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1. 发明授权

US4965133A Modifying agent for conductive substrate 失效
标题翻译：导电基板改性剂
公开(公告)号：US4965133A
公开(公告)日：1990-10-23
申请号：US444946
申请日：1989-12-04
申请人： Satoshi Ueyama , Satoru Isoda
发明人： Satoshi Ueyama , Satoru Isoda
IPC分类号： C07D475/14 , C25B3/04 , C25B11/04
CPC分类号： C07D475/14 , Y10T428/31504
摘要： A modifying agent for a conductive substrate comprises a flavin derivative. A flavin-modified electrode obtained through modification by the modifying agent is capable of reducing an electron transfer protein having a standard oxidation-reduction potential higher than, or on the positive side of, the standard oxidation-reduction potential of the flavin derivative but is incapable of oxidizing the electron transfer protein, and is therefor capable of controlling electron transport so that the electron transport takes place in only one direction. With this characteristic feature, the modified electrode is applicable to functional devices such as diodes, transistors and optical switch devices.
摘要翻译：导电性基材用改性剂含有黄素衍生物。通过改性剂改性获得的黄素改性电极能够还原具有比黄素衍生物的标准氧化还原电位高或者正侧的标准氧化还原电位的电子转移蛋白质，但是不能氧化电子转移蛋白，并且能够控制电子传输，使得电子传输仅在一个方向上发生。利用该特征，改性电极适用于诸如二极管，晶体管和光开关器件等功能器件。

2. 发明授权

US4861418A Method of manufacturing semiconductor crystalline layer 失效
标题翻译：半导体晶体层的制造方法
公开(公告)号：US4861418A
公开(公告)日：1989-08-29
申请号：US22402
申请日：1987-03-06
申请人： Tadashi Nishimura , Yasuo Inoue , Kazuyuki Sugahara , Shigeru Kusunoki
发明人： Tadashi Nishimura , Yasuo Inoue , Kazuyuki Sugahara , Shigeru Kusunoki
IPC分类号： H01L21/20 , H01L21/263 , H01L21/268 , H01L21/762 , H01L29/04
CPC分类号： H01L29/045 , H01L21/2026 , H01L21/268 , H01L21/76248 , Y10S117/904
摘要： A method of manufacturing a semiconductor crystalline layer comprising the following steps: a step of forming, on a single crystalline substrate composed of a semiconductor having a main face on face and having a diamond-type crystal structure, an orientation flat face in which the direction of the intersection with the main face makes a predetermined angle relative to the direction on the main face and which serves as a reference for defining the direction of arranging semiconductor chips formed on the substrate; a step of forming, on the main face of the substrate, an insulation layer at least a portion of which has an opening reaching the main face and which insulates the substrate at the region other than the opening; a step of forming a semiconductor layer composed of a polycrystalline or amorphous semiconductor on the surface of the opening and the insulation layer; a step of forming a reflectivity varying layer which is in the direction in parallel with or vertical to the intersection between the orientation flat face and the main face, has the width and the distance in a predetermined period and is set so as to show periodical reflectivity variation to the argon laser beams; and a step of scanning the argon laser beams under continuous irradiation by way of the reflectivity varying layer to the semiconductor layer in the direction identical with or at an angle within a certain permissible range to the direction of the main face or the direction equivalent thereto.
摘要翻译：一种制造半导体结晶层的方法，包括以下步骤：在由具有主面的具有金刚石型晶体结构的半导体构成的单晶衬底上形成取向平面其与主面的交点的方向相对于主面上的方向<110>成预定角度，并且作为用于限定形成在基板上的半导体芯片的排列方向的基准; 在所述基板的主面上形成绝缘层的步骤，所述绝缘层的至少一部分具有到达所述主面的开口，并且使所述基板与所述开口以外的区域绝缘; 在开口和绝缘层的表面上形成由多晶或非晶半导体构成的半导体层的步骤; 在与定向平面和主面之间的交叉部分平行或垂直的方向上形成反射率变化层的步骤具有在预定时间段内的宽度和距离，并且被设置为显示周期性反射率对氩激光束的变化; 以及通过所述反射率变化层在与所述主面或所述主面的方向<110>的一定允许范围内相同或成一定角度的方向将所述氩激光束扫描到所述半导体层的步骤相当于此。

3. 发明授权

US4870031A Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US4870031A
公开(公告)日：1989-09-26
申请号：US102655
申请日：1987-09-30
申请人： Kazuyuki Sugahara , Tadashi Nishimura , Shigeru Kusunoki , Yasuo Inoue
发明人： Kazuyuki Sugahara , Tadashi Nishimura , Shigeru Kusunoki , Yasuo Inoue
IPC分类号： H01L21/20 , H01L21/263 , H01L21/822 , H01L21/84 , H01L27/00
CPC分类号： H01L21/8221 , H01L21/2026 , Y10S117/904 , Y10S117/905 , Y10S148/09
摘要： In a method of manufacturing a semiconductor device comprising melting an amorphous or polycrystalline first semiconductor layer formed on the surface of a first dielectric layer by irradiating energy rays thereon, and converting the same into single crystals by the subsequent lowering of the temperature and forming a second dielectric layer and a second semiconductor layer on the first semiconductor layer. Energy rays are irradiated under the condition capable of melting the first semiconductor layer through the second semiconductor layer and the second dielectric layer and, after the completion of the conversion into single crystals, the second semiconductor layer and the second dielectric layer are eliminated through etching.
摘要翻译：在制造半导体器件的方法中，包括通过照射第一介电层的表面上的能量射线来熔化形成在第一介电层的表面上的非晶或多晶的第一半导体层，并且随后降低温度并将其转变为单晶电介质层和第一半导体层上的第二半导体层。在能够通过第二半导体层和第二电介质层熔化第一半导体层的条件下照射能量射线，并且在完成转换成单晶之后，通过蚀刻去除第二半导体层和第二电介质层。

4. 发明授权

US4795656A Cluster ion plating method for producing electrically conductive carbon film 失效
标题翻译：用于制备导电碳膜的簇离子电镀方法
公开(公告)号：US4795656A
公开(公告)日：1989-01-03
申请号：US183526
申请日：1988-04-14
申请人： Akira Mizoguchi , Jun Shioya , Yoichi Yamaguchi , Yoshinobu Ueba , Hironaga Matsubara
发明人： Akira Mizoguchi , Jun Shioya , Yoichi Yamaguchi , Yoshinobu Ueba , Hironaga Matsubara
IPC分类号： C23C14/06 , C23C14/22 , B05D3/06 , C23C14/00
CPC分类号： C23C14/221 , C23C14/0605
摘要： A carbon film having a large electrical conductivity is produced at a comparatively low substrate temperature by a method comprising forming the carbon film from a hydrocarbon by an ion beam method and heating the substrate at a temperature of 400.degree. C. to 1,200.degree. C.
摘要翻译：通过包括通过离子束法从烃形成碳膜并在400℃至1200℃的温度下加热基板的方法，在相对低的基板温度下产生具有大导电性的碳膜。

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