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1. 发明申请

US20030056715A1 Silicon semiconductor substrate and preparation thereof 有权
标题翻译：硅半导体衬底及其制备
公开(公告)号：US20030056715A1
公开(公告)日：2003-03-27
申请号：US10236273
申请日：2002-09-06
申请人： Wacker Siltronic Gesellschaft Fur Halbleitermaterialien AG
发明人： Akiyoshi Tachikawa , Atsushi Ikari
IPC分类号： C30B015/00 , C30B021/06 , C30B027/02 , C30B028/10 , C30B030/04
CPC分类号： C30B29/06 , C30B15/206 , C30B33/00 , Y10T428/12674
摘要： A silicon semiconductor substrate has a structure possessing oxygen precipitate defects fated to form gettering sites in a high density directly below the defect-free region of void type crystals. The silicon semiconductor substrate is formed by heat-treating a silicon semiconductor substrate derived from a silicon single crystal grown by the Czochralski method or the magnetic field-applied Czochralski method and characterized by satisfying the relational expression (Oi DZ)null(COP DZ)null10 nullm wherein Oi DZ denotes a defect-free zone of oxygen precipitate crystal defects and COP DZ denotes a region devoid of a void type defect measuring not less than 0.11 nullm in size, and having not less than 5null108 oxygen precipitate crystal defects per cm3. The method for making the substrate comprises the steps of deriving a silicon semiconductor substrate from a silicon single crystal grown by the Czochralski method or the magnetic field-applied Czochralski method using molten silicon containing not less than 5null1017 atoms and not more than 1.5null1019 atoms of nitrogen per cm3 and heat-treating the silicon semiconductor substrate in a non-oxidizing atmosphere at a highest final temperature of not lower than 1150null C. for not less than one hour.
摘要翻译：硅半导体衬底具有具有氧沉淀缺陷的结构，以形成直接位于空隙型晶体的无缺陷区域的高密度的吸气位点。硅半导体衬底通过对由Czochralski法生长的硅单晶衍生的硅半导体衬底或施加磁场的Czochralski法进行热处理而形成，其特征在于满足关系式（Oi DZ） - （COP DZ） =10μm，其中Oi DZ表示氧沉淀晶体缺陷的无缺陷区域，COP DZ表示没有测量尺寸不小于0.11μm的空隙型缺陷的区域，并且具有不小于5×10 8个氧沉淀物晶体缺陷/ cm3 。制造衬底的方法包括以下步骤：通过使用含有不少于5×10 17原子且不大于1.5×10 19原子的熔融硅从Czochralski法生长的硅单晶或使用磁场施加的Czochralski法得到硅半导体衬底氮气/ cm3，并在非氧化性气氛中在不低于1150℃的最高最终温度下热处理硅半导体衬底不少于1小时。

2. 发明申请

US20030054650A1 Process for material-removing machining of both sides of semiconductor wafers 有权
标题翻译：用于半导体晶片两侧材料去除加工的工艺
公开(公告)号：US20030054650A1
公开(公告)日：2003-03-20
申请号：US10174139
申请日：2002-06-18
申请人： WACKER SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN AG
发明人： Guido Wenski , Thomas Altmann , Gerhard Heier , Wolfgang Winkler , Gunther Kann
IPC分类号： H01L021/461
CPC分类号： H01L21/02024 , B24B17/10 , B24B37/08
摘要： A process is for material-removing machining, on both sides simultaneously, of semiconductor wafers having a front surface and a back surface, the semiconductor wafers resting in carriers which are set in rotation by means of an annular outer drive ring and an annular inner drive ring and being moved between two oppositely rotating working disks in a manner which can be described by means of in each case one path curve relative to the upper working disk and one path curve relative to the lower working disk, wherein the two path curves after six loops around the center have the appearance of still being open, and at each point have a radius of curvature which is at least as great as the radius of the inner drive ring.
摘要翻译：一种方法是在半导体晶片具有前表面和后表面的同时在两面同时进行材料去除加工，半导体晶片位于载体中，该载体通过环形外驱动环和环形内驱动在两个相对旋转的工作盘之间移动，可以通过在每种情况下通过相对于上工作盘的一个路径曲线和相对于下工作盘的一个路径曲线来描述，其中在六个之后的两个路径曲线围绕中心的环路具有仍然是开放的外观，并且在每个点处具有至少与内部驱动环的半径一样大的曲率半径。

3. 发明申请

US20030045089A1 Semiconductor wafer with improved flatness, and process for producing the semiconductor wafer 有权
公开(公告)号：US20030045089A1
公开(公告)日：2003-03-06
申请号：US10218006
申请日：2002-08-13
申请人： Wacker Siltronic Gesellschaft Fur Halbleitermaterialien AG
发明人： Guido Wenski , Thomas Altmann , Ernst Feuchtinger , Willibald Bernwinkler , Wolfgang Winkler , Gerhard Heier
IPC分类号： H01L021/4763
CPC分类号： H01L21/02024 , B24B37/042 , B24B37/08
摘要： A semiconductor wafer has a front surface and a back surface and flatness values based on partial areas of a surface grid on the front surface of the semiconductor wafer, which has a maximum local flatness value SFQRmax of less than or equal to 0.13 nullm and individual SFQR values which in a peripheral area of the semiconductor wafer do not differ significantly from those in a central area of the semiconductor wafer. There is also a process for producing this semiconductor wafer, wherein the starting thickness of the semiconductor wafer is 20 to 200 nullm greater than the thickness of the carrier and the semiconductor wafer is polished until the end thickness of the semiconductor wafer is 2 to 20 nullm greater than the thickness of the carrier.

4. 发明申请

US20030034110A1 Method and device for producing an adhesive-bonded connection between a semiconductor wafer and a carrier plate 审中-公开
标题翻译：用于在半导体晶片和载体板之间制造粘结剂连接的方法和装置
公开(公告)号：US20030034110A1
公开(公告)日：2003-02-20
申请号：US10213522
申请日：2002-08-07
申请人： Wacker Siltronic Gesellschaft fur Halbleitermaterialien AG
发明人： Thomas Hubel , Hubert Danner , Armin Mauler , Klaus Rottger
IPC分类号： B32B031/00
CPC分类号： B32B37/003 , B32B37/12 , B32B38/1866 , B32B2457/14 , Y10T156/10
摘要： A method and device for producing an adhesive-bonded join between a semiconductor wafer and a carrier plate, the semiconductor wafer being held at a distance above the carrier plate and being convexly deformed by an elastic wall of an inflatable pressure chamber, then being laid onto the carrier plate, enclosing an adhesive substance, and is joined in a nonpositively locking manner to the carrier plate. An edge region of the semiconductor wafer is sucked up and held above the carrier plate, the suction is ended and the semiconductor wafer is allowed to drop in a convexly deformed state onto the carrier plate, and only a central area of the semiconductor wafer is pressed onto the carrier plate by the elastic wall of the pressure chamber.
摘要翻译：一种用于在半导体晶片和载体板之间制造粘合剂的连接的方法和装置，所述半导体晶片被保持在承载板上方一段距离处，并且由可膨胀的压力室的弹性壁凸出地变形，然后被放置在载体板，包封粘合剂物质，并以非积极锁定方式连接到载体板上。将半导体晶片的边缘区域吸引并保持在承载板的上方，吸引结束，使半导体晶片以凸形变形状态下降到载板上，仅半导体晶片的中心区域被按压通过压力室的弹性壁到载体板上。

5. 发明申请

US20020115387A1 Double-side polishing process with reduced scratch rate and device for carrying out the process 有权
标题翻译：减少划伤率的双面抛光工艺和进行该工艺的装置
公开(公告)号：US20020115387A1
公开(公告)日：2002-08-22
申请号：US09989550
申请日：2001-11-20
申请人： WACKER SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN AG
发明人： Guido Wenski , Johann Glas , Thomas Altmann , Gerhard Heier
IPC分类号： B24B001/00 , B24B007/19 , B24B007/30 , B24B005/00 , B24B029/00
CPC分类号： H01L21/02024 , B24B37/0056 , B24B37/08
摘要： A process for producing semiconductor wafers by double-sided polishing between two rotating, upper and lower polishing plates, which are covered with polishing cloth, while an alkaline polishing abrasive with colloidal solid fractions is being supplied, the semiconductor wafers being guided by carriers which have circumferential gear teeth and are set in rotation by complementary outer gear teeth and inner gear teeth of the polishing machine, which is distinguished by the following process steps: (a) at least one of the two sets of gear teeth of the polishing machine is at least from time to time sprayed with a liquid which substantially comprises water, (b) the alkaline polishing abrasive is fed continuously to the semiconductor wafers in a closed supply device. There is also a device which is suitable for carrying out the process.
摘要翻译：在提供具有胶体固体部分的碱性抛光磨料的同时，在被抛光布覆盖的两个旋转，上和下抛光板之间通过双面抛光来生产半导体晶片的方法，半导体晶片由具有周向齿轮齿，并由抛光机的互补外齿轮齿和内齿轮齿旋转，其特征在于以下工艺步骤：（a）抛光机的两组齿轮齿中的至少一个处于至少不时地用基本上包含水的液体喷雾，（b）碱性抛光磨料在封闭的供应装置中连续地供给到半导体晶片。还有一种适用于执行该过程的装置。

6. 发明申请

US20020077039A1 Process for the surface polishing of silicon wafers 有权
标题翻译：硅片表面抛光工艺
公开(公告)号：US20020077039A1
公开(公告)日：2002-06-20
申请号：US10021515
申请日：2001-10-30
申请人： WACKER, SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN AG
发明人： Guido Wenski , Thomas Buschhardt , Heinrich Hennhofer , Bruno Lichtenegger
IPC分类号： B24B001/00
CPC分类号： H01L21/02024
摘要： A process for the surface polishing of a silicon wafer, includes the successive polishing of the silicon wafer on at least two different polishing plates covered with polishing cloth, with a continuous supply of alkaline polishing abrasive with SiO2 constituents, an amount of silicon removed during the polishing on a first polishing plate being significantly higher than on a second polishing plate, with the overall amount of silicon removed not exceeding 1.5 nullm. A polishing abrasive (1a), then a mixture of a polishing abrasive (1b) and at least one alcohol, and finally ultrapure water (1c) are added to the first polishing plate, and a mixture of a polishing abrasive (2a) and at least one alcohol and then ultrapure water (2b) are added to the second plate.
摘要翻译：用于硅晶片的表面抛光的方法包括在被抛光布覆盖的至少两个不同抛光板上的硅晶片的连续抛光，连续供应具有SiO 2成分的碱性抛光磨料，在在第一抛光板上的抛光显着高于第二抛光板，其中硅的总量不超过1.5μm。然后将抛光研磨剂（1a），然后将抛光磨料（1b）和至少一种醇，最后是超纯水（1c）的混合物加入到第一研磨板中，并将抛光磨料（2a）和至少一种醇，然后将超纯水（2b）加入到第二板中。

7. 发明授权

US6153008A Device and method for pulling a single crystal 失效
标题翻译：拉单晶的装置和方法
公开(公告)号：US6153008A
公开(公告)日：2000-11-28
申请号：US045348
申请日：1998-03-20
申请人： Wilfried Von Ammon , Hans Olkrug , Erich Dornberger , Franz Segieth
发明人： Wilfried Von Ammon , Hans Olkrug , Erich Dornberger , Franz Segieth
IPC分类号： C30B15/30 , C30B15/00 , C30B15/14 , C30B15/20 , C30B29/06 , H01L21/208 , C30B15/22
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , Y10T117/1068
摘要： Device for pulling a silicon single crystal 1 includes an element 5 which annularly surrounds the single crystal growing at a crystallization boundary; and the element has a face 6 directed at the single crystal. The element surrounds the single crystal substantially level with the crystallization boundary 2 and has the property of reflecting heat radiation radiated by the single crystal and the similar melt or of generating and radiating heat radiation back to the lower part of the crystal close to the crystallization boundary. There is also a method for pulling a silicon single crystal, in which the single crystal is thermally affected using the element surrounding it.
摘要翻译：用于拉制硅单晶1的装置包括环状围绕在结晶边界处生长的单晶的元件5; 并且元件具有针对单晶的面6。该元件以结晶边界2围绕单晶大致水平，并且具有反射由单晶和类似熔体辐射的热辐射的特性，或者产生和辐射热辐射回到结晶边界附近的晶体的下部。还有一种拉制单晶的方法，其中使用周围的元素对单晶进行热影响。

8. 发明授权

US6117230A Process for producing a silicon single crystal, and heater for carrying out the process 失效
标题翻译：硅单晶的制造方法，以及用于进行该工艺的加热器
公开(公告)号：US6117230A
公开(公告)日：2000-09-12
申请号：US977584
申请日：1997-11-25
申请人： Wilfried Von Ammon , Erich Tomzig , Paul Fuchs , Yuri Gelfgat
发明人： Wilfried Von Ammon , Erich Tomzig , Paul Fuchs , Yuri Gelfgat
IPC分类号： H05B6/18 , C30B15/00 , C30B15/14 , C30B29/06 , H05B6/02 , H05B6/24
CPC分类号： C30B29/06 , C30B15/14 , H05B6/02 , H05B6/24 , Y10T117/1068
摘要： A process for producing a silicon single crystal by the Czochralski method, utilizes a heater which is intended for heating a silicon-filled crucible and is arranged below the crucible. The process has energy delivered to the melt at least some of the time inductively using a coiled heater arranged under the crucible. The heater is in the form of a wound coil.
摘要翻译：通过切克劳斯基法生产硅单晶的方法利用了用于加热填充硅的坩埚并设置在坩埚下方的加热器。该方法在至少一些时间内使用布置在坩埚下方的盘绕加热器感应地将能量传送到熔体。加热器是卷绕线圈的形式。

9. 发明授权

US6046117A Process for etching semiconductor wafers 失效
标题翻译：蚀刻半导体晶片的工艺
公开(公告)号：US6046117A
公开(公告)日：2000-04-04
申请号：US82865
申请日：1998-05-21
申请人： Theresia Bauer , Susanne Weizbauer , Hanns Wochner , Alfred Bergler
发明人： Theresia Bauer , Susanne Weizbauer , Hanns Wochner , Alfred Bergler
IPC分类号： H01L21/306 , H01L21/308
CPC分类号： H01L21/02019 , H01L21/30604 , Y02P80/30 , Y10S438/974
摘要： A process is taught for etching semiconductor wafers with an etching mixture comprising nitric and hydrofluoric acids and optionally a surfactant. To this mixture are added either more hydrofluoric acid, or more hydrofluoric and nitric acids, with the added acids having concentrations of at least 70% by weight. The use of concentrated acids reduces the loss of substrate material and extends etching bath life.
摘要翻译：教导了用包括硝酸和氢氟酸以及任选的表面活性剂的蚀刻混合物蚀刻半导体晶片的方法。向该混合物中加入更多的氢氟酸或更多的氢氟酸和硝酸，加入的酸的浓度至少为70重量％。浓缩酸的使用减少了底物的损失，延长了蚀刻液的使用寿命。

10. 发明申请

US20020174861A1 Method for cutting slices from a workpiece 有权
标题翻译：从工件切割切片的方法
公开(公告)号：US20020174861A1
公开(公告)日：2002-11-28
申请号：US10139210
申请日：2002-05-03
申请人： WACKER SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN AG
发明人： Holger Lundt , Lothar Huber , Peter Wiesner
IPC分类号： B28D007/02 , B28D001/08
CPC分类号： B28D5/0076 , B28D5/0064
摘要： A method for cutting up a workpiece which is in rod or block form by means of a saw, wherein the temperature of the workpiece is measured during the cutting, and the measurement signal is transmitted to a control unit, which generates a control signal which is used to control the temperature of the workpiece, or wherein the temperature of the workpiece is controlled during the cutting by a control signal based on a predetermined control curve.
摘要翻译：一种通过锯切成棒状或块状的工件的方法，其中在切割期间测量工件的温度，并将测量信号传送到控制单元，该控制单元产生控制信号，该控制信号是用于控制工件的温度，或者其中通过基于预定控制曲线的控制信号在切割期间控制工件的温度。

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