专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20120003438A1 GRAPHENE PROCESSING FOR DEVICE AND SENSOR APPLICATIONS 审中-公开
标题翻译：用于设备和传感器应用的石墨加工
公开(公告)号：US20120003438A1
公开(公告)日：2012-01-05
申请号：US13202136
申请日：2010-02-19
申请人： Bill R. Appleton , Brent P. Gila
发明人： Bill R. Appleton , Brent P. Gila
IPC分类号： B32B3/10 , B05D3/10 , B05D3/04 , B05D3/06 , H01L21/30 , B05D5/12
CPC分类号： H01L29/78684 , H01L21/26506 , H01L29/16 , H01L29/1606 , H01L29/7781 , H01L29/78603 , Y10T428/24802
摘要： A supported graphene device comprises at least one graphene feature of 1 to about 10 graphene layers having a predetermined shape and pattern, with at least a portion of each graphene feature being supported on a substrate. In some embodiments the device comprises graphene features supported on crystalline semiconductor substrate, such as silicon or germanium. The graphene features on a crystalline semiconductor substrate can be fabricated by forming an amorphous carbon doped semiconductor on the crystalline semiconductor substrate and then epitaxially crystallizing the amorphous semiconductor with carbon migration to the surface to form a graphene feature of one or more graphene layers. The epitaxy can be promoted by heating the device or by irradiation with a laser. Methods for fabricating graphene on a variety of substrates, over large areas with controlled thicknesses employ ion implantation or other doping techniques followed by pulsed laser annealing or other annealing techniques that result in solid phase regrowth are presented.
摘要翻译：支撑石墨烯装置包括具有预定形状和图案的1至约10个石墨烯层的至少一个石墨烯特征，每个石墨烯特征的至少一部分被支撑在基底上。在一些实施例中，该器件包括支撑在晶体半导体衬底（例如硅或锗）上的石墨烯特征。晶体半导体衬底上的石墨烯特征可以通过在晶体半导体衬底上形成无定形碳掺杂半导体，然后通过碳迁移到表面来外延结晶非晶半导体来形成一个或多个石墨烯层的石墨烯特征来制造。可以通过加热装置或通过用激光照射来促进外延。提出了在各种基板上制造石墨烯的方法，在具有受控厚度的大面积上采用离子注入或其它掺杂技术，随后进行脉冲激光退火或导致固相再生的其它退火技术。

2. 发明申请

US20150010714A1 ION BEAM PROCESSING OF SIC FOR FABRICATION OF GRAPHENE STRUCTURES 审中-公开
标题翻译：用于制造石墨结构的SIC的离子束处理
公开(公告)号：US20150010714A1
公开(公告)日：2015-01-08
申请号：US14236789
申请日：2012-08-23
申请人： Bill R. Appleton , Brent Paul Gila , Sefaattin Tongay , Maxime G. Lemaitre
发明人： Bill R. Appleton , Brent Paul Gila , Sefaattin Tongay , Maxime G. Lemaitre
IPC分类号： C01B31/04
CPC分类号： C01B32/184 , B82Y30/00 , B82Y40/00 , Y10S977/734 , Y10S977/844
摘要： A method of preparing graphene on a SiC substrate includes bombarding a surface of the SiC substrate with ions and annealing a volume of the SiC substrate at the bombarded surface to promote agglomeration of carbon at the bombarded surface to form one or more layers of graphene at that surface. The ions can be Si, C, or other ions such as Au. The annealing can be carried out using a thermal source of heating or by irradiation with at least one laser beam or other high energy beam.
摘要翻译：在SiC衬底上制备石墨烯的方法包括用离子轰击SiC衬底的表面并在轰击的表面退火一部分SiC衬底的体积，以促进在被轰击表面处的碳的聚集，从而形成一层或多层石墨烯表面。离子可以是Si，C或其他离子如Au。退火可以使用加热的热源或通过用至少一个激光束或其他高能量束的照射进行。

3. 发明授权

US4840816A Method of fabricating optical waveguides by ion implantation doping 失效
标题翻译：通过离子注入掺杂制造光波导的方法
公开(公告)号：US4840816A
公开(公告)日：1989-06-20
申请号：US29570
申请日：1987-03-24
申请人： Bill R. Appleton , Paul R. Ashley , Christopher J. Buchal
发明人： Bill R. Appleton , Paul R. Ashley , Christopher J. Buchal
IPC分类号： C23C14/48 , C30B1/02 , C30B31/22 , G02B6/134
CPC分类号： G02B6/1347 , C23C14/48 , C30B1/023 , C30B29/30 , C30B31/22
摘要： A method for fabricating high-quality optical waveguides in optical quality oxide crystals by ion implantation doping and controlled epitaxial recrystallization is provided. Masked LiNbO.sub.3 crystals are implanted with high concentrations of Ti dopant at ion energies of about 350 keV while maintaining the crystal near liquid nitrogen temperature. Ion implantation doping produces an amorphous, Ti-rich nonequilibrium phase in the implanted region. Subsequent thermal annealing in a water-saturated oxygen atmosphere at up to 1000.degree. C. produces solid-phase epitaxial regrowth onto the crystalline substrate. A high-quality single crystalline layer results which incorporates the Ti into the crystal structure at much higher concentrations than is possible by standard diffusion techniques, and this implanted region has excellent optical waveguides properties.
摘要翻译：提供了一种通过离子注入掺杂和受控外延重结晶在光学质量氧化物晶体中制造高品质光波导的方法。掩蔽的LiNbO3晶体以约350keV的离子能量注入高浓度的Ti掺杂剂，同时将晶体保持在液氮附近。离子注入掺杂在植入区域中产生无定形，富Ti的非平衡相。随后在高达1000℃的水饱和氧气氛中进行热退火，在晶体衬底上产生固相外延再生长。结果是将Ti掺入到比通过标准扩散技术可能的浓度高得多的晶体结构中的高质量单晶层，并且该注入区具有优异的光波导特性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式