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    • 1. 发明授权
    • Stepped masking for patterned implantation
    • 步进屏蔽图案植入
    • US08569157B2
    • 2013-10-29
    • US13442571
    • 2012-04-09
    • Benjamin B. RiordonNicholas P. T. BatemanCharles T. Carlson
    • Benjamin B. RiordonNicholas P. T. BatemanCharles T. Carlson
    • H01L21/425
    • H01L21/266H01J37/3172H01L31/1804Y02E10/547Y02P70/521
    • An improved method of moving a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. After the substrate is exposed to the ion beam, the mask is indexed to a new position relative to the substrate and a subsequent implant step is performed. Through the selection of the aperture size and shape, the index distance and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions. In other embodiments, the implant pattern is suitable for use with a bus-bar structure.
    • 公开了一种移动掩模以执行衬底的图案植入的改进方法。 掩模具有多个孔,并且被放置在离子源和基底之间。 在将衬底暴露于离子束之后,掩模被引导到相对于衬底的新位置,并且执行随后的注入步骤。 通过选择孔径尺寸和形状,指数距离和植入步骤的数量,可以产生各种种植体图案。 在一些实施例中,注入图案包括在条纹之间具有较轻掺杂区域的重掺杂水平条纹。 在一些实施例中,植入模式包括重掺杂区域格栅。 在其它实施例中,植入图案适用于汇流条结构。
    • 2. 发明授权
    • Stepped masking for patterned implantation
    • 步进屏蔽图案植入
    • US08173527B2
    • 2012-05-08
    • US12906369
    • 2010-10-18
    • Benjamin B. RiordonNicholas P. T. BatemanCharles T. Carlson
    • Benjamin B. RiordonNicholas P. T. BatemanCharles T. Carlson
    • H01L21/425
    • H01L21/266H01J37/3172H01L31/1804Y02E10/547Y02P70/521
    • An improved method of moving a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. After the substrate is exposed to the ion beam, the mask is indexed to a new position relative to the substrate and a subsequent implant step is performed. Through the selection of the aperture size and shape, the index distance and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions. In other embodiments, the implant pattern is suitable for use with a bus-bar structure.
    • 公开了一种移动掩模以执行衬底的图案植入的改进方法。 掩模具有多个孔,并且被放置在离子源和基底之间。 在将衬底暴露于离子束之后,掩模被引导到相对于衬底的新位置,并且执行随后的注入步骤。 通过选择孔径尺寸和形状,指数距离和植入步骤的数量,可以产生各种种植体图案。 在一些实施例中,注入图案包括在条纹之间具有较轻掺杂区域的重掺杂水平条纹。 在一些实施例中,植入模式包括重掺杂区域格栅。 在其它实施例中,植入图案适用于汇流条结构。
    • 7. 发明授权
    • System and method for multi-wafer scanning in ion implanters
    • 离子注入机中多晶圆扫描的系统和方法
    • US06995381B2
    • 2006-02-07
    • US10730863
    • 2003-12-08
    • Alan P. ShengBenjamin B. RiordonLawrence M. Ficarra
    • Alan P. ShengBenjamin B. RiordonLawrence M. Ficarra
    • H01J37/317
    • H01J37/3171H01J37/1474
    • Methods and systems are provided for increasing the efficiency of the ion beam during scanning workpieces in ion implanting such that multiple wafers are arranged on a platen or support so that a greater portion of the beam scans the workpiece surface. Specifically, an apparatus is provided for ion implanting a plurality of workpieces. The apparatus includes an ion source for generating an ion beam having a scan width and a scan distance which defines a predetermined scan area, a holder for receiving the workpieces that are arranged so as to maximize the surface area of the workpieces present within the predetermined scan area. Thereby, a scanner may scan the ion beam over the predetermined scan area so that the utilization efficiency of said ion beam on the workpieces is increased. More particularly, the workpieces may be semiconductor wafers that are arranged over the holder or a platen according to the formula: ds=√{square root over (Dw2−(ws−Dw))}2*(Qw−1)+Dw+OS As a result of arranging the workpieces on the holder in this manner, the utilization of ion beam is maximized.
    • 提供了用于在离子注入期间扫描工件期间提高离子束效率的方法和系统,使得多个晶片布置在压板或支撑件上,使得光束的较大部分扫描工件表面。 具体地,提供了用于离子注入多个工件的装置。 该装置包括用于产生具有限定预定扫描区域的扫描宽度和扫描距离的离子束的离子源,用于接收工件的保持器,其被布置成使存在于预定扫描内的工件的表面积最大化 区。 因此,扫描仪可以在预定扫描区域上扫描离子束,使得离子束在工件上的利用效率增加。 更具体地,工件可以是根据形式布置在保持器或压板上的半导体晶片
    • 8. 发明授权
    • System and method for aligning substrates for multiple implants
    • 用于对准多个植入物的基底的系统和方法
    • US08895325B2
    • 2014-11-25
    • US13458441
    • 2012-04-27
    • John W. GraffBenjamin B. RiordonNicholas P. T. Bateman
    • John W. GraffBenjamin B. RiordonNicholas P. T. Bateman
    • H01L21/00B05C11/00
    • H01J37/3171H01J37/3045H01J2237/31711H01L21/266
    • A system and method are disclosed for aligning substrates during successive process steps, such as ion implantation steps, is disclosed. Implanted regions are created on a substrate. After implantation, an image is obtained of the implanted regions, and a fiducial is provided on the substrate in known relation to at least one of the implanted regions. A thermal anneal process is performed on the substrate such that the implanted regions are no longer visible but the fiducial remains visible. The position of the fiducial may be used in downstream process steps to properly align pattern masks over the implanted regions. The fiducial also may be applied to the substrate before any ion implanting of the substrate is performed. The position of the fiducial with respect to an edge or a corner of the substrate may be used for aligning during downstream process steps. Other embodiments are described and claimed.
    • 公开了用于在连续工艺步骤期间对准衬底的系统和方法,例如离子注入步骤。 在衬底上形成植入区域。 在植入之后,获得植入区域的图像,并且已知关系到至少一个植入区域的基底上提供了基准。 在基板上进行热退火处理,使得注入区域不再可见,但基准仍然可见。 基准的位置可以用于下游处理步骤,以便在注入区域上正确对准图案掩模。 在进行基板的任何离子注入之前,基准也可以应用于基板。 基准面相对于衬底的边缘或拐角的位置可用于在下游工艺步骤期间对准。 描述和要求保护其他实施例。