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1. 发明申请

US20030054650A1 Process for material-removing machining of both sides of semiconductor wafers 有权
标题翻译：用于半导体晶片两侧材料去除加工的工艺
公开(公告)号：US20030054650A1
公开(公告)日：2003-03-20
申请号：US10174139
申请日：2002-06-18
申请人： WACKER SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN AG
发明人： Guido Wenski , Thomas Altmann , Gerhard Heier , Wolfgang Winkler , Gunther Kann
IPC分类号： H01L021/461
CPC分类号： H01L21/02024 , B24B17/10 , B24B37/08
摘要： A process is for material-removing machining, on both sides simultaneously, of semiconductor wafers having a front surface and a back surface, the semiconductor wafers resting in carriers which are set in rotation by means of an annular outer drive ring and an annular inner drive ring and being moved between two oppositely rotating working disks in a manner which can be described by means of in each case one path curve relative to the upper working disk and one path curve relative to the lower working disk, wherein the two path curves after six loops around the center have the appearance of still being open, and at each point have a radius of curvature which is at least as great as the radius of the inner drive ring.
摘要翻译：一种方法是在半导体晶片具有前表面和后表面的同时在两面同时进行材料去除加工，半导体晶片位于载体中，该载体通过环形外驱动环和环形内驱动在两个相对旋转的工作盘之间移动，可以通过在每种情况下通过相对于上工作盘的一个路径曲线和相对于下工作盘的一个路径曲线来描述，其中在六个之后的两个路径曲线围绕中心的环路具有仍然是开放的外观，并且在每个点处具有至少与内部驱动环的半径一样大的曲率半径。

2. 发明申请

US20030045089A1 Semiconductor wafer with improved flatness, and process for producing the semiconductor wafer 有权
公开(公告)号：US20030045089A1
公开(公告)日：2003-03-06
申请号：US10218006
申请日：2002-08-13
申请人： Wacker Siltronic Gesellschaft Fur Halbleitermaterialien AG
发明人： Guido Wenski , Thomas Altmann , Ernst Feuchtinger , Willibald Bernwinkler , Wolfgang Winkler , Gerhard Heier
IPC分类号： H01L021/4763
CPC分类号： H01L21/02024 , B24B37/042 , B24B37/08
摘要： A semiconductor wafer has a front surface and a back surface and flatness values based on partial areas of a surface grid on the front surface of the semiconductor wafer, which has a maximum local flatness value SFQRmax of less than or equal to 0.13 nullm and individual SFQR values which in a peripheral area of the semiconductor wafer do not differ significantly from those in a central area of the semiconductor wafer. There is also a process for producing this semiconductor wafer, wherein the starting thickness of the semiconductor wafer is 20 to 200 nullm greater than the thickness of the carrier and the semiconductor wafer is polished until the end thickness of the semiconductor wafer is 2 to 20 nullm greater than the thickness of the carrier.

3. 发明申请

US20020055324A1 Process for polishing silicon wafers 审中-公开
标题翻译：抛光硅片的工艺
公开(公告)号：US20020055324A1
公开(公告)日：2002-05-09
申请号：US09952054
申请日：2001-09-11
申请人： WACKER SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN AG
发明人： Guido Wenski , Thomas Altmann , Gerhard Heier , Wolfgang Winkler
IPC分类号： B24B007/19
CPC分类号： H01L21/02024 , B24B1/00 , B24B37/04 , C09G1/02
摘要： A process for the chemical-mechanical polishing of silicon wafers is by rotational movement of the silicon surface which is to be polished on a polishing plate which is covered with polishing cloth, with a continuous supply of an alkaline polishing agent which contains abrasives, at least 2 nullm of material being removed from the polished silicon surface during the polishing. Immediately after the polishing has finished, and while maintaining the rotational movement, instead of the polishing agent at least two different stopping agents are supplied in succession, each removing less than 0.5 nullm of material from the polished silicon surface.
摘要翻译：硅晶片的化学机械抛光的方法是通过将待研磨的硅表面的旋转运动转移到用抛光布覆盖的抛光板上，连续供应含有磨料的碱性抛光剂，至少在抛光过程中，从抛光的硅表面去除2个材料的材料。抛光结束后，在保持旋转运动的同时，代替抛光剂，连续地供给至少两种不同的阻挡剂，每次从抛光的硅表面除去少于0.5μm的材料。

4. 发明申请

US20010047978A1 Process for the double-side polishing of semiconductor wafers and carrier for carrying out the process 有权
标题翻译：用于半导体晶片和载体的双面抛光的工艺用于实施该工艺
公开(公告)号：US20010047978A1
公开(公告)日：2001-12-06
申请号：US09826135
申请日：2001-04-04
申请人： WACKER SILTRONIC GESELLSCHAFT FUR HALBLEITERMATERIALIEN AG
发明人： Guido Wenski , Gerhard Heier , Wolfgang Winkler , Thomas Altmann
IPC分类号： B44C001/22
CPC分类号： B24B41/067 , B24B37/08 , H01L21/02024
摘要： A process for the double-side polishing of semiconductor wafers between two polishing plates which rotate in opposite directions and are covered with polishing cloth, so that at least 2 nullm of semiconductor material is removed. The semiconductor wafers lay in plastic-lined cutouts in a set of a plurality of planar carriers which are made from steel and the mean thickness of which is 2 to 20 nullm smaller than the mean thickness of the fully polished semiconductor wafers. The set comprises only those carriers whose difference in thickness is at most 5 nullm, and each carrier belonging to the set has at least one unambiguous identification feature which assigns it to the set. An item of information contained in the identification feature is used in order for the plastic linings to be exchanged at fixed intervals and to ensure that the semiconductor wafers remain in the same order after the polishing as before the polishing. There is also a carrier which is suitable for carrying out the process.
摘要翻译：在两个抛光板之间进行双面抛光的方法，该两个抛光板以相反的方向旋转并被抛光布覆盖，以至于除去了至少2微米的半导体材料。半导体晶片放置在由钢制成的多组平面载体的一组塑料衬里的切口中，其平均厚度比完全抛光的半导体晶片的平均厚度小2至20μm。该集合仅包括厚度差为5mum以下的载波，属于该集合的每个载波具有至少一个明确的识别特征，将其分配给该集合。使用包含在识别特征中的信息项目，以便以固定的间隔更换塑料衬里，并确保半导体晶片在抛光之后保持与抛光之前相同的顺序。还有一个适用于执行该过程的载体。

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