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1. 发明授权

US3995303A Growth and operation of a step-graded ternary III-V heterojunction p-n diode photodetector 失效
标题翻译：渐变三元III-V异质结p-n二极管光电探测器的生长和运行
公开(公告)号：US3995303A
公开(公告)日：1976-11-30
申请号：US583964
申请日：1975-06-05
申请人： Robert Edward Nahory , Thomas Perine Pearsall , Martin Alan Pollack
发明人： Robert Edward Nahory , Thomas Perine Pearsall , Martin Alan Pollack
IPC分类号： H01L31/107 , H01L31/109 , H01L27/14
CPC分类号： H01L31/109 , Y10S148/005
摘要： In an infrared photodetection apparatus a photodetector diode is used which comprises a heterojunction of two epitaxial layers of differing compositions of a ternary III-V semiconductive alloy, such that the outer layer will serve as a radiation-admitting window as well as physical protection for the underlying absorbing layer in the so called direct photodetector diode configuration. The ternary alloy illustratively includes two metallic group III elements such as indium and gallium; but the principle can be extended to ternary alloys including two group V elements, such as arsenic and antimony. Further, quaternary alloys of III-V elements can be employed. The absorbing layer is selected to be substantially intrinsic. The latter is the case for an N-type layer of In.sub.x Ga.sub.(1.sub.-x) As. Matching of this absorbing layer to a gallium arsenide substrate is achieved by a plurality of step-graded composition layers of indium gallium arsenide.
摘要翻译：在红外光电检测装置中，使用光电检测器二极管，其包括具有三元III-V半导体合金的不同组成的两个外延层的异质结，使得外层将用作辐射入口窗口以及物理保护所谓的直接光电二极管配置的底层吸收层。三元合金示例性地包括两种金属III族元素，例如铟和镓; 但原理可以扩展到三元合金，包括两种V族元素，如砷和锑。此外，可以使用III-V族元素的四元合金。吸收层被选择为基本固有的。后者是In x Ga（1-x）As的N型层的情况。这种吸收层与砷化镓衬底的匹配通过砷化铟镓的多个阶梯分级组合物层来实现。

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