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1. 发明授权

US5892320A Field emission display with self-aligned grid 失效
标题翻译：具有自对准栅格的场发射显示
公开(公告)号：US5892320A
公开(公告)日：1999-04-06
申请号：US835155
申请日：1997-04-04
申请人： Kevin Tjaden , John K. Lee
发明人： Kevin Tjaden , John K. Lee
IPC分类号： H01J3/02 , H01J9/02 , H01J1/30 , H01J19/24
CPC分类号： H01J9/025 , H01J3/022
摘要： A field emission display includes a substrate (400) having a trench (402) formed therein, an emitter (418) formed in the trench (402), a dielectric layer (412) disposed on the substrate (400), and a grid material layer (406) disposed on the dielectric layer (412). The dielectric layer (412) is exposed by a planarization method. Consequently, the emitter (418) is necessarily aligned with the opening in the grid material layer (406). An electric field applied to the grid material layer (406) activates emitter (418) to emit electrons (416) to strike a faceplate (414).
摘要翻译：场发射显示器包括其中形成有沟槽（402）的衬底（400），形成在沟槽（402）中的发射极（418），设置在衬底（400）上的电介质层（412）层（406）设置在电介质层（412）上。介电层（412）通过平面化方法曝光。因此，发射器（418）必须与栅格材料层（406）中的开口对准。施加到栅格材料层（406）的电场激活发射器（418）以发射电子（416）以撞击面板（414）。

2. 发明授权

US5886461A Transparent conductor for field emission displays 失效
标题翻译：用于场发射显示器的透明导体
公开(公告)号：US5886461A
公开(公告)日：1999-03-23
申请号：US547504
申请日：1995-10-24
申请人： Surjit S. Chadha
发明人： Surjit S. Chadha
IPC分类号： H01J29/08 , H01F1/02
CPC分类号： H01J29/085
摘要： The present invention is directed to a conductor/electrode for a faceplate anode of a field emission display wherein said conductor/electrode is comprised of tin oxide. Alternatively, the present invention is directed to a transparent conductor/electrode for a faceplate anode of a field emission display wherein said conductor/electrode is comprised of from about 90% to about 99% tin oxide and from about 1% to about 10% antimony.
摘要翻译：本发明涉及用于场致发射显示器的面板阳极的导体/电极，其中所述导体/电极由氧化锡组成。或者，本发明涉及用于场致发射显示器的面板阳极的透明导体/电极，其中所述导体/电极由约90％至约99％的氧化锡和约1％至约10％的锑。

3. 发明授权

US5871807A Multiple level printing in a single pass 失效
公开(公告)号：US5871807A
公开(公告)日：1999-02-16
申请号：US514778
申请日：1995-08-14
申请人： Darryl Stansbury
发明人： Darryl Stansbury
IPC分类号： B05C5/02 , H01J9/02 , B05D5/12
CPC分类号： H01J9/02 , B05C5/0216 , H01J2329/00
摘要： A process is provided for forming a conductive line between a conductor and a spacer formed on a substrate of a field emission display. In one embodiment, the process performs the steps of disposing a screen between the substrate and a distributing member, the screen having an opening which permits the extrusion a conductive material, and moving the distributing member relative to the screen to extrude the conductive material through the opening and form a conductive line connecting the conductor and the spacer, wherein the snap off distance is varied according as the distributing member moves along the substrate.

4. 发明授权

US5827624A Mask modification for focal plane on contact photolithography tool 失效
标题翻译：接触光刻工具上焦平面的掩模修饰
公开(公告)号：US5827624A
公开(公告)日：1998-10-27
申请号：US774378
申请日：1996-12-30
申请人： Darryl Stansbury
发明人： Darryl Stansbury
IPC分类号： G03F1/00 , G03F7/00 , G03F9/00
CPC分类号： G03F9/00 , G03F1/50 , G03F7/0007
摘要： The lower surface of a photolithographic mask contains recesses sized and adapted to receive upwardly-projecting features so that, when the mask is placed in position over the to-be-exposed and etched surface, the lower surface of the mask is in direct contact with or very closely adjacent (e.g., not more than about 5 or 6 microns above) the top of the resist layer. In the disclosed practice, the mask is quartz, the lower surface of the mask is pressed into contact with the resist before the resist is exposed, and the device being formed is a field emission device.
摘要翻译：光刻掩模的下表面包含尺寸适于接收向上突出的特征的凹槽，使得当掩模被放置在待曝光和蚀刻的表面上的位置时，掩模的下表面与或者非常紧密地邻接（例如，不超过约5或6微米）抗蚀剂层的顶部。在公开的实践中，掩模是石英，在抗蚀剂暴露之前，掩模的下表面被压接成与抗蚀剂接触，并且所形成的器件是场致发射器件。

5. 发明授权

US5817373A Dry dispense of particles for microstructure fabrication 失效
标题翻译：用于微结构制造的颗粒的干燥分配
公开(公告)号：US5817373A
公开(公告)日：1998-10-06
申请号：US764756
申请日：1996-12-12
申请人： David A. Cathey , Kevin Tjaden , James J. Alwan
发明人： David A. Cathey , Kevin Tjaden , James J. Alwan
IPC分类号： H01J9/02 , B05D1/06 , B05D1/32 , C03C25/06
CPC分类号： H01J9/025
摘要： A substrate is placed on a charging surface, to which a first voltage is applied. Etch-resistant dry particles are placed in a cup in a nozzle to which a second voltage, less than the first voltage, is applied. A carrier gas is directed through the nozzle, which projects the dry particles out of the nozzle toward the substrate. The particles pick up a charge from the potential applied to the nozzle and are electrostatically attracted to the substrate. The particles adhere to the substrate, where they form an etch mask. The substrate is etched and the particles are removed. Emitter tips for a field emission display may be formed in the substrate.
摘要翻译：将基板放置在施加第一电压的充电表面上。将耐蚀刻干燥颗粒放置在喷嘴中的杯中，其中施加小于第一电压的第二电压。载气被引导通过喷嘴，其将干燥颗粒从喷嘴向衬底投射。颗粒从施加到喷嘴的电位拾取电荷，并被静电吸引到基板上。颗粒粘附到基底上，在那里它们形成蚀刻掩模。蚀刻基板并除去颗粒。用于场致发射显示器的发射极尖端可以形成在衬底中。

6. 发明授权

US5804910A Field emission displays with low function emitters and method of making low work function emitters 失效
标题翻译：具有低功能发射极的场发射显示器和制作低功函数发射器的方法
公开(公告)号：US5804910A
公开(公告)日：1998-09-08
申请号：US599443
申请日：1996-01-18
申请人： Kevin Tjaden , James J. Alwan
发明人： Kevin Tjaden , James J. Alwan
IPC分类号： H01J1/304 , H01J1/30
CPC分类号： H01J1/3042 , H01J2201/304 , H01J2201/319
摘要： A cold cathode structure, useful for field emission displays, is disclosed. A thin resistive silicon film is disposed on a glass substrate; conductive emitter tips are disposed on top thereof. An alloy of amorphous silicon and amorphous carbon is used for the emitter tips. The proportion of the carbon in the alloy increases, gradually or abruptly, from the base to the top of the emitter tips. The carbon gradient is implemented during the process step, in which an n-type silicon layer is formed from which the emitter tips are made in subsequent masking and etching steps. The amount of carbon makes the emitter tips harder and gives lower work function at greater stability. Moreover, the carbon gradient allows for additional sharpening of the emitter tips.
摘要翻译：公开了一种用于场发射显示器的冷阴极结构。薄电阻硅膜设置在玻璃基板上; 导电发射极尖端设置在其顶部。非晶硅和无定形碳的合金用于发射极尖端。合金中碳的比例逐渐或突然地从发射极尖端的基极向顶部增加。碳梯度在工艺步骤中实现，其中形成n型硅层，在其后面的掩模和蚀刻步骤中制成发射极尖端。碳的量使得发射极尖端更硬，并且在更高的稳定性下赋予更低的功函数。此外，碳梯度允许发射器尖端的额外的锐化。

7. 发明授权

US5772488A Method of forming a doped field emitter array 失效
标题翻译：形成掺杂场发射极阵列的方法
公开(公告)号：US5772488A
公开(公告)日：1998-06-30
申请号：US543819
申请日：1995-10-16
申请人： David A. Cathey , Surjit S. Chadha , Behnam Moradi
发明人： David A. Cathey , Surjit S. Chadha , Behnam Moradi
IPC分类号： H01J1/62 , H01J9/02 , H01J63/04
CPC分类号： H01J9/025 , H01J2329/00
摘要： According to one aspect of the invention, a field emission display is provided comprising: an anode; a phosphor screen located on the anode; a cathode; an evacuated space between the anode and the cathode; an emitter located on the cathode opposite the phosphor; wherein the emitter comprises an electropositive element both in a body of the emitter and on a surface of the emitter. According to another aspect of the invention a process for manufacturing an FED is provided comprising the steps of: forming an emitter comprising an electropositive element in the body of the tip; positioning the emitter in opposing relation to a phosphor display screen; creating an evacuated space between the emitter tip and the phosphor display screen; and causing the electropositive element to migrate to the an emission surface of the emitter.
摘要翻译：根据本发明的一个方面，提供一种场发射显示器，包括：阳极; 位于阳极上的荧光屏; 阴极阳极和阴极之间的抽空空间; 位于与磷光体相对的阴极上的发射极; 其中所述发射器包括在所述发射体的主体和所述发射极的表面上的正电极元件。根据本发明的另一方面，提供了一种用于制造FED的方法，包括以下步骤：在尖端的主体中形成包含正电荷元件的发射器; 将发射器定位成与荧光体显示屏相对的关系; 在发射极尖端和荧光体显示屏之间产生抽空空间; 并使正电荷元件迁移到发射体的发射表面。

8. 发明授权

US5712534A High resistance resistors for limiting cathode current in field emmision displays 失效
标题翻译：用于限制场致发射显示器中阴极电流的高电阻电阻
公开(公告)号：US5712534A
公开(公告)日：1998-01-27
申请号：US688098
申请日：1996-07-29
申请人： John Kichul Lee , David A. Cathey, Jr. , Kevin Tjaden
发明人： John Kichul Lee , David A. Cathey, Jr. , Kevin Tjaden
IPC分类号： H01J1/304 , H01J9/02 , H01J29/04 , H01J31/12 , H01L21/02 , H01L21/822 , H01L27/04 , H01J1/30
CPC分类号： H01L28/24 , H01J9/025 , H01L28/20 , H01J2201/319
摘要： A high resistance resistor for regulating current in a field emission display is integrated into circuitry of the field emission display. The resistor is in electrical communication with emitter sites for the field emission display and with other circuit components such as ground. The high resistance resistor can be formed as a layer of a high resistivity material, such as intrinsic polycrystalline silicon, polycrystalline silicon doped with a conductivity-degrading dopant, lightly doped polysilicon, titanium oxynitride, tantalum oxynitride or a glass type material deposited on a baseplate of the field emission display. Contacts are formed in the high resistivity material to establish electrical communication between the resistor and the emitter sites and between the resistor and the other circuit components. The contacts can be formed as low resistance contacts (e.g., ohmic contacts) or as high resistance contacts (e.g., Schottky contacts).
摘要翻译：用于调节场发射显示器中的电流的高电阻电阻器被集成到场致发射显示器的电路中。电阻器与发射器位置电气连通，用于场发射显示器和其他电路部件，例如接地。高电阻电阻器可以形成为高电阻率材料的层，例如本征多晶硅，掺杂有导电性降解掺杂剂的多晶硅，轻掺杂多晶硅，氮氧化钛，氮氧化钽或沉积在基板上的玻璃类型材料的场发射显示。在高电阻率材料中形成触点，以在电阻器和发射极部位之间以及电阻器和其它电路部件之间建立电连通。触点可以形成为低电阻触点（例如欧姆接触）或作为高电阻触点（例如肖特基触点）。

9. 发明授权

US5705079A Method for forming spacers in flat panel displays using photo-etching 失效
公开(公告)号：US5705079A
公开(公告)日：1998-01-06
申请号：US587732
申请日：1996-01-19
申请人： Jason B. Elledge
发明人： Jason B. Elledge
IPC分类号： C03C15/00 , C03C23/00 , H01J9/18 , H01J9/24 , H01J31/12 , B44C1/22
CPC分类号： H01J9/242 , C03C15/00 , C03C23/002 , C03C23/007 , H01J31/123 , H01J2329/8625
摘要： Photoetchable glass is used to form spacer elements for large area field emission displays. Frit dots are placed onto a substrate. A sheet of photo etchable glass is exposed to UV light using a mask such that the UV light exposes the etchable areas and does not expose the areas which will form the spacers. The etchable glass is then heat treated to crystallize the UV exposed areas and to tailor the coefficient of thermal expansion. Next the glass is adhered to the frit coated substrate and the UV exposed areas etched away leaving spacers adhered to frit dots.

10. 发明授权

US5688438A Preparation of high purity silicate-containing phosphors 失效
标题翻译：高纯硅酸盐荧光粉的制备
公开(公告)号：US5688438A
公开(公告)日：1997-11-18
申请号：US597218
申请日：1996-02-06
申请人： Surjit S. Chadha
发明人： Surjit S. Chadha
IPC分类号： C09K11/08 , C09K11/57 , C09K11/66 , C09K11/67 , C09K11/74 , C09K11/77 , C09K11/59
CPC分类号： C09K11/574 , C09K11/0838 , C09K11/576 , C09K11/666 , C09K11/676 , C09K11/7442 , C09K11/7774
摘要： A method of preparing a silicate-containing phosphor is provided. The method includes combining a mixture of metal or metalloid compounds with a gaseous silicon-containing in an amount sufficient to convert the compounds to silicates, and heating the silicates under conditions effective to form a phosphor.
摘要翻译：提供了制备含硅酸盐荧光体的方法。该方法包括将金属或准金属化合物的混合物与足以将化合物转化为硅酸盐的量的气态含硅混合，以及在有效形成荧光体的条件下加热硅酸盐。

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