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    • 1. 发明申请
    • Liquid and method for liquid immersion lithography
    • 液浸法和液浸式光刻法
    • US20050186513A1
    • 2005-08-25
    • US10784922
    • 2004-02-24
    • Martin LetzKonrad KnappHauke EsemannAndreas Voitsch
    • Martin LetzKonrad KnappHauke EsemannAndreas Voitsch
    • G03F7/00G03F7/20
    • G03F7/2041G03F7/70341G03F7/70566
    • The present invention relates to a new class of compound useful as liquid for immersion lithography, said liquid comprising molecules so that said liquid is substantially transparent at a wavelength used for said liquid immersion lithography, wherein a degree of polarization of light, which is incident on a sample of said liquid in a forward direction and which is scattered in a direction perpendicular to said forward direction within a plane of scattering defined by said forward direction and said direction perpendicular to said forward direction, is larger than 0.9. Suited liquids are, for example, such comprising molecules transparent to UV radiation, wherein said molecules are high-symmetric molecules. Suited compounds are defined by A(R)4 wherein A is defined to be a 4-valent element and R is selected from —(C)n— and —(Si)n—, with n=1 to 10, wherein the remaining valences of the carbon or silica are saturated by one (or more) selected from hydrogen and a halogen. The invention further relates to a method for exposing a photoresist layer on a semiconductor substrate for producing microelectronic circuits or micro-electromechanical systems (MEMS). The method uses a step of liquid immersion lithography using a liquid according to the invention.
    • 本发明涉及可用作浸没式光刻液体的新类化合物,所述液体包含分子,使得所述液体在用于所述液浸光刻的波长处基本上是透明的,其中入射到 所述液体在向前方向上的样品在垂直于所述正向方向的垂直方向和垂直于所述正向的方向的散射面内沿垂直于所述正向的方向散射,大于0.9。 合适的液体例如是包含对UV辐射透明的分子,其中所述分子是高对称分子。 适用的化合物由<?in-line-formula description =“In-line Formulas”end =“lead”?> A(R)<4> <?in-line-formula description =“In 其中A定义为4价元素,并且R选自 - (C)n - 和 - (Si)n < 其中n = 1至10,其中碳或二氧化硅的剩余价数由选自氢和卤素的一个(或多个)饱和。 本发明还涉及用于在用于制造微电子电路或微机电系统(MEMS)的半导体衬底上曝光光致抗蚀剂层的方法。 该方法使用根据本发明的液体的液浸光刻步骤。
    • 3. 发明申请
    • Liquid And Method For Liquid Immersionlithography
    • 液体和液体浸没法的方法
    • US20080145794A1
    • 2008-06-19
    • US12035152
    • 2008-02-21
    • Martin LetzKonrad KnappHauke EsemannAndreas Voitsch
    • Martin LetzKonrad KnappHauke EsemannAndreas Voitsch
    • G03F7/26G03F7/20
    • G03F7/2041G03F7/70341G03F7/70566
    • The present invention relates to a new class of compound useful as liquid for immersion lithography, said liquid comprising molecules so that said liquid is substantially transparent at a wavelength used for said liquid immersion lithography, wherein a degree of polarization of light, which is incident on a sample of said liquid in a forward direction and which is scattered in a direction perpendicular to said forward direction within a plane of scattering defined by said forward direction and said direction perpendicular to said forward direction, is larger than 0.9. Suited liquids are, for example, such comprising molecules transparent to UV radiation, wherein said molecules are high-symmetric molecules. Suited compounds are defined by A(R)4 wherein A is defined to be a 4-valent element and R is selected from —(C)n— and —(Si)n—, with n=1 to 10, wherein the remaining valences of the carbon or silica are saturated by one (or more) selected from hydrogen and a halogen.The invention farther relates to a method for exposing a photoresist layer on a semiconductor substrate for producing microelectronic circuits or micro-electromechanical systems (MEMS). The method uses a step of liquid immersion lithography using a liquid according to the invention.
    • 本发明涉及可用作浸没式光刻液体的新类化合物,所述液体包含分子,使得所述液体在用于所述液浸光刻的波长处基本上是透明的,其中入射到 所述液体在向前方向上的样品在垂直于所述正向方向的垂直方向和垂直于所述正向的方向的散射面内沿垂直于所述正向的方向散射,大于0.9。 合适的液体例如是包含对UV辐射透明的分子,其中所述分子是高对称分子。 适用的化合物由<?in-line-formula description =“In-line Formulas”end =“lead”?> A(R)<4> <?in-line-formula description =“In 其中A定义为4价元素,并且R选自 - (C)n - 和 - (Si)n < 其中n = 1至10,其中碳或二氧化硅的剩余价数由选自氢和卤素的一个(或多个)饱和。 本发明还涉及用于在用于制造微电子电路或微机电系统(MEMS)的半导体衬底上曝光光致抗蚀剂层的方法。 该方法使用根据本发明的液体的液浸光刻步骤。
    • 5. 发明授权
    • Synthetic quartz glass preform
    • 合成石英玻璃预制件
    • US06423656B1
    • 2002-07-23
    • US09381490
    • 1999-09-10
    • Frank CoriandAndreas MenzelAndreas Voitsch
    • Frank CoriandAndreas MenzelAndreas Voitsch
    • C03C900
    • C03C4/0085C03B19/1407C03B19/1423C03B2201/07C03B2201/21C03B2201/23C03B2207/62C03C3/06C03C2201/21C03C2201/23C03C2203/40
    • The invention relates to a synthetic quartz glass preform which is produced according to the flame hydrolysis technique with subsequent cooling and is suitable for the application of high-energy DUV radiation in the wave length range under 250 nm. Said preform has a core area which contains ≧1150 ppm OH, a strain double refraction of ≦5 nm/cm and a resistance to high-energy DUV radiation as a result of a transmission reduction of &Dgr; T ≦0.1 %/cm thickness. The quartz glass has been exposed to the following radiation: wavelength &lgr;1=248 nm, laser shot frequency ≧300 Hz, laser shot value ≧109 and rumination ≦10 mJ/cm2, and wavelength &lgr;2=193 nm, laser shot frequency ≧300 Hz, laser shot value ≧109 and rumination ≦5 mJ/cm2. A device for producing said preform comprises a horizontally positioned muffle with two different-sized openings facing each other. The larger of said openings is for removing the preform, the smaller opening being for introducing a burner. The internal chamber of the muffle narrows from the larger opening to the smaller opening.
    • 本发明涉及一种根据火焰水解技术制备的合成石英玻璃预制件,随后冷却,适用于在250nm以下的波长范围内应用高能量DUV辐射。 所述预制棒具有包含> = 1150ppm OH的核心区域,<= 5nm / cm的应变双折射和由于DELTA T <= 0.1%/ cm的透射率降低而导致的对高能量DUV辐射的耐受性 厚度。 石英玻璃暴露于以下辐射:波长lambd1 = 248nm,激光射击频率> = 300Hz,激光射击值> = 109和反射<= 10mJ / cm 2,波长lambd2 = 193nm,激光射击频率 > = 300Hz,激光拍摄值> = 109,反光<= 5mJ / cm 2。 用于生产所述预制件的装置包括水平定位的马弗炉,其具有彼此面对的两个不同尺寸的开口。 所述开口中较大的一个用于去除预型件,较小的开口用于引入燃烧器。 马弗炉的内腔从较大的开口变窄到较小的开口。