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1. 发明申请

US20100320402A1 Method for Three Dimensional (3D) Lattice Radiotherapy 有权
标题翻译：三维（3D）晶格放射治疗方法
公开(公告)号：US20100320402A1
公开(公告)日：2010-12-23
申请号：US12819212
申请日：2010-06-20
申请人： Xiaodong Wu , Mansoor M. Ahmed , Alan Pollack
发明人： Xiaodong Wu , Mansoor M. Ahmed , Alan Pollack
IPC分类号： A61N5/10
CPC分类号： A61N5/1031
摘要： A method for high-dose Grid radiotherapy utilizing a three-dimensional (3D) dose lattice formation is described herein. The 3D dose lattice can be achieved by, but not limited to, three technical approaches: 1) non-coplanar focused beams; 2) multileaf collimator (MLC)-based intensity modulated radiation therapy (IMRT) or aperture-modulated arc; and 3) heavy charged particle beam. The configuration of a 3D dose lattice is comprised of the number, location, and dose of dose vertices. The optimal configuration of a 3D dose lattice can be achieved by manual calculations or by automating the calculations for a generic algorithm. The objective of the optimization algorithm is to satisfy three conditions via iteration until they reach their global minimum. With 3D dose lattice, high doses of radiation are concentrated at each lattice vertex within a tumor with drastically lower doses between vertices (peak-to-valley effect), leaving tissue outside of the tumor volume minimally exposed.
摘要翻译：本文描述了利用三维（3D）剂量格子形成的大剂量网格放射治疗方法。 3D剂量网格可以通过但不限于三种技术方法来实现：1）非共面聚焦束; 2）基于多叶准直器（MLC）的强度调制放射治疗（IMRT）或孔径调制电弧; 和3）重带电粒子束。 3D剂量网格的配置由剂量顶点的数量，位置和剂量组成。 3D剂量网格的最佳配置可以通过手动计算或通过自动化一般算法的计算来实现。优化算法的目的是通过迭代满足三个条件，直到达到其全局最小值。使用3D剂量网格，高剂量的辐射集中在肿瘤内的每个晶格顶点，顶点之间具有非常低的剂量（峰 - 谷效应），使组织在肿瘤体外的最低限度暴露。

2. 发明授权

US08395131B2 Method for three dimensional (3D) lattice radiotherapy 有权
标题翻译：三维（3D）晶格放射治疗方法
公开(公告)号：US08395131B2
公开(公告)日：2013-03-12
申请号：US12819212
申请日：2010-06-20
申请人： Xiaodong Wu , Mansoor M. Ahmed , Alan Pollack
发明人： Xiaodong Wu , Mansoor M. Ahmed , Alan Pollack
IPC分类号： A61N5/10
CPC分类号： A61N5/1031
摘要： A method for high-dose Grid radiotherapy utilizing a three-dimensional (3D) dose lattice formation is described herein. The 3D dose lattice can be achieved by, but not limited to, three technical approaches: 1) non-coplanar focused beams; 2) multileaf collimator (MLC)-based intensity modulated radiation therapy (IMRT) or aperture-modulated arc; and 3) heavy charged particle beam. The configuration of a 3D dose lattice is comprised of the number, location, and dose of dose vertices. The optimal configuration of a 3D dose lattice can be achieved by manual calculations or by automating the calculations for a generic algorithm. The objective of the optimization algorithm is to satisfy three conditions via iteration until they reach their global minimum. With 3D dose lattice, high doses of radiation are concentrated at each lattice vertex within a tumor with drastically lower doses between vertices (peak-to-valley effect), leaving tissue outside of the tumor volume minimally exposed.
摘要翻译：本文描述了利用三维（3D）剂量格子形成的大剂量网格放射治疗方法。 3D剂量网格可以通过但不限于三种技术方法来实现：1）非共面聚焦束; 2）基于多叶准直器（MLC）的强度调制放射治疗（IMRT）或孔径调制电弧; 和3）重带电粒子束。 3D剂量网格的配置由剂量顶点的数量，位置和剂量组成。 3D剂量网格的最佳配置可以通过手动计算或通过自动化一般算法的计算来实现。优化算法的目的是通过迭代满足三个条件，直到达到其全局最小值。使用3D剂量网格，高剂量的辐射集中在肿瘤内的每个晶格顶点，顶点之间具有非常低的剂量（峰 - 谷效应），使组织在肿瘤体外的最低限度暴露。

3. 发明申请

US20160256708A9 Method for Three Dimensional (3D) Lattice Radiotherapy 审中-公开
标题翻译：三维（3D）晶格放射治疗方法
公开(公告)号：US20160256708A9
公开(公告)日：2016-09-08
申请号：US13738099
申请日：2013-01-10
申请人： Xiaodong Wu , Mansoor M. Ahmed , Alan Pollack
发明人： Xiaodong Wu , Mansoor M. Ahmed , Alan Pollack
IPC分类号： A61N5/10
CPC分类号： A61N5/1031
摘要： A method for high-dose Grid radiotherapy utilizing a three-dimensional (3D) dose lattice formation is described herein. The 3D dose lattice can be achieved by, but not limited to, three technical approaches: 1) non-coplanar focused beams; 2) multileaf collimator (MLC)-based intensity modulated radiation therapy (IMRT) or aperture-modulated arc; and 3) heavy charged particle beam. The configuration of a 3D dose lattice is comprised of the number, location, and dose of dose vertices. The optimal configuration of a 3D dose lattice can be achieved by manual calculations or by automating the calculations for a generic algorithm. The objective of the optimization algorithm is to satisfy three conditions via iteration until they reach their global minimum. With 3D dose lattice, high doses of radiation are concentrated at each lattice vertex within a tumor with drastically lower doses between vertices (peak-to-valley effect), leaving tissue outside of the tumor volume minimally exposed.
摘要翻译：本文描述了利用三维（3D）剂量格子形成的大剂量网格放射治疗方法。 3D剂量网格可以通过但不限于三种技术方法来实现：1）非共面聚焦束; 2）基于多叶准直器（MLC）的强度调制放射治疗（IMRT）或孔径调制电弧; 和3）重带电粒子束。 3D剂量网格的配置由剂量顶点的数量，位置和剂量组成。 3D剂量网格的最佳配置可以通过手动计算或通过自动化一般算法的计算来实现。优化算法的目的是通过迭代满足三个条件，直到达到其全局最小值。使用3D剂量网格，高剂量的辐射集中在肿瘤内的每个晶格顶点，顶点之间具有非常低的剂量（峰 - 谷效应），使组织在肿瘤体外的最低限度暴露。

4. 发明申请

US20140194667A1 Method for Three Dimensional (3D) Lattice Radiotherapy 审中-公开
标题翻译：三维（3D）晶格放射治疗方法
公开(公告)号：US20140194667A1
公开(公告)日：2014-07-10
申请号：US13738099
申请日：2013-01-10
申请人： Xiaodong Wu , Mansoor M. Ahmed , Alan Pollack
发明人： Xiaodong Wu , Mansoor M. Ahmed , Alan Pollack
IPC分类号： A61N5/10
CPC分类号： A61N5/1031
摘要： A method for high-dose Grid radiotherapy utilizing a three-dimensional (3D) dose lattice formation is described herein. The 3D dose lattice can be achieved by, but not limited to, three technical approaches: 1) non-coplanar focused beams; 2) multileaf collimator (MLC)-based intensity modulated radiation therapy (IMRT) or aperture-modulated arc; and 3) heavy charged particle beam. The configuration of a 3D dose lattice is comprised of the number, location, and dose of dose vertices. The optimal configuration of a 3D dose lattice can be achieved by manual calculations or by automating the calculations for a generic algorithm. The objective of the optimization algorithm is to satisfy three conditions via iteration until they reach their global minimum. With 3D dose lattice, high doses of radiation are concentrated at each lattice vertex within a tumor with drastically lower doses between vertices (peak-to-valley effect), leaving tissue outside of the tumor volume minimally exposed.
摘要翻译：本文描述了利用三维（3D）剂量格子形成的大剂量网格放射治疗方法。 3D剂量网格可以通过但不限于三种技术方法来实现：1）非共面聚焦束; 2）基于多叶准直器（MLC）的强度调制放射治疗（IMRT）或孔径调制电弧; 和3）重带电粒子束。 3D剂量网格的配置由剂量顶点的数量，位置和剂量组成。 3D剂量网格的最佳配置可以通过手动计算或通过自动化一般算法的计算来实现。优化算法的目的是通过迭代满足三个条件，直到达到其全局最小值。使用3D剂量网格，高剂量的辐射集中在肿瘤内的每个晶格顶点，顶点之间具有非常低的剂量（峰 - 谷效应），使组织在肿瘤体外的最低限度暴露。

5. 发明授权

US3995303A Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector 失效
标题翻译：渐变三元III-V异质结p-n二极管光电探测器的生长和运行
公开(公告)号：US3995303A
公开(公告)日：1976-11-30
申请号：US583964
申请日：1975-06-05
申请人： Robert Edward Nahory , Thomas Perine Pearsall , Martin Alan Pollack
发明人： Robert Edward Nahory , Thomas Perine Pearsall , Martin Alan Pollack
IPC分类号： H01L31/107 , H01L31/109 , H01L27/14
CPC分类号： H01L31/109 , Y10S148/005
摘要： In an infrared photodetection apparatus a photodetector diode is used which comprises a heterojunction of two epitaxial layers of differing compositions of a ternary III-V semiconductive alloy, such that the outer layer will serve as a radiation-admitting window as well as physical protection for the underlying absorbing layer in the so called direct photodetector diode configuration. The ternary alloy illustratively includes two metallic group III elements such as indium and gallium; but the principle can be extended to ternary alloys including two group V elements, such as arsenic and antimony. Further, quaternary alloys of III-V elements can be employed. The absorbing layer is selected to be substantially intrinsic. The latter is the case for an N-type layer of In.sub.x Ga.sub.(1.sub.-x) As. Matching of this absorbing layer to a gallium arsenide substrate is achieved by a plurality of step-graded composition layers of indium gallium arsenide.
摘要翻译：在红外光电检测装置中，使用光电检测器二极管，其包括具有三元III-V半导体合金的不同组成的两个外延层的异质结，使得外层将用作辐射入口窗口以及物理保护所谓的直接光电二极管配置的底层吸收层。三元合金示例性地包括两种金属III族元素，例如铟和镓; 但原理可以扩展到三元合金，包括两种V族元素，如砷和锑。此外，可以使用III-V族元素的四元合金。吸收层被选择为基本固有的。后者是In x Ga（1-x）As的N型层的情况。这种吸收层与砷化镓衬底的匹配通过砷化铟镓的多个阶梯分级组合物层来实现。

6. 发明授权

US4032951A Growth of III-V layers containing arsenic, antimony and phosphorus, and device uses 失效
标题翻译：含有ARSENIC，抗原和磷的III-V层的生长和器件的使用
公开(公告)号：US4032951A
公开(公告)日：1977-06-28
申请号：US676556
申请日：1976-04-13
申请人： John Christian De Winter , Robert Edward Nahory , Martin Alan Pollack
发明人： John Christian De Winter , Robert Edward Nahory , Martin Alan Pollack
IPC分类号： C30B19/10 , H01L21/208 , H01L31/10 , H01L31/108 , H01L31/109 , H01L33/00 , H01L33/30 , H01S5/00 , H04B10/18 , H04B10/28
CPC分类号： H01L33/30 , C30B19/10 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02466 , H01L21/0251 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02625 , H01L21/02628 , H01L31/108 , H01L31/109 , H01L33/0025 , H04B10/2507 , H04B10/43 , Y10S438/936
摘要： Gallium arsenide antimonide phosphide (GaAsSbP) has been successfully grown on a gallium arsenide substrate by liquid phase epitaxy. A critical amount of phosphorus initially in growth solution is depleted with consequent grading of lattice constant and bandgap in the epitaxially grown layer. The substrate and graded layer as a subassembly are well suited for use in electronic devices such as double heterostructure lasers, light-emitting diodes, Schottky barrier diodes, and p-n junction photodiodes in the near-infrared low loss region of optical fibers.
摘要翻译：砷化镓锑化膦（GaAsSbP）已经通过液相外延在砷化镓衬底上成功生长。最初在生长溶液中的临界量的磷被耗尽，从而导致外延生长层中晶格常数和带隙的分级。作为子组件的衬底和梯度层非常适合用于光纤的近红外低损耗区域中的双重异质结构激光器，发光二极管，肖特基势垒二极管和p-n结光电二极管等电子器件。

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