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81. 发明授权

US4908329A Process for the formation of a functional deposited film containing groups II and VI atoms by microwave plasma chemical vapor deposition process 失效
标题翻译：通过微波等离子体化学气相沉积工艺形成含有II和VI族原子的功能沉积膜的方法
公开(公告)号：US4908329A
公开(公告)日：1990-03-13
申请号：US302243
申请日：1989-01-27
申请人： Masahiro Kanai , Tsutomu Murakami , Takayoshi Arai , Soichiro Kawakami
发明人： Masahiro Kanai , Tsutomu Murakami , Takayoshi Arai , Soichiro Kawakami
IPC分类号： C23C16/50 , C23C16/30 , C23C16/452 , C23C16/511 , C30B25/10 , H01L21/365
CPC分类号： C30B25/105 , C23C16/306 , C23C16/452 , C30B29/48 , H01L21/02422 , H01L21/02551 , H01L21/0256 , H01L21/02573 , H01L21/02581 , H01L21/0262 , Y10S148/045 , Y10S148/064
摘要： A process for the formation of a functional deposited film containing atoms belonging to the group II and VI of the periodical table as the main constituent atoms by introducing, into a film forming space for forming a deposited film on a substrate disposed therein, a group II compound (1) and a group VI compound (2) as the film-forming raw material and, if required, a compound (3) containing an element capable of controlling valence electrons for the deposited film as the constituent element each in a gaseous state, or in a state where at least one of such compounds is previously activated in an activation space disposed separately from the film forming space, while forming hydrogen atoms in an excited state which cause chemical reaction with at least one of the compounds (1), (2) and (3) in the gaseous state or in the activated state in an activation space different from the film forming space and introducing them into the film-forming space, thereby forming the functional deposited film on the substrate, wherein the hydrogen atoms in the excited state are formed from a hydrogen gas or a gas mixture composed of a hydrogen gas and a rare gas by means of a microwave plasma generated in a plasma generation chamber disposed in a cavity resonator integrated with two impedance matching circuits in a microwave circuit and the excited state of the hydrogen atom is controlled.

82. 发明授权

US4415531A Semiconductor materials 失效
标题翻译：半导体材料
公开(公告)号：US4415531A
公开(公告)日：1983-11-15
申请号：US392190
申请日：1982-06-25
申请人： Henry Holloway
发明人： Henry Holloway
IPC分类号： C01G21/00 , H01L21/363 , H01L29/24 , H01L31/032
CPC分类号： C01G21/006 , H01L21/0242 , H01L21/02568 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02631 , H01L29/245 , H01L31/032 , C01P2002/76 , C01P2002/77 , Y10S420/903
摘要： A novel pseudobinary alloy of Pb.sub.1-x M.sub.x S, wherein 0
摘要翻译： Pb1-xMxS的新型假二元合金，其中0

83. 发明授权

US4102766A Process for doping high purity silicon in an arc heater 失效
标题翻译：在电弧加热器中掺杂高纯度硅的工艺
公开(公告)号：US4102766A
公开(公告)日：1978-07-25
申请号：US787634
申请日：1977-04-14
申请人： Maurice G. Fey
发明人： Maurice G. Fey
IPC分类号： C30B29/06 , C01B33/033 , C30B25/02 , H01L21/205 , H01L21/26 , H01L21/265 , H01L29/167 , H01L31/04 , H01L31/18 , H05B7/18 , B01K1/00 , C01B33/00 , C04B35/00 , H01L3/06
CPC分类号： C30B29/06 , C01B33/033 , C30B25/02 , H01L21/02532 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/0262 , H01L29/167 , H01L31/1804 , H05B7/185 , Y02E10/547 , Y02P70/521
摘要： A method for doping solar grade silicon characterized by the steps of feeding into an arc heated gas stream a quantity of a metal reductant such as an alkali metal or an alkaline-earth metal and also feeding into the stream a quantity of a silicon halide and of a corresponding halide of a doping agent such as arsenic to react with the metal reductant to produce reaction products including a salt of a metal reductant and a mixture of liquid silicon and doping agent, and separating the mixture from the salt of the metal reductant.
摘要翻译：一种用于掺杂太阳能级硅的方法，其特征在于以下步骤：将一定数量的金属还原剂（例如碱金属或碱土金属）进料到电弧加热的气流中，并将一定量的卤化硅和相应的掺杂剂如砷的卤化物与金属还原剂反应以产生包括金属还原剂的盐和液态硅和掺杂剂的混合物的反应产物，并将该混合物与金属还原剂的盐分离。

84. 发明授权

US4053334A Method for independent control of volatile dopants in liquid phase epitaxy 失效
标题翻译：挥发性物质在液相外延中独立控制的方法
公开(公告)号：US4053334A
公开(公告)日：1977-10-11
申请号：US707274
申请日：1976-07-21
申请人： Roger S. Ehle , Walter Garwacki
发明人： Roger S. Ehle , Walter Garwacki
IPC分类号： C30B19/06 , C30B19/10 , H01L21/208
CPC分类号： C30B19/062 , C30B19/106 , H01L21/02392 , H01L21/02461 , H01L21/02543 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02625 , H01L21/02628 , Y10S438/925
摘要： A method for independent control of a plurality of volatile dopants in liquid phase epitaxial fabrication of doped layers of semiconductors upon a semiconductor substrate, utilizes spatially separated sources of each dopant, each source being independently temperature controlled. One dopant source is located in a melt of a carrier metal and of the elements required to form the desired semiconductor material and has the saturation concentration thereof determined by the temperature of the melt, while the remaining dopant is vaporized to create a partial pressure thereof over the melt, with control of the source temperature controlling partial pressure and therefore concentration, which is less than or equal to the solubility of the remaining dopant at the melt temperature, in the melt.

85. 发明授权

US4032950A Liquid phase epitaxial process for growing semi-insulating GaAs layers 失效
标题翻译：用于生长半绝缘GAAS层的液相外延生产工艺
公开(公告)号：US4032950A
公开(公告)日：1977-06-28
申请号：US714872
申请日：1976-08-16
申请人： G. Sanjiv Kamath , Bradley W. Smith
发明人： G. Sanjiv Kamath , Bradley W. Smith
IPC分类号： H01L21/208 , H01L33/00
CPC分类号： H01L21/02395 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02625 , H01L21/02628
摘要： Disclosed is a process for fabricating chromium-doped semi-insulating epitaxial layers of gallium arsenide which includes contacting a gallium arsenide substrate with a chromium-doped saturated solution of gallium arsenide in gallium and maintaining the solution at a relatively low liquid phase epitaxial (LPE) deposition temperature on the order of about 750.degree.-850.degree. C.

86. 发明授权

US4028147A Liquid phase epitaxial process for growing semi-insulating GaAs layers 失效
标题翻译：用于生长半绝缘GaAs层的液相外延工艺
公开(公告)号：US4028147A
公开(公告)日：1977-06-07
申请号：US714726
申请日：1976-08-16
申请人： G. Sanjiv Kamath , Bradley W. Smith
发明人： G. Sanjiv Kamath , Bradley W. Smith
IPC分类号： H01L21/208 , H01L21/76 , H01L27/15 , H01L29/20
CPC分类号： H01L27/153 , H01L21/02463 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02625 , H01L21/02628 , H01L21/7605 , H01L29/20
摘要： A process for forming a monolithic gallium arsenide structure having a plurality of electrically insulated gallium arsenide regions.
摘要翻译：一种用于形成具有多个电绝缘砷化镓区域的单片砷化镓结构的方法。

87. 发明授权

US4013533A Volatilization and deposition of a semi-conductor substance and a metallic doping impurity 失效
标题翻译：半导体物质和金属掺杂杂质的挥发和沉积
公开(公告)号：US4013533A
公开(公告)日：1977-03-22
申请号：US561946
申请日：1975-03-25
申请人： Gerard Cohen-Solal , Alain Zozime , Claude Sella
发明人： Gerard Cohen-Solal , Alain Zozime , Claude Sella
IPC分类号： H01J37/317 , C23C14/35 , C23C14/42 , C30B23/08 , H01L21/00 , H01L21/203 , H01L21/208 , H01L21/265 , H01L21/363 , H01L21/365 , H01L31/00 , H01L31/04 , H01L31/10 , C23C15/00
CPC分类号： H01L21/00 , C23C14/352 , C23C14/355 , H01L21/02381 , H01L21/02411 , H01L21/02562 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02631 , H01L31/00 , Y10S148/026 , Y10S148/063 , Y10S148/169 , Y10S438/925
摘要： A method and apparatus for producing a thin semi-conductor coating on a substrate in a vacuum enclosure, by depositing on the substrate a semi-conductor substance volatilized by a plasma from a source in the enclosure and also depositing on the substrate a metallic doping impurity volatilized by the plasma from another source in the enclosure.
摘要翻译：一种用于在真空外壳中的基板上制造薄半导体涂层的方法和装置，通过在基板上沉积由等离子体从外壳中的源挥发的半导体物质，并且还在基板上沉积金属掺杂杂质通过等离子体从外壳中的另一个源挥发。

88. 发明授权

US3960618A Epitaxial growth process for compound semiconductor crystals in liquid phase 失效
标题翻译：化合物半导体晶体在液相中的外延生长过程
公开(公告)号：US3960618A
公开(公告)日：1976-06-01
申请号：US561795
申请日：1975-03-25
申请人： Masao Kawamura , Kazuhiro Ito , Makoto Morioka , Yuichi Ono , Sachio Ishioka , Kazuhiro Kurata
发明人： Masao Kawamura , Kazuhiro Ito , Makoto Morioka , Yuichi Ono , Sachio Ishioka , Kazuhiro Kurata
IPC分类号： B60C9/20 , C30B19/00 , C30B19/12 , C30B29/40 , H01L21/208 , H01L33/28 , H01L33/30 , H01L7/38
CPC分类号： B60C9/2009 , C30B19/12 , H01L21/02392 , H01L21/02395 , H01L21/02433 , H01L21/02543 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02625 , H01L21/02628 , Y10S438/955
摘要： In an epitaxial growth process for compound semiconductor crystals in a liquid phase, a substrate crystal is brought into contact with an etching solution containing as solute a predetermined amount of at least one constituent of the substrate crystal, which is smaller than that of a saturated solution, after heating them at a temperature for crystal growth. The substrate crystal is kept in contact with the solution during a period of time sufficient to remove a surface portion of the substrate crystal. Then the substrate crystal is brought into contact with a solution for crystal growth containing a substance to be grown as solute and a crystal of the substance is grown epitaxially on an exposed clean surface of the substrate crystal.
摘要翻译：在液相中化合物半导体晶体的外延生长工艺中，使基板晶体与含有预定量的至少一种基板晶体成分的溶质作为溶质接触，所述至少一种成分比饱和溶液在使晶体生长的温度下加热。衬底晶体在足以去除衬底晶体的表面部分的时间段内与溶液保持接触。然后使衬底晶体与用于晶体生长的溶液接触，所述溶液含有要作为溶质生长的物质，并且物质的晶体在衬底晶体的暴露的清洁表面上外延生长。

89. 发明授权

US3948693A Process for the production of yellow glowing gallium phosphide diodes 失效
标题翻译：用于生产黄色发光的磷化镓二极管的方法
公开(公告)号：US3948693A
公开(公告)日：1976-04-06
申请号：US490997
申请日：1974-07-23
申请人： Claus Weyrich , Guenter Winstel
发明人： Claus Weyrich , Guenter Winstel
IPC分类号： H01L21/208 , H01L21/324 , H01L33/00 , H05B20060101 , H05B33/10 , H01L7/38
CPC分类号： H01L33/0062 , H01L21/0254 , H01L21/02543 , H01L21/02573 , H01L21/02581 , H01L21/02625 , H01L21/02628 , Y10S117/906
摘要： Process for the production of yellow glowing gallium phosphide diodes by a liquid phase epitaxial process in which the substrate is covered with a gallium melt saturated with gallium phosphide, elemental tellurium, oxygen and nitrogen are injected into the melt as dopants, a first layer is grown on the substrate from the melt, and then a zinc containing layer is deposited over the first layer, and the temperatures of the layers are controlled to cause diffusion of the zinc into the first layer to a predetermined depth.
摘要翻译：通过液相外延工艺生产黄色发光的磷化镓二极管的方法，其中衬底被用磷化镓，元素碲，氧和氮饱和的镓熔体覆盖，作为掺杂剂注入到熔体中，第一层生长在熔融物的基材上，然后在第一层上沉积含锌层，并且控制层的温度以使锌扩散到第一层到预定深度。

90. 发明授权

US3812516A Spontaneously emitting hetero-structure junction diodes 失效
标题翻译：自发发射异质结结二极管
公开(公告)号：US3812516A
公开(公告)日：1974-05-21
申请号：US30737772
申请日：1972-11-17
申请人： BELL TELEPHONE LABOR INC
发明人： HAYASHI I
IPC分类号： H01L21/208 , H01L33/00 , H01S5/32 , H01L15/02
CPC分类号： H01L33/0025 , H01L21/02395 , H01L21/02546 , H01L21/02576 , H01L21/02579 , H01L21/02581 , H01L21/02625 , H01L21/02628 , H01L21/02658 , H01S5/32
摘要： A light emitting heterostructure diode includes a multilayered structure having a common conductivity type heterojunction and a p-n junction separated therefrom by a distance less than the diffusion length of minority carriers, thereby defining an intermediate region bounded by said junctions. In a single heterostructure (SH) diode there is one such heterojunction separating narrow and wide band gap regions of the same conductivity type and the p- n junction is a p-n homojunction formed in one instance by the diffusion of impurities into the narrow band gap region. When provided with an appropriate resonator, a confinement effect produced by an energy step (at the heterojunction) in the conduction band permits the SH diode to lase at higher temperatures and lower thresholds than heretofore possible, radiative electron-hole recombination occurring between the conduction and valence bands. In a double heterostructure (DH) the diode is provided with a second heterojunction positioned on the side of the p-n junction remote from the other heterojunction, or positioned coincident with the p-n junction, thereby defining an intermediate region between the pair of heterojunctions. When provided with an appropriate resonator the DH diode exhibits lower thresholds at higher temperatures than even the aforementioned SH diode. In both diodes additional improvment in the threshold occurs if the diode is provided with deep impurity levels or deep band tails. Without a resonator, both the SH and DH diodes function as electroluminescent diodes with radiation being emitted from the intermediate region through the wide band gap region, thereby advantageously resulting in lower absorption losses and higher efficiency. Dome-like configurations of the wide band gap region of this diode are also disclosed.

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