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81. 发明授权

US07354651B2 Bond coat for corrosion resistant EBC for silicon-containing substrate and processes for preparing same 有权
标题翻译：用于含硅基材的耐腐蚀EBC粘结涂层及其制备方法
公开(公告)号：US07354651B2
公开(公告)日：2008-04-08
申请号：US11150097
申请日：2005-06-13
申请人： Brian Thomas Hazel , Irene Spitsberg , Brett Allen Boutwell
发明人： Brian Thomas Hazel , Irene Spitsberg , Brett Allen Boutwell
IPC分类号： B32B9/04 , B32B13/04 , B32B15/04 , B32B5/14 , F01D5/14
CPC分类号： C23C4/02 , C04B41/009 , C04B41/52 , C04B41/89 , C23C28/321 , C23C28/325 , C23C28/345 , C23C28/3455 , Y10T428/12611 , Y10T428/12674 , Y10T428/24967 , Y10T428/263 , C04B41/5071 , C04B41/0072 , C04B41/4558 , C04B41/5035 , C04B41/5024 , C04B41/4529 , C04B41/5031 , C04B41/4527 , C04B41/5042 , C04B41/522 , C04B35/565 , C04B35/584 , C04B35/806
摘要： An article comprising a silicon-containing substrate, a silicide-containing bond coat layer overlying the substrate, and an environmental barrier coating (EBC) overlying the bond coat layer, wherein the EBC comprises a corrosion resistant outer layer comprising a corrosion resistant metal silicate. A process is also provided for forming the corrosion resistant outer layer over the silicide-containing bond coat layer.
摘要翻译：包含含硅基材，覆盖在基材上的含硅化物粘合涂层和超过粘合涂层的环境阻挡涂层（EBC）的制品，其中EBC包括耐腐蚀外层，其包含耐腐蚀金属硅酸盐。还提供了用于在含硅化物的粘合涂层上形成耐腐蚀外层的工艺。

82. 发明申请

US20070122635A1 Bonding Structure With Buffer Layer And Method Of Forming The Same 失效
标题翻译：具有缓冲层的结合结构及其形成方法
公开(公告)号：US20070122635A1
公开(公告)日：2007-05-31
申请号：US11619612
申请日：2007-01-04
申请人： Su-Tsai Lu , Shu-Ming Chang , Shyh-Ming Chang , Yao-Sheng Lin , Yuan-Chang Huang
发明人： Su-Tsai Lu , Shu-Ming Chang , Shyh-Ming Chang , Yao-Sheng Lin , Yuan-Chang Huang
IPC分类号： B32B13/04
CPC分类号： B32B15/08 , B32B7/12 , B32B9/005 , B32B15/20 , B32B27/281 , B32B27/283 , B32B2457/08 , B32B2457/14 , H01L24/11 , H01L24/13 , H01L24/81 , H01L2224/05001 , H01L2224/05022 , H01L2224/05124 , H01L2224/05147 , H01L2224/05572 , H01L2224/056 , H01L2224/05624 , H01L2224/05644 , H01L2224/05647 , H01L2224/13099 , H01L2224/136 , H01L2224/16 , H01L2224/81136 , H01L2224/81193 , H01L2224/81201 , H01L2224/8123 , H01L2224/81801 , H01L2224/81894 , H01L2924/0001 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/09701 , H01L2924/14 , H01L2924/15787 , H01L2924/3011 , Y10T428/24917 , Y10T428/31667 , H01L2924/00014 , H01L2924/00
摘要： A bonding structure with a buffer layer, and a method of forming the same are provided. The bonding structure comprises a first substrate with metal pads thereon, a protection layer covered on the surface of the substrate, a first adhesive metal layer formed on the metal pads, a buffer layer coated on the protection layer and the metal pads, a first metal layer covered on the buffer layer, and a second substrate with electrodes and a bonding layer thereon. The first metal layer, the electrodes and the bonding layer are bonded to form the bonding structure. Direct bonding can be performed through surface activation or heat pressure. The method uses fewer steps and is more reliable. The temperature required for bonding the structure is lower. The bonding density between the contacted surfaces is increased to a fine pitch. The quality at the bonding points is increased because fewer contaminations between the contacted surfaces are generated.
摘要翻译：提供具有缓冲层的接合结构及其形成方法。接合结构包括其上具有金属焊盘的第一衬底，覆盖在衬底表面上的保护层，形成在金属焊盘上的第一粘合金属层，涂覆在保护层上的缓冲层和金属焊盘，第一金属覆盖在缓冲层上的第二基板和其上具有电极和接合层的第二基板。第一金属层，电极和接合层被接合以形成接合结构。可以通过表面活化或热压直接粘合。该方法使用较少的步骤并且更可靠。粘结结构所需的温度较低。接触表面之间的结合密度增加到细间距。增加接合点的质量，因为产生了接触表面之间的较少的污染物。

83. 发明申请

US20060288928A1 Perovskite-based thin film structures on miscut semiconductor substrates 审中-公开
标题翻译：在半导体衬底上的基于钙钛矿的薄膜结构
公开(公告)号：US20060288928A1
公开(公告)日：2006-12-28
申请号：US11149951
申请日：2005-06-10
申请人： Chang-Beom Eom , Darrell Schlom
发明人： Chang-Beom Eom , Darrell Schlom
IPC分类号： B32B9/00 , B32B19/00 , B32B13/04 , C30B23/00 , C30B28/14 , C30B25/00 , C30B28/12
CPC分类号： C30B29/22 , C30B23/02 , H01L41/0815 , H01L41/1875 , H01L41/1878 , H01L41/319
摘要： A perovskite-based thin film structure includes a semiconductor substrate layer, such as a crystalline silicon layer, having a top surface cut at an angle to the (001) crystal plane of the crystalline silicon. A perovskite seed layer is epitaxially grown on the top surface of the substrate layer. An overlayer of perovskite material is epitaxially grown above the seed layer. In some embodiments the perovskite overlayer is a piezoelectric layer grown to a thickness of at least 0.5 μm and having a substantially pure perovskite crystal structure, preferably substantially free of pyrochlore phase, resulting in large improvements in piezoelectric characteristics as compared to conventional thin film piezoelectric materials.
摘要翻译：钙钛矿型薄膜结构包括具有与晶体硅的（001）晶面成角度切割的顶表面的诸如晶体硅层的半导体衬底层。在基底层的顶面上外延生长钙钛矿种子层。在种子层上外延生长钙钛矿材料的覆层。在一些实施方案中，钙钛矿覆盖层是生长至至少0.5μm厚度且具有基本上纯的钙钛矿晶体结构，优选基本上不含烧绿石相的压电层，与常规薄膜压电材料相比，导致压电特性的显着改善。

84. 发明申请

US20060280954A1 Corrosion resistant sealant for outer EBL of silicon-containing substrate and processes for preparing same 审中-公开
标题翻译：含硅基材外层EBL用耐腐蚀密封剂及其制备方法
公开(公告)号：US20060280954A1
公开(公告)日：2006-12-14
申请号：US11150099
申请日：2005-06-13
申请人： Irene Spitsberg , Brian Hazel
发明人： Irene Spitsberg , Brian Hazel
IPC分类号： B32B13/04 , B32B9/00 , B32B19/00 , B05D5/12 , B05D1/36 , B05D3/02 , B05D1/08
CPC分类号： C23C4/02 , C04B41/009 , C04B41/52 , C04B41/89 , C23C4/18 , C23C28/042 , C23C28/048 , C23C28/322 , C23C28/345 , C23C28/3455 , C23C28/36 , C04B41/0072 , C04B41/4558 , C04B41/5035 , C04B41/53 , C04B41/5037 , C04B41/4582 , C04B41/5024 , C04B41/4537 , C04B41/5031 , C04B41/4539 , C04B41/5032 , C04B41/522 , C04B41/4529 , C04B41/4527 , C04B41/5042 , C04B35/565 , C04B35/584 , C04B35/806
摘要： An article comprising a silicon-containing substrate, an environmental barrier coating (EBC) overlying the substrate, wherein the EBC comprises a higher metal silicate-containing outer barrier layer; and a corrosion resistant alumina/aluminate sealant for the higher metal silicate-containing outer barrier layer. A process is also provided for forming a corrosion resistant alumina/aluminate sealant layer over the higher metal silicate-containing outer barrier layer. Also provided is an alternative process for treating a porous higher metal silicate-containing outer barrier layer with a liquid composition comprising an corrosion resistant alumina/aluminate sealant precursor to infiltrate the porous higher metal silicate-containing outer barrier layer with the alumina/aluminate sealant precursor in an amount sufficient to provide, when converted to the corrosion resistant alumina/aluminate sealant, protection of the environmental barrier coating against environmental attack; and converting the infiltrated alumina/aluminate sealant precursor within the porous higher metal silicate-containing outer barrier layer to the corrosion resistant alumina/aluminate sealant.
摘要翻译：一种制品，其包含含硅基材，覆盖所述基材的环境阻挡涂层（EBC），其中所述EBC包含较高含金属硅酸盐的外阻挡层; 和用于较高含金属硅酸盐的外阻挡层的耐腐蚀氧化铝/铝酸盐密封剂。还提供了一种用于在高含金属硅酸盐的外阻挡层上形成耐腐蚀氧化铝/铝酸盐密封剂层的方法。还提供了一种用含有耐腐蚀氧化铝/铝酸盐密封剂前体的液体组合物来处理含多孔的高含金属硅酸盐的外部阻隔层的替代方法，以用氧化铝/铝酸盐密封剂前体渗透含多孔的高含金属硅酸盐的外部阻隔层其量足以提供，当转化为耐腐蚀的氧化铝/铝酸盐密封剂时，保护环境屏障涂层免受环境攻击; 并将渗透的含氧化铝/铝酸盐密封剂前体在含多孔高含金属硅酸盐的外阻挡层内转化成耐蚀氧化铝/铝酸盐密封剂。

85. 发明申请

US20060280952A1 Bond coat for corrosion resistant EBC for silicon-containing substrate and processes for preparing same 有权
标题翻译：用于含硅基材的耐腐蚀EBC粘结涂层及其制备方法
公开(公告)号：US20060280952A1
公开(公告)日：2006-12-14
申请号：US11150097
申请日：2005-06-13
申请人： Brian Hazel , Irene Spitsberg , Brett Boutwell
发明人： Brian Hazel , Irene Spitsberg , Brett Boutwell
IPC分类号： B32B13/04 , B32B9/00 , B32B19/00 , B05D1/08 , B05D3/02 , B05D1/12
CPC分类号： C23C4/02 , C04B41/009 , C04B41/52 , C04B41/89 , C23C28/321 , C23C28/325 , C23C28/345 , C23C28/3455 , Y10T428/12611 , Y10T428/12674 , Y10T428/24967 , Y10T428/263 , C04B41/5071 , C04B41/0072 , C04B41/4558 , C04B41/5035 , C04B41/5024 , C04B41/4529 , C04B41/5031 , C04B41/4527 , C04B41/5042 , C04B41/522 , C04B35/565 , C04B35/584 , C04B35/806
摘要： An article comprising a silicon-containing substrate, a silicide-containing bond coat layer overlying the substrate, and an environmental barrier coating (EBC) overlying the bond coat layer, wherein the EBC comprises a corrosion resistant outer layer comprising a corrosion resistant metal silicate. A process is also provided for forming the corrosion resistant outer layer over the silicide-containing bond coat layer.
摘要翻译：包含含硅基材，覆盖在基材上的含硅化物粘合涂层和超过粘合涂层的环境阻挡涂层（EBC）的制品，其中EBC包括耐腐蚀外层，其包含耐腐蚀金属硅酸盐。还提供了用于在含硅化物的粘合涂层上形成耐腐蚀外层的工艺。

86. 发明申请

US20060216514A1 Diamond film-forming silicon and its manufacturing method 审中-公开
标题翻译：金刚石成膜硅及其制造方法
公开(公告)号：US20060216514A1
公开(公告)日：2006-09-28
申请号：US10540640
申请日：2003-12-24
申请人： Hiroyuki Fujimura , Roberto Serikawa , Naoki Ishikawa , Takahiro Mishima
发明人： Hiroyuki Fujimura , Roberto Serikawa , Naoki Ishikawa , Takahiro Mishima
IPC分类号： C23C16/00 , B32B9/00 , B32B13/04
CPC分类号： C30B25/18 , C23C16/27 , C23C16/545 , C30B25/02 , C30B29/04 , Y10T428/30
摘要： The present invention intends to provide a diamond-coated silicon to be used in an industrially applicable diamond electrode. A diamond-coated silicon comprising a silicon substrate having a thickness of 500 μm or less is coated at least partially with electrically conductive diamond. The silicon substrate having a thickness of 500 μm or less is manufactured by the plate-like crystal growth process, and then the silicon substrate is coated with the electrically conductive diamond by the chemical vapor deposition process to manufacture the diamond-coated silicon. The diamond-coated silicon is flexible and can be stuck to an electrically conductive support substrate, and thereby a large area electrode and a three-dimensional electrode structure can be readily obtained.
摘要翻译：本发明旨在提供用于工业上应用的金刚石电极中的金刚石涂层的硅。包含厚度为500μm或更小的硅衬底的金刚石涂覆的硅至少部分地涂覆有导电金刚石。通过板状晶体生长工艺制造厚度为500μm或更小的硅衬底，然后通过化学气相沉积工艺用导电金刚石涂覆硅衬底，以制造金刚石涂覆的硅。金刚石涂覆的硅是柔性的并且可以粘附到导电支撑衬底上，从而可以容易地获得大面积电极和三维电极结构。

87. 发明申请

US20060196425A1 Reflectors, substrate processing apparatuses and methods for the same 审中-公开
标题翻译：反射器，基板处理装置及其方法
公开(公告)号：US20060196425A1
公开(公告)日：2006-09-07
申请号：US11350795
申请日：2006-02-10
申请人： Sung-Wook Hwang , Chul-Ho Shin
发明人： Sung-Wook Hwang , Chul-Ho Shin
IPC分类号： C23C16/00 , B32B13/04 , B32B9/00 , C23F1/00 , H01L21/306 , B32B15/04 , H05H1/24 , B32B19/00
CPC分类号： H01J37/32633 , C23F4/00 , H01J37/32357
摘要： A substrate processing apparatus may include a processing chamber including a plasma generating unit arranged in an upper region thereof. A grid system, which may extract ions from plasma formed by the plasma generating unit and may accelerate the ions to have substantially uniform directivity. The grid system may be positioned below the plasma generating unit. A reflector may be arranged below the grid system and may include parallel reflecting plates for converting the ions accelerated from the grid system into neutral beams.
摘要翻译：基板处理装置可以包括处理室，其包括布置在其上部区域中的等离子体产生单元。栅格系统，其可以从由等离子体发生单元形成的等离子体提取离子，并且可以加速离子以具有基本均匀的方向性。栅格系统可以位于等离子体生成单元的下方。反射器可以布置在栅格系统下方，并且可以包括用于将从栅格系统加速的离子转换成中性光束的平行反射板。

88. 发明申请

US20060188736A1 DIFFUSION BARRIER FOR ASSEMBLIES WITH METALLIC AND SILICON-CONTAINING COMPONENTS AND METHOD THEREFOR 审中-公开
标题翻译：含有金属和含硅组分的组件的扩散障碍及其方法
公开(公告)号：US20060188736A1
公开(公告)日：2006-08-24
申请号：US10906405
申请日：2005-02-18
申请人： Krishan Luthra , Douglas McKee
发明人： Krishan Luthra , Douglas McKee
IPC分类号： B32B13/04 , B32B15/04 , B32B19/00
CPC分类号： C04B41/85 , C04B41/009 , C04B41/4527 , C23C4/02 , C23C4/11 , C23C28/3215 , C23C28/3455 , F01D5/288 , F01D9/042 , F01D11/08 , F01D11/12 , F01D25/24 , F01D25/246 , F23M2900/05004 , F23R3/007 , Y02T50/67 , Y02T50/672 , Y02T50/6765 , C04B41/5024 , C04B41/5037 , C04B41/5027 , C04B35/565 , C04B35/58 , C04B35/584 , C04B35/806 , C04B35/573
摘要： A method for inhibiting diffusion of silicon into a support structure from a component formed of a silicon-containing material, and an assembly formed thereby. The component is supported and contacted by the support structure so as to define a contact interface therebetween. An barrier coating is present on the component and/or the support structure, so as to be disposed at the contact interface to prevent direct physical contact between the silicon-containing material and the superalloy substrate.
摘要翻译：一种用于抑制硅从由含硅材料形成的部件扩散到支撑结构中的方法，以及由此形成的组件。该部件由支撑结构支撑并接触，以便在它们之间限定接触界面。在组件和/或支撑结构上存在阻挡涂层，以便设置在接触界面处以防止含硅材料和超合金基底之间的直接物理接触。

89. 发明申请

US20060121291A1 Manufacturing process for annealed wafer and annealed wafer 审中-公开
标题翻译：退火晶圆和退火晶圆的制造工艺
公开(公告)号：US20060121291A1
公开(公告)日：2006-06-08
申请号：US11265129
申请日：2005-11-03
申请人： Yoshinori Hayamizu , Satoshi Tobe , Norihiro Kobayashi
发明人： Yoshinori Hayamizu , Satoshi Tobe , Norihiro Kobayashi
IPC分类号： B32B13/04 , H01L21/324
CPC分类号： H01L21/3225
摘要： There are provided a heat-treating method capable of suppressing generation of slip in a CZ silicon single crystal wafer having a diameter of mainly 300 mm or more even under high temperature heat treatment to annihilate grown-in defects in the vicinity of a surface of the wafer, and an annealed wafer having a DZ layer in a surface layer of the wafer and oxide precipitates in the bulk thereof at a high density which exert a high gettering effect. First heat treatment of a silicon single crystal wafer manufactured from a silicon single crystal ingot pulled by means of a Czochralski method is performed at a temperature in the range of 600 to 1100° C. to form oxide precipitates in the bulk of the wafer, and thereafter, second heat treatment is performed at a temperature in the range of 1150 to 1300° C.
摘要翻译：提供了即使在高温热处理下也能够抑制直径为300mm以上的CZ硅单晶晶片中的滑动产生的热处理方法，以消除在表面附近的生长缺陷晶片，并且在晶片的表面层中具有DZ层的退火晶片，其氧化物以其高密度析出，其发挥高吸杂效应。在由600℃〜1100℃的温度范围内进行利用切克劳斯基法（Czochralski method）拉伸的硅单晶锭制造的硅单晶晶片的第一次热处理，以在晶片本体中形成氧化物析出物，此后，在1150〜1300℃的温度下进行第二次热处理。

90. 发明申请

US20060051596A1 Nickel silicides formed by low-temperature annealing of compositionally modulated multilayers 审中-公开
标题翻译：通过组成调制多层膜的低温退火形成的硅化镍
公开(公告)号：US20060051596A1
公开(公告)日：2006-03-09
申请号：US10529311
申请日：2003-09-26
申请人： Jacob Jensen , David Johnson
发明人： Jacob Jensen , David Johnson
IPC分类号： B32B17/06 , B32B13/04 , B32B15/04 , C03C27/02
CPC分类号： C03C17/36 , C03C17/3607 , C03C17/3636 , C03C17/3649 , C23C14/0682 , C23C14/14 , C23C14/5806 , C23C14/5893 , C23C26/00 , C23C28/021 , C23C28/023 , H01L21/28518 , H01L29/456 , Y10T428/12493 , Y10T428/12535 , Y10T428/12611
摘要： Methods are disclosed for making a compound of nickel and silicon. According to an embodiment, on a surface of a substrate (e.g., silicon), multiple layer pairs are formed in a superposed manner. Each layer pair includes a respective layer of nickel and a respective layer of silicon each being 3 nm or less in thickness. The layers of nickel and silicon in the multiple layer pairs are formed in alternating order, thereby forming a multilayer structure, wherein the layers of nickel and silicon in the multilayer structure are formed at respective thicknesses corresponding to desired mole fractions of nickel and silicon in the multilayer structure. The multilayer structure is annealed at a temperature of 200° C. or less to form an amorphous alloy of nickel and silicon in the multilayer structure, wherein the alloy has the desired mole fractions of nickel and silicon. The amorphous alloy is allowed to nucleate and form a corresponding crystalline alloy having the desired mole fractions of nickel and silicon.
摘要翻译：公开了制造镍和硅化合物的方法。根据一个实施例，在衬底（例如硅）的表面上，以叠加的方式形成多层对。每个层对包括相应的镍层和相应的硅层，其厚度均为3nm或更小。多层对中的镍和硅的层以交替的顺序形成，从而形成多层结构，其中多层结构中的镍和硅层分别以对应于镍和硅的所需摩尔分数的各自的厚度形成多层结构。多层结构在200℃或更低的温度下退火，以在多层结构中形成镍和硅的无定形合金，其中该合金具有所需的镍和硅的摩尔分数。使非晶合金成核并形成具有所需的镍和硅的摩尔分数的相应的结晶合金。

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