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    • 2. 发明申请
    • SEMICONDUCTOR MANUFACTURING APPARATUS
    • 半导体制造设备
    • US20120325796A1
    • 2012-12-27
    • US13528504
    • 2012-06-20
    • Atsushi KOBAYASHIKazuyuki MIURAAkira YASUMURO
    • Atsushi KOBAYASHIKazuyuki MIURAAkira YASUMURO
    • F27D11/00
    • H01J37/32467H01J37/32522H01J37/32532
    • A semiconductor manufacturing apparatus is capable of reducing power consumption. The semiconductor manufacturing apparatus 1 includes a processing chamber 2 that has a top surface 2a and forms a processing space S therein; a mounting table 3 provided in the processing space S; an upper electrode 20 provided above the mounting table 3 to face the mounting table 3; heaters 35 and 36 provided around the upper electrode 20 and below the top surface 2a of the processing chamber 2 and configured to heat the upper electrode 20; and a heat insulating unit 50, mounted on the top surface 2a of the processing chamber 2, having a plate-shaped member 51 and a heat insulating member 52 that is provided on one main surface 51a of the plate-shaped member 51.
    • 半导体制造装置能够降低功耗。 半导体制造装置1包括具有顶面2a并在其中形成处理空间S的处理室2; 设置在处理空间S中的安装台3; 设置在安装台3上方以面向安装台3的上部电极20; 设置在上电极20周围并位于处理室2的上表面2a的下方的加热器35和36,并被构造成加热上电极20; 以及安装在处理室2的上表面2a上的隔热单元50,其具有设置在板状构件51的一个主表面51a上的板状构件51和隔热构件52。
    • 3. 发明申请
    • Gas treatment device and heat readiting method
    • 气体处理装置和热读取方法
    • US20070022954A1
    • 2007-02-01
    • US10570603
    • 2004-08-30
    • Hachishiro IizukaKoichiro KimuraKyoko IkedaTomoyuki SakodaAkira Yasumuro
    • Hachishiro IizukaKoichiro KimuraKyoko IkedaTomoyuki SakodaAkira Yasumuro
    • C23F1/00C23C16/00
    • C23C16/45565C23C16/455
    • A shower head formed by stacking a shower base, a gas diffusion plate, and a shower plate and supplying material gas and oxidizer gas to a wafer on a loading table through a first gas diffusion part and a second gas diffusion part formed in both faces of the gas diffusion plate, first gas outlets formed in the shower plate and communicating with a first gas diffusion space, and second gas outlets formed in the shower plate and communicating with a second gas diffusion space. A plurality of heat transfer columns fitted closely to the lower surface of the shower base are installed in the first gas diffusion part so that portions therebetween can form the first gas diffusion space, and radiant heat from the loading table is transmitted by the heat transfer columns in the thickness direction of the shower head.
    • 喷淋头,其通过堆叠淋浴器基座,气体扩散板和喷淋板而形成,并且通过第一气体扩散部和第二气体扩散部将第二气体扩散部和第二气体扩散部供给到装载台上的晶片, 所述气体扩散板,形成在所述喷淋板中并与第一气体扩散空间连通的第一气体出口和形成在所述喷淋板中并与第二气体扩散空间连通的第二气体出口。 在第一气体扩散部中安装有与淋浴器基座的下表面紧密配合的多个传热塔,使得它们之间的部分可以形成第一气体扩散空间,并且来自装载台的辐射热量通过传热塔 在淋浴头的厚度方向上。
    • 5. 发明申请
    • Film Forming Apparatus and Vaporizer
    • 成膜装置和蒸发器
    • US20070266944A1
    • 2007-11-22
    • US11660091
    • 2005-08-12
    • Hachishiro IizukaAkira YasumuroKoichiro KimuraNorihiko Tsuji
    • Hachishiro IizukaAkira YasumuroKoichiro KimuraNorihiko Tsuji
    • C23C16/02
    • C23C16/4402C23C16/4401C23C16/4486C23C16/45561C23C16/4585
    • A film forming apparatus including a raw material supplying section for supplying a raw material of a liquid or a gas-liquid mixture, a raw material vaporizing section for vaporizing the raw material to form a raw material gas, and a film forming section for conducting a film forming treatment using the formed raw material gas, and a filter on the transport path for the raw material gas from the raw material vaporizing section to the film forming section. An outer edge of the filter is pressed to the inner surface of the transport path over the whole perimeter thereof by a cyclic supporting member, which is less prone to be deformed by a loading in the pressing direction than the outer edge, and is fixed to the inner surface of the transport path in a compressed state between the inner surface of the transport path and the supporting member.
    • 一种成膜装置,包括用于供给液体或气液混合物的原料的原料供给部,用于蒸发原料以形成原料气体的原料蒸发部,以及用于导入 使用所形成的原料气体的成膜处理,以及从原料蒸发部到成膜部的原料气体的输送路径上的过滤器。 过滤器的外边缘通过循环支撑构件在其整个周边上被压靠在输送路径的内表面上,循环支撑构件通过沿着挤压方向的加载不如外边缘而变形,并被固定到 传送路径的内表面处于压缩状态,在传送路径的内表面和支撑构件之间。