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    • 2. 发明授权
    • Megasonic cleaning method
    • 超声波清洗方式
    • US5037481A
    • 1991-08-06
    • US482086
    • 1990-02-15
    • Mario E. Bran
    • Mario E. Bran
    • B06B1/06B06B3/00B08B3/12
    • B06B3/00B06B1/0607B08B3/12
    • A transducer array for use in a megasonic cleaning system including a transmitter element made of a material which will efficiently transmit megasonic energy when bonded to one conductive surface of a transducer. In one form, the transmitter and the transducer are flat plates. In another form, a flat transducer is bonded to a solid semi-cylindrical transmitter which causes the megasonic energy pattern to diverge. In another form, the transmitter is a semi-cylindrical shell or is tubular, and the transducer is bonded to and curved to conform to the transmitter. The transducer extends about 120.degree., and produces a straight line of sight diverging energy pattern.
    • 一种用于兆声波清洁系统的换能器阵列,包括由材料制成的发射器元件,当与换能器的一个导电表面接合时,能够有效地传输兆声波能量。 在一种形式中,发射器和换能器是平板。 在另一种形式中,平坦换能器被结合到实心的半圆柱形发射器,这导致兆声波能量模式发散。 在另一种形式中,变送器是半圆柱形壳体或管状的,并且换能器被接合并弯曲以符合变送器。 传感器延伸约120°,产生直线视线发散能量图。
    • 4. 发明授权
    • Megasonic cleaning apparatus
    • 超声波清洗设备
    • US4998549A
    • 1991-03-12
    • US272501
    • 1988-11-16
    • Mario E. Bran
    • Mario E. Bran
    • B06B1/06B06B3/00B08B3/12
    • B08B3/12B06B1/0607B06B3/00
    • A transducer array for use in a megansonic cleaning system including a transmitter element made of a material which will efficiently transmit megasonic energy when bonded to one conductive surface of a transducer. In one form, the transmitter and the transducer are flat plates. In another form, a flat transducer is bonded to a solid semi-cylindrical transmitter which causes the megasonic energy pattern to diverge. In another form, the transmitter is a semi-cylindrical shell or is tubular, and the transducer is bonded to and curved to conform to the transmitter. The transducer extends about 120.degree., and produces a straight line of sight diverging energy pattern.
    • 一种用于超音速清洁系统的换能器阵列,包括由材料制成的发射器元件,当与换能器的一个导电表面接合时,能够有效地传输兆声波能量。 在一种形式中,发射器和换能器是平板。 在另一种形式中,平坦换能器被结合到实心的半圆柱形发射器,这导致兆声波能量模式发散。 在另一种形式中,变送器是半圆柱形壳体或管状的,并且换能器被接合并弯曲以符合变送器。 传感器延伸约120°,产生直线视线发散能量图。
    • 7. 发明授权
    • Semiconductor wafer cleaning system
    • 半导体晶圆清洗系统
    • US5950645A
    • 1999-09-14
    • US910033
    • 1997-08-11
    • Michael B. OlesenMario E. Bran
    • Michael B. OlesenMario E. Bran
    • B08B3/12C11D3/39C11D7/06C11D7/08C11D11/00H01L21/00H01L21/306B08B3/10
    • H01L21/02052B08B3/12C11D11/0047C11D11/007C11D3/3947C11D7/06C11D7/08H01L21/67051H01L21/67057Y10S134/902
    • Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected into the lower end of the tank and allowed to overflow at the upper end. One solution comprises one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solution comprises highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The solutions are initiated either by injecting the chemicals into an incoming DI water line or directly into the tank. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy. Quick dump valves in the tank bottom enable the solutions to be quickly dumped followed by one or more rinse steps, including a quick refill while spraying and then dumping of the rinsing water.
    • 将半导体晶片定位在清洗槽中并经受一个或多个高度稀释的清洁溶液的顺序流动,其被注入到罐的下端并允许在上端溢出。 一种溶液包括一部分氢氧化铵,两份过氧化氢和300-600份去离子水以及一些痕量的高纯度表面活性剂。 第一个溶液倾倒后,冲洗水流过罐。 第二种溶液包括高度稀释的氢氟酸。 第三个解决方案比第一个解决方案更稀。 第四种溶液含有用去离子水大大稀释的盐酸。 解决方案是通过将化学品注入进入的DI水管线或直接进入罐中来启动。 清洗槽在其下部设有兆声波发生器,用于选择性地应用兆声波能量。 罐底快速排放阀能够快速倾倒溶液,然后进行一个或多个冲洗步骤,包括在喷涂时快速补充,然后倾倒冲洗水。
    • 10. 发明授权
    • Semiconductor wafer cleaning system
    • 半导体晶圆清洗系统
    • US5656097A
    • 1997-08-12
    • US361139
    • 1994-12-21
    • Michael B. OlesenMario E. Bran
    • Michael B. OlesenMario E. Bran
    • B08B3/12C11D3/39C11D7/06C11D7/08C11D11/00H01L21/00H01L21/306B08B3/08B08B7/02C23G1/02
    • H01L21/02052B08B3/12C11D11/0047C11D11/007C11D3/3947C11D7/06C11D7/08H01L21/67051H01L21/67057Y10S134/902Y10S438/906
    • Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected from the lower end of the tank and allowed to overflow at the upper end. One solution contains one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solutions contains highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy. Quick dump valves in the tank bottom enable the solutions to be quickly dumped followed by one or more rinse steps, including a quick refill while spraying and then dumping of the rinsing water.
    • 将半导体晶片定位在清洗槽中并经受从罐的下端喷射并允许在上端溢出的一个或多个高度稀释的清洁溶液的顺序流动。 一种溶液含有一部分氢氧化铵,两份过氧化氢和300-600份去离子水以及一些痕量的高纯度表面活性剂。 第一个溶液倾倒后,冲洗水流过罐。 第二种溶液含有高度稀释的氢氟酸。 第三个解决方案比第一个解决方案更稀。 第四种溶液含有用去离子水大大稀释的盐酸。 清洗槽在其下部设有兆声波发生器,用于选择性地应用兆声波能量。 罐底快速排放阀能够快速倾倒溶液,然后进行一个或多个冲洗步骤,包括在喷涂时快速补充,然后倾倒冲洗水。