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1. 发明授权

US06324199B1 Intersubband light source with separate electron injector and reflector/extractor 有权
标题翻译：带有独立电子注入器和反射器/提取器的带内光源
公开(公告)号：US06324199B1
公开(公告)日：2001-11-27
申请号：US09195260
申请日：1998-11-18
申请人： Federico Capasso , Alfred Yi Cho , Sung-Nee George Chu , Claire F. Gmachl , Albert Lee Hutchinson , Deborah Lee Sivco , Alessandro Tredicucci
发明人： Federico Capasso , Alfred Yi Cho , Sung-Nee George Chu , Claire F. Gmachl , Albert Lee Hutchinson , Deborah Lee Sivco , Alessandro Tredicucci
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/3402
摘要： An intersubband semiconductor light source comprises a core region that includes a unipolar, radiative transition (RT) region having upper and lower energy levels, an injector-only (I) region disposed on one side of the RT region, and a reflector/extractor-only (R/E) region disposed on the other side of the RT region. The I region has a first miniband of energy levels aligned so as to inject electrons into the upper energy level, and the R/E region has a second miniband of energy levels aligned so as to extract electrons from the lower energy level. The R/E region also has a minigap aligned so as to inhibit the extraction of electrons from the upper level. A suitable voltage applied across the core region is effective to cause the RT region to generate light at a wavelength determined by the energy difference between the upper and lower energy levels. Low voltage operation at less than 3 V is described.
摘要翻译：子带间半导体光源包括芯区域，其包括具有上和下能级的单极辐射跃迁（RT）区域，设置在RT区域的一侧上的仅注射器（I）区域，以及反射器/ （R / E）区域设置在RT区域的另一侧。 I区具有对准能量水平的第一小能级以将电子注入到上能量级中，并且R / E区具有对准的能级的第二小容纳，从而从较低的能级提取电子。 R / E区域也具有微小的栅极排列，从而抑制从上层提取电子。在芯区域上施加的合适电压有效地使得RT区域产生由上和下能量级之间的能量差确定的波长的光。描述低于3V的低电压操作。

2. 发明申请

US20110080931A1 CIRCULAR SEMICONDUCTOR LASERS HAVING LATTICES FOR VERTICAL EMISSION 审中-公开
标题翻译：圆形半导体激光器具有垂直发射的光栅
公开(公告)号：US20110080931A1
公开(公告)日：2011-04-07
申请号：US12940209
申请日：2010-11-05
申请人： Alessandro TREDICUCCI , Fabio BELTRAM , Lucas MAHLER
发明人： Alessandro TREDICUCCI , Fabio BELTRAM , Lucas MAHLER
IPC分类号： H01S5/34 , H01S5/10 , H01S3/06 , B82Y20/00 , B82Y99/00
CPC分类号： H01S5/3401 , B82Y20/00 , G02B6/12007 , H01S5/1042 , H01S5/1046 , H01S5/1071 , H01S5/1075 , H01S5/18 , H01S5/187 , H01S5/2004 , H01S5/42 , H01S2302/02
摘要： A semiconductor laser includes a laser resonator (1) having a planar active region (3), a first (2) and a second (6) wave-guide layer that define the active region (3). The resonator (1) has a shape that is defined by a perimeter, along which the first layer (2) radiation guide has a plurality of cuts (4) forming a lattice. The cuts are made as at least two adjacent slits (4a, 4b) and a zone between the slits in which an uncut portion (5a) of wave-guiding layer is present. In the case of a circular semiconductor laser, the number of cuts (4) is a prime number, or an odd number that is a multiple of a prime number, the prime number being greater than or equal to five. This way, it is avoided that resonance modes evolve outside of the zone with the cuts, or in any case with a component that is different from zero of the wave vector in a radial direction, and a pure whispering gallery operating mode is obtained, with maximum of the emitted radiation that evolves in a vertical direction, i.e. orthogonal to the plane of the laser resonator, and without the laser emitting radiation evolving in a radial direction.
摘要翻译：半导体激光器包括具有平面有源区（3），限定有源区（3）的第一（2）和第二（6）波导层的激光谐振器（1）。谐振器（1）具有由周边限定的形状，第一层（2）辐射引导件沿着该周边具有形成网格的多个切口（4）。切口形成为至少两个相邻的狭缝（4a，4b）和在其中存在波导层的未切割部分（5a）的狭缝之间的区域。在圆形半导体激光器的情况下，切割次数（4）是素数，或是素数的倍数的奇数，素数大于或等于5。这样避免了共振模式在具有切割的区域之外演变，或者在任何情况下都以与径向方向上的波矢的零度不同的分量进行演化，并且获得纯粹的耳语画廊操作模式，在垂直方向（即，垂直于激光谐振器的平面）并且没有激光发射辐射在径向方向上演化的发射辐射的最大值。

3. 发明授权

US06400744B1 Apparatus comprising a quantum cascade laser having improved distributed feedback for single-mode operation 有权
标题翻译：包括具有改进的用于单模操作的分布反馈的量子级联激光器的装置
公开(公告)号：US06400744B1
公开(公告)日：2002-06-04
申请号：US09512757
申请日：2000-02-25
申请人： Federico Capasso , Alfred Yi Cho , Sung-Nee George Chu , Claire F. Gmachi , Ruedeger Koehler , Deborah Lee Sivco , Alessandro Tredicucci
发明人： Federico Capasso , Alfred Yi Cho , Sung-Nee George Chu , Claire F. Gmachi , Ruedeger Koehler , Deborah Lee Sivco , Alessandro Tredicucci
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/0425 , H01S5/06216 , H01S5/0622 , H01S5/1046 , H01S5/12 , H01S5/1228 , H01S5/1231 , H01S5/3402
摘要： An article comprising a QC-DFB laser is disclosed. In the QC-DFB laser, an overlying grating structure achieves relatively strong coupling of the guided mode to the grating, and is thus highly effective in inducing single-mode operation even under cw operating conditions. The grating structure includes grooves etched in a plasmon-enhanced confinement layer (PECL) disposed adjacent and in contact with an upper metallic electrode. The grating structure and the PECL are designed such that in the grooves, the laser mode travelling in the waveguide can couple efficiently to the surface-plasmon at the electrode interface. This results in strong modulation of the laser mode, leading to strong modulation of, inter alia, the effective refractive index.
摘要翻译：公开了一种包含QC-DFB激光器的物品。在QC-DFB激光器中，上覆光栅结构实现了相对较强的导光模式与光栅的耦合，因此即使在cw操作条件下也可以很好地实现单模操作。光栅结构包括蚀刻在与上金属电极相邻并接触的等离子体增强约束层（PECL）中的凹槽。光栅结构和PECL被设计成使得在凹槽中，在波导中传播的激光模式可以在电极界面处有效地耦合到表面等离子体。这导致激光模式的强调制，导致特别是有效折射率的强调制。

4. 发明授权

US07382806B2 THz semiconductor laser incorporating a controlled plasmon confinement waveguide 有权
标题翻译：掺入受控等离子体限制波导的太赫兹半导体激光器
公开(公告)号：US07382806B2
公开(公告)日：2008-06-03
申请号：US10508996
申请日：2003-03-24
申请人： Alessandro Tredicucci , Fabio Beltram , Harvey Edward Beere , Alexander Giles Davies , Ruedeger Koehler , Edmund Harold Linfield
发明人： Alessandro Tredicucci , Fabio Beltram , Harvey Edward Beere , Alexander Giles Davies , Ruedeger Koehler , Edmund Harold Linfield
IPC分类号： H01S3/30
CPC分类号： B82Y20/00 , H01S5/1046 , H01S5/2054 , H01S5/22 , H01S5/3213 , H01S5/3402
摘要： A semiconductor laser comprises an active region (12) which, in response to a pumping energy applied thereto, can produce a stimulated emission of radiation with a central wavelength (λ) in the far infrared region, and a confinement region (16, 18, 22) suitable for confining the radiation in the active region (12), and comprising at least one interface (16a, 16b, 22a) between adjacent layers that is capable of supporting surface plasmon modes generated by an interaction of the interface with the radiation. The confinement region (16, 18, 22) comprises a wave-guide layer (16) which is delimited on opposite sides by a first interface and by a second interface (16a, 16b). The guide layer (16) is doped in a manner such that the first and second interfaces (16a, 16b) are capable of supporting the plasmon modes, respectively, and is of a thickness (d) such as to bring about the accumulation of the plasmon modes in proximity to the first and second interfaces (16a, 16b), outside the layer (16), and substantially a suppression of the plasmon modes, inside the layer.
摘要翻译：半导体激光器包括有源区域（12），其响应于施加到其上的泵送能量，可产生受激发射的远红外区域中具有中心波长（λ）的辐射，以及约束区域（16,18， 22），其适于将辐射限制在有源区域（12）中，并且包括相邻层之间的至少一个界面（16a，16b，22a），其能够支持通过界面与辐射。所述限制区域（16,18,22）包括波导层（16），所述波导层（16）由相对侧由第一界面和第二界面（16a，16b）限定。引导层（16）以使得第一和第二界面（16a，16b）能够分别支撑等离子体模式并且具有厚度（d）的方式被掺杂，以便产生积累在层（16）外部的第一和第二界面（16a，16b）附近的等离子体激元模式，以及基本上抑制层内的等离子体激元模式。

5. 发明授权

US06501783B1 Distributed feedback surface plasmon laser 有权
标题翻译：分布式反馈表面等离激元激光器
公开(公告)号：US06501783B1
公开(公告)日：2002-12-31
申请号：US09512566
申请日：2000-02-24
申请人： Federico Capasso , Alfred Yi Cho , Claire F. Gmachl , Albert Lee Hutchinson , Deborah Lee Sivco , Alessandro Tredicucci
发明人： Federico Capasso , Alfred Yi Cho , Claire F. Gmachl , Albert Lee Hutchinson , Deborah Lee Sivco , Alessandro Tredicucci
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/1046 , H01S5/187 , H01S5/3402
摘要： A surface plasmon laser structure is formed to include a DFB structure as the metal carrying layer, thus forming a single mode surface plasmon laser. The DFB structure comprises a multiple layer metallic surface guiding structure (for example, titanium stripes covered with a layer of gold. forming alternating Ti/Au—Au stripes). The active region, in one embodiment, may comprise a quantum cascade structure.
摘要翻译：形成表面等离子体激元结构以包括DFB结构作为金属承载层，从而形成单模表面等离子体激元。 DFB结构包括多层金属表面引导结构（例如，覆盖有金层的钛条纹，形成交替的Ti / Au-Au条纹）。在一个实施例中，有源区可以包括量子级联结构。

6. 发明授权

US06326646B1 Mounting technology for intersubband light emitters 有权
标题翻译：子带发射器的安装技术
公开(公告)号：US06326646B1
公开(公告)日：2001-12-04
申请号：US09448929
申请日：1999-11-24
申请人： James Nelson Baillargeon , Federico Capasso , Alfred Yi Cho , George Sung-Nee Chu , Claire Gmachl , Albert Lee Hutchinson , Arthur Mike Sergent , Deborah Lee Sivco , Alessandro Tredicucci
发明人： James Nelson Baillargeon , Federico Capasso , Alfred Yi Cho , George Sung-Nee Chu , Claire Gmachl , Albert Lee Hutchinson , Arthur Mike Sergent , Deborah Lee Sivco , Alessandro Tredicucci
IPC分类号： H01L3300
CPC分类号： B82Y20/00 , H01S5/0202 , H01S5/02268 , H01S5/02272 , H01S5/02469 , H01S5/0425 , H01S5/2275 , H01S5/3402
摘要： A mounting technology that increases the cw operating temperature of intersubband lasers, without increasing the risk of hot spots near the facets and short circuits near the perimeter of the laser chip, is described. In accordance with one embodiment of our invention, a method of fabricating a intersubband semiconductor laser comprises the steps of providing a single crystal semiconductor substrate, forming on the substrate an epitaxial region that includes a core region and an intersubband active region in the core region, forming front and back facets that define an optical cavity resonator, forming a metal electrode on the epitaxial region so as to provide an electrical connection to said active region, and mounting said laser on a heat sink, characterized in that the mounting step includes the steps of (i) soldering the electrode to the heat sink so that the front facet overhangs an edge of the heat sink and (ii) cleaving off the overhanging portion of the laser so as to form a new front facet that is essentially flush with the edge of said heat sink. In accordance with another embodiment, our invention is further characterized in that metal electrode to the epitaxial region is recessed from the edges of the laser chip. In accordance with yet another embodiment, our invention is further characterized in that the back facet of the laser is coated so that any solder that might tend to creep onto the back facet contacts the coating and not semiconductor material (in particular the ends of the active region).
摘要翻译：描述了增加带间激光器的cw工作温度的安装技术，而不增加靠近激光芯片周边的面和短路附近的热点的风险。根据本发明的一个实施例，一种制造子带间半导体激光器的方法包括以下步骤：提供单晶半导体衬底，在衬底上形成包含核心区域和芯区域中的子带间有源区域的外延区域，形成限定光腔谐振器的前和后刻面，在所述外延区域上形成金属电极，以提供与所述有源区域的电连接，以及将所述激光器安装在散热器上，其特征在于，所述安装步骤包括步骤（i）将电极焊接到散热器，使得前刻面突出于散热器的边缘，并且（ii）从激光器的悬垂部分分离，以形成基本上与边缘齐平的新的前刻面的所述散热器。根据另一个实施例，本发明的特征还在于，到外延区域的金属电极从激光芯片的边缘凹进。根据又一个实施例，本发明的特征还在于，激光器的后面被涂覆，使得任何可能趋于蠕变到背面上的焊料与涂层接触而不是半导体材料（特别是活性物质的端部）地区）。

7. 发明授权

US06795467B2 Technique for measuring intersubband electroluminescence in a quantum cascade laser 失效
标题翻译：在量子级联激光器中测量子带间电致发光的技术
公开(公告)号：US06795467B2
公开(公告)日：2004-09-21
申请号：US09826237
申请日：2001-04-04
申请人： Federico Capasso , Alfred Yi Cho , Raffaele Colombelli , Claire F. Gmachl , Albert Lee Hutchinson , Arthur Mike Sergent , Deborah Lee Sivco , Alessandro Tredicucci
发明人： Federico Capasso , Alfred Yi Cho , Raffaele Colombelli , Claire F. Gmachl , Albert Lee Hutchinson , Arthur Mike Sergent , Deborah Lee Sivco , Alessandro Tredicucci
IPC分类号： H01S319
CPC分类号： B82Y20/00 , H01S5/0014 , H01S5/0264 , H01S5/0683 , H01S5/1078 , H01S5/3402
摘要： The measurement of intersubband electroluminescence (ISB-EL) in unipolar quantum cascade lasers is achieved by forming a longitudinal cleave through the active region and waveguide of the QC laser device, exposing a complete side face of the device, including the active region. The conventional laser facets at the entrance and exit of the active region are coated with a highly reflective material and the emission from the exposed side face is measured. In theory, the sideface emission would comprise only the ISB-EL spontaneous emission, but some additional laser emission (due to scattering in the imperfect waveguide structure) also exits along this sideface. Spatial filtering and/or polarization monitoring can be used to differentiate the laser emission from the ISB-EL spontaneous emission.
摘要翻译：在单极量子级联激光器中的子带间电致发光（ISB-EL）的测量通过形成纵向切割通过QC激光器件的有源区和波导来实现，暴露了包括有源区的器件的完整侧面。在有源区域的入口和出口处的常规激光刻面涂覆有高反射材料，并且测量来自暴露侧面的发射。在理论上，侧面发射将仅包括ISB-EL自发发射，但是一些额外的激光发射（由于在不完美的波导结构中的散射）也沿该侧面退出。空间滤波和/或偏振监测可用于区分激光发射与ISB-EL自发发射。

8. 发明授权

US06556604B1 Flat minibands with spatially symmetric wavefunctions in intersubband superlattice light emitters 有权
标题翻译：带宽超晶格光发射器中具有空间对称波函数的平坦微型物体
公开(公告)号：US06556604B1
公开(公告)日：2003-04-29
申请号：US09708223
申请日：2000-11-08
申请人： Federico Capasso , Alfred Yi Cho , Sung-Nee George Chu , Claire F. Gmachl , Albert Lee Hutchinson , Arthur Mike Sergent , Deborah Lee Sivco , Alessandro Tredicucci , Michael Clement Wanke
发明人： Federico Capasso , Alfred Yi Cho , Sung-Nee George Chu , Claire F. Gmachl , Albert Lee Hutchinson , Arthur Mike Sergent , Deborah Lee Sivco , Alessandro Tredicucci , Michael Clement Wanke
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/3402 , H01S5/3407
摘要： The RT regions of an ISB light emitter comprise pre-biased SLs and a multiplicity of split quantum wells (SPQWs). A SPQW is a quantum well that is divided into a multiplicity of sub-wells by a first barrier layer sufficiently thin that the upper and lower energy states are split beyond their natural broadening and contribute to different minibands in each RT region. In contrast, adjacent SPQWs are coupled to one another by second barrier layers. The thicknesses of the latter layers are chosen so that minibands are created across each RT region. In one embodiment, the emitter includes an I/R region between adjacent RT regions, and in another embodiment the I/R regions are omitted.
摘要翻译： ISB光发射器的RT区域包括预偏置SL和多个分裂量子阱（SPQW）。 SPQW是通过第一势垒层被分成多个子阱的量子阱，其足够薄，使得上部和下部能量状态被分裂超出它们的自然扩宽并且有助于每个RT区域中的不同的微型物体。相反，相邻的SPQW通过第二阻挡层相互耦合。选择后一层的厚度，以便在每个RT区域上形成最小值。在一个实施例中，发射器包括相邻RT区域之间的I / R区域，在另一实施例中，I / R区域被省略。

9. 发明授权

US6091753A Article comprising an improved superlattice quantum cascade laser 失效
标题翻译：文章包括改进的超晶格量子级联激光器
公开(公告)号：US6091753A
公开(公告)日：2000-07-18
申请号：US71219
申请日：1998-05-01
申请人： Federico Capasso , Alfred Yi Cho , Jerome Faist , Claire F. Gmachl , Albert Lee Hutchinson , Deborah Lee Sivco , Alessandro Tredicucci
发明人： Federico Capasso , Alfred Yi Cho , Jerome Faist , Claire F. Gmachl , Albert Lee Hutchinson , Deborah Lee Sivco , Alessandro Tredicucci
IPC分类号： H01S5/00 , H01S5/042 , H01S5/30 , H01S5/34 , H01S5/343 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/3402 , H01S5/0421 , H01S5/305
摘要： A novel superlattice quantum cascade (SLQC) laser has undoped SL active regions, with the dopant concentration in the injector region being selected, such that, under an appropriate electrical bias, the SL active region is substantially electric field free. The absence of dopant atoms in the SL active region results in reduced carrier scattering and reduced optical losses, with consequent low threshold current and/or room temperature operation. The novel laser emits in the mid-IR spectral region and can be advantageously used in measurement or monitoring systems, e.g., in pollution monitoring systems.
摘要翻译：新型超晶格量子级联（SLQC）激光器具有未掺杂的SL活性区域，其中选择注入器区域中的掺杂剂浓度，使得在适当的电偏压下，SL有源区域基本上不含电场。在SL有源区域中不存在掺杂剂原子导致减少的载流子散射和减少的光学损耗，从而导致低阈值电流和/或室温操作。新型激光器在中红外光谱区域中发射，并且可以有利地用于测量或监测系统，例如在污染监测系统中。

10. 发明授权

US6055254A Quantum cascade light emitter with pre-biased internal electronic potential 有权
标题翻译：量子级联发光器具有预偏置内部电子电位
公开(公告)号：US6055254A
公开(公告)日：2000-04-25
申请号：US159127
申请日：1998-09-23
申请人： Federico Capasso , Alfred Yi Cho , Claire F. Gmachl , Albert Lee Hutchinson , Deborah Lee Sivco , Alessandro Tredicucci
发明人： Federico Capasso , Alfred Yi Cho , Claire F. Gmachl , Albert Lee Hutchinson , Deborah Lee Sivco , Alessandro Tredicucci
IPC分类号： H01L29/06 , H01L29/15 , H01S5/34 , H01S5/343 , H01S3/18 , H01S3/19
CPC分类号： B82Y20/00 , H01S5/3402
摘要： Instead of trying to keep the SLs of a QC laser field free, we "pre-bias" the actual electronic potential by varying the SL period (and hence average composition) so as to achieve an essentially flat profile, on average, of upper and lower minibands, despite the presence of an applied field in the SLs. In one embodiment, in at least a first subset of the QW layers, the thicknesses of the QW layers are varied from QW layer to QW layer so as to increase in the direction of the applied field. In this embodiment, the upper and lower lasing levels are located, in the absence of an applied electric field, each at different energies from layer to layer within the first subset, so that despite the presence of an applied field, the desired flatband condition of the upper and lower minibands is realized. In a preferred embodiment, the thicknesses of the QW layers within the first subset are varied from QW layer to QW layer so as to increase in the direction of the applied field, and the thicknesses of a second subset of the barrier layers are also varied from barrier layer to barrier layer so as to decrease or increase in the direction of the applied field.
摘要翻译：不要试图保持QC激光场的SL不受限制，我们通过改变SL周期（因此平均组成）来“预先偏置”实际的电子电位，以便平均地获得上部和尽管在SL中存在应用场，但是较低的迷你频段。在一个实施例中，在QW层的至少第一子集中，QW层的厚度从QW层到QW层变化，以便在施加场的方向上增加。在该实施例中，在没有所施加的电场的情况下，上和下激光电平各自处于第一子集内的层与层之间的不同能量，使得尽管存在施加的场，但是期望的平带条件实现上下两个迷你吧。在优选实施例中，第一子集内的QW层的厚度从QW层到QW层变化，以便在施加的场的方向上增加，并且阻挡层的第二子集的厚度也从阻挡层到阻挡层，以便在施加的场的方向上减小或增加。

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