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81. 发明授权

US06586343B1 Method and apparatus for directing constituents through a processing chamber 失效
标题翻译：用于引导成分通过处理室的方法和装置
公开(公告)号：US06586343B1
公开(公告)日：2003-07-01
申请号：US09350817
申请日：1999-07-09
申请人： Henry Ho , Ying Yu , Steven A. Chen
发明人： Henry Ho , Ying Yu , Steven A. Chen
IPC分类号： H01L2131
CPC分类号： H01L21/67017 , Y10S118/90
摘要： A method and apparatus for directing a process gas through a processing apparatus, such as a vapor deposition chamber. The apparatus comprises a pumping plate for a processing chamber having an annular body member wherein said body member has a first portion and a second defining a circumferential edge and a central opening. The first portion comprises a sidewall of the circumferential edge having a plurality of circumferentially spaced through holes and the second portion has comprises a lateral portion that protrudes from the circumferential edge, such that, in a processing chamber, the first portion defines a first gas flow region comprising the central opening and a second gas flow region comprising the lateral portion of the second portion.
摘要翻译：用于引导处理气体通过诸如气相沉积室的处理装置的方法和装置。该装置包括用于处理室的泵板，其具有环形主体构件，其中所述本体构件具有第一部分，第二限定周向边缘和中心开口。第一部分包括圆周边缘的侧壁，其具有多个周向间隔开的通孔，并且第二部分包括从周向边缘突出的侧部，使得在处理室中，第一部分限定第一气流区域包括中央开口和包括第二部分的侧部的第二气流区域。

82. 发明申请

US20020020344A1 Semiconductor manufacturing method, substrate processing method, and semiconductor manufacturing apparatus 有权
标题翻译：半导体制造方法，基板处理方法和半导体制造装置
公开(公告)号：US20020020344A1
公开(公告)日：2002-02-21
申请号：US09819690
申请日：2001-03-29
发明人： Satoshi Takano
IPC分类号： B05C011/02
CPC分类号： H01L21/67778 , H01L21/67017 , H01L21/67167 , H01L21/67745 , Y10S118/90 , Y10S414/135 , Y10S414/136 , Y10S414/137 , Y10S414/138 , Y10S414/139 , Y10S438/913
摘要： It is an object of the present invention to adjust the transfer environment of a substrate in order to prevent contamination of the substrate surface by impurities. A semiconductor manufacturing apparatus comprises a load-lock chamber 1 in which substrate exchange with the outside is performed, a wafer process chamber 2 in which the wafer is subjected to a predetermined processing, and a transfer chamber 3 in which the wafer is transferred between the load-lock chamber 1 and the wafer process chamber 2. In a semiconductor manufacturing method in which this semiconductor manufacturing apparatus is used to treat a substrate, an inert gas (N2) is supplied to and exhausted from the load-lock chamber 1, the transfer chamber 3, and the wafer process chamber 2 while the substrate is being transferred from the load-lock chamber 1 to the wafer process chamber 2 through the transfer chamber 3, and the substrate transfer is carried out with a predetermined pressure maintained.
摘要翻译：本发明的目的是调整基片的转印环境，以防止杂质污染基片表面。半导体制造装置包括：与外部进行基板交换的负载锁定室1，经受了规定处理的晶片处理室2;以及转印室3，负载锁定室1和晶片处理室2.在将半导体制造装置用于处理基板的半导体制造方法中，向负载锁定室1供给惰性气体（N 2）并从负载锁定室1排出，传输室3和晶片处理室2，同时基板通过传送室3从加载锁定室1传送到晶片处理室2，并且以保持预定压力的方式进行基板传送。

83. 发明授权

US06328801B1 Method and system for recovering and recirculating a deuterium-containing gas 失效
标题翻译：用于回收和再循环含氘气体的方法和系统
公开(公告)号：US06328801B1
公开(公告)日：2001-12-11
申请号：US09019781
申请日：1998-02-06
申请人： Daniel Gary , Jean-Marc Girard , Jean-Christophe Rostaing , Jean-Marie Friedt
发明人： Daniel Gary , Jean-Marc Girard , Jean-Christophe Rostaing , Jean-Marie Friedt
IPC分类号： B05C1100
CPC分类号： B01D53/04 , B01D2253/108 , B01D2253/112 , B01D2258/0216 , Y02C20/10 , Y10S55/30 , Y10S118/90 , Y10S261/27
摘要： Provided is a novel method of and system for recovering and recirculating a deuterium-containing gas. According to the inventive method, a deuterium-containing feed gas is introduced into a chamber. An exhaust gas containing deuterium is removed from the chamber. The deuterium concentration of the exhaust gas is adjusted to a predetermined value, thereby producing a concentration-adjusted gas stream. Finally, the concentration-adjusted gas stream is introduced into the chamber as the deuterium-containing feed gas. The invention makes the use of deuterium, for example, in the mass production of semiconductor devices, commercially feasible.
摘要翻译：提供了用于回收和再循环含氘气体的新方法和系统。根据本发明的方法，将含氘原料气体引入室中。从室中除去含有氘的废气。将废气的氘浓度调整为规定值，由此生成浓度调节气体流。最后，将浓度调节的气流作为含氘原料气体引入该室。本发明例如在半导体器件的批量生产中可以使用氘，这在商业上是可行的。

84. 发明授权

US06287889B1 Diamond thin film or the like, method for forming and modifying the thin film, and method for processing the thin film 失效
标题翻译：金刚石薄膜等，薄膜的形成和修饰方法，以及薄膜的加工方法
公开(公告)号：US06287889B1
公开(公告)日：2001-09-11
申请号：US09490991
申请日：2000-01-26
申请人： Shoji Miyake , Shu-Ichi Takeda
发明人： Shoji Miyake , Shu-Ichi Takeda
IPC分类号： H01L2100
CPC分类号： C23C14/0611 , C23C14/0641 , C23C14/0647 , C23C14/5826 , C23C16/27 , C23C16/34 , C23C16/342 , C23C16/56 , C30B29/04 , C30B33/00 , H01L21/0237 , H01L21/02527 , H01L21/0262 , Y10S118/90 , Y10S438/931 , Y10T428/12528 , Y10T428/12535 , Y10T428/12542 , Y10T428/12576
摘要： An improved gas phase synthesized diamond, CBN, BCN, or CN thin film having a modified region in which strain, defects, color and the like are reduced and/or eliminated. The thin film can be formed on a substrate or be a free-standing thin film from which the substrate has been removed. The thin film can be stably and reproducibly modified to have an oriented polycrystal structure or a single crystal structure. The thin film is modified by being subjected to and heated by microwave irradiation in a controlled atmosphere. The thin film has a modified region in which a line width of the diamond spectrum evaluated by Raman spectroscopy of 0.1 microns or greater is substantially constant along a film thickness direction of the thin film, and the line width of the modified region is 85% or less of a maximum line width of the residual portion of the film thickness.
摘要翻译：具有减少和/或消除应变，缺陷，颜色等的改性区域的改进的气相合成金刚石，CBN，BCN或CN薄膜。薄膜可以形成在基板上，或者是已经从基板去除的自立薄膜。可以将薄膜稳定且可重复地修饰为具有定向多晶体结构或单晶结构。通过在受控气氛中通过微波照射进行加热而对薄膜进行改性。薄膜具有改性区域，其中通过拉曼光谱法评估的金刚石光谱的线宽度为0.1微米或更大，沿着薄膜的膜厚度方向基本上是恒定的，并且改性区域的线宽度为85％或较小的膜厚残余部分的最大线宽。

85. 发明授权

US5310711A Method of forming doped shallow electrical junctions 失效
标题翻译：形成掺杂浅电结的方法
公开(公告)号：US5310711A
公开(公告)日：1994-05-10
申请号：US101145
申请日：1993-08-02
申请人： Clifford I. Drowley , John E. Turner
发明人： Clifford I. Drowley , John E. Turner
IPC分类号： H01L21/00 , H01L21/223 , H01L21/22
CPC分类号： H01L21/67103 , H01L21/223 , Y10S118/90 , Y10S148/017 , Y10S148/03 , Y10S148/144 , Y10T29/41
摘要： Very shallow electrical junctions may be formed in an oxide free surface of a semiconductor by introducing an inert or reducing gas into a vacuum processing chamber, heating the semiconductor to between 750.degree. C. and 1100.degree. C., introducing a dilute solution of a dopant gas into the chamber, and exposing the semiconductor to the gases for about 0.5 to about 100 minutes, preferably between 10 and 30 minutes. A relatively wide range of surface dopant concentrations may be achieved thereby with dopant concentration controlled independent of junction depth. Non-oxide free semiconductor surfaces may be made oxide free by first heating the semiconductor surface in the presence of the reducing gas. This technique provides uniform surface dopant concentrations and is suitable for the formation of junctions in deep trenches and other features having high aspect ratios.
摘要翻译：可以通过将惰性或还原气体引入真空处理室中将半导体加热到750℃至1100℃之间，在半导体的无氧化物表面形成非常浅的电连接点，引入稀释剂气体进入室，并将半导体暴露于气体约0.5至约100分钟，优选10至30分钟。可以实现相对宽范围的表面掺杂剂浓度，从而独立于结深度控制掺杂剂浓度。通过在还原气体的存在下首先加热半导体表面，可以使非氧化物半导体表面无氧化。该技术提供均匀的表面掺杂剂浓度，并且适用于在深沟槽中形成结以及具有高纵横比的其它特征。

86. 发明授权

US4696716A Apparatus for doping semiconductor rods with solid dopants 失效
标题翻译：用固体掺杂剂掺杂半导体棒的装置
公开(公告)号：US4696716A
公开(公告)日：1987-09-29
申请号：US865218
申请日：1986-05-20
申请人： Wolfgang Keller
发明人： Wolfgang Keller
IPC分类号： C30B13/10 , H01L21/18 , H01L21/208 , C30B13/12
CPC分类号： C30B13/10 , Y10S118/90 , Y10T117/1076
摘要： Semiconductor rods are doped in a crucible-free, float-zone enclosure, by the introduction of dopant pellets into the float-zone. The dopant pellets are located in a hopper (7), mounted on the inside of the float-zone enclosure. The introduction of individual dopant pellets is controlled, through an actuating device (12), from the outside of the enclosure.
摘要翻译：半导体棒通过将掺杂剂颗粒引入浮区而掺入无坩埚的浮区外壳中。掺杂剂颗粒位于安装在浮区外壳内侧的料斗（7）中。通过致动装置（12）从外壳的外部控制单个掺杂剂颗粒的引入。

87. 发明授权

US4492716A Method of making non-crystalline semiconductor layer 失效
公开(公告)号：US4492716A
公开(公告)日：1985-01-08
申请号：US377314
申请日：1982-05-12
申请人： Shunpei Yamazaki
发明人： Shunpei Yamazaki
IPC分类号： H01J37/32 , B01J19/08 , C23C16/50 , C30B25/02 , H01L21/205 , H01L21/22 , H01L29/161 , H01L31/20 , B05D5/12
CPC分类号： H01L21/02422 , H01L21/02425 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L29/161 , H01L31/204 , H01L31/206 , Y02E10/50 , Y02P70/521 , Y10S118/90 , Y10S438/907 , Y10S438/908
摘要： Substrates are disposed in a reaction chamber having a gas inlet and a gas outlet and a mixture gas containing at least a semiconductor material gas and a carrier gas is introduced into the reaction chamber in such a state in which a gas in the reaction chamber is exhausted therefrom. An electromagnetic field is applied to the mixture gas to ionize it into a mixture gas plasma in the reaction chamber, by which a semiconductor material is deposited on each substrate. In this case, the semiconductor material thus deposited on each substrate becomes a non-crystalline semiconductor by holding the atmospheric pressure in the reaction chamber below 1 atm and maintaining the substrate at a temperature lower than a temperature at which the semiconductor material on the substrate becomes crystallized.The reaction chamber is provided with a gas ionizing region on the side of the gas inlet and a semiconductor depositing region on the side of the gas outlet. In the gas ionizing region, the mixture gas is ionized by a high-frequency electromagnetic field having a high alternating frequency. The mixture gas plasma thus formed in the gas ionizing region is passed into the semiconductor depositing region, in which the substrates are each placed and deposited with the non-crystalline semiconductor layer.

88. 发明授权

US4438723A Multiple chamber deposition and isolation system and method 失效
标题翻译：多室沉积和隔离系统及方法
公开(公告)号：US4438723A
公开(公告)日：1984-03-27
申请号：US306146
申请日：1981-09-28
申请人： Vincent D. Cannella , Masatsugu Izu , Stephen J. Hudgens
发明人： Vincent D. Cannella , Masatsugu Izu , Stephen J. Hudgens
IPC分类号： H01L31/04 , C23C16/54 , H01L21/00 , H01L21/205 , C23C13/10 , C23C13/12
CPC分类号： C23C16/54 , C23C16/545 , Y10S118/90
摘要： The formation of a body of material on a substrate having at least two layers of different composition is made possible by the improved system and method of the present invention with minimized cross contamination between the respective deposition environments in which the layers are deposited. The disclosure relates more specifically to the use of the system and method for the deposition of multi-layered amorphous silicon alloys to form photovoltaic devices. As a preferred embodiment of the invention, first, second, and third glow discharge deposition chambers are provided for depositing respective first, second, and third amorphous silicon alloy layers on a substrate. The second layer is substantially intrinsic in conductivity and differs in composition from the first and third layers which are of opposite conductivity type by the absence of at least one element. The second chamber is provided with starting materials including at least one gas from which the deposited layers are derived and the first and third chambers are provided with respective dopants to render the first and third layers opposite in conductivity. Contamination of the second chamber by the dopants in the first and third chambers is prevented by the establishment of unidirectional flow of the at least one gas from the second chamber to the first and third chambers.
摘要翻译：通过本发明的改进的系统和方法，在具有至少两层不同组成的基底上形成材料体是通过在各层沉积环境之间的交叉污染最小化而实现的。本公开更具体地涉及用于沉积多层非晶硅合金以形成光伏器件的系统和方法的使用。作为本发明的优选实施例，提供了第一，第二和第三辉光放电沉积室，用于在衬底上沉积相应的第一，第二和第三非晶硅合金层。第二层在电导率上基本上是固有的，并且组成与第一和第三层不同，第一和第三层是由不存在至少一种元素而具有相反导电类型的。第二腔室设置有起始材料，其包括至少一种气体，从其中导出沉积层，并且第一和第三腔室设置有各自的掺杂剂，以使第一和第三层导电性相反。通过建立从第二室到第一和第三室的至少一种气体的单向流动来防止第一室和第三室中的掺杂剂对第二室的污染。

89. 发明授权

US4407694A Multi-range doping of epitaxial III-V layers from a single source 失效
标题翻译：从单个源的多范围掺杂外延III-V层
公开(公告)号：US4407694A
公开(公告)日：1983-10-04
申请号：US276104
申请日：1981-06-22
申请人： Victor K. Eu , Milton Feng , Timothy T. Zielinski , James M. Whelan
发明人： Victor K. Eu , Milton Feng , Timothy T. Zielinski , James M. Whelan
IPC分类号： H01L21/205 , H01L21/223
CPC分类号： H01L21/02576 , H01L21/02395 , H01L21/02543 , H01L21/02546 , H01L21/0262 , Y10S118/90 , Y10S252/951 , Y10S438/925
摘要： Silicon doping of GaAs epitaxial layers grown using the AsCl.sub.3 /H.sub.2 /GaAs:Ga CVD system is accomplished using AsCl.sub.3 :SiCl.sub.4 liquid doping solutions. These solutions can be readily prepared with reproducible compositions and provide excellent doping control. Fine adjustments in the doping level can be achieved by adjusting the H.sub.2 flow rate and by varying the temperature of the doping solution. Doping levels may range from about 5.times.10.sup.15 to 5.times.10.sup.19 cm.sup.-3 by adjusting the mole fraction of SiCl.sub.4 in the doping solution and the H.sub.2 flow rate to change the mole fraction of P.sub.HCl. The epitaxial layers doped using this technique have excellent room temperature and liquid nitrogen mobilities for electron concentrations between 1.times.10.sup.16 cm.sup.-3 and 8.times.10.sup.18 cm.sup.-3. This doping method is particularly useful for the growth of GaAs epitaxial layers for FET devices.
摘要翻译：使用AsCl3 / H2 / GaAs：Ga CVD系统生长的GaAs外延层的硅掺杂使用AsCl 3：SiCl 4液体掺杂溶液来实现。这些溶液可以容易地用可重复组合物制备并提供优异的掺杂控制。可以通过调节H2流速和改变掺杂溶液的温度来实现掺杂水平的微调。通过调节掺杂溶液中SiCl 4的摩尔分数和H 2流速来改变PHCl的摩尔分数，掺杂量可以在约5×10 15至5×10 19 cm -3的范围内。使用该技术掺杂的外延层对于1×10 16 cm -3和8×10 18 cm -3之间的电子浓度具有优异的室温和液氮迁移率。该掺杂方法对于用于FET器件的GaAs外延层的生长特别有用。

90. 发明授权

US4144116A Vapor deposition of single crystal gallium nitride 失效
标题翻译：单晶氮化镓的气相沉积
公开(公告)号：US4144116A
公开(公告)日：1979-03-13
申请号：US667690
申请日：1976-03-17
申请人： Guy M. Jacob , Jean P. Hallais
发明人： Guy M. Jacob , Jean P. Hallais
IPC分类号： C01G15/00 , C30B25/02 , C30B29/38 , C30B29/40 , H01L21/205 , B01J17/32 , C01B21/06
CPC分类号： C01G15/00 , C30B25/02 , Y10S118/90 , Y10S148/003 , Y10S148/006 , Y10S148/025 , Y10S148/057 , Y10S148/065 , Y10S148/113 , Y10S148/15
摘要： Method of manufacturing gallium nitride crystals by reaction of galium halide and ammonia in which free hydrogen chloride is introduced into the reaction and deposition zones.
摘要翻译：通过卤化镓和氨的反应制备氮化镓晶体的方法，其中游离氯化氢被引入反应和沉积区。

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