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1. 外观设计

USD433492S Air conditioner 失效
公开(公告)号：USD433492S
公开(公告)日：2000-11-07
申请号：US118048
申请日：2000-02-03
申请人： Hiroshi Oya , Yoshimi Okamoto , Hiroya Ishigaki , Toru Fujisawa , Hideki Oba , Akira Otsuki
设计人： Hiroshi Oya , Yoshimi Okamoto , Hiroya Ishigaki , Toru Fujisawa , Hideki Oba , Akira Otsuki

2. 发明授权

US5512942A Anomaly surveillance device 失效
标题翻译：异常监控装置
公开(公告)号：US5512942A
公开(公告)日：1996-04-30
申请号：US135618
申请日：1993-10-14
申请人： Akira Otsuki
发明人： Akira Otsuki
IPC分类号： H04N7/18 , G06T1/00 , G06T1/60 , G08B13/194
CPC分类号： G08B13/19602 , G08B13/19669 , G08B13/19676
摘要： An image signal which is output by a video camera is segregated into image data S2 and synchronous data S3 by the synchronizing segregation circuit 1. At each frame, image data S2 is sequentially stored in the image data multilayer memory 8 which consists of frame memories formed in a ring shape. When an anomalous phenomena which includes this image data S2 is detected by the anomalous phenomena detecting device 2, then for image data S2 and anomalous image data S4, from a time immediately before the occurrence of an anomalous phenomena until the elapse of a prespecified period of time, maintenance and storage in the multilayer memory 8 for image data and in the multilayer memory 7 for extracted anomalous image data by the start/stop control circuit 6. Following this, the image data S2 and the anomalous image data S4 from immediately before the occurrence of an anomalous phenomena until the elapse of a prespecified period of time is forwarded to storage device 10 by the data transfer circuit 9. Based on the thus obtained images from before and after the occurrence of an anomalous phenomena, analysis and resolution of an anomalous phenomena occurring within a surveilled area may be carried out.
摘要翻译：由摄像机输出的图像信号通过同步分离电路1分离成图像数据S2和同步数据S3.在每个帧处，图像数据S2顺序地存储在形成的帧存储器的图像数据多层存储器8中环形。当由异常现象检测装置2检测到包含该图像数据S2的异常现象时，则对于图像数据S2和异常图像数据S4，从发生异常现象直到经过预定指定期间时间，维护和存储在用于图像数据的多层存储器8中以及在多层存储器7中，用于由启动/停止控制电路6提取的异常图像数据。之后，图像数据S2和异常图像数据S4 通过数据传输电路9将经过预定时间段的异常现象的发生转发到存储装置10.基于如此获得的异常现象之前和之后的图像，分析和解决异常现象可以执行在监视区域内发生的现象。

3. 发明授权

US4805044A Idler gear cut-off mechanism for a cassette tape recorder 失效
标题翻译：磁带录音机的惰轮减速机构
公开(公告)号：US4805044A
公开(公告)日：1989-02-14
申请号：US75226
申请日：1987-07-20
申请人： Akira Otsuki
发明人： Akira Otsuki
IPC分类号： G11B15/10 , G11B15/18 , G11B15/44 , G11B15/675 , G11B5/54 , G11B15/00
CPC分类号： G11B15/103 , G11B15/1883 , G11B15/442 , G11B15/67557
摘要： A cassette type tape recorder comprises a magnetic head for recording on and reproducing from a magnetic tape in a tape cassette, a drive gear, a head displacing cam mechanism for changing-over the position of the magnetic head between its play and non-play positions, an idler for driving the head displacing cam mechanism by drive power transmitted from the drive gear, a cut-off gear movable and engageable with the drive gear and the idler, the cut-off gear being arranged to cut off the drive power transmission from the drive gear to the idler when the cut-off gear is in a cut-off position, and a cut-off gear displacing cam mechanism for displacing the cut-off gear to said the cut-off position when the magnetic head is brought into its play position by the head displacing cam mechanism.
摘要翻译：盒式磁带录像机包括用于在磁带盒中的磁带上记录和再现的磁头，驱动齿轮，用于在其播放位置和非播放位置之间切换磁头的位置的磁头移动凸轮机构用于通过从所述驱动齿轮传递的驱动力来驱动所述头部位移凸轮机构的惰轮，能够与所述驱动齿轮和所述惰轮啮合的切断齿轮，所述切断齿轮被布置成从所述驱动齿轮当所述切断齿轮处于切断位置时，所述驱动齿轮到所述惰轮，以及切断齿轮位移凸轮机构，用于当所述磁头进入时将所述切断齿轮移位到所述切断位置其位置通过头部移位凸轮机构。

4. 发明授权

US4199622A Coating compositions for use in coating can insides and a method for applying the same 失效
标题翻译：用于涂层的涂料组合物可以内部和其应用方法
公开(公告)号：US4199622A
公开(公告)日：1980-04-22
申请号：US696252
申请日：1976-06-15
申请人： Jun Kokumai , Akira Otsuki , Tadashi Ishibashi
发明人： Jun Kokumai , Akira Otsuki , Tadashi Ishibashi
IPC分类号： A47J36/02 , B05D7/22 , C09D151/06
CPC分类号： C09D151/06 , A47J36/02 , B05D7/227
摘要： Coating compositions for use in coating can insides which consist essentially of a polar group-containing polyolefin and at least one solvent for the polyolefin, the polyolefin being dispersed in the solid particulate form in the solvent; and a method for applying the same.
摘要翻译：用于涂布的涂料组合物可以包含基本上由含极性基团的聚烯烃和用于聚烯烃的至少一种溶剂组成的内部，聚烯烃以固体颗粒形式分散在溶剂中; 及其应用方法。

5. 发明申请

US20110158856A1 PROCESS FOR PRODUCTION OF AMPHOTERIC ELECTROLYTE RESIN BY CONTINUOUS BULK POLYMERIZATION AND APPARATUS FOR THE PRODUCTION 有权
标题翻译：连续生产聚氨酯电解质树脂的方法及生产方法
公开(公告)号：US20110158856A1
公开(公告)日：2011-06-30
申请号：US12980734
申请日：2010-12-29
申请人： Takashi SUNAMORI , Akira Otsuki , Akihiko Itaya
发明人： Takashi SUNAMORI , Akira Otsuki , Akihiko Itaya
IPC分类号： B01J19/18
CPC分类号： C08F2/01 , C08F2/02 , C08F220/06 , C08F220/18 , C08F220/34 , C08F212/08 , C08F2220/1825 , C08F220/14 , C08F218/08 , C08F220/20 , C08F2220/1858
摘要： A continuous polymerization apparatus is provided for producing an amphoteric electrolyte resin by continuous bulk polymerization at low cost, which apparatus includes a reaction vessel, the reaction vessel including at least four polymerization zones adjacent to each other in series, each polymerization zone being separated by a partition plate, the partition plates admitting a stirring shaft with stirrers, each of the polymerization zones having a thermosensor for sensing temperature within the polymerization zone, a heating device for heating the polymerization zone and a cooling device for cooling the polymerization zone.
摘要翻译：提供一种连续聚合装置，用于以低成本连续本体聚合制造两性电解质树脂，该装置包括反应容器，反应容器包括至少四个彼此相邻的聚合区域，每个聚合区域被一个隔板用搅拌器接纳搅拌轴，每个聚合区具有用于感测聚合区内的温度的热敏传感器，用于加热聚合区的加热装置和用于冷却聚合区的冷却装置。

6. 发明申请

US20090131610A1 Process for Production of Amphoteric Electrolyte Resin by Continuous Bulk Polymerization and Apparatus for the Production 有权
标题翻译：通过连续体积聚合生产两性电解质树脂的方法和生产设备
公开(公告)号：US20090131610A1
公开(公告)日：2009-05-21
申请号：US11887186
申请日：2005-03-28
申请人： Takashi Sunamori , Akira Otsuki , Akihiko Itaya
发明人： Takashi Sunamori , Akira Otsuki , Akihiko Itaya
IPC分类号： C08F2/01 , B01J19/00
CPC分类号： C08F2/01 , C08F2/02 , C08F220/06 , C08F220/18 , C08F220/34 , C08F212/08 , C08F2220/1825 , C08F220/14 , C08F218/08 , C08F220/20 , C08F2220/1858
摘要： A process for producing an amphoteric electrolyte resin by continuous bulk polymerization at low cost is provided. Also provided is an apparatus for achieving the process. The process comprises the steps of: feeding, from the mixture supply side, a mixture comprising 0.01 to 10 wt % of at least one radically polymerizable basic monomer containing a nitrogen atom, 0.01 to 35 wt % of at least one radically polymerizable acidic monomer having a carboxyl group and 45 to 99.98 wt % of a monomer capable of copolymerizing with these monomers or a mixture of the mixture and a polymerization initiator and/or an organic solvent having a boiling point of 80° C. or higher in an amount of 10 wt % or less relative to the total weight of the monomers, into a reaction zone composed of four polymerization zones which independently provide mixture temperatures of T1, T2, T3 and T4, respectively; and then passing the mixture through the reaction zone continuously while agitating so that the residence time in each polymerization zone becomes 5 to 20 minutes, provided that T1, T2, T3 and T4 satisfy the following requirements: T1=50 to 160° C., T2=70 to 190° C., T3=70 to 250° C., T4=70 to 270° C., and T1
摘要翻译：提供了以低成本连续本体聚合制造两性电解质树脂的方法。还提供了一种用于实现该过程的装置。该方法包括以下步骤：从混合物供应侧进料包含0.01至10重量％的至少一种含有氮原子的可自由基聚合的碱性单体的混合物，0.01至35重量％的至少一种可自由基聚合的酸性单体，其具有羧基和45至99.98重量％的能够与这些单体共聚的单体或混合物与聚合引发剂和/或沸点为80℃或更高的有机溶剂的混合物的量为10 重量％以下，分别由分别独立地提供T1，T2，T3和T4的混合温度的四个聚合区组成的反应区; 然后在搅拌的同时使混合物连续通过反应区，使得每个聚合区域的停留时间为5〜20分钟，条件是T1，T2，T3和T4满足以下要求：T1 = 50〜160℃， T2 = 70〜190℃，T3 = 70〜250℃，T4 = 70〜270℃，T1

7. 外观设计

USD453957S1 Air conditioner 失效
标题翻译：冷气机
公开(公告)号：USD453957S1
公开(公告)日：2002-02-26
申请号：US29142736
申请日：2001-05-31
申请人： Hiroshi Oya , Yoshimi Okamoto , Toru Fujisawa , Hideki Oba , Akira Otsuki
设计人： Hiroshi Oya , Yoshimi Okamoto , Toru Fujisawa , Hideki Oba , Akira Otsuki

8. 外观设计

USD451586S1 Air conditioner 失效
公开(公告)号：USD451586S1
公开(公告)日：2001-12-04
申请号：US29130222
申请日：2000-09-28
申请人： Hiroshi Oya , Yoshimi Okamoto , Akira Otsuki , Toru Fujisawa , Hideki Oba
设计人： Hiroshi Oya , Yoshimi Okamoto , Akira Otsuki , Toru Fujisawa , Hideki Oba

9. 发明授权

US6033976A Ohmic electrode, its fabricating method and semiconductor device 失效
标题翻译：欧姆电极，其制造方法和半导体器件
公开(公告)号：US6033976A
公开(公告)日：2000-03-07
申请号：US852923
申请日：1997-05-08
申请人： Masanori Murakami , Takeo Oku , Akira Otsuki
发明人： Masanori Murakami , Takeo Oku , Akira Otsuki
IPC分类号： H01L21/28 , H01L21/285 , H01L29/45 , H01L21/441
CPC分类号： H01L21/28575 , H01L29/452
摘要： It is intended to realize an ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics. Provided on an n.sup.+ -type GaAs substrate is an ohmic electrode in which an n.sup.++ -type regrown GaAs layer regrown from the n.sup.+ -type GaAs substrate and a NiGe film containing precipitates composed of .alpha.'-AuGa are sequentially stacked. The ohmic electrode may be fabricated by sequentially stacking a Ni film, Au film and Ge film on the n.sup.+ -type GaAs substrate, then patterning these films by, for example, lift-off, and thereafter annealing the structure at a temperature of 400.about.750.degree. C. for several seconds to several minutes.
摘要翻译：旨在实现具有实际令人满意的特性的诸如GaAs半导体的III-V化合物半导体的欧姆电极。在n +型GaAs衬底上提供的是欧姆电极，其中从n +型GaAs衬底重新生长n ++型再生长GaAs层，并且依次层叠含有由α'-AuGa组成的析出物的NiGe膜。可以通过在n +型GaAs衬底上依次层叠Ni膜，Au膜和Ge膜，然后通过例如剥离来对这些膜进行图案化，然后在400DIFFERENCE的温度下对结构进行退火来制造欧姆电极 750℃，数秒至数分钟。

10. 发明授权

US5982036A Multi-layered structure for ohmic electrode fabrication 失效
标题翻译：用于欧姆电极制造的多层结构
公开(公告)号：US5982036A
公开(公告)日：1999-11-09
申请号：US979413
申请日：1997-11-26
申请人： Chihiro Uchibori , Masanori Murakami , Akira Otsuki , Takeo Oku , Masaru Wada
发明人： Chihiro Uchibori , Masanori Murakami , Akira Otsuki , Takeo Oku , Masaru Wada
IPC分类号： H01L21/28 , H01L21/203 , H01L21/265 , H01L21/285 , H01L21/337 , H01L21/338 , H01L29/08 , H01L29/45 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L29/66924 , H01L21/28575 , H01L21/28581 , H01L29/0891 , H01L29/452 , H01L29/66878
摘要： An ohmic electrode for III-V compound semiconductors such as GaAs semiconductors which has practically satisfactory characteristics is disclosed. A non-single crystal InAs layer, Ni film, WSi film and W film are sequentially deposited on an n.sup.+ -type GaAs substrate by sputtering, etc. and subsequently patterned by lift-off, etc. to make a multi-layered structure for fabricating ohmic electrodes. The structure is then annealed first at, e.g. 300.degree. C. for 30 minutes and next at, e.g. 650.degree. C. for one second to fabricate an ohmic electrode.
摘要翻译：公开了具有实际令人满意的特性的诸如GaAs半导体的III-V族化合物半导体的欧姆电极。通过溅射等将非单晶InAs层，Ni膜，WSi膜和W膜依次沉积在n +型GaAs衬底上，随后通过剥离等进行图案化，以制造用于制造的多层结构欧姆电极。然后首先将结构退火，例如。 300℃，30分钟，然后在例如 650℃下制造欧姆电极1秒钟。

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