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1. 发明申请

US20120032151A1 COLOR CONVERSION FILM AND MULTICOLOR-EMITTING, ORGANIC ELECTROLUMINESCENT DEVICE COMPRISING THE COLOR CONVERSION FILM 有权
标题翻译：彩色转换膜和发光元件，包含彩色转换膜的有机电致发光器件
公开(公告)号：US20120032151A1
公开(公告)日：2012-02-09
申请号：US12747882
申请日：2009-01-21
申请人： Toshio Hama , Masaru Nagai , Chong Li , Koji Kawaguchi , Yuko Nakamata , Naoyuki Kanai
发明人： Toshio Hama , Masaru Nagai , Chong Li , Koji Kawaguchi , Yuko Nakamata , Naoyuki Kanai
IPC分类号： H01L51/52 , G02B5/20
CPC分类号： H01L51/504 , C09K11/06 , G02B5/223 , H01L27/322
摘要： A color conversion film is disclosed that absorbs light from an organic electroluminescent part emitting blue-green light and converts the light to visible light at a longer wavelength. The color conversion film includes two different dyes. A first dye is a polymer dye with an average molecular weight of 1000 to 1,000,000 that absorbs light incident on the color conversion film and transfers the energy of the light to a second dye. The second dye is a dye that receives the energy from the first dye and emits light. With a multicolor-emitting, organic electroluminescent device including the color conversion film, it is possible to achieve excellent conversion efficiency without increasing the thickness of the color conversion film as in a conventional device using a binder resin.
摘要翻译：公开了一种吸收来自发射蓝绿光的有机电致发光部分的光并将光转换成较长波长的可见光的彩色转换膜。颜色转换膜包括两种不同的染料。第一染料是平均分子量为1000至1,000,000的聚合物染料，其吸收入射在颜色转换膜上的光并将光的能量转移到第二染料。第二种染料是从第一种染料接收能量并发光的染料。对于包含彩色转换膜的多色发光的有机电致发光器件，如使用粘合剂树脂的常规器件那样，可以实现优异的转换效率，而不会增加颜色转换膜的厚度。

2. 发明申请

US20110257912A1 APPARATUS FOR ANALYSIS AND EVALUATION OF CHARACTERISTICS OF SERIES-CONNECTED SOLAR BATTERY CELLS 失效
标题翻译：串联太阳能电池的特性分析与评估装置
公开(公告)号：US20110257912A1
公开(公告)日：2011-10-20
申请号：US13026009
申请日：2011-02-11
申请人： Hideyo NAKAMURA
发明人： Hideyo NAKAMURA
IPC分类号： G06F19/00
CPC分类号： G06F17/5018 , H02S50/10
摘要： An apparatus for estimating and evaluating characteristics of large-area series-connected solar battery cells from a measured current-voltage characteristic of a small-area single cell, includes an analysis model construction unit, an analysis operation unit and an evaluation unit. The construction unit reads shape parameters and material physical properties of the cells and automatically constructs a finite element method model. The operation unit obtains a current at a voltage based on the measured characteristic, sets the current as a current load, calculates potential distributions of transparent electrode and rear electrode of the cells, corrects the current load based on a difference between the distributions and the measured characteristic, recalculates the distributions based on the corrected current load, and repeats the recalculation until the distributions converge. The evaluation unit evaluates whether a converged calculation result is a pattern exhibiting a desired current-voltage characteristic of the cells.
摘要翻译：一种用于从小区域单电池的测量电流 - 电压特性估计和评估大面积串联太阳能电池单元的特性的装置，包括分析模型构建单元，分析运算单元和评估单元。施工单位读取细胞的形状参数和材料物理性质，并自动构建有限元方法模型。操作单元基于测量特性获得电压，将电流设置为电流负载，计算电池的透明电极和后电极的电位分布，根据分布和测量值之间的差异校正电流负载特征，基于校正的当前负载重新计算分布，并重复重新计算直到分布收敛。评估单元评估会聚的计算结果是否是呈现电池的期望的电流 - 电压特性的图案。

3. 发明授权

US07982426B2 Electric power system 有权
标题翻译：电力系统
公开(公告)号：US07982426B2
公开(公告)日：2011-07-19
申请号：US11716387
申请日：2007-03-09
申请人： Junichi Itoh , Akio Toba , Kouetsu Fujita
发明人： Junichi Itoh , Akio Toba , Kouetsu Fujita
IPC分类号： H02P27/04
CPC分类号： H02P27/04 , B60L15/007 , B60L2210/30 , B60L2210/40 , B60L2220/50 , B60L2240/526 , B60L2240/527 , H02M7/5387 , H02M2001/007 , H02P2209/01 , Y02T10/641 , Y02T10/644 , Y02T10/645 , Y02T10/7241
摘要： An electric power system comprises an AC motor, a first DC voltage unit, an inverter as a power converter, being connected between the AC motor and first DC voltage unit, for exchanging power between these two components; and a controlled DC power supply which is connected between an arbitrary spot of a coil of the AC motor and a positive or negative electrode of the first DC voltage unit and which connects at least one semiconductor switching element and a battery as a second DC voltage unit in series.
摘要翻译：电力系统包括交流电动机，第一直流电压单元，作为电力转换器的逆变器，连接在交流电动机和第一直流电压单元之间，用于在这两个部件之间交换电力; 以及受控直流电源，其连接在所述交流电动机的线圈的任意点与所述第一直流电压单元的正极或负极之间，并且连接至少一个半导体开关元件和电池作为第二直流电压单元系列。

4. 发明申请

US20110109611A1 SURFACE-EMITTING DISPLAY DEVICE 有权
标题翻译：表面发射显示装置
公开(公告)号：US20110109611A1
公开(公告)日：2011-05-12
申请号：US12935572
申请日：2009-03-26
申请人： Hideyo Nakamura
发明人： Hideyo Nakamura
IPC分类号： G06F3/038 , H01J1/62
CPC分类号： H01L27/3279 , G09G3/20 , G09G3/3225 , G09G2300/0426 , G09G2300/0439 , G09G2320/0223 , G09G2330/02 , H01L2251/5315
摘要： This invention provides a surface-emitting display device comprising a plurality of power supply lines 21 connected to a plurality of pixel circuits, respectively, and a power supply bus 22 having a power supply terminal 23 and connected to end portions of the plurality of power supply lines 21 at a prescribed interval, the power supply bus 22 having one or more slits 71, 72 extending along the length direction thereof from the power supply terminal 23 toward the end portions.
摘要翻译：本发明提供了一种表面发射显示装置，其包括分别连接到多个像素电路的多个电源线21和具有电源端子23并且连接到多个电源的端部的电源总线22 线21以规定的间隔，电源总线22具有沿着其长度方向从电源端子23向端部延伸的一个或多个狭缝71,72。

5. 发明申请

US20110109345A1 LOGIC CIRCUIT 有权
标题翻译：逻辑电路
公开(公告)号：US20110109345A1
公开(公告)日：2011-05-12
申请号：US13004480
申请日：2011-01-11
申请人： Haruo KAWAKAMI
发明人： Haruo KAWAKAMI
IPC分类号： H03K19/003
CPC分类号： H03K19/02 , H03K3/313
摘要： A logic circuit includes two two-terminal switching devices and receives first and second pulses as inputs. Each of the two devices has two different stable resistivity values for each applied voltage that is greater than a first threshold voltage (Vth1) and is smaller than a second threshold voltage (Vth2) that is larger than Vth1. Each switching device, when a voltage less than or equal to Vth1 is applied, becomes in a first state having the higher resistivity of the two resistivity values, whereas when a voltage more than or equal to Vth2 is applied, becomes in a second state having the lower resistivity of the two resistivity values. The two devices are connected in series in a direction with uniform polarity to each other. The first and second states are selectively generated in the first and second devices by a combination of inputs of the first and second pulses.
摘要翻译：逻辑电路包括两个两端开关器件，并接收第一和第二脉冲作为输入。两个装置中的每一个对于大于第一阈值电压（Vth1）的每个施加的电压具有两个不同的稳定电阻率值，并且小于大于Vth1的第二阈值电压（Vth2）。当施加小于或等于Vth1的电压时，每个开关装置变为具有两个电阻率值的较高电阻率的第一状态，而当施加大于或等于Vth2的电压时，变为具有两个电阻率值的电阻率较低。两个装置在彼此具有均匀极性的方向上串联连接。第一和第二状态通过第一和第二脉冲的输入的组合在第一和第二装置中选择性地产生。

6. 发明授权

US07851528B2 Flame-retardant resin processed article 有权
标题翻译：阻燃树脂加工制品
公开(公告)号：US07851528B2
公开(公告)日：2010-12-14
申请号：US11915505
申请日：2006-05-23
申请人： Toshiyuki Kanno , Yoshinobu Sugata , Hironori Yanase , Kiyotaka Shigehara
发明人： Toshiyuki Kanno , Yoshinobu Sugata , Hironori Yanase , Kiyotaka Shigehara
IPC分类号： C08K5/5313 , C08K5/49
CPC分类号： C08K5/5313 , C08K5/5399 , C09K21/12
摘要： A flame retardant resin treated article that excels in flame retardancy and is free from bleedout. A resin composition comprising a flame retarder of metal phosphinate represented by the general formula: (I) (in the formula, each of R1 and R2 is a C1-C6 alkyl or an aryl group having 12 or less carbon atoms; M is calcium, aluminum or zinc; and when M=aluminum, m=3, and otherwise m=2), a reactive organophosphorus flame retarder having an unsaturated group at its terminal and a resin wherein the total content of metal phosphinate and reactive organophosphorus flame retarder is in the range of 5 to 30 mass % is provided in molded form or coating form.
摘要翻译：阻燃树脂处理制品，阻燃性优异，无渗漏。包含由通式（I）表示的金属次膦酸化合物的阻燃剂的树脂组合物（在该式中，R 1和R 2各自是C 1 -C 6烷基或具有12个或更少碳原子的芳基; M是钙，铝或锌;当M =铝，m = 3，m = 2）时，在其末端具有不饱和基团的反应性有机磷阻燃剂和其中金属次膦酸盐和反应性有机磷阻燃剂的总含量为 5〜30质量％的范围以成形或涂布形式提供。

7. 发明申请

US20100264455A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100264455A1
公开(公告)日：2010-10-21
申请号：US12824541
申请日：2010-06-28
申请人： Haruo NAKAZAWA , Kazuo SHIMOYAMA , Manabu TAKEI
发明人： Haruo NAKAZAWA , Kazuo SHIMOYAMA , Manabu TAKEI
IPC分类号： H01L29/739 , H01L29/06
CPC分类号： H01L29/0661 , H01L29/045 , H01L29/0615 , H01L29/0657 , H01L29/66333 , H01L29/7395
摘要： On the top surface of a thin semiconductor wafer, top surface structures forming a semiconductor chip are formed. The top surface of the wafer is affixed to a supporting substrate with a double-sided adhesive tape. Then, from the bottom surface of the thin semiconductor wafer, a trench, which becomes a scribing line, is formed by wet anisotropic etching so that side walls of the trench are exposed. On the side walls of the trench with the crystal face exposed, an isolation layer with a conductivity type different from that of the semiconductor wafer for holding a reverse breakdown voltage is formed simultaneously with a collector region of the bottom surface diffused layer by ion implantation, followed by annealing with laser irradiation. The side walls form a substantially V-shaped or trapezoidal-shaped cross section, with an angle of the side wall relative to the supporting substrate being 30-70°. The double-sided adhesive tape is then removed from the top surface to produce semiconductor chips. With such a manufacturing method, a reverse-blocking semiconductor device having high reliability can be formed.
摘要翻译：在薄的半导体晶片的顶表面上形成形成半导体芯片的顶表面结构。晶片的上表面用双面胶带固定在支撑基板上。然后，从薄的半导体晶片的底面开始，通过湿式各向异性蚀刻形成成为刻划线的沟槽，使得沟槽的侧壁露出。在暴露了晶面的沟槽的侧壁上，通过离子注入与底面扩散层的集电极区域同时形成具有不同于用于保持反向击穿电压的半导体晶片的导电类型的隔离层，然后用激光照射退火。侧壁形成大致V形或梯形形状的横截面，侧壁相对于支撑基底的角度为30-70°。然后从上表面去除双面胶带以制造半导体芯片。通过这样的制造方法，可以形成具有高可靠性的反向阻挡半导体器件。

8. 发明授权

US07786470B2 Switching element 失效
标题翻译：开关元件
公开(公告)号：US07786470B2
公开(公告)日：2010-08-31
申请号：US10545854
申请日：2004-02-17
申请人： Haruo Kawakami , Hisato Kato , Masami Kuroda , Nobuyuki Sekine , Keisuke Yamashiro
发明人： Haruo Kawakami , Hisato Kato , Masami Kuroda , Nobuyuki Sekine , Keisuke Yamashiro
IPC分类号： H01L35/24
CPC分类号： G11C13/02 , C07D495/04 , H01L27/28 , H01L51/0051 , H01L51/0059 , H01L51/0067 , H01L51/0068 , H01L51/0583
摘要： The present invention provides a switching element that has a stable bistable characteristic and a high transition voltage and demonstrates excellent cyclic performance. The switching element has two stable resistance values with respect to the voltage applied between electrodes, wherein a first electrode layer, an organic bistable material layer, and a second electrode layer are successively formed as thin films on a substrate and the organic bistable material constituting the organic bistable material layer is a quinomethane-based compound or a monoquinomethane-based compound. A metal constituting the second electrode layer is diffused into the organic bistable material layer. It is preferred that the second electrode layer be formed by vapor deposition and the temperature of the substrate during the vapor deposition be 30-150° C.
摘要翻译：本发明提供了具有稳定的双稳态特性和高跃迁电压的开关元件，并表现出优异的循环性能。开关元件相对于施加在电极之间的电压具有两个稳定的电阻值，其中第一电极层，有机双稳态材料层和第二电极层在基板上依次形成为薄膜，构成有机双稳态材料的有机双稳态材料有机双稳态材料层是基于喹啉的化合物或基于单甲基的化合物。构成第二电极层的金属被扩散到有机双稳态材料层中。优选通过气相沉积形成第二电极层，并且在气相沉积期间基板的温度为30-150℃。

9. 发明申请

US20100041228A1 Method of manufacturing a wiring board 有权
标题翻译：制造布线板的方法
公开(公告)号：US20100041228A1
公开(公告)日：2010-02-18
申请号：US12585913
申请日：2009-09-29
申请人： Kenji Okamoto
发明人： Kenji Okamoto
IPC分类号： H01L21/768
CPC分类号： H05K3/24 , H01L23/3735 , H01L2224/45124 , H01L2224/48091 , H01L2924/1305 , H01L2924/13055 , H01L2924/3011 , H05K1/0203 , H05K1/0263 , H05K1/0306 , H05K1/056 , H05K2203/1344 , Y10T29/4913 , Y10T29/49155 , H01L2924/00014 , H01L2924/00
摘要： In a method of manufacturing a wiring board, a basic circuit pattern is formed on an insulating plate, and a metal layer is formed on the basic circuit pattern by cold spraying to thereby form a built-up circuit pattern on the basic circuit pattern.
摘要翻译：在布线基板的制造方法中，在绝缘板上形成基本电路图案，通过冷喷镀在基本电路图案上形成金属层，从而在基本电路图案上形成积层电路图形。

10. 发明申请

US20100019250A1 SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME 有权
标题翻译：半导体器件及其形成方法
公开(公告)号：US20100019250A1
公开(公告)日：2010-01-28
申请号：US12574805
申请日：2009-10-07
申请人： Shun-Ichi NAKAMURA , Yoshiyuki YONEZAWA
发明人： Shun-Ichi NAKAMURA , Yoshiyuki YONEZAWA
IPC分类号： H01L29/78 , H01L29/24 , H01L21/04
CPC分类号： H01L29/7813 , H01L29/0619 , H01L29/0649 , H01L29/0657 , H01L29/0661 , H01L29/0878 , H01L29/1608 , H01L29/4236 , H01L29/42368 , H01L29/4238 , H01L29/66068 , H01L29/7811
摘要： A semiconductor device and a method of forming thereof has a base body has a field stopping layer, a drift layer, a current spreading layer, a body region, and a source contact region layered in the order on a substrate. A trench that reaches the field stopping layer or the substrate is provided. A gate electrode is provided in the upper half section in the trench. In a section deeper than the position of the gate electrode in the trench, an insulator is buried that has a normal value of insulation breakdown electric field strength equal to or greater than the value of the insulation breakdown electric field strength of the semiconductor material of the base body. This inhibits short circuit between a gate and a drain due to insulation breakdown of an insulator film at the bottom of the trench to realize a high breakdown voltage in a semiconductor device using a semiconductor material such as SiC. The sidewall surfaces of the trench located below the gate electrode is inclined to form a trapezoidal profile.
摘要翻译：半导体器件及其形成方法具有在基板上依次层叠的场阻挡层，漂移层，电流扩展层，体区域和源极接触区域。提供到达场停止层或基板的沟槽。栅极电极设置在沟槽中的上半部分中。在比沟槽中的栅电极的位置更深的部分中，埋入绝缘体的绝缘击穿电场强度的正常值等于或大于绝缘击穿电场强度的绝缘击穿电场强度基体由于沟槽底部的绝缘体膜的绝缘击穿，这就抑制了栅极和漏极之间的短路，从而在使用诸如SiC的半导体材料的半导体器件中实现高的击穿电压。位于栅电极下方的沟槽的侧壁表面倾斜以形成梯形轮廓。

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