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1. 发明授权

US07629589B2 Apparatus and method for controlling ion beam 有权
标题翻译：用于控制离子束的装置和方法
公开(公告)号：US07629589B2
公开(公告)日：2009-12-08
申请号：US11703130
申请日：2007-02-07
申请人： Sung-Wook Hwang , Do-Haing Lee , Chul-Ho Shin , Jong-Woo Sun
发明人： Sung-Wook Hwang , Do-Haing Lee , Chul-Ho Shin , Jong-Woo Sun
IPC分类号： G21K1/08 , H01J1/36 , H01J1/46
CPC分类号： H01J37/08 , H01J27/024 , H01J2237/061 , H01J2237/3151 , H01J2237/31701
摘要： An apparatus and/or method for controlling an ion beam may be provided, and/or a method for preparing an extraction electrode for the same may be provided. In the apparatus, a plurality of extraction electrodes may be disposed in a path of an ion beam. At least one extraction electrode may include a plurality of sub-grids.
摘要翻译：可以提供用于控制离子束的装置和/或方法，和/或可以提供用于制备其的提取电极的方法。在该装置中，多个提取电极可以设置在离子束的路径中。至少一个提取电极可以包括多个子网格。

2. 发明申请

US20080164819A1 Semiconductor apparatus using ion beam 审中-公开
标题翻译：使用离子束的半导体装置
公开(公告)号：US20080164819A1
公开(公告)日：2008-07-10
申请号：US12007187
申请日：2008-01-08
申请人： Sung-Wook Hwang , Yung Hee Yvette Lee , Chul-Ho Shin , Jin-Seok Lee
发明人： Sung-Wook Hwang , Yung Hee Yvette Lee , Chul-Ho Shin , Jin-Seok Lee
IPC分类号： G21K1/00 , H05H1/00 , G21K1/14
CPC分类号： H01J37/305 , H01J27/024 , H01J37/08 , H01J37/3171 , H01J2237/0041 , H01J2237/061
摘要： Provided is a semiconductor apparatus using an ion beam. The semiconductor apparatus may include a first grid to which a voltage applied. The voltage applied to the first grid may have the same potential level as that of a reference voltage applied to a wall portion of a plasma chamber in which plasma may be generated. The first grid may adjoin the plasma. Therefore, a potential level difference between the first grid and the wall portion of the plasma chamber may be zero, and thus the plasma may be stable.
摘要翻译：提供了使用离子束的半导体装置。半导体装置可以包括施加电压的第一栅极。施加到第一栅极的电压可以具有与施加到其中可能产生等离子体的等离子体室的壁部分的参考电压相同的电位电平。第一个栅格可能与等离子体相邻。因此，等离子体室的第一栅极和壁部之间的电位差可以为零，因此等离子体可以是稳定的。

3. 发明授权

US08715472B2 Substrate processing methods for reflectors 有权
标题翻译：反射镜的基板加工方法
公开(公告)号：US08715472B2
公开(公告)日：2014-05-06
申请号：US12659331
申请日：2010-03-04
申请人： Sung-Wook Hwang , Chul-Ho Shin
发明人： Sung-Wook Hwang , Chul-Ho Shin
IPC分类号： C23C14/34
CPC分类号： H01J37/32633 , C23F4/00 , H01J37/32357
摘要： A substrate processing method may include forming a plasma; extracting ions from the plasma and accelerating the ions to have uniform or substantially uniform directivity using a grid system; irradiating the ions at a reflector, wherein the reflector includes a plurality of reflecting plates each having a metal plate and an insulating layer on the metal plate, wherein the reflecting plates are parallel or substantially parallel such that the insulating layers are exposed to the ions; reflecting the ions incident on the reflecting plates away from the insulating layers of the reflecting plates; colliding the ions reflected away from the insulating layers with the metal plates to convert the ions into neutral beams; and irradiating the neutral beams onto a substrate to process the substrate.
摘要翻译：基板处理方法可以包括形成等离子体; 从等离子体中提取离子并使用网格系统加速离子以具有均匀或基本均匀的方向性; 在反射器处照射离子，其中反射器包括多个反射板，每个反射板在金属板上具有金属板和绝缘层，其中反射板平行或基本平行，使得绝缘层暴露于离子; 将入射到反射板上的离子反射离开反射板的绝缘层; 使离开绝缘层的离子与金属板碰撞，将离子转换为中性光束; 并将中性光束照射到衬底上以处理衬底。

4. 发明申请

US20100190356A1 Reflectors, substrate processing apparatuses and methods for the same 有权
标题翻译：反射器，基板处理装置及其方法
公开(公告)号：US20100190356A1
公开(公告)日：2010-07-29
申请号：US12659331
申请日：2010-03-04
申请人： Sung-Wook Hwang , Chul-Ho Shin
发明人： Sung-Wook Hwang , Chul-Ho Shin
IPC分类号： H01L21/26
CPC分类号： H01J37/32633 , C23F4/00 , H01J37/32357
摘要： A substrate processing apparatus may include a processing chamber including a plasma generating unit arranged in an upper region thereof. A grid system, which may extract ions from plasma formed by the plasma generating unit and may accelerate the ions to have substantially uniform directivity. The grid system may be positioned below the plasma generating unit. A reflector may be arranged below the grid system and may include parallel reflecting plates for converting the ions accelerated from the grid system into neutral beams.
摘要翻译：基板处理装置可以包括处理室，其包括布置在其上部区域中的等离子体产生单元。栅格系统，其可以从由等离子体发生单元形成的等离子体提取离子，并且可以加速离子以具有基本均匀的方向性。栅格系统可以位于等离子体生成单元的下方。反射器可以布置在栅格系统下方，并且可以包括用于将从栅格系统加速的离子转换成中性光束的平行反射板。

5. 发明授权

US07564042B2 Ion beam apparatus having plasma sheath controller 失效
标题翻译：具有等离子体鞘控制器的离子束装置
公开(公告)号：US07564042B2
公开(公告)日：2009-07-21
申请号：US11834561
申请日：2007-08-06
申请人： Do-Haing Lee , Sung-Wook Hwang , Chul-Ho Shin
发明人： Do-Haing Lee , Sung-Wook Hwang , Chul-Ho Shin
IPC分类号： H05H1/02 , H01J3/14 , H01J37/08
CPC分类号： H01J37/08 , H01J27/024 , H01J37/3053 , H01J2237/061 , H01J2237/24542
摘要： An ion beam apparatus includes a plasma chamber with a grid assembly installed at one end of the plasma chamber and a plasma sheath controller disposed between the plasma chamber and the grid assembly. The grid assembly includes first ion extraction apertures. The plasma sheath controller includes second ion extraction apertures smaller than the first ion extraction apertures. When the plasma sheath controller is used in this configuration, the surface of the plasma takes on a more planar configuration adjacent the controller so that ions, extracted from the plasma in a perpendicular direction to the plasma surface, pass cleanly through the apertures of the grid assembly rather than collide with the sidewalls of the grid assembly apertures. A semiconductor manufacturing apparatus and method for forming an ion beam are also provided.
摘要翻译：离子束装置包括等离子体室，其中安装在等离子体室的一端的栅格组件和设置在等离子体室和栅格组件之间的等离子体鞘控制器。栅格组件包括第一离子提取孔。等离子体鞘控制器包括比第一离子提取孔小的第二离子提取孔。当在该构造中使用等离子体鞘控制器时，等离子体的表面具有与控制器相邻的更平面的配置，使得从垂直于等离子体表面的方向从等离子体提取的离子通过网格的孔组件而不是与栅格组件孔的侧壁碰撞。还提供了用于形成离子束的半导体制造装置和方法。

6. 发明授权

US07446325B2 Reflector for generating a neutral beam and substrate processing apparatus including the same 有权
标题翻译：用于产生中性束的反射器和包括该反射器的基板处理装置
公开(公告)号：US07446325B2
公开(公告)日：2008-11-04
申请号：US11341558
申请日：2006-01-30
申请人： Sung-Wook Hwang , Chul-Ho Shin
发明人： Sung-Wook Hwang , Chul-Ho Shin
IPC分类号： H01S3/00
CPC分类号： H01J37/32422 , H05H3/02
摘要： Example embodiments of the present invention provide a reflector for generating a neutral beam and a substrate processing apparatus including the same. The reflector may include at least one reflecting plate including a reflecting layer onto which an ion beam collides and a supporting layer. The reflecting layer may reflect and convert the ion beam into a neutral beam, and the supporting layer may reduce thermal deformation of the reflecting layer.
摘要翻译：本发明的示例性实施例提供了一种用于产生中性光束的反射器和包括该反射体的基板处理设备。反射器可以包括至少一个反射板，该反射板包括反射层，离子束在其上碰撞和支撑层。反射层可以将离子束反射并转换成中性光束，并且支撑层可以减小反射层的热变形。

7. 发明申请

US20060219887A1 Reflector for generating a neutral beam and substrate processing apparatus including the same 有权
标题翻译：用于产生中性束的反射器和包括该反射器的基板处理装置
公开(公告)号：US20060219887A1
公开(公告)日：2006-10-05
申请号：US11341558
申请日：2006-01-30
申请人： Sung-Wook Hwang , Chul-Ho Shin
发明人： Sung-Wook Hwang , Chul-Ho Shin
IPC分类号： H05H3/02
CPC分类号： H01J37/32422 , H05H3/02
摘要： Example embodiments of the present invention provide a reflector for generating a neutral beam and a substrate processing apparatus including the same. The reflector may include at least one reflecting plate including a reflecting layer onto which an ion beam collides and a supporting layer. The reflecting layer may reflect and convert the ion beam into a neutral beam, and the supporting layer may reduce thermal deformation of the reflecting layer.
摘要翻译：本发明的示例性实施例提供了一种用于产生中性光束的反射器和包括该反射体的基板处理设备。反射器可以包括至少一个反射板，该反射板包括反射层，离子束在其上碰撞和支撑层。反射层可以将离子束反射并转换成中性光束，并且支撑层可以减小反射层的热变形。

8. 发明申请

US20070181820A1 Apparatus and method for controlling ion beam 有权
标题翻译：用于控制离子束的装置和方法
公开(公告)号：US20070181820A1
公开(公告)日：2007-08-09
申请号：US11703130
申请日：2007-02-07
申请人： Sung-Wook Hwang , Do-Haing Lee , Chul-Ho Shin , Jong-Woo Sun
发明人： Sung-Wook Hwang , Do-Haing Lee , Chul-Ho Shin , Jong-Woo Sun
IPC分类号： H01J3/14
CPC分类号： H01J37/08 , H01J27/024 , H01J2237/061 , H01J2237/3151 , H01J2237/31701
摘要： An apparatus and/or method for controlling an ion beam may be provided, and/or a method for preparing an extraction electrode for the same may be provided. In the apparatus, a plurality of extraction electrodes may be disposed in a path of an ion beam. At least one extraction electrode may include a plurality of sub-grids.
摘要翻译：可以提供用于控制离子束的装置和/或方法，和/或可以提供用于制备其的提取电极的方法。在该装置中，多个提取电极可以设置在离子束的路径中。至少一个提取电极可以包括多个子网格。

9. 发明申请

US20060196425A1 Reflectors, substrate processing apparatuses and methods for the same 审中-公开
标题翻译：反射器，基板处理装置及其方法
公开(公告)号：US20060196425A1
公开(公告)日：2006-09-07
申请号：US11350795
申请日：2006-02-10
申请人： Sung-Wook Hwang , Chul-Ho Shin
发明人： Sung-Wook Hwang , Chul-Ho Shin
IPC分类号： C23C16/00 , B32B13/04 , B32B9/00 , C23F1/00 , H01L21/306 , B32B15/04 , H05H1/24 , B32B19/00
CPC分类号： H01J37/32633 , C23F4/00 , H01J37/32357
摘要： A substrate processing apparatus may include a processing chamber including a plasma generating unit arranged in an upper region thereof. A grid system, which may extract ions from plasma formed by the plasma generating unit and may accelerate the ions to have substantially uniform directivity. The grid system may be positioned below the plasma generating unit. A reflector may be arranged below the grid system and may include parallel reflecting plates for converting the ions accelerated from the grid system into neutral beams.
摘要翻译：基板处理装置可以包括处理室，其包括布置在其上部区域中的等离子体产生单元。栅格系统，其可以从由等离子体发生单元形成的等离子体提取离子，并且可以加速离子以具有基本均匀的方向性。栅格系统可以位于等离子体生成单元的下方。反射器可以布置在栅格系统下方，并且可以包括用于将从栅格系统加速的离子转换成中性光束的平行反射板。

10. 发明授权

US06391714B2 Method for fabricating a capacitor in a semiconductor memory device 失效
标题翻译：在半导体存储器件中制造电容器的方法
公开(公告)号：US06391714B2
公开(公告)日：2002-05-21
申请号：US09738296
申请日：2000-12-18
申请人： Chul-Ho Shin , U In Chung
发明人： Chul-Ho Shin , U In Chung
IPC分类号： H01L218242
CPC分类号： H01L28/84 , H01L21/3143 , H01L27/10814 , H01L27/10855 , Y10T29/41
摘要： A method for making a capacitor of a semiconductor memory device capable of providing increased capacitance without degraded resolution, as well as without the removal of any interlayer insulation layers upon formation of a lower electrode for the capacitor, wherein after formation of an access transistor on a semiconductor substrate, a first interlayer insulation layer for planarization of a surface of the semiconductor substrate and a second interlayer insulation layer for formation of the capacitor lower electrode are formed. After formation of an opening for exposing a part of an impurity diffusion region of the access transistor by etching a part of the first and second interlayer insulating layers, a spacer is formed within the opening. Further, after deposition of a conductive layer for the capacitor lower electrode onto a surface of the substrate, a planarization process is carried out until a part of the upper surface of the spacer is exposed. Finally, after removal of the exposed spacer, the dielectric layer and a conductive layer for the upper electrode of the capacitor are formed in sequence. The method does not require any additional insulation layer evaporation process, since the interlayer insulation layer for formation of the reverse storage electrode could be used for formation of a gate contact of a logic region, without removal. Consequently, simplification of fabrication process for a capacitor is achieved.
摘要翻译：一种用于制造半导体存储器件的电容器的方法，其能够提供增加的电容而不降低分辨率，以及在形成用于电容器的下电极时不去除任何层间绝缘层，其中在形成存取晶体管半导体衬底，用于使半导体衬底的表面平坦化的第一层间绝缘层和用于形成电容器下电极的第二层间绝缘层。在形成用于通过蚀刻第一和第二层间绝缘层的一部分来暴露存取晶体管的一部分杂质扩散区的开口，在开口内形成间隔物。此外，在将电容器下电极的导电层沉积到基板的表面上之后，进行平坦化处理直到间隔件的上表面的一部分露出。最后，在去除暴露的间隔物之后，依次形成电介质层和用于电容器的上电极的导电层。该方法不需要任何额外的绝缘层蒸发工艺，因为用于形成反向存储电极的层间绝缘层可用于形成逻辑区域的栅极接触而不去除。因此，实现了电容器制造工艺的简化。

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