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1. 发明授权

US08390076B2 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08390076B2
公开(公告)日：2013-03-05
申请号：US12420363
申请日：2009-04-08
申请人： Atsuhiro Suzuki , Hiroshi Shimode , Takeshi Shimane , Norihisa Arai , Minori Kajimoto
发明人： Atsuhiro Suzuki , Hiroshi Shimode , Takeshi Shimane , Norihisa Arai , Minori Kajimoto
IPC分类号： H01L21/70
CPC分类号： H01L27/0207 , H01L21/823425 , H01L27/11519 , H01L27/11526 , H01L27/11529
摘要： According to an aspect of the present invention, there is provided a semiconductor device including: a semiconductor substrate; active areas with island-like shapes formed on the semiconductor substrate; an element isolation area surrounding the active areas and including an element isolation groove formed on the semiconductor substrate and an element isolation film embedded into the element isolation groove; gate insulating films each formed on corresponding one of the active areas and having a first end portion that overhangs from the corresponding active area onto the element isolation area at one side and a second end portion that overhangs from the corresponding active area onto the element isolation area at the other side, wherein an overhang of the first end portion has a different length from a length of an overhang of the second end portion.
摘要翻译：根据本发明的一个方面，提供了一种半导体器件，包括：半导体衬底; 在半导体基板上形成岛状形状的有源区域; 围绕有源区域并包括形成在半导体衬底上的元件隔离槽和嵌入元件隔离槽中的元件隔离膜的元件隔离区; 栅极绝缘膜各自形成在相应的一个有源区上，并且具有第一端部，该第一端部从相应的有源区域突出到一侧的元件隔离区域和从相应的有源区域突出到元件隔离区域上的第二端部在另一侧，其中第一端部的突出端具有与第二端部的突出部的长度不同的长度。

2. 发明授权

US08186172B2 Structure for sensing refrigerant flow rate in a compressor 失效
标题翻译：用于检测压缩机中制冷剂流量的结构
公开(公告)号：US08186172B2
公开(公告)日：2012-05-29
申请号：US11894320
申请日：2007-08-20
申请人： Yoshinori Inoue , Hirokazu Mesaki , Atsuhiro Suzuki
发明人： Yoshinori Inoue , Hirokazu Mesaki , Atsuhiro Suzuki
IPC分类号： F25B49/00
CPC分类号： F04B27/1804 , F04B2205/01 , F04B2205/061 , F04B2205/062 , F04B2205/08 , F04B2205/09 , F25B2700/13
摘要： A structure for sensing refrigerant flow rate in a compressor. The structure includes a passage forming member, a restriction hole, a differential pressure-type flow rate sensor, and a partition plate. The compressor includes a housing connected to an external refrigerant circuit via a refrigerant passage. The passage forming member is connected to an outer surface of the housing and forms a part of the refrigerant passage. The restriction hole divides the refrigerant passage into an upstream passage and a downstream passage. The upstream passage is formed in either the housing or the passage forming member. The sensor is provided in the passage forming member and detects pressure in the upstream passage and pressure in the downstream passage to sense flow rate of refrigerant in the refrigerant passage. The partition plate is disposed between the housing and the passage forming member. The restriction hole is formed in the partition plate to extend through the partition plate.
摘要翻译：用于感测压缩机中的制冷剂流量的结构。该结构包括通道形成构件，限制孔，差压式流量传感器和隔板。压缩机包括通过制冷剂通道连接到外部制冷剂回路的壳体。通道形成构件连接到壳体的外表面并形成制冷剂通道的一部分。限制孔将制冷剂通道分成上游通道和下游通道。上游通道形成在壳体或通道形成构件中。传感器设置在通道形成构件中，并且检测上游通道中的压力和下游通道中的压力以感测制冷剂通道中制冷剂的流量。分隔板设置在壳体和通道形成构件之间。在隔板中形成限制孔以延伸穿过隔板。

3. 发明申请

US20090189213A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF FABRICATING THE SAME 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20090189213A1
公开(公告)日：2009-07-30
申请号：US12354200
申请日：2009-01-15
申请人： Kazuhiro MATSUO , Masayuki TANAKA , Atsuhiro SUZUKI
发明人： Kazuhiro MATSUO , Masayuki TANAKA , Atsuhiro SUZUKI
IPC分类号： H01L29/792 , H01L21/283 , H01L21/764
CPC分类号： H01L29/42336 , H01L27/115 , H01L27/11521 , H01L29/94
摘要： A nonvolatile semiconductor memory device includes a semiconductor substrate having a plurality of active regions separately formed by a plurality of trenches formed in a surface of the substrate at predetermined intervals, a first gate insulating film formed on an upper surface of the substrate corresponding to each active region, a gate electrode of a memory cell transistor formed by depositing an electrical charge storage layer formed on an upper surface of the gate insulating film, a second gate insulating film and a control gate insulating film sequentially, an element isolation insulating film buried in each trench and formed from a coating type oxide film, and an insulating film formed inside each trench on a boundary between the semiconductor substrate and the element isolation insulating film, the insulating film containing nontransition metal atoms and having a film thickness not more than 5 Å.
摘要翻译：非易失性半导体存储器件包括：半导体衬底，具有由以形成在衬底的表面中的预定间隔分开形成的多个沟槽分开形成的多个有源区;形成在衬底的上表面上的第一栅极绝缘膜，区域，通过依次沉积形成在栅极绝缘膜的上表面上的电荷存储层，第二栅极绝缘膜和控制栅极绝缘膜而形成的存储单元晶体管的栅电极，每个区域中埋设的元件隔离绝缘膜沟槽，并且由涂覆型氧化物膜形成，并且在半导体衬底和元件隔离绝缘膜之间的边界上形成在每个沟槽内的绝缘膜，所述绝缘膜包含非转移金属原子并且具有不大于5的膜厚度。

4. 发明申请

US20090039444A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090039444A1
公开(公告)日：2009-02-12
申请号：US12180828
申请日：2008-07-28
申请人： Atsuhiro SUZUKI
发明人： Atsuhiro SUZUKI
IPC分类号： H01L21/8234 , H01L27/088
CPC分类号： H01L29/0847 , H01L21/823418 , H01L21/823462 , H01L29/41775 , H01L29/66621 , H01L29/66636 , H01L29/7834
摘要： A semiconductor device includes a semiconductor substrate including an upper surface having a first region including a pair of first impurity diffusion regions and a first channel region located between the impurity diffusion regions and a second region including a recess having a predetermined depth relative to the upper surface, a first gate insulating film, a first gate electrode of a first transistor supplying a first voltage, a second gate insulating film having a second thickness larger than a first thickness of the first gate insulating film, an upper surface of the second gate insulating film located at a same level as an upper surface of the first gate insulating film, and a second gate electrode of a second transistor supplying a second voltage being higher than the first voltage.
摘要翻译：半导体器件包括：半导体衬底，包括具有包括一对第一杂质扩散区的第一区域和位于杂质扩散区之间的第一沟道区的上表面，以及包括相对于上表面具有预定深度的凹部的第二区第一栅极绝缘膜，提供第一电压的第一晶体管的第一栅极电极，具有大于第一栅极绝缘膜的第一厚度的第二厚度的第二栅极绝缘膜，第二栅极绝缘膜的上表面位于与第一栅极绝缘膜的上表面相同的电平上，第二晶体管的第二栅电极提供高于第一电压的第二电压。

5. 发明申请

US20080104984A1 Structure for sensing refrigerant flow rate in a compressor 失效
标题翻译：用于检测压缩机中制冷剂流量的结构
公开(公告)号：US20080104984A1
公开(公告)日：2008-05-08
申请号：US11978036
申请日：2007-10-26
申请人： Akinobu Kanai , Hiroyuki Nakaima , Yoshinori Inoue , Atsuhiro Suzuki
发明人： Akinobu Kanai , Hiroyuki Nakaima , Yoshinori Inoue , Atsuhiro Suzuki
IPC分类号： F25B49/00
CPC分类号： F04B27/1804 , F04B2205/08 , F25B1/02 , F25B43/02 , F25B2400/02 , F25B2400/076 , F25B2700/13
摘要： The compressor has a differential pressure type flow rate detector that obtains the pressure in an upstream passage and the pressure in a downstream passage to detect a refrigerant flow rate within a refrigerant passage. The detector has an accommodation chamber, and a partition body slidably accommodated within the accommodation chamber. The partition body comparts the accommodation chamber into a high pressure chamber to which the pressure in the upstream passage is introduced, and a low pressure chamber to which the pressure in the downstream passage is introduced. The compressor has an oil separator having an oil introduction passage connected to the oil separating chamber and a high pressure introduction passage introducing the pressure in the upstream passage to the high pressure chamber. The oil introduction passage introduces the oil separated from the refrigerant by the oil separator to a pressure zone other than a discharge pressure zone.
摘要翻译：压缩机具有压力型流量检测器，其获得上游通路中的压力和下游通道中的压力，以检测制冷剂通道内的制冷剂流量。检测器具有容纳室和可容纳在容纳室内的分隔体。分隔体将容纳室配合到上游通路的压力被引入的高压室和下游通路的压力被引入的低压室。压缩机具有油分离器，该油分离器具有连接到油分离室的油引入通道和将上游通道中的压力引入高压室的高压引入通道。引油通道将通过油分离器从制冷剂分离的油引入除了排出压力区域之外的压力区域。

6. 发明授权

US07812391B2 Nonvolatile semiconductor memory device and method of fabricating the same 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US07812391B2
公开(公告)日：2010-10-12
申请号：US12354200
申请日：2009-01-15
申请人： Kazuhiro Matsuo , Masayuki Tanaka , Atsuhiro Suzuki
发明人： Kazuhiro Matsuo , Masayuki Tanaka , Atsuhiro Suzuki
IPC分类号： H01L21/76
CPC分类号： H01L29/42336 , H01L27/115 , H01L27/11521 , H01L29/94
摘要： A nonvolatile semiconductor memory device includes a semiconductor substrate having a plurality of active regions separately formed by a plurality of trenches formed in a surface of the substrate at predetermined intervals, a first gate insulating film formed on an upper surface of the substrate corresponding to each active region, a gate electrode of a memory cell transistor formed by depositing an electrical charge storage layer formed on an upper surface of the gate insulating film, a second gate insulating film and a control gate insulating film sequentially, an element isolation insulating film buried in each trench and formed from a coating type oxide film, and an insulating film formed inside each trench on a boundary between the semiconductor substrate and the element isolation insulating film, the insulating film containing nontransition metal atoms and having a film thickness not more than 5 Å.
摘要翻译：非易失性半导体存储器件包括：半导体衬底，具有由以形成在衬底的表面中的预定间隔分开形成的多个沟槽分开形成的多个有源区;形成在衬底的上表面上的第一栅极绝缘膜，区域，通过依次沉积形成在栅极绝缘膜的上表面上的电荷存储层，第二栅极绝缘膜和控制栅极绝缘膜而形成的存储单元晶体管的栅电极，每个区域中埋设的元件隔离绝缘膜沟槽，并且由涂覆型氧化物膜形成，并且在半导体衬底和元件隔离绝缘膜之间的边界上形成在每个沟槽内的绝缘膜，所述绝缘膜包含非转移金属原子并且具有不大于5的膜厚度。

7. 发明授权

US07658081B2 Structure for sensing refrigerant flow rate in a compressor 失效
标题翻译：用于检测压缩机中制冷剂流量的结构
公开(公告)号：US07658081B2
公开(公告)日：2010-02-09
申请号：US11978036
申请日：2007-10-26
申请人： Akinobu Kanai , Hiroyuki Nakaima , Yoshinori Inoue , Atsuhiro Suzuki
发明人： Akinobu Kanai , Hiroyuki Nakaima , Yoshinori Inoue , Atsuhiro Suzuki
IPC分类号： F25B49/00
CPC分类号： F04B27/1804 , F04B2205/08 , F25B1/02 , F25B43/02 , F25B2400/02 , F25B2400/076 , F25B2700/13
摘要： The compressor has a differential pressure type flow rate detector that obtains the pressure in an upstream passage and the pressure in a downstream passage to detect a refrigerant flow rate within a refrigerant passage. The detector has an accommodation chamber, and a partition body slidably accommodated within the accommodation chamber. The partition body comparts the accommodation chamber into a high pressure chamber to which the pressure in the upstream passage is introduced, and a low pressure chamber to which the pressure in the downstream passage is introduced. The compressor has an oil separator having an oil introduction passage connected to the oil separating chamber and a high pressure introduction passage introducing the pressure in the upstream passage to the high pressure chamber. The oil introduction passage introduces the oil separated from the refrigerant by the oil separator to a pressure zone other than a discharge pressure zone.
摘要翻译：压缩机具有压力型流量检测器，其获得上游通路中的压力和下游通道中的压力，以检测制冷剂通道内的制冷剂流量。检测器具有容纳室和可容纳在容纳室内的分隔体。分隔体将容纳室配合到上游通路的压力被引入的高压室和下游通路的压力被引入的低压室。压缩机具有油分离器，该油分离器具有连接到油分离室的油引入通道和将上游通道中的压力引入高压室的高压引入通道。引油通道将通过油分离器从制冷剂分离的油引入除了排出压力区域之外的压力区域。

8. 发明申请

US20100018386A1 COMPRESSOR 有权
标题翻译：压缩机
公开(公告)号：US20100018386A1
公开(公告)日：2010-01-28
申请号：US12095424
申请日：2007-03-20
申请人： Yoshinori Inoue , Hirokazu Mesaki , Masaya Sakamoto , Atsuhiro Suzuki , Akinobu Kanai , Tomoji Tarutani , Naoki Koeda , Osamu Nakayama
发明人： Yoshinori Inoue , Hirokazu Mesaki , Masaya Sakamoto , Atsuhiro Suzuki , Akinobu Kanai , Tomoji Tarutani , Naoki Koeda , Osamu Nakayama
IPC分类号： F15B21/04 , F04B39/00
CPC分类号： F04B27/109 , F04B49/225 , F04B2027/1872
摘要： The compressor is provided with an oil separator for separating oil from refrigerant gas introduced into a separation chamber, an annular space for reserving oil separated from the refrigerant gas, and a reservoir chamber for reserving the thus separated oil. The oil separator is provided in a cylindrical hole formed in a discharge chamber from which the refrigerant gas is discharged and a lid for partitioning the cylindrical hole from the discharge chamber is provided in the cylindrical hole. The oil separator introduces the refrigerant gas from the discharge chamber to the separation chamber via the introduction passage. The annular space is provided around the lid and connected to the reservoir chamber via an oil passage. The reservoir chamber is connected to a crank chamber of a pressure lower than that in the discharge chamber.
摘要翻译：该压缩机设置有用于将油从导入分离室的制冷剂气体中分离的油分离器，用于储存与制冷剂气体分离的油的环形空间，以及用于储存这样分离的油的储存室。油分离器设置在形成在排出室中的圆筒形孔中，制冷剂气体从该排出室排出，并且在圆柱形孔中设置有用于将圆柱形孔与排出室隔开的盖。油分离器通过引入通道将制冷剂气体从排出室引入分离室。环形空间设置在盖的周围，并通过油路连接到储存室。储存室连接到压力低于放电室的曲柄室。

9. 发明授权

US07280404B2 Nonvolatile semiconductor memory device that erases stored data after a predetermined time period without the use of a timer circuit 有权
标题翻译：非易失性半导体存储器件，其在不使用定时器电路的情况下，在预定时间段之后擦除存储的数据
公开(公告)号：US07280404B2
公开(公告)日：2007-10-09
申请号：US11087735
申请日：2005-03-24
申请人： Atsuhiro Suzuki
发明人： Atsuhiro Suzuki
IPC分类号： G11C11/34 , G11C16/06 , G11C16/04
CPC分类号： G11C16/3418 , G11C16/06 , G11C16/16 , G11C16/22 , G11C16/3431
摘要： A nonvolatile semiconductor memory device is characterized by including a memory cell to store data, a first reference cell, a check circuit to check a threshold of the first reference cell, and an erase circuit to erase the data of the memory cell in response to detection by the check circuit that the threshold of the first reference cell is smaller than or substantially equal to a predetermined fixed value.
摘要翻译：非易失性半导体存储器件的特征在于包括用于存储数据的存储单元，第一参考单元，用于检查第一参考单元的阈值的校验电路和擦除电路，以便响应于检测而擦除存储单元的数据通过检查电路，第一参考单元的阈值小于或基本上等于预定的固定值。

10. 发明申请

US20060028871A1 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US20060028871A1
公开(公告)日：2006-02-09
申请号：US11087735
申请日：2005-03-24
申请人： Atsuhiro Suzuki
发明人： Atsuhiro Suzuki
IPC分类号： G11C16/06
CPC分类号： G11C16/3418 , G11C16/06 , G11C16/16 , G11C16/22 , G11C16/3431
摘要： A nonvolatile semiconductor memory device is characterized by including a memory cell to store data, a first reference cell, a check circuit to check a threshold of the first reference cell, and an erase circuit to erase the data of the memory cell in response to detection by the check circuit that the threshold of the first reference cell is smaller than or substantially equal to a predetermined fixed value.
摘要翻译：非易失性半导体存储器件的特征在于包括用于存储数据的存储单元，第一参考单元，用于检查第一参考单元的阈值的校验电路和擦除电路，以便响应于检测而擦除存储单元的数据通过检查电路，第一参考单元的阈值小于或基本上等于预定的固定值。

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