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1. 发明申请

US20220341058A1 TREATING ARRANGEMENT WITH LOADING/UNLOADING GROUP AND EPITAXIAL REACTOR 有权
公开(公告)号：US20220341058A1
公开(公告)日：2022-10-27
申请号：US17763915
申请日：2020-10-02
申请人： LPE S.p.A.
发明人： Silvio Preti , Francesco Corea
IPC分类号： C30B35/00 , C30B25/02 , C23C16/458 , B08B5/04 , H01L21/687
摘要： The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) containing at least in part the loading/unloading group (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200); said loading/unloading group comprises a load-lock chamber (300A) and a preparation station (300B) associated with each other.

2. 发明申请

US20080199281A1 Vacuum System For Wafer Handling 审中-公开
标题翻译：晶圆处理真空系统
公开(公告)号：US20080199281A1
公开(公告)日：2008-08-21
申请号：US11912753
申请日：2005-05-26
申请人： Vincenzo Ogliari , Franco Preti
发明人： Vincenzo Ogliari , Franco Preti
IPC分类号： H01L21/68
CPC分类号： H01L21/6838
摘要： The present invention relates to a system for handling wafers (W) within a treatment apparatus (1) comprising a suction system (10) equipped with a suction inlet, a suction pipe (7) having a first end and a second end, said first end being connected to the suction inlet of the suction system (10), a tool (6) suitable for handling wafers (W) and for holding them by suction, and connected to the second end of the suction pipe (7), and a device for regulating the pressure in the suction pipe; the regulating device comprises a valve (8) connected to the suction pipe (7) and capable of opening when the pressure in the suction pipe (7) falls below a predetermined value.
摘要翻译：本发明涉及一种处理设备（1）内处理晶片（W）的系统，包括一个装有吸入口的抽吸系统（10），一个具有第一端和第二端的吸入管（7）端部连接到抽吸系统（10）的抽吸入口，适于处理晶片（W）并通过抽吸将其保持并连接到吸入管（7）的第二端的工具（6），以及用于调节吸入管中压力的装置; 所述调节装置包括连接到所述吸入管（7）并且当所述吸入管（7）中的压力低于预定值时能够打开的阀（8）。

3. 发明申请

US20220074048A1 REACTION CHAMBER FOR AN EPITAXIAL REACTOR OF SEMICONDUCTOR MATERIAL WITH NON-UNIFORM LONGITUDINAL SECTION AND REACTOR 有权
公开(公告)号：US20220074048A1
公开(公告)日：2022-03-10
申请号：US17414763
申请日：2019-10-17
申请人： LPE S.P.A.
发明人： Silvio Preti , Francesco Corea , Maurilio Meschia
IPC分类号： C23C16/458
摘要： The reaction chamber (100A) is used for a reactor for the deposition of semiconductor material on a substrate (62); it extends in a longitudinal direction and comprises a reaction and deposition zone (10) which extends in the longitudinal direction; this zone (10) is defined by susceptor elements (21A, 21B, 21C, 22A, 22B, 31, 32) adapted to be heated by electromagnetic induction; a first susceptor element (21A, 21B, 21C, 22A, 22B) is opposite to a substrate support element (61) of the chamber and has a hole (20) which extends in the longitudinal direction along its whole length; the first susceptor element (21A, 21B, 21C, 22A, 22B) has a non-uniform cross section that depends on its longitudinal position.

4. 发明申请

US20220074046A1 REACTION CHAMBER FOR A DEPOSITION REACTOR WITH INTERSPACE AND LOWER CLOSING ELEMENT AND REACTOR 有权
公开(公告)号：US20220074046A1
公开(公告)日：2022-03-10
申请号：US17420540
申请日：2020-01-07
申请人： LPE S.P.A. , DENSO CORPORATION
发明人： Francesco Corea , Danilo Crippa , Maurilio Meschia , Silvio Preti , Yuichiro Tokuda
IPC分类号： C23C16/44
摘要： The reaction chamber (100) is used for a deposition reactor of layers of semiconductor material on substrates; it comprises a tube (110) made of quartz and having a cylindrical shape and adapted to be positioned in use so that its axis (111) is vertical; the tube (110) has a cylindrical inner interspace (112) which extends along the entire length of the tube (110) and which is adapted to accommodate a flowing liquid; the chamber (100) further comprises an annular closing element (120) made of quartz and fixed to a first lower end of the tube (110) so as to close the interspace (112) preventing the liquid from flowing out of the interspace at the bottom; at the top, the closing element (120) has an annular recess (122) facing the interspace (112) so that the flowing liquid can reach the recess (122) at the bottom; the chamber (100) further comprises a set of internal conduits (130) internal to the interspace (112), wherein said internal conduits (130) extend from the first lower region of the tube (110) till a second upper region of the tube (110) to facilitate circulation of the flowing liquid in the interspace (112).

5. 发明授权

US10815585B2 Susceptor with substrate clamped by underpressure, and reactor for epitaxial deposition 有权
公开(公告)号：US10815585B2
公开(公告)日：2020-10-27
申请号：US16087174
申请日：2017-03-20
申请人： LPE S.p.A.
发明人： Vincenzo Ogliari , Silvio Preti
IPC分类号： C30B25/12 , C23C16/458
摘要： The susceptor for an epitaxial deposition reactor comprises a disc-shaped portion (11, 12) which is adapted to be placed horizontally and which at the top has at least one cylindrical pocket (200) where a substrate (100) to be subjected to an epitaxial deposition process is placed; the pocket (200) has a bottom; one or more conduits (13) fluidically connected to an intake system (300) open on the bottom of the pocket (200); when a substrate (100) is placed on the bottom of the pocket (200) and the intake system (300) is active, the substrate (100) remains adhering to the bottom of the pocket (200). In particular: the upper body 12) superiorly has the pocket (200), the conduits (13) vertically cross only the upper body (12), the conduits (13) are fluidically connected to a plenum (14) located between the lower body (11) and the upper body (12) below the pocket (200), the plenum (14) is fluidically connected to the intake system (300); whereby when a substrate (100) is placed on the bottom of the pocket (200) and the intake system (300) is active, the lower body (11) and the upper body (12) remain united.

6. 发明申请

US20100307417A1 Manufacturing device for silicon carbide single crystal 审中-公开
标题翻译：碳化硅单晶制造装置
公开(公告)号：US20100307417A1
公开(公告)日：2010-12-09
申请号：US12801225
申请日：2010-05-27
申请人： Jun Kojima , Yasuo Kitou , Sonia De Angelis , Ambrogio Peccenati , Giuseppe Tarenzi
发明人： Jun Kojima , Yasuo Kitou , Sonia De Angelis , Ambrogio Peccenati , Giuseppe Tarenzi
IPC分类号： C23C16/32
CPC分类号： C30B29/36 , C23C16/4402 , C30B25/14
摘要： A manufacturing device of a silicon carbide single crystal includes: a reaction chamber; a seed crystal arranged in the reaction chamber; and a heating chamber. The seed crystal is disposed on an upper side of the reaction chamber, and the gas is supplied from an under side of the reaction chamber. The heating chamber is disposed on an upstream side of a flowing passage of the gas from the reaction chamber. The heating chamber includes a hollow cylindrical member, a raw material gas inlet, a raw material gas supply nozzle and multiple baffle plates. The inlet introduces the gas into the hollow cylindrical member. The nozzle discharges the gas from the hollow cylindrical member to the reaction chamber. The baffle plates are arranged on the flowing passage of the gas between the inlet and the nozzle.
摘要翻译：碳化硅单晶的制造装置包括：反应室; 布置在反应室中的晶种; 和加热室。晶种设置在反应室的上侧，从反应室的下侧供给气体。加热室设置在来自反应室的气体的流动通道的上游侧。加热室包括中空圆柱形构件，原料气体入口，原料气体供应喷嘴和多个挡板。入口将气体引入中空圆柱形构件。喷嘴将气体从中空圆柱形构件排出到反应室。挡板设置在入口和喷嘴之间的气体的流动通道上。

7. 发明授权

US07314526B1 Reaction chamber for an epitaxial reactor 有权
标题翻译：用于外延反应器的反应室
公开(公告)号：US07314526B1
公开(公告)日：2008-01-01
申请号：US09807589
申请日：2000-03-17
申请人： Franco Preti , Vincenzo Ogliari , Giuseppe Tarenzi
发明人： Franco Preti , Vincenzo Ogliari , Giuseppe Tarenzi
IPC分类号： C23C16/44 , C23C16/458 , C23C16/455 , H01L21/306 , C23F1/00 , C23C16/24
CPC分类号： C30B25/14
摘要： Reaction chamer (10) for an epitaxial reactor comprising a belljar (14) made of insulating, transparent and chemically resistant material, a susceptor (24) provided with disk-shaped cavities (34a-n) for receiving wafers (36a-n) of material to be treated and having an insulating and chemically resistant plate (40) arranged above it, and a diffuser (54) consisting of a plurality of outlet pipes (106a-f) mounted on a cap (52) fixed to an upper opening (50) of the belljar (14).
摘要翻译：用于外延反应器的反应倒角（10）包括由绝缘的，透明的和耐化学腐蚀的材料制成的喇叭形（14），设置有用于接收材料晶片（36）的盘形空腔（34）的基座（24）被处理并具有布置在其上方的绝缘耐化学腐蚀板（40），以及散热器（54），其由安装在固定到上部开口（50）上的盖（52）上的多个出口管（106f1）组成，喇叭（14）。

8. 发明公开

US20230313410A1 METHOD FOR CVD DEPOSITION OF N-TYPE DOPED SILICON CARBIDE AND EPITAXIAL REACTOR 审中-公开
公开(公告)号：US20230313410A1
公开(公告)日：2023-10-05
申请号：US18024539
申请日：2021-09-09
申请人： LPE S.p.A.
发明人： Silvio Preti , Gianluca Cividini
IPC分类号： C30B25/14 , H01L21/02 , C30B29/36 , C30B25/12 , C30B25/18 , C30B25/08 , C23C16/32 , C23C16/458 , C23C16/455
CPC分类号： C30B25/14 , H01L21/02447 , H01L21/02529 , H01L21/02576 , H01L21/0262 , C30B29/36 , C30B25/12 , C30B25/183 , C30B25/08 , C23C16/325 , C23C16/4584 , C23C16/45502
摘要： The method serves for depositing a layer of silicon carbide with n-type doping onto a surface of a substrate placed horizontally on a rotating susceptor inside a reaction chamber by means of a CVD type process; the rotating susceptor is adapted to single-substrate support; the method includes introducing and flowing a gaseous mixture internally along the reaction chamber from a first side to a second side passing over a portion of a lower wall of said reaction chamber and then over said rotating susceptor supporting one substrate; the gaseous mixture comprises or consists of: one or more gases being precursor of silicon carbide to be deposited and a carrier gas and a precursor gas containing a substance adapted to give rise to n-type doping; the dopant substance is adapted to be subjected to pyrolysis catalysed by contact with an internal surface made of silicon carbide of said reaction chamber forming species with stoichiometry NHxCySiz where x and y and z are comprised between 0 and 3 and x+y+z>0, the reaction chamber is at a temperature comprised in the range between 1450° C. and 1800° C. and at a pressure comprised in the range between 5 kPa and 30 kPa; the substrate is placed inside the reaction chamber in a region where trends in availability respectively of Si, C and N are all decreasing and where temperature is within a deposition temperature range.

9. 发明申请

US20220333271A1 TREATING ARRANGEMENT WITH TRANSFER CHAMBER AND EPITAXIAL REACTOR 有权
公开(公告)号：US20220333271A1
公开(公告)日：2022-10-20
申请号：US17763890
申请日：2020-10-02
申请人： LPE S.p.A.
发明人： Silvio Preti , Francesco Corea
IPC分类号： C30B35/00 , H01L21/687 , H01L21/68 , H01L21/677 , C30B25/10
摘要： The treating arrangement (900) for an epitaxial reactor (1000) comprises: a reaction chamber (100) for treating substrates, a transfer chamber (200) adjacent to the reaction chamber (100), for transferring substrates placed over substrates support devices, a loading/unloading group (300) at least in part adjacent to the transfer chamber (200), arranged to contain a substrates support device with one or more substrates, a storage chamber (400) at least in part adjacent to the load-lock chamber (300), having a first storage zone (410) for treated and/or untreated substrates and a second storage zone (420) for substrates support devices without any substrate, at least one external robot (500) for transferring treated substrates, untreated substrates and substrates support devices without any substrate between said storage chamber (400) and said loading/unloading group (300), at least one internal robot (600) for transferring substrates support devices with one or more substrates between said loading/unloading group (300) and said reaction chamber (100) via said transfer chamber (200).

10. 发明申请

US20220025519A1 DEPOSITION REACTOR WITH INDUCTORS AND ELECTROMAGNETIC SHIELDS 有权
公开(公告)号：US20220025519A1
公开(公告)日：2022-01-27
申请号：US17277222
申请日：2019-10-24
申请人： LPE S.P.A.
发明人： Michele Forzan , Danilo Crippa , Silvio Preti
IPC分类号： C23C16/46 , H05B6/44
摘要： The reactor (100) for deposition of layers of semiconductor material on substrates, comprises: a reaction chamber (110), a susceptor assembly (120) located inside the reaction chamber, and a heating system (130) adapted to heat the susceptor assembly by electromagnetic induction; the heating system (130) comprises a first (131) inductor and a second (132) inductor and a power supply (135) adapted to electrically feed the first and second inductors (131, 132) with alternating currents that are distinct and independent from one another; the reactor (100) further comprises a shielding assembly (140) adapted to limit electromagnetic coupling between the first and the second inductors (131, 132).

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