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1. 发明授权

US08192257B2 Method of manufacture of constant groove depth pads 有权
标题翻译：恒定槽深度垫的制造方法
公开(公告)号：US08192257B2
公开(公告)日：2012-06-05
申请号：US11400707
申请日：2006-04-06
申请人： Naga Chandrasekaran , Arun Vishwanathan
发明人： Naga Chandrasekaran , Arun Vishwanathan
IPC分类号： B24D11/00
CPC分类号： B24B53/017 , B24B37/26
摘要： Processing pads for mechanical and/or chemical-mechanical planarization or polishing of substrates in the fabrication of microelectronic devices, methods for making the pads, and methods, apparatus, and systems that utilize and incorporate the processing pads are provided. The processing pads include grooves or other openings in the abrading surface containing a solid or partially solid fill material that can be selectively removed as desired to maintain the fill at an about constant or set distance from the abrading surface of the pad and an about constant depth of the pad openings for multiple processing and conditioning applications over the life of the pad.
摘要翻译：提供了用于制造微电子器件的基板的机械和/或化学机械平面化或抛光的加工垫，用于制造焊盘的方法，以及利用并结合处理焊盘的方法，装置和系统。处理垫包括在研磨表面中的凹槽或其它开口，其包含固体或部分固体填充材料，其可根据需要选择性地去除，以将填充物保持在与研磨表面近似恒定或设定的距离以及约恒定深度的焊盘开口，用于在焊盘寿命期间的多个处理和调节应用。

2. 发明申请

US20070238297A1 Method of manufacture of constant groove depth pads 有权
标题翻译：恒定槽深度垫的制造方法
公开(公告)号：US20070238297A1
公开(公告)日：2007-10-11
申请号：US11400707
申请日：2006-04-06
申请人： Naga Chandrasekaran , Arun Vishwanathan
发明人： Naga Chandrasekaran , Arun Vishwanathan
IPC分类号： H01L21/302
CPC分类号： B24B53/017 , B24B37/26
摘要： Processing pads for mechanical and/or chemical-mechanical planarization or polishing of substrates in the fabrication of microelectronic devices, methods for making the pads, and methods, apparatus, and systems that utilize and incorporate the processing pads are provided. The processing pads include grooves or other openings in the abrading surface containing a solid or partially solid fill material that can be selectively removed as desired to maintain the fill at an about constant or set distance from the abrading surface of the pad and an about constant depth of the pad openings for multiple processing and conditioning applications over the life of the pad.
摘要翻译：提供了用于制造微电子器件的基板的机械和/或化学机械平面化或抛光的加工垫，用于制造焊盘的方法，以及利用并结合处理焊盘的方法，装置和系统。处理垫包括在研磨表面中的凹槽或其它开口，其包含固体或部分固体填充材料，其可根据需要选择性地去除，以将填充物保持在与研磨表面近似恒定或设定的距离以及约恒定深度的焊盘开口，用于在焊盘寿命期间的多个处理和调节应用。

3. 发明授权

US06454634B1 Polishing pads for chemical mechanical planarization 有权
标题翻译：抛光垫用于化学机械平面化
公开(公告)号：US06454634B1
公开(公告)日：2002-09-24
申请号：US09631784
申请日：2000-08-03
申请人： David B. James , Arun Vishwanathan , Lee Melbourne Cook , Peter A. Burke , David Shidner
发明人： David B. James , Arun Vishwanathan , Lee Melbourne Cook , Peter A. Burke , David Shidner
IPC分类号： B24B100
CPC分类号： B24B37/26 , B24B37/042 , B24D3/28
摘要： An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad exhibits a stable morphology that can be reproduced easily and consistently. The pad surface resists glazing, thereby requiring less frequent and less aggressive conditioning. The benefits of such a polishing pad are low dishing of metal features, low oxide erosion, reduced pad conditioning, longer pad life, high metal removal rates, good planarization, and lower defectivity (scratches and Light Point Defects).
摘要翻译：用于在半导体晶片上抛光金属镶嵌结构的改进的焊盘和工艺。该方法包括以下步骤：将聚合物片材的表面压在聚合物片材的表面上，并与含有亚微米级颗粒的含水基液体组合，并提供在压力下使晶片和抛光垫片相对运动的装置，接触导致平面去除所述晶片的表面，其中抛光垫在去除所述负载时具有低弹性恢复，使得片材的机械响应大大无弹性。改进的焊盘的特征在于具有高的能量耗散以及高焊盘刚度。该垫具有稳定的形态，可以容易且一致地再现。垫表面抵抗玻璃窗，从而需要较少的频繁和较不积极的调理。这种抛光垫的优点是金属特征的低凹陷，低氧化物侵蚀，减少的焊盘调节，更长的焊盘寿命，高金属去除速率，良好的平坦化和较低的缺陷（划痕和光点缺陷）。

4. 发明授权

US06749485B1 Hydrolytically stable grooved polishing pads for chemical mechanical planarization 有权
标题翻译：水解稳定的槽式抛光垫用于化学机械平面化
公开(公告)号：US06749485B1
公开(公告)日：2004-06-15
申请号：US09665841
申请日：2000-09-20
申请人： David B. James , Arun Vishwanathan , Lee Melbourne Cook , Peter A. Burke , David Shidner , Joseph K. So , John V. H. Roberts
发明人： David B. James , Arun Vishwanathan , Lee Melbourne Cook , Peter A. Burke , David Shidner , Joseph K. So , John V. H. Roberts
IPC分类号： B24B100
CPC分类号： B24B37/26 , B24B13/04 , B24B37/042 , B24D3/28 , Y10S451/921
摘要： An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness and hydrolytic stability.
摘要翻译：用于在半导体晶片上抛光金属镶嵌结构的改进的焊盘和工艺。该方法包括以下步骤：将聚合物片材的表面压在聚合物片材的表面上，并与含有亚微米级颗粒的含水基液体组合，并提供在压力下使晶片和抛光垫片相对运动的装置，接触导致平面去除所述晶片的表面，其中抛光垫在去除所述负载时具有低弹性恢复，使得片材的机械响应大大无弹性。改进的垫的特征在于具有高的能量耗散以及高的垫刚度和水解稳定性。

5. 发明授权

US06736709B1 Grooved polishing pads for chemical mechanical planarization 有权
标题翻译：用于化学机械平面化的凹槽抛光垫
公开(公告)号：US06736709B1
公开(公告)日：2004-05-18
申请号：US09631783
申请日：2000-08-03
申请人： David B. James , Arun Vishwanathan , Lee Melbourne Cook , Peter A. Burke , David Shidner , Joseph K. So , John V. H. Roberts
发明人： David B. James , Arun Vishwanathan , Lee Melbourne Cook , Peter A. Burke , David Shidner , Joseph K. So , John V. H. Roberts
IPC分类号： B24B500
CPC分类号： B24B37/26 , B24D3/28
摘要： An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing, pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad also exhibits a stable morphology that can be reproduced easily and consistently. The pad surface has macro-texture that includes perforations as well as surface groove designs The surface groove designs have specific relationships between groove depth and overall pad thickness and groove.area and land area. The pad of this invention resists glazing, thereby requiring less frequent and less aggressive conditioning. The benefits of such a polishing pad are low dishing of metal features, low oxide erosion, reduced pad conditioning, longer pad life, better slurry distribution and waste removal from the pad surface, high metal removal rates, good planarization, and lower defectivity (scratches and Light Point Defects).
摘要翻译：用于在半导体晶片上抛光金属镶嵌结构的改进的焊盘和工艺。该方法包括以下步骤：将聚合物片材的表面压在聚合物片材的表面上，与水性液体组合，任选地含有亚微米级的颗粒，并提供用于在压力下使晶片和抛光垫相对运动的装置，使得移动加压接触导致所述晶片的表面的平面去除，其中抛光垫在去除所述负载时具有低弹性恢复，使得片材的机械响应大大无弹性。改进的焊盘的特征在于具有高的能量耗散以及高焊盘刚度。该垫还具有稳定的形态，可以容易地和一致地再现。焊盘表面具有包括穿孔以及表面凹槽设计的宏观纹理。表面凹槽设计具有凹槽深度和总体垫厚度以及凹槽和凹槽面积之间的具体关系。本发明的垫子抵抗玻璃窗，从而需要较少的频繁和较不积极的调理。这种抛光垫的优点是金属特征的低凹陷，低氧化物侵蚀，减少的焊盘调节，更长的焊盘寿命，更好的浆料分布和从焊盘表面的废物移除，高金属去除速率，良好的平坦化和较低的缺陷（划痕和光点缺陷）。

6. 发明授权

US06361409B1 Polymeric polishing pad having improved surface layer and method of making same 有权
标题翻译：具有改进的表面层的聚合物抛光垫及其制造方法
公开(公告)号：US06361409B1
公开(公告)日：2002-03-26
申请号：US09406962
申请日：1999-09-28
申请人： Arun Vishwanathan , David L. Shidner
发明人： Arun Vishwanathan , David L. Shidner
IPC分类号： B24B100
CPC分类号： B24B53/017 , B24D3/28
摘要： A polishing pad made of polymeric material has an improved surface layer which is provided by treating a surface of the polishing pad with a chemical solvent. Solubility parameter is used to select a suitable chemical solvent. The treated polishing pad can be conditioned in substantially less time than an untreated pad.
摘要翻译：由聚合物材料制成的抛光垫具有改进的表面层，其通过用化学溶剂处理抛光垫的表面而提供。溶解度参数用于选择合适的化学溶剂。经处理的抛光垫可以在比未经处理的垫更短的时间内进行调理。

7. 发明授权

US08550878B2 Method of manufacture of constant groove depth pads 有权
标题翻译：恒定槽深度垫的制造方法
公开(公告)号：US08550878B2
公开(公告)日：2013-10-08
申请号：US13469524
申请日：2012-05-11
申请人： Naga Chandrasekaran , Arun Vishwanathan
发明人： Naga Chandrasekaran , Arun Vishwanathan
IPC分类号： B24B1/00
CPC分类号： B24B53/017 , B24B37/26
摘要： Processing pads for mechanical and/or chemical-mechanical planarization or polishing of substrates in the fabrication of microelectronic devices, methods for making the pads, and methods, apparatus, and systems that utilize and incorporate the processing pads are provided. The processing pads include grooves or other openings in the abrading surface containing a solid or partially solid fill material that can be selectively removed as desired to maintain the fill at an about constant or set distance from the abrading surface of the pad and an about constant depth of the pad openings for multiple processing and conditioning applications over the life of the pad.
摘要翻译：提供了用于制造微电子器件的基板的机械和/或化学机械平面化或抛光的加工垫，用于制造焊盘的方法，以及利用并结合处理焊盘的方法，装置和系统。处理垫包括在研磨表面中的凹槽或其它开口，其包含固体或部分固体填充材料，其可根据需要选择性地去除，以将填充物保持在与研磨表面近似恒定或设定的距离以及约恒定深度的焊盘开口，用于在焊盘寿命期间的多个处理和调节应用。

8. 发明申请

US20120225612A1 Method of Manufacture of Constant Groove Depth Pads 有权
标题翻译：恒槽深度垫的制造方法
公开(公告)号：US20120225612A1
公开(公告)日：2012-09-06
申请号：US13469524
申请日：2012-05-11
申请人： Naga Chandrasekaran , Arun Vishwanathan
发明人： Naga Chandrasekaran , Arun Vishwanathan
IPC分类号： B24D11/00 , B24B29/00 , B24D18/00 , B24B1/00
CPC分类号： B24B53/017 , B24B37/26
摘要： Processing pads for mechanical and/or chemical-mechanical planarization or polishing of substrates in the fabrication of microelectronic devices, methods for making the pads, and methods, apparatus, and systems that utilize and incorporate the processing pads are provided. The processing pads include grooves or other openings in the abrading surface containing a solid or partially solid fill material that can be selectively removed as desired to maintain the fill at an about constant or set distance from the abrading surface of the pad and an about constant depth of the pad openings for multiple processing and conditioning applications over the life of the pad.
摘要翻译：提供了用于制造微电子器件的基板的机械和/或化学机械平面化或抛光的加工垫，用于制造焊盘的方法，以及利用并结合处理焊盘的方法，装置和系统。处理垫包括在研磨表面中的凹槽或其它开口，其包含固体或部分固体填充材料，其可根据需要选择性地去除，以将填充物保持在与研磨表面近似恒定或设定的距离以及约恒定深度的焊盘开口，用于在焊盘寿命期间的多个处理和调节应用。

9. 发明授权

US06860802B1 Polishing pads for chemical mechanical planarization 有权
标题翻译：抛光垫用于化学机械平面化
公开(公告)号：US06860802B1
公开(公告)日：2005-03-01
申请号：US09608537
申请日：2000-06-30
申请人： Arun Vishwanathan , David B. James , Lee Melbourne Cook , Peter A. Burke , David Shidner
发明人： Arun Vishwanathan , David B. James , Lee Melbourne Cook , Peter A. Burke , David Shidner
IPC分类号： B24B37/04 , B24D3/28 , B24D13/14 , B24D11/00
CPC分类号： B24B37/26 , B24B37/042 , B24D3/28
摘要： An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad exhibits a stable morphology that can be reproduced easily and consistently. The pad surface resists glazing, thereby requiring less frequent and less aggressive conditioning. The benefits of such a polishing pad are low dishing of metal features, low oxide erosion, reduced pad conditioning, longer pad life, high metal removal rates, good planarization, and lower defectivity (scratches and Light Point Defects).
摘要翻译：用于在半导体晶片上抛光金属镶嵌结构的改进的焊盘和工艺。该方法包括以下步骤：将聚合物片材的表面压在聚合物片材的表面上，并与含有亚微米级颗粒的含水基液体组合，并提供在压力下使晶片和抛光垫片相对运动的装置，接触导致平面去除所述晶片的表面，其中抛光垫在去除所述负载时具有低的弹性恢复，使得片材的机械响应大大无弹性。改进的焊盘的特征在于具有高的能量耗散以及高焊盘刚度。该垫具有稳定的形态，可以容易且一致地再现。垫表面抵抗玻璃窗，从而需要较少的频繁和较不积极的调理。这种抛光垫的优点是金属特征的低凹陷，低氧化物侵蚀，减少的焊盘调节，更长的焊盘寿命，高金属去除速率，良好的平坦化和较低的缺陷（划痕和光点缺陷）。

10. 发明申请

US20050020082A1 Polishing pads for chemical mechanical planarization 审中-公开
公开(公告)号：US20050020082A1
公开(公告)日：2005-01-27
申请号：US10922715
申请日：2004-08-20
申请人： Arun Vishwanathan , David James , Lee Cook , Peter Burke , David Shidner
发明人： Arun Vishwanathan , David James , Lee Cook , Peter Burke , David Shidner
IPC分类号： B24B37/04 , B24D3/28 , B24D13/14 , B24B49/00 , B24B51/00 , H01L21/302 , H01L21/461
CPC分类号： B24B37/26 , B24B37/042 , B24D3/28
摘要： An improved pad and process for polishing metal damascene structures on a semiconductor wafer. The process includes the steps of pressing the wafer against the surface of a polymer sheet in combination with an aqueous-based liquid that optionally contains sub-micron particles and providing a means for relative motion of wafer and polishing pad under pressure so that the moving pressurized contact results in planar removal of the surface of said wafer, wherein the polishing pad has a low elastic recovery when said load is removed, so that the mechanical response of the sheet is largely anelastic. The improved pad is characterized by a high energy dissipation coupled with a high pad stiffness. The pad exhibits a stable morphology that can be reproduced easily and consistently. The pad surface resists glazing, thereby requiring less frequent and less aggressive conditioning. The benefits of such a polishing pad are low dishing of metal features, low oxide erosion, reduced pad conditioning, longer pad life, high metal removal rates, good planarization, and lower defectivity (scratches and Light Point Defects).

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