旋中的衬底支撑件内的加热元件，以减少衬底支撑件的翘曲并增加其寿命。方法包括通过减少从室表面产生颗粒来增加室内原位清洗之间的时间。通过腔室部件的温度控制和腔室相对于处理区域的吹扫气体的非处理区域的加压而发生减少的颗粒产生。

10. 发明申请

US20080254233A1 PLASMA-INDUCED CHARGE DAMAGE CONTROL FOR PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION PROCESSES 审中-公开
标题翻译：用于等离子体增强化学蒸气沉积过程的等离子体诱导电荷损失控制
公开(公告)号：US20080254233A1
公开(公告)日：2008-10-16
申请号：US11733531
申请日：2007-04-10
申请人： KWANGDUK DOUGLAS LEE , Matthew Spuller , Martin Jay Seamons , Wendy H. Yeh , Bok Hoen Kim , Mohamad Ayoub , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad
发明人： KWANGDUK DOUGLAS LEE , Matthew Spuller , Martin Jay Seamons , Wendy H. Yeh , Bok Hoen Kim , Mohamad Ayoub , Amir Al-Bayati , Derek R. Witty , Hichem M'Saad
IPC分类号： C23C14/28
CPC分类号： C23C16/26 , C23C16/52
摘要： Methods of depositing amorphous carbon films on substrates are provided herein. The methods reduce or prevent plasma-induced charge damage to the substrates from the deposition of the amorphous carbon films. In one aspect, an initiation layer of amorphous carbon is deposited at a low RF power level and/or at a low hydrocarbon compound/inert gas flow rate ratio before a bulk layer of amorphous carbon is deposited. After the deposition of the initiation layer, the RF power, hydrocarbon flow rate, and inert gas flow rate may be ramped to final values for the deposition of the bulk layer, wherein the RF power ramp rate is typically greater than the ramp rates of the hydrocarbon compound and of the inert gas. In another aspect, a method of minimizing plasma-induced charge damage includes depositing a seasoning layer on one or more interior surfaces of a chamber before the deposition of the amorphous carbon film on a substrate therein or coating the interior surfaces with an oxide or dielectric layer during manufacturing.
摘要翻译：本文提供了在基片上沉积非晶碳膜的方法。该方法从无定形碳膜的沉积中减少或防止等离子体对基板的电荷损伤。在一个方面，在堆积无定形碳沉积层之前，以低RF功率水平和/或低烃化合物/惰性气体流速比沉积无定形碳的起始层。在起始层的沉积之后，RF功率，烃流速和惰性气体流速可以斜坡化到用于沉积体层的最终值，其中RF功率斜坡率通常大于烃化合物和惰性气体。在另一方面，一种使等离子体感应的电荷损伤最小化的方法包括在将非晶碳膜沉积在基底上之前，在腔室的一个或多个内表面上沉积调味层，或者用氧化物或介电层涂覆内表面在制造过程中。

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