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81. 发明申请

US20100295054A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20100295054A1
公开(公告)日：2010-11-25
申请号：US12451920
申请日：2008-06-05
申请人： Kuniyoshi Okamoto , Hiroaki Ohta
发明人： Kuniyoshi Okamoto , Hiroaki Ohta
IPC分类号： H01L33/02 , H01L33/16 , H01L33/30
CPC分类号： H01S5/32341 , H01S5/028 , H01S5/0283 , H01S5/2201 , H01S5/3202 , H01S2302/00
摘要： The semiconductor light-emitting element includes a group III nitride semiconductor multilayer structure having an active layer containing In as well as a p-type layer and an n-type layer stacked to hold the active layer therebetween. The group III nitride semiconductor multilayer structure is made of a group III nitride semiconductor having a major surface defined by a nonpolar plane whose offset angle in a c-axis direction is negative. A remarkable effect is attained when the emission wavelength of the active layer is not less than 450 nm. In the group III nitride semiconductor constituting the group III nitride semiconductor multilayer structure, the offset angle θ in the c-axis direction preferably satisfies −1°
摘要翻译：半导体发光元件包括具有包含In的有源层以及层叠以将活性层保持在其间的p型层和n型层的III族氮化物半导体多层结构。 III族氮化物半导体多层结构由具有由c轴方向的偏移角为负的非极性平面限定的主面的III族氮化物半导体构成。当有源层的发射波长不小于450nm时，可获得显着的效果。在构成III族氮化物半导体多层结构的III族氮化物半导体中，偏移角＆在c轴方向上优选满足-1°<θ; <0°。

82. 发明授权

US07816702B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07816702B2
公开(公告)日：2010-10-19
申请号：US12245077
申请日：2008-10-03
申请人： Shinichi Saito , Masahiro Aoki , Hiroyuki Uchiyama , Hideo Arimoto , Noriyuki Sakuma , Jiro Yamamoto
发明人： Shinichi Saito , Masahiro Aoki , Hiroyuki Uchiyama , Hideo Arimoto , Noriyuki Sakuma , Jiro Yamamoto
IPC分类号： H01L33/00
CPC分类号： H01S5/12 , B82Y20/00 , H01S5/0424 , H01S5/0425 , H01S5/1237 , H01S5/125 , H01S5/18341 , H01S5/3004 , H01S5/3427 , H01S2301/176 , H01S2302/00
摘要： There are a silicon laser device having a IV-group semiconductor such as silicon or germanium equivalent to the silicon as a basic constituent element on a substrate made of the silicon, and the like by a method capable of easily forming the silicon laser device by using a general silicon process, and a manufacturing method thereof. The silicon laser device is an ultrathin silicon laser that includes a first electrode unit injecting electrons, a second electrode unit injecting holes, a light emitting unit electrically connected to the first electrode unit and the second electrode unit, wherein the light emitting unit is made of single-crystal silicon and has a first surface (top surface) and a second surface (bottom surface) opposed to the first surface, a waveguide made of a first dielectric, which is disposed in the vicinity of the light emitting unit, by setting surface directions of the first and second surfaces as a surface (100) and thinning a thickness of the light emitting unit in a direction perpendicular to the first and second surfaces, and a mirror formed by alternately adjoining the first dielectric and a second dielectric.
摘要翻译：存在具有诸如硅等离子体的硅组合半导体的硅激光器装置，其等同于由硅制成的衬底上作为基本构成元件的硅等，通过使用能够容易地形成硅激光器件的方法，通用硅工艺及其制造方法。硅激光器件是一种超薄硅激光器，其包括注入电子的第一电极单元，注入空穴的第二电极单元，与第一电极单元和第二电极单元电连接的发光单元，其中发光单元由单晶硅，并且具有与第一表面相对的第一表面（顶表面）和第二表面（底表面），通过设置在发光单元附近的由第一电介质制成的波导第一表面和第二表面的方向作为表面（100），并且在垂直于第一和第二表面的方向上减薄发光单元的厚度，以及通过交替地邻接第一电介质和第二电介质而形成的反射镜。

83. 发明申请

US20100220752A1 810 nm Ultra-Short Pulsed Fiber Laser 有权
标题翻译： 810 nm超短脉冲光纤激光器
公开(公告)号：US20100220752A1
公开(公告)日：2010-09-02
申请号：US12715596
申请日：2010-03-02
申请人： Jian Liu , Lihmei Yang
发明人： Jian Liu , Lihmei Yang
IPC分类号： H01S3/30 , H01S3/10
CPC分类号： H01S3/2308 , H01S3/0057 , H01S3/0092 , H01S3/06754 , H01S3/094092 , H01S3/1616 , H01S2302/00
摘要： Methods and systems for generating ultra-short fiber laser pulses are disclosed, including generating a signal laser pulse from a seed fiber laser; using a pulse stretcher comprising an input and an output, wherein the signal laser pulse is coupled into the input of the pulse stretcher; using a Tm:ZBLAN fiber comprising an input and an output, wherein the stretched signal laser pulse from the output of the pulse stretcher is coupled into the input of the Tm:ZBLAN fiber; using a pump laser coupled to either the output or the input of the Tm:ZBLAN fiber to amplify the stretched signal laser pulse; and using a compressor comprising an input and an output, wherein the output of the Tm:ZBLAN fiber is coupled to the input of the compressor and the output of the compressor emits the amplified signal laser pulse. Other embodiments are described and claimed.
摘要翻译：公开了用于产生超短纤维激光脉冲的方法和系统，包括从种子光纤激光器产生信号激光脉冲; 使用包括输入和输出的脉冲展开器，其中所述信号激光脉冲被耦合到所述脉冲展开器的输入中; 使用包括输入和输出的Tm：ZBLAN纤维，其中来自所述脉冲展开器的输出的拉伸信号激光脉冲耦合到所述Tm：ZBLAN纤维的输入中; 使用耦合到Tm：ZBLAN光纤的输出或输入的泵浦激光器来放大拉伸的信号激光脉冲; 以及使用包括输入和输出的压缩器，其中所述Tm：ZBLAN纤维的输出耦合到所述压缩机的输入端，并且所述压缩器的输出发射所述放大的信号激光脉冲。描述和要求保护其他实施例。

84. 发明授权

US07787729B2 Single mode propagation in fibers and rods with large leakage channels 有权
标题翻译：具有大泄漏通道的纤维和棒中的单模传播
公开(公告)号：US07787729B2
公开(公告)日：2010-08-31
申请号：US11134856
申请日：2005-05-20
申请人： Liang Dong , William Wong , Martin E. Fermann
发明人： Liang Dong , William Wong , Martin E. Fermann
IPC分类号： G02B6/02
CPC分类号： G02B6/02357 , G02B6/00 , G02B6/02 , G02B6/02009 , G02B6/02033 , G02B6/02361 , G02B6/02366 , G02B6/02371 , G02B6/024 , G02B6/036 , G02B6/03633 , G02B6/03694 , G02B6/24 , G02B6/26 , G02B6/262 , G02B6/32 , G02F1/0134 , H01S3/0057 , H01S3/02 , H01S3/06708 , H01S3/06729 , H01S3/06745 , H01S3/06754 , H01S3/094007 , H01S3/1618 , H01S3/2308 , H01S3/302 , H01S2302/00
摘要： Various embodiments include large cores fibers that can propagate few modes or a single mode while introducing loss to higher order modes. Some of these fibers are holey fibers that comprising cladding features such as air-holes. Additional embodiments described herein include holey rods. The rods and fibers may be used in many optical systems including optical amplification systems, lasers, short pulse generators, Q-switched lasers, etc. and may be used for example for micromachining.
摘要翻译：各种实施例包括可以传播少数模式或单模的大芯纤维，同时将损耗引入高阶模式。这些纤维中的一些是包含诸如气孔的包层特征的多孔纤维。本文所述的另外的实施例包括多孔棒。棒和纤维可以用于包括光学放大系统，激光器，短脉冲发生器，Q开关激光器等的许多光学系统中，并且可以用于例如微加工。

85. 发明申请

US20090295902A1 SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, AND IMAGE FORMING DEVICE 审中-公开
标题翻译：表面发射激光阵列，光学扫描装置和图像形成装置
公开(公告)号：US20090295902A1
公开(公告)日：2009-12-03
申请号：US12090467
申请日：2007-08-20
申请人： Shunichi Sato , Akihiro Itoh , Satoru Sugawara , Hiroyoshi Shouji
发明人： Shunichi Sato , Akihiro Itoh , Satoru Sugawara , Hiroyoshi Shouji
IPC分类号： B41J2/435 , H01S5/183 , H01S3/10 , H01S5/187 , H01L21/00
CPC分类号： H01S5/18 , B82Y20/00 , H01S5/0203 , H01S5/18313 , H01S5/18358 , H01S5/2213 , H01S5/3434 , H01S5/423 , H01S2302/00
摘要： A surface-emitting laser array includes a plurality of surface-emitting laser elements. Each surface-emitting laser element includes a first reflection layer formed on a substrate, a resonator formed in contact with the first reflection layer and containing an active layer, and a second reflection layer formed over the first reflection layer and in contact with the resonator. The second reflection layer contains a selective oxidation layer. The first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer. The resonator is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located under the selective oxidation layer and over the first reflection layer.
摘要翻译：表面发射激光器阵列包括多个表面发射激光器元件。每个表面发射激光器元件包括形成在基板上的第一反射层，与第一反射层接触并且包含有源层的谐振器，以及形成在第一反射层上并与谐振器接触的第二反射层。第二反射层包含选择氧化层。第一反射层在活性层侧至少包含具有等于或大于包含在第二反射层中的选择性氧化层的氧化速率的氧化速率的低折射率层。谐振器由至少含有In的AlGaInPAs基材制成。台面结构的底部位于选择性氧化层的下方并位于第一反射层之上。

86. 发明申请

US20090268768A1 METHOD OF MAKING NITRIDE SEMICONDUCTOR LASER, METHOD OF MAKING EPITAXIAL WAFER, AND NITRIDE SEMICONDUCTOR LASER 有权
标题翻译：制备氮化物半导体激光的方法，制备外延晶体的方法和氮化物半导体激光
公开(公告)号：US20090268768A1
公开(公告)日：2009-10-29
申请号：US12429322
申请日：2009-04-24
申请人： Masaki UENO , Takashi KYONO
发明人： Masaki UENO , Takashi KYONO
IPC分类号： H01S5/323 , H01L21/20
CPC分类号： H01S5/34333 , B82Y20/00 , H01L21/02389 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01S2302/00 , H01S2304/04
摘要： A method of making a nitride semiconductor laser comprises forming a first InGaN film for an active layer on a gallium nitride based semiconductor region, and the first InGaN film has a first thickness. In the formation of the first InGaN film, a first gallium raw material, a first indium raw material, and a first nitrogen raw material are supplied to a reactor to deposit a first InGaN for forming the first InGaN film at a first temperature, and the first InGaN has a thickness thinner than the first thickness. Next, the first InGaN is heat-treated at a second temperature lower than the first temperature in the reactor, while supplying a second indium raw material and a second nitrogen raw material to the reactor. Then, after the heat treatment, a second InGaN is deposited at least once to form the first InGaN film.
摘要翻译：制造氮化物半导体激光器的方法包括在氮化镓基半导体区域上形成用于有源层的第一InGaN膜，并且第一InGaN膜具有第一厚度。在第一InGaN膜的形成中，将第一镓原料，第一铟原料和第一氮原料供给到反应器，以在第一温度下沉积用于形成第一InGaN膜的第一InGaN，第一InGaN具有比第一厚度更薄的厚度。接着，将第一InGaN在比反应器中的第一温度低的第二温度下进行热处理，同时向反应器供给第二铟原料和第二氮原料。然后，在热处理之后，将至少一次沉积第二InGaN以形成第一InGaN膜。

87. 发明申请

US20090262416A1 CASCADE LASER 审中-公开
标题翻译： CASCADE激光
公开(公告)号：US20090262416A1
公开(公告)日：2009-10-22
申请号：US12426128
申请日：2009-04-17
申请人： David George Lancaster , Shayne Peter Bennetts
发明人： David George Lancaster , Shayne Peter Bennetts
IPC分类号： H01S3/30 , H01S3/00 , G02B6/036
CPC分类号： H01S3/094003 , G02B6/02366 , G02B6/03633 , G02B6/03638 , G02B6/03661 , H01S3/06716 , H01S3/0672 , H01S3/06737 , H01S3/06741 , H01S3/094007 , H01S3/09403 , H01S3/0941 , H01S3/161 , H01S3/1611 , H01S3/1616 , H01S2302/00
摘要： Disclosed is an optical fiber that includes an inner core having a concentration of at least one laser active material, the inner core being adapted to operate in a single mode manner; and an outer core disposed about the inner core having a concentration of at least one laser active material. The outer core being adapted to operate in a multimode manner, a cladding disposed about the outer core; and an outer cladding is disposed about the cladding adapted to substantially confine pump light within the cladding.
摘要翻译：公开了一种光纤，其包括具有至少一种激光活性材料的浓度的内芯，内芯适于以单模式操作; 以及设置在所述内芯周围的具有至少一种激光活性材料的浓度的外芯。外芯适于以多模式方式操作，围绕外芯设置的包层; 并且外包层围绕包层设置，适于基本上将泵浦光限制在包层内。

88. 发明授权

US07535937B2 Monolithic microchip laser with intracavity beam combining and sum frequency or difference frequency mixing 失效
标题翻译：单片微芯片激光器具有腔内光束组合和和频率或差频混频
公开(公告)号：US07535937B2
公开(公告)日：2009-05-19
申请号：US11378552
申请日：2006-03-18
申请人： Ningyi Luo , Sheng-Bai Zhu , Shaoping Lu
发明人： Ningyi Luo , Sheng-Bai Zhu , Shaoping Lu
IPC分类号： H01S3/10 , H01S3/08
CPC分类号： G02F1/3534 , G02F1/3544 , H01S3/005 , H01S3/0405 , H01S3/0602 , H01S3/0604 , H01S3/0612 , H01S3/0627 , H01S3/07 , H01S3/08 , H01S3/08054 , H01S3/08086 , H01S3/0809 , H01S3/0811 , H01S3/082 , H01S3/09415 , H01S3/108 , H01S3/1083 , H01S3/109 , H01S3/1611 , H01S3/1643 , H01S3/1673 , H01S3/2383 , H01S2302/00
摘要： A method for producing low-noise laser output at various wavelengths and/or in various operation modes in a monolithic microchip laser comprises schemes of generating two fundamental beams in separate cavities, precise intracavity beam combination based on the walk-off effect in birefringent crystal, and wavelength conversion in nonlinear optical crystals. The fundamental beams are produced from light sources selected upon the desired wavelengths, polarizations, and other features related to the laser output. Low-noise laser devices operated in SLM or with spectra of flat-top or desired bandwidths are constructed according to the method. High-volume fabrication is feasible. Apparatus of compact size and efficient frequency conversion is demonstrated with various configurations including those for generating low-noise 491 nm laser, as a replacement of Argon ion laser.
摘要翻译：一种用于在单片微芯片激光器中以各种波长和/或各种操作模式生产低噪声激光输出的方法包括在单独的腔中产生两个基本光束的方案，基于双折射晶体的离散效应的精确的腔内光束组合，和非线性光学晶体的波长转换。光束根据所需的波长，极化以及与激光输出相关的其他特征选择的光源产生。根据该方法构建以SLM运行的低噪声激光装置或平顶或期望带宽的光谱。大容量制造是可行的。用于产生低噪声491nm激光器的各种配置，作为氩离子激光器的替代，证明了紧凑尺寸和高效率变频的装置。

89. 发明申请

US20090034571A1 MIGRATION ENHANCED EPITAXY FABRICATION OF ACTIVE REGIONS HAVING QUANTUM WELLS 有权
标题翻译：具有量子阱的活跃区域的迁移增强外延制造
公开(公告)号：US20090034571A1
公开(公告)日：2009-02-05
申请号：US12250405
申请日：2008-10-13
申请人： Ralph H. Johnson
发明人： Ralph H. Johnson
IPC分类号： H01S5/183 , H01S5/026
CPC分类号： H01L21/02395 , B82Y20/00 , H01L21/02387 , H01L21/02458 , H01L21/02463 , H01L21/02466 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/02549 , H01L21/02631 , H01L33/007 , H01S5/18308 , H01S5/18311 , H01S5/2063 , H01S5/3201 , H01S5/32358 , H01S5/32366 , H01S5/34 , H01S5/3403 , H01S5/3406 , H01S5/34306 , H01S5/34313 , H01S5/34346 , H01S5/34353 , H01S2302/00 , H01S2304/02
摘要： Semiconductor lasers, such as VCSELs having active regions with flattening layers associated with nitrogen-containing quantum wells are disclosed. MEE (Migration Enhanced Epitaxy) is used to form a flattening layer upon which a quantum well is formed and thereby enhance smoothness of quantum well interfaces and to achieve narrowing of the spectrum of light emitted from nitrogen containing quantum wells. A cap layer is also formed over the quantum well.
摘要翻译：公开了半导体激光器，例如具有与含氮量子阱相关的扁平层的活性区域的VCSEL。 MEE（迁移增强外延）用于形成平坦化层，在其上形成量子阱，从而增强量子阱界面的平滑度，并实现从含氮量子阱发射的光的光谱变窄。覆盖层也形成在量子阱上。

90. 发明授权

US07356065B2 Laser-diode-excited laser apparatus, fiber laser apparatus, and fiber laser amplifier in which laser medium doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ is excited with GaN-based compound laser diode 失效
公开(公告)号：US07356065B2
公开(公告)日：2008-04-08
申请号：US10952733
申请日：2004-09-30
申请人： Hisashi Ohtsuka , Yoji Okazaki , Takayuki Katoh
发明人： Hisashi Ohtsuka , Yoji Okazaki , Takayuki Katoh
IPC分类号： H01S3/091
CPC分类号： H01S3/067 , H01S3/025 , H01S3/0405 , H01S3/042 , H01S3/0602 , H01S3/09415 , H01S3/109 , H01S3/1603 , H01S3/161 , H01S3/1615 , H01S5/32341 , H01S2302/00
摘要： A solid-state laser crystal constituting a laser-diode-excited solid-state laser apparatus or an optical fiber constituting a fiber laser apparatus or fiber laser amplifier is doped with one of Ho3+, Sm3+, Eu3+, Dy3+, Er3+, and Tb3+ so that a laser beam is emitted from the solid-state laser crystal or the optical fiber, or incident light of the fiber laser amplifier is amplified, by one of the transitions from 5S2 to 5I7, from 5S2 to 5I8, from 4G5/2 to 6H5/2, from 4G5/2 to 6H7/2, from 4F3/2 to 6H11/2, from 5D0 to 7F2, from 4F9/2 to 6H13/2, from 4F9/2 to 6H11/2, from 4S3/2 to 4I15/2, from 2H9/2 to 4I13/2, and from 5D4 to 7F5. The above solid-state laser crystal or optical fiber is excited with a GaN-based compound laser diode.

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