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1. 发明授权

US08508006B2 Co/Ni multilayers with improved out-of-plane anisotropy for magnetic device applications 有权
标题翻译： Co / Ni多层膜，具有改进的磁性器件应用的面外各向异性
公开(公告)号：US08508006B2
公开(公告)日：2013-08-13
申请号：US13561201
申请日：2012-07-30
申请人： Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
发明人： Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
IPC分类号： H01L29/82 , H01L43/00 , H01L29/34 , H01L29/74 , H01L31/111
CPC分类号： H01L43/12 , G11C11/161 , H01F10/30 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L29/66007 , H01L29/66984 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. A CoFeB layer may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
摘要翻译：公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / X）n或（CoX）n组合物（其中n为2至30）X覆盖层叠层中的垂直磁各向异性（PMA）是V，Rh，Ir，Os，Ru，Au，Cr，Mo，Cu，Ti，Re，Mg或Si中的一种，CoX是无序合金。可以在层压层和隧道势垒层之间形成CoFeB层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。叠层可以用作MTJ中的参考层，偶极子层或自由层。在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

2. 发明授权

US08488357B2 Reference cell architectures for small memory array block activation 有权
标题翻译：小型存储器阵列块激活的参考单元结构
公开(公告)号：US08488357B2
公开(公告)日：2013-07-16
申请号：US12925492
申请日：2010-10-22
申请人： Toshio Sunaga , Lejan Pu , Perng-Fei Yuh , Chao-Hung Chang
发明人： Toshio Sunaga , Lejan Pu , Perng-Fei Yuh , Chao-Hung Chang
IPC分类号： G11C5/08
CPC分类号： G11C5/063 , G11C7/14 , G11C8/12 , G11C11/1655 , G11C11/1657 , G11C11/1673 , G11C11/1675
摘要： Systems and methods for realizing reference currents to improve reliability of sensing operations of segmented semiconductor memory arrays have been achieved. Preferred embodiments of the invention comprise MRAM arrays but the invention could be applied to any other memories requiring access on small, segmented arrays. All embodiments of the invention comprise a folded bit lines scheme, either in adjacent bit lines or in segment-to-segment folded bit lines. In two embodiments alternate strapping of Poly-Si Word Lines in every second segment is achieved by metal layer of Read Word Line and Write Select Line. An embodiment has stored 1 and 0 cells on both sides of a selected segment to be read.
摘要翻译：已经实现了用于实现参考电流以提高分段半导体存储器阵列的感测操作的可靠性的系统和方法。本发明的优选实施例包括MRAM阵列，但是本发明可以应用于需要在小的分段阵列上访问的任何其他存储器。本发明的所有实施例包括在相邻位线中或在段到段折叠的位线中的折叠位线方案。在两个实施例中，通过读取字线和写入选择线的金属层实现了每个第二段中的多晶硅字线的交替捆扎。一个实施例在要读取的所选择的段的两侧上存储了1个和0个单元。

3. 发明申请

US20130154038A1 High Performance MTJ Element for Conventional MRAM and for STT-RAM and a Method for Making the Same 有权
标题翻译：用于传统MRAM和STT-RAM的高性能MTJ元件及其制造方法
公开(公告)号：US20130154038A1
公开(公告)日：2013-06-20
申请号：US13764357
申请日：2013-02-11
申请人： MagiC Technologies, Inc.
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： H01L43/10
CPC分类号： H01L43/10 , B82Y10/00 , H01L27/228 , H01L43/08 , H01L43/12
摘要： A STT-RAM MTJ that minimizes spin-transfer magnetization switching current (Jc) is disclosed. The MTJ has a MgO tunnel barrier layer formed with a natural oxidation process to achieve a low RA (10 ohm-um2) and a Fe or Fe/CoFeB/Fe free layer which provides a lower intrinsic damping constant than a CoFeB free layer. A Fe, FeB, or Fe/CoFeB/Fe free layer when formed with a MgO tunnel barrier (radical oxidation process) and a CoFeB AP1 pinned layer in a MRAM MTJ stack annealed at 360° C. provides a high dR/R (TMR)>100% and a substantial improvement in read margin with a TMR/Rp_cov=20. High speed measurement of 100 nm×200 nm oval STT-RAM MTJs has shown a Jc0 for switching a Fe free layer is one half that for switching an amorphous Co40Fe40B20 free layer. A Fe/CoFeB/Fe free layer configuration allows the Hc value to be increased for STT-RAM applications.
摘要翻译：公开了使自旋转移磁化开关电流（Jc）最小化的STT-RAM MTJ。 MTJ具有形成有自然氧化工艺的MgO隧道阻挡层，以实现低的RA（10欧姆 - um2）和不含CoFeB自由层的较低的固有阻尼常数的Fe或Fe / CoFeB / Fe自由层。当在360℃退火的MRAM MTJ堆叠中形成具有MgO隧道势垒（自由基氧化法）和CoFeB AP1钉扎层的Fe，FeB或Fe / CoFeB / Fe自由层时，提供高dR / R（TMR ）> 100％，TMR / Rp_cov = 20时读取余量大幅度提高。 100 nm×200 nm椭圆STT-RAM MTJ的高速测量显示，用于切换无Fe层的Jc0是用于切换无定型Co40Fe40B20自由层的一半。 Fe / CoFeB / Fe自由层配置允许为STT-RAM应用增加Hc值。

4. 发明授权

US08450119B2 Magnetic tunnel junction patterning using Ta/TaN as hard mask 有权
标题翻译：磁隧道结图案使用Ta / TaN作为硬掩模
公开(公告)号：US08450119B2
公开(公告)日：2013-05-28
申请号：US11378555
申请日：2006-03-17
申请人： Chyu-Jiuh Torng , Wei Cao , Terry Ko
发明人： Chyu-Jiuh Torng , Wei Cao , Terry Ko
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L43/12 , H01L43/08
摘要： An MTJ MRAM cell is formed by using a reactive ion etch (RIE) to pattern an MTJ stack on which there has been formed a bilayer Ta/TaN hard mask. The hard mask is formed by patterning a masking layer that has been formed by depositing a layer of TaN over a layer of Ta on the MTJ stack. After the stack is patterned, the TaN layer serves at least two advantageous purposes: 1) it protects the Ta layer from oxidation during the etching of the stack and 2) it serves as a surface having excellent adhesion properties for a subsequently deposited dielectric layer.
摘要翻译：通过使用反应离子蚀刻（RIE）来形成已经形成双层Ta / TaN硬掩模的MTJ叠层来形成MTJ MRAM电池。硬掩模通过图案化掩模层而形成，该掩模层通过在MTJ堆叠上的Ta层上沉积TaN层而形成。在堆叠被图案化之后，TaN层起至少两个有利的作用：1）它在保护叠层的过程中保护Ta层免受氧化，2）它用作随后沉积的介电层具有优异粘合性能的表面。

5. 发明申请

US20130043471A1 Magnetic tunnel junction for MRAM applications 有权
公开(公告)号：US20130043471A1
公开(公告)日：2013-02-21
申请号：US13136929
申请日：2011-08-15
申请人： Wei Cao , Witold Kula , Chyu-Jiuh Torng
发明人： Wei Cao , Witold Kula , Chyu-Jiuh Torng
IPC分类号： H01L29/04 , H01L21/36
CPC分类号： H01L43/10 , B82Y40/00 , H01F10/3272 , H01F10/3295 , H01F41/307 , H01L43/12
摘要： Reading margin is improved in a MTJ designed for MRAM applications by employing a pinned layer with an AP2/Ru/AP1 configuration wherein the AP1 layer is a CoFeB/CoFe composite and by forming a MgO tunnel barrier adjacent to the CoFe AP1 layer by a sequence that involves depositing and oxidizing a first Mg layer with a radical oxidation (ROX) process, depositing and oxidizing a second Mg layer with a ROX method, and depositing a third Mg layer on the oxidized second Mg layer. The third Mg layer becomes oxidized during a subsequent anneal. MTJ performance may be further improved by selecting a composite free layer having a Fe/NiFeHf or CoFe/Fe/NiFeHf configuration where the NiFeHf layer adjoins a capping layer in a bottom spin valve configuration. As a result, read margin is optimized simultaneously with improved MR ratio, a reduction in bit line switching current, and a lower number of shorted bits.

6. 发明申请

US20120299134A1 Co/Ni Multilayers with Improved Out-of-Plane Anisotropy for Magnetic Device Applications 有权
标题翻译：具有改进的磁性器件应用的平面各向异性的Co / Ni多层
公开(公告)号：US20120299134A1
公开(公告)日：2012-11-29
申请号：US13561201
申请日：2012-07-30
申请人： Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
发明人： Guenole Jan , Ru-Ying Tong , Yu-Jen Wang
IPC分类号： H01L29/82 , H01L21/46
CPC分类号： H01L43/12 , G11C11/161 , H01F10/30 , H01F10/3254 , H01F10/3286 , H01F41/307 , H01L29/66007 , H01L29/66984 , H01L43/02 , H01L43/08 , H01L43/10
摘要： A MTJ for a spintronic device is disclosed and includes a thin seed layer that enhances perpendicular magnetic anisotropy (PMA) in an overlying laminated layer with a (Co/X)n or (CoX)n composition where n is from 2 to 30, X is one of V, Rh, Ir, Os, Ru, Au, Cr, Mo, Cu, Ti, Re, Mg, or Si, and CoX is a disordered alloy. A CoFeB layer may be formed between the laminated layer and a tunnel barrier layer to serve as a transitional layer between a (111) laminate and (100) MgO tunnel barrier. The laminated layer may be used as a reference layer, dipole layer, or free layer in a MTJ. Annealing between 300° C. and 400° C. may be used to further enhance PMA in the laminated layer.
摘要翻译：公开了一种用于自旋电子器件的MTJ，并且包括薄层种子层，其通过（Co / X）n或（CoX）n组合物（其中n为2至30）X覆盖层叠层中的垂直磁各向异性（PMA）是V，Rh，Ir，Os，Ru，Au，Cr，Mo，Cu，Ti，Re，Mg或Si中的一种，CoX是无序合金。可以在层压层和隧道势垒层之间形成CoFeB层，以用作（111）层压体和（100）MgO隧道势垒之间的过渡层。叠层可以用作MTJ中的参考层，偶极子层或自由层。在300℃和400℃之间的退火可用于进一步增强层压层中的PMA。

7. 发明申请

US20120205758A1 Magnetic element with improved out-of-plane anisotropy for spintronic applications 有权
标题翻译：具有改进的自旋电子应用的面外各向异性的磁性元件
公开(公告)号：US20120205758A1
公开(公告)日：2012-08-16
申请号：US12931866
申请日：2011-02-11
申请人： Guenole Jan , Ru Ying Tong , Witold Kula , Cheng Horng
发明人： Guenole Jan , Ru Ying Tong , Witold Kula , Cheng Horng
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L29/66984 , B82Y40/00 , G11C11/16 , G11C11/161 , H01F10/1933 , H01F10/3254 , H01F10/3286 , H01F10/3295 , H01F41/303 , H01L29/82 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetic element is disclosed wherein first and second interfaces of a free layer with a Hk enhancing layer and tunnel barrier, respectively, produce enhanced surface perpendicular anisotropy to lower switching current or increase thermal stability in a magnetic tunnel junction (MTJ). In a MTJ with a bottom spin valve configuration where the Hk enhancing layer is an oxide, the capping layer contacting the Hk enhancing layer is selected to have a free energy of oxide formation substantially greater than that of the oxide. The free layer may be a single layer or composite comprised of an Fe rich alloy such as Co20Fe60B20. With a thin free layer, the interfacial perpendicular anisotropy may dominate the shape anisotropy to generate a magnetization perpendicular to the planes of the layers. The magnetic element may be part of a spintronic device or serve as a propagation medium in a domain wall motion device.
摘要翻译：公开了一种磁性元件，其中具有Hk增强层和隧道势垒的自由层的第一和第二界面分别产生增强的表面垂直各向异性以降低开关电流或增加磁性隧道结（MTJ）中的热稳定性。在具有底部自旋阀结构的MTJ中，其中Hk增强层是氧化物，选择与Hk增强层接触的覆盖层，以使氧化物形成的自由能基本上大于氧化物的自由能。自由层可以是由富含Fe的合金如Co20Fe60B20组成的单层或复合材料。利用薄的自由层，界面垂直各向异性可以支配形状各向异性以产生垂直于层的平面的磁化。磁性元件可以是自旋电子器件的一部分或用作域壁运动装置中的传播介质。

8. 发明申请

US20120181537A1 Magnetic Tunnel Junction for MRAM applications 有权
标题翻译： MRAM应用的磁隧道结
公开(公告)号：US20120181537A1
公开(公告)日：2012-07-19
申请号：US12930877
申请日：2011-01-19
申请人： Wei Cao , Cheng T. Horng , Witold Kula , Chyu Jiuh Torng
发明人： Wei Cao , Cheng T. Horng , Witold Kula , Chyu Jiuh Torng
IPC分类号： H01L29/82 , H01L21/36 , H01L29/04
CPC分类号： H01L43/10 , G11C11/161 , H01L27/222 , H01L43/00 , H01L43/02 , H01L43/08
摘要： A MTJ in an MRAM array is disclosed with a composite free layer having a lower crystalline layer contacting a tunnel barrier and an upper amorphous NiFeX layer for improved bit switching performance. The crystalline layer is Fe, Ni, or FeB with a thickness of at least 6 Angstroms which affords a high magnetoresistive ratio. The X element in the NiFeX layer is Mg, Hf, Zr, Nb, or Ta with a content of 5 to 30 atomic %. NiFeX thickness is preferably between 20 to 40 Angstroms to substantially reduce bit line switching current and number of shorted bits. In an alternative embodiment, the crystalline layer may be a Fe/NiFe bilayer. Optionally, the amorphous layer may have a NiFeM1/NiFeM2 configuration where M1 and M2 are Mg, Hf, Zr, Nb, or Ta, and M1 is unequal to M2. Annealing at 300° C. to 360° C. provides a high magnetoresistive ratio of about 150%.
摘要翻译：公开了具有接触隧道势垒的较低结晶层和上部非晶NiFeX层的复合自由层的MRAM阵列中的MTJ，用于改善位切换性能。结晶层是厚度至少为6埃的Fe，Ni或FeB，其具有高的磁阻比。 NiFeX层中的X元素为含有5〜30原子％的Mg，Hf，Zr，Nb或Ta。 NiFeX厚度优选在20至40埃之间，以显着减少位线切换电流和短路位数。在替代实施例中，结晶层可以是Fe / NiFe双层。可选地，非晶层可以具有其中M1和M2是Mg，Hf，Zr，Nb或Ta的NiFeM1 / NiFeM2构型，M1不等于M2。在300℃至360℃退火，提供约150％的高磁阻比。

9. 发明授权

US08176622B2 Process for manufacturing a magnetic tunnel junction (MTJ) device 有权
标题翻译：制造磁性隧道结（MTJ）装置的方法
公开(公告)号：US08176622B2
公开(公告)日：2012-05-15
申请号：US12657775
申请日：2010-01-27
申请人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
发明人： Cheng T. Horng , Ru-Ying Tong , Chyu-Jiuh Torng , Witold Kula
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： H01F10/3254 , B82Y25/00 , G11B5/3163 , G11B5/3906 , G11C11/161 , H01F10/3281 , H01F10/3295 , H01F41/325 , H01L43/08 , H01L43/10 , H01L43/12 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052
摘要： A process for manufacturing a high performance MTJ it is described: A first cap layer of NiFeHf is deposited on the free layer, followed by a second cap layer of Ru on Ta. The device is then heated so that oxygen trapped in the free layer diffuses into the NiFeHf layer, thereby sharpening the interface between the tunnel barrier layer and the free layer.
摘要翻译：描述了一种用于制造高性能MTJ的方法：将NiFeHf的第一覆盖层沉积在自由层上，随后是Ta上的Ru的第二盖层。然后加热该装置，使得在自由层中捕获的氧气扩散到NiFeHf层中，从而锐化隧道势垒层和自由层之间的界面。

10. 发明授权

US08138562B2 Bit line preparation method in MRAM fabrication 有权
标题翻译： MRAM制造中的位线准备方法
公开(公告)号：US08138562B2
公开(公告)日：2012-03-20
申请号：US12589193
申请日：2009-10-20
申请人： Guomin Mao
发明人： Guomin Mao
IPC分类号： H01L29/82 , H01L21/00
CPC分类号： H01L27/222
摘要： A MRAM structure is disclosed that includes a metal contact bridge (MCB) which provides an electrical connection between a MTJ top electrode and an overlying bit line. The MCB has a width greater than a MTJ top electrode and serves as an etch stop during bit line etching to prevent sub-trenches from forming adjacent to the top electrode and causing shorts. MCBs also prevent insufficient etching that causes open circuits. A MCB is preferably a metal, metal compound, or alloy such as Ta with low resistivity and high conductivity. The MCB layer is patterned prior to using a dual damascene process to form a bit line contacting each MCB and a bit line pad connection to a word line pad. MCB thickness is thin enough to allow a strong bit line magnetic field for switching a free layer and large enough to function as an efficient oxide etch stop.
摘要翻译：公开了一种MRAM结构，其包括提供MTJ顶部电极和上覆位线之间的电连接的金属接触桥（MCB）。 MCB具有大于MTJ顶部电极的宽度，并且在位线蚀刻期间用作蚀刻停止以防止副沟槽邻近顶部电极形成并导致短路。 MCB还防止导致开路的不充分的蚀刻。 MCB优选为金属，金属化合物或诸如Ta的合金，具有低电阻率和高导电性。在使用双镶嵌工艺之前将MCB层图案化以形成接触每个MCB的位线和与字线焊盘的位线焊盘连接。 MCB厚度足够薄以允许强的位线磁场切换自由层并且足够大以用作有效的氧化物蚀刻停止。

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