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1. 发明授权

US11674217B2 Method of manufacturing substrate with a transparent conductive film, manufacturing apparatus of substrate with transparent conductive film, substrate with transparent conductive film, and solar cell 有权
公开(公告)号：US11674217B2
公开(公告)日：2023-06-13
申请号：US16070094
申请日：2017-03-23
申请人： ULVAC, INC.
发明人： Junsuke Matsuzaki , Hirohisa Takahashi
IPC分类号： C23C14/56 , C23C14/18 , C23C14/50 , H01J37/32 , H01J37/34 , H01L21/67 , H01L21/677 , H01L31/18 , C23C14/34 , H01L31/0224 , H01L31/0376 , H01L31/075 , H01L31/20
CPC分类号： C23C14/56 , C23C14/185 , C23C14/50 , H01J37/32899 , H01J37/3488 , H01L21/67173 , H01L21/67742 , H01L31/1864 , H01L31/1884 , C23C14/34 , H01L31/022475 , H01L31/03762 , H01L31/075 , H01L31/202
摘要： A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220° C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.

2. 发明授权

US11628565B2 Substrate transport device and substrate transporting method 有权
公开(公告)号：US11628565B2
公开(公告)日：2023-04-18
申请号：US17036365
申请日：2020-09-29
申请人： ULVAC, Inc.
发明人： Kazuhiro Musha , Hirofumi Minami , Takayuki Suzuki
IPC分类号： B25J9/16 , B25J15/00 , B25J13/08
摘要： A substrate transport device includes an arm, an end effector coupled to the arm, a driver configured to lift the arm so that the end effector receives a substrate, and a controller configured to control an output of the driver to change a lifting speed of the arm. While lifting the arm at a first speed to lift the end effector toward the substrate, the controller changes the lifting speed to a second speed that is lower than the first speed when the end effector starts to raise a height position of the substrate.

3. 发明授权

US11437256B2 Housing case for crystal oscillator 有权
公开(公告)号：US11437256B2
公开(公告)日：2022-09-06
申请号：US17155766
申请日：2021-01-22
申请人： ULVAC, INC.
发明人： Yuki Kaida , Yousuke Oguma
IPC分类号： H01L21/673
摘要： A housing case for a crystal oscillator monitors a film thickness of a thin film to be formed on a surface of the crystal oscillator, the monitoring being performed by measuring a resonance frequency during film formation in a vacuum atmosphere. The housing case has: a case main body having disposed on an upper surface thereof a plurality of first recessed parts each being capable of housing therein a crystal oscillator in a horizontal posture with a main surface thereof facing in an up-and-down direction; a first cap body detachably mounted on the case main body from an upper side thereof; and an engaging means for engaging the first cap body relative to the case main body. The engaging means is so constructed and arranged that, in a state in which the first cap body is engaged with the case main body, the crystal oscillators housed in the first recessed parts are restrained from jumping out of position.

4. 发明申请

US20220195582A1 THIN FILM MANUFACTURING APPARATUS 有权
公开(公告)号：US20220195582A1
公开(公告)日：2022-06-23
申请号：US17601693
申请日：2020-12-22
申请人： ULVAC, Inc.
发明人： Manabu GIBO , Toshiharu KURAUCHI , Hiroshi EHIRA
IPC分类号： C23C14/32 , H01J37/32 , C23C14/04 , H01M10/0525 , H01M10/0562
摘要： The invention provides an apparatus that causes film formation particles to adhere to a surface of a substrate moving in a hermetically-sealable chamber and thereby forms a thin film thereon and includes: a plasma generator; a substrate transfer unit; a film-formation source supplier; and a film-formation region limiter. The plasma generator includes a magnet located at the other surface of the substrate and a gas supplier that supplies a film forming gas to near the surface of the substrate. The film-formation region limiter includes a shield that is located close to the surface of the substrate and has an opening. The ratio of a diameter of the opening of the shield to a diameter of the plasma generated by the plasma generator in a direction along the surface of the substrate is in a range of less than or equal to 110/100.

5. 发明授权

US11362274B2 Laterally switching cell having sub-stoichiometric metal oxide active layer 有权
公开(公告)号：US11362274B2
公开(公告)日：2022-06-14
申请号：US16740163
申请日：2020-01-10
申请人： International Business Machines Corporation , ULVAC, Inc.
发明人： John Rozen , Takashi Ando , Martin M. Frank , Yohei Ogawa
IPC分类号： H01L45/00
摘要： A laterally switching cell structure including a metal-insulator-metal stack includes an active metal oxide layer including one or more sub-stoichiometric regions. The metal oxide layer includes one or more metal-oxides deposited conformally using a mixed precursor atomic layer deposition process. A graded oxygen profile in the metal oxide layer(s) of the stack including a mirrored impurity density may be formed wherein the sub-stoichiometric region(s) include a relatively high density of impurities obtained as reaction by-products. Arrays of cell structures can be formed with no requirement for a thick active electrode, allowing for more space for a metal fill and optional selector, thereby reducing access resistance.

6. 发明授权

US11345992B2 Vacuum deposition apparatus 有权
公开(公告)号：US11345992B2
公开(公告)日：2022-05-31
申请号：US17156985
申请日：2021-01-25
申请人： ULVAC, INC.
发明人： Shuuji Saitou , Akihiro Yokoyama
IPC分类号： C23C14/24 , C23C14/50 , C23C14/56
摘要： Inside a main chamber there are provided: first partition walls partitioning a deposition chamber having a deposition unit; and second partition walls disposed in continuation to the first partition walls so as to cover outer cylinder parts of a can-roller while leaving a first gap that curves at a curvature coinciding with an outer peripheral surface of the can-roller. The deposition chamber and an adjacent chamber are in communication with each other with the first gap such that a conductance between the deposition chamber and the adjacent chamber is determined by the second partition walls. At least one of the second partition walls is arranged to be rotatable, with a rotary shaft of the can-roller, between a shielding position which shields such a part of the can-roller as is lying opposite to the deposition unit, and a withdrawn position which is circumferentially away from the deposition unit.

7. 发明授权

US11286554B2 Sputtering apparatus 有权
公开(公告)号：US11286554B2
公开(公告)日：2022-03-29
申请号：US16621340
申请日：2018-06-25
申请人： ULVAC, INC.
发明人： Katsuaki Nakano , Kanji Yaginuma
IPC分类号： C23C14/35 , C23C14/04 , C23C14/50
摘要： The sputtering apparatus has a vacuum chamber in which is disposed a target. While rotating a circular substrate at a predetermined rotational speed with a center of the substrate, the target is sputtered to form the thin film on the surface. The sputtering apparatus has: a stage for rotatably holding the substrate in a state in which the center of the substrate is offset by a predetermined distance to radially one side from the center of the target; and a shielding plate disposed between the target and the substrate on the stage. The shielding plate has an opening part allowing to pass sputtered particles scattered out of the target as a result of sputtering the target. The opening part has a contour in which, with a central region of the substrate serving as an origin, the area of the opening part gradually increases from the origin toward radially outward.

8. 发明申请

US20220081774A1 VACUUM PROCESSING APPARATUS AND METHOD OF CLEANING VACUUM PROCESSING APPARATUS 有权
公开(公告)号：US20220081774A1
公开(公告)日：2022-03-17
申请号：US17420086
申请日：2019-12-27
申请人： ULVAC, Inc.
发明人： Takehisa MIYAYA , Yosuke JIMBO , Yoshiaki YAMAMOTO , Kenji ETO , Yoichi ABE
IPC分类号： C23C16/505 , H01J37/32 , C23C16/44 , C23C16/455
摘要： A vacuum processing apparatus of the present invention is a vacuum processing apparatus which performs plasma processing. The vacuum processing apparatus includes an electrode flange, a shower plate, an insulating shield, a processing chamber in which a processing-target substrate is to be disposed, an electrode frame, and a slide plate. The electrode frame and the slide plate are slidable in response to thermal deformation that occurs when a temperature of the shower plate is raised or lowered. The shower plate is supported by the electrode frame using a support member penetrating through an elongated hole. The elongated hole is formed so that the support member is relatively movable in the elongated hole in response to thermal deformation that occurs when a temperature of the shower plate is raised or lowered.

9. 发明申请

US20220056571A1 Film Forming Method 有权
公开(公告)号：US20220056571A1
公开(公告)日：2022-02-24
申请号：US17273074
申请日：2020-07-09
申请人： ULVAC, INC.
发明人： Kengo Tsutsumi , Shinji Kohari , Kouji Sogabe , Toshimitsu Uehigashi , Takahiro Nanba
IPC分类号： C23C14/00 , C23C14/06 , C23C14/54
摘要： A film forming method is provided in which, when a dielectric film is formed by sputtering a target, the number of particles to get adhered to the surface of a to-be-processed substrate immediately after film formation can be decreased to the extent possible without impairing the function of effectively suppressing the induction of abnormal discharging. A film forming method, according to this invention, of forming a dielectric film on a surface of a to-be-processed substrate by sputtering a target inside a vacuum chamber includes: at the time of sputtering the target, applying negative potential to the target in the form of pulses; and a frequency of applying the negative potential in the form of pulses is set to a range of 100 kHz or more and 150 kHz or below and an application time (Ton) of the negative potential is set to a range of 5 μsec or longer and 8 μsec or shorter.

10. 发明申请

US20210363640A1 VACUUM PROCESSING APPARATUS AND SUPPORT SHAFT 有权
公开(公告)号：US20210363640A1
公开(公告)日：2021-11-25
申请号：US16958954
申请日：2019-06-14
申请人： ULVAC, INC.
发明人： Yoshiaki YAMAMOTO , Yosuke JIMBO , Takehisa MIYAYA , Kenji ETO , Yoichi ABE
IPC分类号： C23C16/455 , C23C16/509 , H01J37/32
摘要： A vacuum processing apparatus is a vacuum processing apparatus which performs plasma processing and includes an electrode flange, a shower plate, a processing chamber, and a support shaft. The shower plate is provided with a plurality of gas flow paths that are formed therein, and a shaft gas flow path extending in an axial direction of the support shaft is provided at a portion in which the support shaft is connected to the shower plate so that the conductance does not change in an in-plane direction of the shower plate.

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