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    • 1. 发明授权
    • Weather strip for motor vehicle
    • 汽车天气条
    • US5852898A
    • 1998-12-29
    • US818661
    • 1997-03-14
    • Atsushi HikosakaMasahiro Nozaki
    • Atsushi HikosakaMasahiro Nozaki
    • B60J10/00B60J10/04B60J10/06E06B7/22
    • B60J10/84B60J10/16B60J10/248B60J10/35B60J10/77B60J10/79
    • An extruded weather strip having a tubular configuration and adapted to be bonded to a body wall along a roof side of a vehicle body, which defines a door opening thereof, with a double-sided adhesive tape. The weather strip includes a bottom portion adapted to be bonded to the body wall with the double-sided adhesive tape, and a seal wall including sides that are connected to both side ends of the bottom portion. The weather strip further includes first and second internal bridge members which interconnect the bottom portion and the seal wall. One end of the first bridge is connected to the seal wall at a position inside of where a door window pane will push on that seal wall while the other end is connected to an outer side end of the bottom portion. One end of the second bridge is connected to the seal wall in a position similar to the first bridge while the other end is connected to an inner side end of the bottom portion.
    • 一种具有管状构造并且适于通过双面胶带将车门开口的车体的车顶侧的主体壁结合的挤压防风条。 防风条包括适于用双面胶带粘合到主体壁的底部,以及包括连接到底部的两个侧端的侧面的密封壁。 防风条还包括互连底部和密封壁的第一和第二内部桥接件。 第一桥的一端在门窗玻璃将推压在该密封壁上的位置处连接到密封壁,而另一端连接到底部的外侧端。 第二桥的一端在与第一桥相似的位置处连接到密封壁,而另一端连接到底部的内侧端。
    • 2. 发明授权
    • Weather strip attaching structure
    • 天气条附着结构
    • US5556672A
    • 1996-09-17
    • US371491
    • 1995-01-11
    • Keiji AkachiAtsushi Hikosaka
    • Keiji AkachiAtsushi Hikosaka
    • B60J10/04B60J10/00B60J10/06B60R13/06F06B7/16
    • B60J10/79B60J10/248B60J10/30B60J10/77B60J10/7775Y10T428/249953
    • A weather strip attaching structure with which a weather strip can be readily attached to a retainer without use of a roller jig or the like. In the structure according to the present invention for attaching a weather strip 50 to a retainer 70 provided along a door opening 10 of a vehicle body, the weather strip 50 includes a hollow sealing portion 56 for being sealingly abutted against the edge portion of a door glass plate 40, and an attaching base portion 52 having engaging protrusions 54a and 54b, which are meant to engage with engaging recesses 74 and 76 of the retainer 70. The hollow sealing portion 56 has at least one inclined side wall 57. The retainer 70 comprises a bottom 72 which is mounted on the vehicle body, the engaging recesses 74 and 76 formed at opposite ends of the bottom 72, and an inclined supporting portion 78 provided above the engaging recess 76, for supporting the inclined side wall 57 of the hollow sealing portion 56 of the weather strip. The depth (T) of the engaging recess 76 located below the inclined supporting portion 78 is at least 1.5 times the thickness (t) of the engaging protrusion 54b.
    • 一种防风条附接结构,其中耐候条可以容易地附接到保持器而不使用辊夹具等。 在根据本发明的用于将防风条50附接到沿着车体的门开口10设置的保持器70的结构中,防风条50包括中空密封部56,用于密封地抵靠门的边缘部分 玻璃板40和具有接合突起54a和54b的附接基部52,其意在与保持器70的接合凹部74和76接合。中空密封部56具有至少一个倾斜侧壁57.保持器70 包括安装在车身上的底部72,形成在底部72的相对端处的接合凹部74和76以及设置在接合凹部76上方的倾斜支撑部78,用于支撑中空部的倾斜侧壁57 密封部分56。 位于倾斜支撑部78下方的接合凹部76的深度(T)至少为接合突起54b的厚度(t)的1.5倍。
    • 5. 发明授权
    • Method for manufacturing SOI substrate
    • 制造SOI衬底的方法
    • US08247308B2
    • 2012-08-21
    • US12505020
    • 2009-07-17
    • Akihiro IshizukaShinya SasagawaMotomu KurataAtsushi HikosakaTaiga MuraokaHitoshi Nakayama
    • Akihiro IshizukaShinya SasagawaMotomu KurataAtsushi HikosakaTaiga MuraokaHitoshi Nakayama
    • H01L21/30
    • H01L21/76254
    • It is an object of the preset invention to increase adhesiveness of a semiconductor layer and a base substrate and to reduce defective bonding. An oxide film is formed on a semiconductor substrate and the semiconductor substrate is irradiated with accelerated ions through the oxide film, whereby an embrittled region is formed at a predetermined depth from a surface of the semiconductor substrate. Plasma treatment is performed on the oxide film on the semiconductor substrate and the base substrate by applying a bias voltage, the surface of the semiconductor substrate and a surface of the base substrate are disposed opposite to each other, a surface of the oxide film is bonded to the surface of the base substrate, heat treatment is performed after the surface of the oxide film is bonded to the surface of the base substrate, and separation is caused along the embrittled region, whereby a semiconductor layer is formed over the base substrate with the oxide film interposed therebetween.
    • 本发明的一个目的是增加半导体层和基底衬底的粘附性并减少不良接合。 在半导体衬底上形成氧化物膜,半导体衬底通过氧化膜照射加速离子,从而在半导体衬底的表面形成预定深度的脆化区域。 通过施加偏置电压对半导体衬底和基底衬底上的氧化物膜进行等离子体处理,半导体衬底的表面和基底衬底的表面彼此相对设置,氧化膜的表面被接合 在基底表面上进行热处理之后,在氧化膜的表面接合到基底表面之后进行热处理,沿着脆化区域分离,由此在基底基板上形成半导体层 氧化膜。
    • 6. 发明申请
    • METHOD FOR MANUFACTURING SOI SUBSTRATE
    • 制造SOI衬底的方法
    • US20100047997A1
    • 2010-02-25
    • US12505020
    • 2009-07-17
    • Akihiro ISHIZUKAShinya SASAGAWAMotomu KURATAAtsushi HIKOSAKATaiga MURAOKAHitoshi NAKAYAMA
    • Akihiro ISHIZUKAShinya SASAGAWAMotomu KURATAAtsushi HIKOSAKATaiga MURAOKAHitoshi NAKAYAMA
    • H01L21/762
    • H01L21/76254
    • It is an object of the preset invention to increase adhesiveness of a semiconductor layer and a base substrate and to reduce defective bonding. An oxide film is formed on a semiconductor substrate and the semiconductor substrate is irradiated with accelerated ions through the oxide film, whereby an embrittled region is formed at a predetermined depth from a surface of the semiconductor substrate. Plasma treatment is performed on the oxide film on the semiconductor substrate and the base substrate by applying a bias voltage, the surface of the semiconductor substrate and a surface of the base substrate are disposed opposite to each other, a surface of the oxide film is bonded to the surface of the base substrate, heat treatment is performed after the surface of the oxide film is bonded to the surface of the base substrate, and separation is caused along the embrittled region, whereby a semiconductor layer is formed over the base substrate with the oxide film interposed therebetween.
    • 本发明的一个目的是增加半导体层和基底衬底的粘附性并减少不良接合。 在半导体衬底上形成氧化物膜,半导体衬底通过氧化膜照射加速离子,从而在半导体衬底的表面形成预定深度的脆化区域。 通过施加偏置电压对半导体衬底和基底衬底上的氧化物膜进行等离子体处理,半导体衬底的表面和基底衬底的表面彼此相对设置,氧化膜的表面被接合 在基底表面上进行热处理之后,在氧化膜的表面接合到基底表面之后进行热处理,沿脆化区域分离,由此在基底基板上形成半导体层 氧化膜。