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1. 发明申请

US20130249061A1 SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME, AND SUBSTRATE 有权
标题翻译：半导体器件，其制造方法和衬底
公开(公告)号：US20130249061A1
公开(公告)日：2013-09-26
申请号：US13600683
申请日：2012-08-31
申请人： Atsushi MURAKOSHI
发明人： Atsushi MURAKOSHI
IPC分类号： H01L29/36 , H01L21/265
CPC分类号： H01L21/26513 , H01L21/26566 , H01L21/3221 , H01L27/14603
摘要： According to an embodiment, a semiconductor device includes a substrate provided with a first region including an active element, the substrate including a second region containing boron with a density of 2×1020 cm−3 or more on a surface excluding the first region.
摘要翻译：根据实施例，半导体器件包括设置有包括有源元件的第一区域的衬底，该衬底包括在除第一区域之外的表面上含有密度为2×1020cm-3或更高的硼的第二区域。

2. 发明授权

US08120081B2 Solid-state imaging device and method for manufacturing same 失效
标题翻译：固态成像装置及其制造方法
公开(公告)号：US08120081B2
公开(公告)日：2012-02-21
申请号：US12557014
申请日：2009-09-10
申请人： Atsushi Murakoshi
发明人： Atsushi Murakoshi
IPC分类号： H01L31/0328
CPC分类号： H01L27/14689 , H01L21/76898 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L27/1464
摘要： In a back-illuminated solid-state imaging device, a multilayer interconnect layer, a semiconductor substrate, a plurality of color filters, and a plurality of microlenses are provided in this order. A p-type region is formed so as to partition a lower portion of the semiconductor substrate into a plurality of regions, and an insulating member illustratively made of BSG is buried immediately above the p-type region. PD regions are isolated from each other by the p-type region and the insulating member. Moreover, a high-concentration region is formed in a lower portion of the PD region, and an upper portion is served as a low-concentration region.
摘要翻译：在背照式固态成像装置中，按顺序设置多层互连层，半导体基板，多个滤色器和多个微透镜。形成p型区域，以便将半导体衬底的下部分隔成多个区域，并且示例性地由BSG制成的绝缘构件被埋在p型区域的正上方。 PD区域通过p型区域和绝缘构件彼此隔离。此外，在PD区域的下部形成高浓度区域，将上部作为低浓度区域。

3. 发明授权

US07977141B2 Solid-state image pickup device and method of manufacturing the same 有权
标题翻译：固体摄像装置及其制造方法
公开(公告)号：US07977141B2
公开(公告)日：2011-07-12
申请号：US12551084
申请日：2009-08-31
申请人： Tsubasa Harada , Atsushi Murakoshi
发明人： Tsubasa Harada , Atsushi Murakoshi
IPC分类号： H01L21/00
CPC分类号： H01L27/14636 , H01L21/76898 , H01L23/481 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14685 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a solid-state image pickup device according to an embodiment includes forming first and second holes in a semiconductor substrate, forming insulating films on surfaces of the first and second holes, forming a contact and an alignment mark by embedding a conducting material in the first and second holes, forming a photodiode in the semiconductor substrate, forming a wiring layer including a connecting part for connecting to the contact and a wiring for connecting to the connecting part, bonding a supporting substrate on the wiring layer, exposing the contact and the alignment mark on the surface of the semiconductor substrate by reducing the semiconductor substrate in thickness, and forming a filter and a lens on the photodiode based on the alignment mark.
摘要翻译：根据实施例的制造固态图像拾取装置的方法包括在半导体衬底中形成第一和第二孔，在第一和第二孔的表面上形成绝缘膜，通过嵌入导电材料形成接触和对准标记在第一和第二孔中，在半导体衬底中形成光电二极管，形成布线层，该布线层包括用于连接到触点的连接部分和用于连接到连接部分的布线，将支撑基板接合在布线层上，以及半导体衬底的表面上的对准标记，并且基于对准标记在二极管上形成滤光器和透镜。

4. 发明申请

US20110079833A1 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20110079833A1
公开(公告)日：2011-04-07
申请号：US12926771
申请日：2010-12-08
申请人： Atsushi Murakoshi , Katsunori Yahashi
发明人： Atsushi Murakoshi , Katsunori Yahashi
IPC分类号： H01L31/113
CPC分类号： H01L27/1463 , H01L21/76229 , H01L21/823481 , H01L27/14689
摘要： A hard mask material film is formed on a semiconductor substrate and a recess is formed immediately below an opening in an upper surface of the semiconductor substrate. Next, a p-type region is formed immediately below the recess by implanting impurities into an imaging region using the hard mask material film as a mask. Moreover, a trench is formed by further processing the recess in a processing region. A half-buried dielectric film and a STI are formed by burying a dielectric material in the recess and the trench to remove the hard mask material film. Next, two electrodes are formed so as to overlap the half-buried dielectric film and the STI, respectively, and impurities are implanted into the imaging region using one electrode and the half-buried dielectric film as a mask, and hence a n-type region constituting a photodiode is formed in a region being in contact with the p-type region in the semiconductor substrate.
摘要翻译：在半导体基板上形成硬掩模材料膜，并且在半导体基板的上表面的开口的正下方形成凹部。接下来，使用硬掩模材料膜作为掩模，通过将杂质注入成像区域而在凹部的正下方形成p型区域。此外，通过在处理区域中进一步处理凹部来形成沟槽。通过在凹槽和沟槽中埋入介电材料以除去硬掩模材料膜来形成半埋电介质膜和STI。接下来，形成两个电极，以分别与半埋电介质膜和STI重叠，并且使用一个电极和半埋电介质膜作为掩模将杂质注入到成像区域中，因此n型构成光电二极管的区域形成在与半导体衬底中的p型区域接触的区域中。

5. 发明申请

US20110031576A1 SOLID-STATE IMAGING DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：固态成像装置及其制造方法
公开(公告)号：US20110031576A1
公开(公告)日：2011-02-10
申请号：US12722716
申请日：2010-03-12
申请人： Seiichi Iwasa , Yoshio Kasai , Takeshi Yousyou , Tsutomu Sato , Atsushi Murakoshi
发明人： Seiichi Iwasa , Yoshio Kasai , Takeshi Yousyou , Tsutomu Sato , Atsushi Murakoshi
IPC分类号： H01L27/146 , H01L21/265
CPC分类号： H01L21/26513 , H01L21/2652 , H01L27/1463 , H01L27/14689
摘要： A solid-state imaging device includes a first-conductive semiconductor layer, a second-conductive semiconductor layer that is provided on the first-conductive semiconductor layer, a light receiving element that is formed in the second-conductive semiconductor layer, and an element isolation region that is formed to surround the light receiving element in an in-plane direction of the second-conductive semiconductor layer, in which the element isolation region includes a first-conductive first element isolation unit that is connected to the first-conductive semiconductor layer, a hollow that is formed on the first-conductive first element isolation unit, and a first-conductive second element isolation unit that is formed on the hollow.
摘要翻译：固态成像装置包括：第一导电半导体层，设置在第一导电半导体层上的第二导电半导体层，形成在第二导电半导体层中的光接收元件，以及元件隔离区域，其形成为在第二导电半导体层的面内方向上包围光接收元件，其中元件隔离区域包括连接到第一导电半导体层的第一导电第一元件隔离单元，形成在所述第一导电性第一元件隔离单元上的中空部，以及形成在所述中空部上的第一导电性第二元件隔离单元。

6. 发明申请

US20100181637A1 SOLID-STATE IMAGE PICKUP DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：固态图像拾取装置及其制造方法
公开(公告)号：US20100181637A1
公开(公告)日：2010-07-22
申请号：US12551084
申请日：2009-08-31
申请人： Tsubasa Harada , Atsushi Murakoshi
发明人： Tsubasa Harada , Atsushi Murakoshi
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L27/14636 , H01L21/76898 , H01L23/481 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14685 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a solid-state image pickup device according to an embodiment includes forming first and second holes in a semiconductor substrate, forming insulating films on surfaces of the first and second holes, forming a contact and an alignment mark by embedding a conducting material in the first and second holes, forming a photodiode in the semiconductor substrate, forming a wiring layer including a connecting part for connecting to the contact and a wiring for connecting to the connecting part, bonding a supporting substrate on the wiring layer, exposing the contact and the alignment mark on the surface of the semiconductor substrate by reducing the semiconductor substrate in thickness, and forming a filter and a lens on the photodiode based on the alignment mark.
摘要翻译：根据实施例的制造固态图像拾取装置的方法包括在半导体衬底中形成第一和第二孔，在第一和第二孔的表面上形成绝缘膜，通过嵌入导电材料形成接触和对准标记在第一和第二孔中，在半导体衬底中形成光电二极管，形成布线层，该布线层包括用于连接到触点的连接部分和用于连接到连接部分的布线，将支撑基板接合在布线层上，以及半导体衬底的表面上的对准标记，并且基于对准标记在二极管上形成滤光器和透镜。

7. 发明授权

US06939787B2 Method for fabricating semiconductor device having gate electrode with polymetal structure of polycrystalline silicon film and metal film 有权
标题翻译：具有多晶硅膜和金属膜多金属结构的栅电极的半导体器件的制造方法
公开(公告)号：US06939787B2
公开(公告)日：2005-09-06
申请号：US10962504
申请日：2004-10-13
申请人： Fumio Ohtake , Yasushi Akasaka , Atsushi Murakoshi , Kyoichi Suguro
发明人： Fumio Ohtake , Yasushi Akasaka , Atsushi Murakoshi , Kyoichi Suguro
IPC分类号： H01L29/78 , H01L21/28 , H01L29/49 , H01L21/3205 , H01L21/4763
CPC分类号： H01L29/6656 , H01L21/28061 , H01L21/28247 , H01L29/4941
摘要： The semiconductor device comprises a pair of impurity diffused regions formed in a silicon substrate 10, spaced from each other, and a gate electrode 26 formed above the silicon substrate 10 between the pair of impurity diffused regions 38 intervening a gate insulation film 12 therebetween. The gate electrode 26 is formed of a polycrystalline silicon film 16 formed on the gate insulation film 12, a polycrystalline silicon film 30 formed on the polycrystalline silicon film 16 and having crystal grain boundaries discontinuous to the polycrystalline silicon film 16, a metal nitride film 20 formed on the polycrystalline silicon film 30, and a metal film 22 formed on the barrier metal film 20. Whereby diffusion of the boron from the first polycrystalline silicon film 16 toward the metal nitride film 20 can be decreased. Thus, depletion of the gate electrode 26 can be suppressed.
摘要翻译：半导体器件包括彼此间隔开的形成在硅衬底10中的一对杂质扩散区域，以及在栅极绝缘膜12之间形成的一对杂质扩散区域38之间形成在硅衬底10上方的栅电极26。栅电极26由形成在栅极绝缘膜12上的多晶硅膜16，形成在多晶硅膜16上并具有与多晶硅膜16不连续的晶粒边界的多晶硅膜30，金属氮化物膜20 形成在多晶硅膜30上，金属膜22形成在阻挡金属膜20上。由此可以减少硼从第一多晶硅膜16朝向金属氮化物膜20的扩散。因此，能够抑制栅电极26的耗尽。

8. 发明授权

US06875986B1 Ion generation method and filament for ion generation apparatus 失效
标题翻译：用于离子发生装置的离子生成方法和长丝
公开(公告)号：US06875986B1
公开(公告)日：2005-04-05
申请号：US09559345
申请日：2000-04-27
申请人： Atsushi Murakoshi , Kyoichi Suguro , Katsuya Okumura
发明人： Atsushi Murakoshi , Kyoichi Suguro , Katsuya Okumura
IPC分类号： H01J27/02 , H01J27/08 , H01J37/08
CPC分类号： H01J27/08 , H01J27/02 , H01J2237/08 , H01J2237/31701
摘要： According to the ion generation method, ion source material composed of an element of desired ions to be generated and I is heated so that vapor of the compound is generated, and the ions are generated by discharging the vapor. The iodide has no corrosiveness, and can be stably ionized. Further, it hardly reacts with oxygen or water and is safe.
摘要翻译：根据离子产生方法，由要产生的所需离子的元素组成的离子源材料被加热，使得产生化合物的蒸汽，并且通过排出蒸气产生离子。碘化物没有腐蚀性，可以稳定地电离。此外，它几乎不与氧气或水反应并且是安全的。

9. 发明授权

US06693023B2 Ion implantation method and ion implantation equipment 失效
标题翻译：离子注入法和离子注入设备
公开(公告)号：US06693023B2
公开(公告)日：2004-02-17
申请号：US10079490
申请日：2002-02-22
申请人： Atsushi Murakoshi , Kyoichi Suguro
发明人： Atsushi Murakoshi , Kyoichi Suguro
IPC分类号： H01L2104
CPC分类号： H01J37/3171 , H01L21/26513
摘要： In an ion implantation method using an ion implantation equipment having an extraction electrode and a post accelerator, ion is uniformly implanted into a shallow region from the surface of a sample by setting an applied volt. of the post accelerator higher than an applied volt. of the extraction electrode.
摘要翻译：在使用具有提取电极和后加速器的离子注入设备的离子注入方法中，通过设定施加电压，将离子从样品的表面均匀地注入浅区域。的后加速器高于施加电压。的提取电极。

10. 发明授权

US5698869A Insulated-gate transistor having narrow-bandgap-source 失效
标题翻译：具有窄带隙源的绝缘栅晶体管
公开(公告)号：US5698869A
公开(公告)日：1997-12-16
申请号：US527515
申请日：1995-09-13
申请人： Makoto Yoshimi , Satoshi Inaba , Atsushi Murakoshi , Mamoru Terauchi , Naoyuki Shigyo , Yoshiaki Matsushita , Masami Aoki , Takeshi Hamamoto , Yutaka Ishibashi , Tohru Ozaki , Hitomi Kawaguchiya , Kazuya Matsuzawa , Osamu Arisumi , Akira Nishiyama
发明人： Makoto Yoshimi , Satoshi Inaba , Atsushi Murakoshi , Mamoru Terauchi , Naoyuki Shigyo , Yoshiaki Matsushita , Masami Aoki , Takeshi Hamamoto , Yutaka Ishibashi , Tohru Ozaki , Hitomi Kawaguchiya , Kazuya Matsuzawa , Osamu Arisumi , Akira Nishiyama
IPC分类号： H01L21/336 , H01L27/12 , H01L29/786 , H01L31/072
CPC分类号： H01L29/66666 , H01L27/1203 , H01L29/66772 , H01L29/78618 , H01L29/78681
摘要： A structure of a semiconductor device and a method of manufacturing the same is provided wherein a leakage current can be reduced while improving a drain breakdown voltage of an Insulated-Gate transistor such as a MOSFET, MOSSIT and a MISFET, and a holding characteristic of a memory cell such as a DRAM using these transistors as switching transistors can be improved, and further a reliability of a gate oxide film in a transfer gate can be improved. More particularly, a narrow band gap semiconductor region such as Si.sub.x Ge.sub.1-x, Si.sub.x Sn.sub.1-x, PbS is formed in an interior of a source region or a drain region in the SOI.IG-device. By selecting location and/or mole fraction of the narrow band gap semiconductor region in a SOI film, or selecting a kind of impurity element to compensate the crystal lattice mismatching due to the narrow-bandgap semiconductor region, the generation of crystal defects can be suppressed. Further the structure that the influences of the crystal defects to the transistor or memory characteristics such as the leakage current can be suppressed, even if the crystal defects are generated, are also proposed.
摘要翻译：提供半导体器件的结构及其制造方法，其中可以减小漏电流，同时改善诸如MOSFET，MOSSIT和MISFET的绝缘栅晶体管的漏极击穿电压，以及保持特性可以提高诸如使用这些晶体管的DRAM作为开关晶体管的存储单元，并且还可以提高传输栅极中的栅极氧化膜的可靠性。更具体地，在SOI.IG器件中的源极区域或漏极区域的内部形成诸如SixGe1-x，SixSn1-x，PbS的窄带隙半导体区域。通过选择SOI膜中的窄带隙半导体区域的位置和/或摩尔分数，或者选择一种杂质元素来补偿由于窄带隙半导体区域引起的晶格失配，可以抑制晶体缺陷的产生。此外，即使产生晶体缺陷，也可以抑制晶体缺陷对晶体管的影响或漏电流等存储特性的结构。

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