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    • 2. 发明授权
    • Electrically programmable memory and method of programming
    • 电可编程存储器和编程方法
    • US6101125A
    • 2000-08-08
    • US82213
    • 1998-05-20
    • Alistair James Gorman
    • Alistair James Gorman
    • G11C11/56G11C16/10G11C16/24G11C16/34G11C16/04
    • G11C16/3459G11C11/5621G11C11/5628G11C16/10G11C16/24G11C16/3454G11C2211/5621
    • An electrically programmable memory having floating gate FET cells (10.2) each having a drain electrode (10.10), and a source electrode (10.8); a first voltage source for applying simultaneously to one of the drain and source electrodes of a plurality of cells of the memory a first voltage (AGND)for a programming time, the first voltage being selectable so as to determine the multi-level value programmed into the cell, thereby allowing simultaneous multi-level programming of the plurality of cells; a voltage pluse source for applying to the other of the drain and source electrodes of the plurality of cells a succession of voltage pulses (Vpp) during the programming time; and a programming determiner for determining after each of the succession of the voltage pulses whether the cell is programmed to a desired value.
    • 一种电可编程存储器,具有分别具有漏电极(10.10)和源电极(10.8)的浮置FET FET单元(10.2)。 第一电压源,用于同时施加存储器的多个单元的漏极和源极之一用于编程时间的第一电压(AGND),所述第一电压是可选择的,以便确定被编程为 从而允许多个小区的同时多级编程; 用于在编程时间期间向多个单元的另一个漏极和源极施加一系列电压脉冲(Vpp)的电压源; 以及编程确定器,用于在所述一连串电压脉冲中的每一个之后确定所述单元是否被编程为期望值。