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81. 发明授权

US5756238A Lithographic print bias/overlay target and applied metrology 失效
公开(公告)号：US5756238A
公开(公告)日：1998-05-26
申请号：US861204
申请日：1997-05-21
申请人： Roger Lawrence Barr , Patrick J. Couillard
发明人： Roger Lawrence Barr , Patrick J. Couillard
IPC分类号： G03F7/20 , G03F7/207 , G03F9/00 , H01L21/30 , G03F1/00
CPC分类号： G03F7/70558 , G03F7/706 , G03F7/70625 , G03F7/70633 , G03F7/70641 , G03F9/70 , G03F9/00
摘要： A print bias target is imaged in a single layer of light-sensitive material. The print bias target is made up of a pair of concentric geometric shapes in which a plurality of target regions forms a plurality of isolated edges. Each target region is of a different image structure than each other target region immediately adjacent thereto. The positioning of a given isolated edge in the print bias target is determined relative to a corresponding isolated edge in the design image from which the print bias target was imaged. Focus setting and/or exposure setting for a lithographic system to minimize print bias may be determined using print bias information obtained from a print bias target matrix of varying exposure and focus. An imaging aberration may also be identified using print bias information from a print bias target matrix, such as lithographic astigmatism, lithographic coma and vibration. A slope of an imaging profile may also be determined from print bias information overlay may be determined by imaging a print bias target on top of a prior level image to create an overlay target, determining a center of the prior level image, determining an average center of the print bias target and determining a location of the average center relative to the prior level image center, thereby determining the overlay.

82. 发明授权

US5747202A Projection exposure method 失效
标题翻译：制造半导体器件的方法和投影曝光方法，包括以下步骤：将二维栅格图案或图案暴露在其不同焦点位置的晶片上
公开(公告)号：US5747202A
公开(公告)日：1998-05-05
申请号：US927261
申请日：1997-09-11
申请人： Hiroshi Tanaka
发明人： Hiroshi Tanaka
IPC分类号： G03F9/00 , G03F7/20 , H01L21/027 , H01L21/30 , H01L21/66 , C03C5/02 , G01B11/03
CPC分类号： G03F7/70591 , G03F7/70641 , G03F9/70
摘要： A method for manufacturing semiconductor devices includes the steps of exposing a pattern for focus measurement, formed on a surface of a reticle and comprising a two-dimensional grid pattern, to radiation and projecting the pattern for focus measurement onto a plurality of regions of an inspection wafer, on which a resist has been coated by a resist coating apparatus, using a projection exposure apparatus; developing the pattern for focus measurement projected on the inspection wafer with a developing apparatus; measuring the developed pattern for focus measurement on a plurality of regions of the inspection wafer with the projection exposure apparatus to obtain the focus position and the inclination of the plane of projection of the image of the pattern for focus measurement of the reticle, and setting the focus position and the inclination of the plane of projection in the projection exposure apparatus as a focus offset and an amount of correction of the inclination of the plane of projection; and coating the surface of the wafer with resist using the resist coating apparatus, exposing a pattern formed on the surface of the reticle to radiation and projecting the pattern onto the resist on the surface of the wafer using the projection exposure apparatus and using the set focus offset and the set amount of correction, and developing the resist using the developing apparatus.
摘要翻译：一种制造半导体器件的方法包括以下步骤：将形成在掩模版表面上并包括二维栅格图案的聚焦测量图案曝光，以将用于焦点测量的图案放射和投影到检查的多个区域使用投影曝光装置在抗蚀剂涂布装置上涂布抗蚀剂的晶片; 用显影装置展开投影在检查晶片上的聚焦测量图案; 利用投影曝光装置，在检查晶片的多个区域上测量用于焦点测量的显影图案，以获得焦点位置和用于掩模版的焦点测量的图案的图像的投影平面的倾斜度，并将聚焦位置和投影平面投影的倾斜度作为聚焦偏移和投影平面倾斜度的校正量; 并使用抗蚀剂涂覆装置用抗蚀剂涂覆晶片的表面，将形成在掩模版表面上的图案曝光，并使用投影曝光装置将图案投影到晶片表面上的抗蚀剂上，并使用设定焦点偏移和设定的校正量，以及使用显影装置显影抗蚀剂。

83. 发明授权

US5737063A Projection exposure apparatus 失效
标题翻译：投影曝光装置
公开(公告)号：US5737063A
公开(公告)日：1998-04-07
申请号：US620530
申请日：1996-03-25
申请人： Takashi Miyachi
发明人： Takashi Miyachi
IPC分类号： G03F7/20 , G03F7/207 , G03F9/00 , G03B27/53
CPC分类号： G03F7/70358 , G03F7/70716 , G03F9/70
摘要： Disclosed is a projection exposure apparatus which is able to realize stabilized focusing control which presents highly followable performances for the photosensitive substrate with few irregularities and will work without failure even for a photosensitive substrate having rough irregularities. A determining section determines whether the velocity instructions data obtained by a difference between a detected position of the substrate and a target position and a difference between the detected tilt of the substarate and a target tilt falls within respective predetermined allowable ranges. During the affirmative judgment by the determining section, a controller performs focusing and leveling control with high precision. When the determining section makes a negative judgment, the controller effects focusing control with the tilt of the wafer kept at constant.
摘要翻译：公开了一种能够实现稳定的聚焦控制的投影曝光装置，其对于具有少量不规则性的感光基片呈现出高度可追溯性，并且即使对于具有粗糙不规则的感光基底也将起作用。确定部分确定由基板的检测位置和目标位置之间的差异以及检测到的下位面倾斜与目标倾斜之间的差是否落入相应的预定允许范围内的速度指令数据。在判断部的肯定判断中，控制器以高精度进行聚焦和调平控制。当确定部进行否定判断时，控制器使得晶片的倾斜保持恒定的聚焦控制。

84. 发明授权

US5731877A Automated system utilizing self-labeled target by pitch encoding 失效
标题翻译：自动系统利用自标签的目标通过音调编码
公开(公告)号：US5731877A
公开(公告)日：1998-03-24
申请号：US727138
申请日：1996-10-08
申请人： Christopher Perry Ausschnitt
发明人： Christopher Perry Ausschnitt
IPC分类号： G03F7/20 , G03F9/00 , G01B11/14 , G01B11/00
CPC分类号： G03F7/70625 , G03F7/70633 , G03F9/70
摘要： An automated system utilizes self-labeled targets to locate and identify specific targets. Lithographic targets used for alignment, measurement and/or testing of features on a semiconductor substrate are assigned a unique pitch to identify the target. The targets have a plurality of elements with at least three edges distinguishable by an optical metrology tool. An invariant and unique process characteristic is defined by distances between elements or three or more edges, which is the pitch of the target. An optical metrology tool having a microprocessor and memory resolves the target elements, measures the distance between elements or edges, calculates the target pitch, compares it to the target pitch in memory, and determines whether the actual target pitch equals the stored target pitch to identify the target on the substrate.
摘要翻译：自动化系统使用自标记的目标来定位和识别特定的目标。用于对准，测量和/或测试半导体衬底上的特征的光刻目标被赋予唯一的间距以识别目标。目标具有多个元件，其中至少三个边缘可由光学计量学工具区分。不变和唯一的过程特征由元素之间的距离或三个或更多边缘（即目标的间距）定义。具有微处理器和存储器的光学测量工具解析目标元件，测量元件或边缘之间的距离，计算目标间距，将其与存储器中的目标间距进行比较，并确定实际目标间距是否等于存储的目标间距以识别目标在基板上。

85. 发明授权

US5721605A Alignment device and method with focus detection system 失效
公开(公告)号：US5721605A
公开(公告)日：1998-02-24
申请号：US409403
申请日：1995-03-24
申请人： Shinji Mizutani
发明人： Shinji Mizutani
IPC分类号： B23K26/04 , G03F7/20 , G03F9/00 , G03B27/42 , G01B11/00
CPC分类号： G03F7/70641 , B23K26/04 , B23K26/043 , G03F9/70
摘要： An alignment device which may include an objective optical system for detecting the light from a first mark formed, for alignment, in a first mark area on a substrate and the light from a second mark formed, for alignment, in a second mark area, a first detection optical system having a first detection area within the viewing field of the objective optical system and adapted to detect the light from the first mark through the objective optical system, a second detection optical system having a second detection area, different from the first detection area, within the viewing field of the objective optical system and adapted to detect the light from the second mark through the objective optical system, and a focus detection system for detecting the deviation of the first mark area with respect to the focal plane of the first detection optical system and the deviation of the second mark area with respect to the focal plane of the second detection optical system, by irradiating the first and second detection areas respective with light beams and receiving the reflected lights therefrom.

86. 发明授权

US5696374A Optical encoder using doubled diffraction angle based on first and second diffraction gratings 失效
$Optical encoder using doubled diffraction angle based on first and second diffraction gratings$
标题翻译：基于第一和第二衍射光栅的双重衍射角光学编码器
公开(公告)号：US5696374A
公开(公告)日：1997-12-09
申请号：US711598
申请日：1996-09-10
申请人： Atsushi Fukui , Kanji Nishii , Kenji Takamoto , Masami Ito
发明人： Atsushi Fukui , Kanji Nishii , Kenji Takamoto , Masami Ito
IPC分类号： G01B11/00 , G01D5/38 , G02B5/18 , G02B27/42 , G03F9/00 , G01B9/02
CPC分类号： G03F9/70 , G01D5/38
摘要： An optical encoder includes: a light source; a first grating plate having a first diffraction grating for diffracting a light beam emitted from the light source; a second grating plate having a second diffraction grating for further diffracting the light beam diffracted by the first diffraction grating; a reflector for reflecting the light beam from the second grating plate so as to allow the light beam to reenter the second grating plate; and a light-receiving portion for receiving the light beam reflected by the reflector and successively diffracted by the second and first grating plates, wherein a diffraction angle of plus and minus first-order diffracted light beams of the first diffraction grating is substantially equal to that of the plus and minus first-order diffracted light beams of the second diffraction grating, and the light-receiving portion generates an electric signal in accordance with the amount of the plus and minus first-order diffracted light beams of the first diffraction grating.
摘要翻译：光学编码器包括：光源; 第一光栅板，具有用于衍射从光源发射的光束的第一衍射光栅; 第二光栅板，具有用于进一步衍射由第一衍射光栅衍射的光束的第二衍射光栅; 用于反射来自第二光栅板的光束以使光束重新进入第二光栅板的反射器; 以及光接收部分，用于接收由反射器反射并被第二和第一光栅板连续衍射的光束，其中第一衍射光栅的正，负一级衍射光束的衍射角基本上等于第二衍射光栅的正，负一级衍射光束，并且光接收部分根据第一衍射光栅的正，负一级衍射光束的量产生电信号。

87. 发明授权

US5684595A Alignment apparatus and exposure apparatus equipped therewith 失效
标题翻译：对准装置和配备的曝光装置
公开(公告)号：US5684595A
公开(公告)日：1997-11-04
申请号：US720212
申请日：1996-09-26
申请人： Masaki Kato , Hideo Mizutani , Masashi Tanaka
发明人： Masaki Kato , Hideo Mizutani , Masashi Tanaka
IPC分类号： G03F7/22 , G03F9/00 , H01L21/027 , H01L21/30 , G01B11/00
CPC分类号： G03F9/70 , G03F9/7065 , G03F9/7088
摘要： An alignment apparatus for aligning a first object (reticle) with a second object (wafer) when irradiating a projection light on the first object to project a pattern of the first object onto the second object through a projection optical system. The apparatus includes an illumination optical system for illuminating a plurality marks on the second object with an alignment light having a wavelength band different from the projection light, a detection optical system for receiving the alignment light from the illuminated mark through the projection optical system to detect an image of the mark formed by the alignment light, and a compensating optical system arranged within the detection optical system for compensating a chromatic aberration of magnification caused by the projection optical system due to the differences among the wavelengths within the wavelength band of the alignment light.
摘要翻译：一种对准装置，用于当通过投影光学系统照射第一物体上的投影光以将第一物体的图案投影到第二物体上时，使第一物体（光罩）与第二物体（晶片）对准。该装置包括：照射光学系统，用于利用具有与投射光不同的波长带的对准光来照射第二物体上的多个标记;检测光学系统，用于通过投影光学系统接收来自照明标记的对准光，以检测由对准光形成的标记的图像和布置在检测光学系统内的补偿光学系统，用于补偿由于对准光的波长带内的波长之间的差异而由投影光学系统引起的倍率色像差。

88. 发明授权

US5680200A Inspection apparatus and method for optical system, exposure apparatus provided with the inspection apparatus, and alignment apparatus and optical system thereof applicable to the exposure apparatus 失效
标题翻译：具有光学系统的检查装置和方法，设置有检查装置的曝光装置，以及适用于曝光装置的对准装置及其光学系统
公开(公告)号：US5680200A
公开(公告)日：1997-10-21
申请号：US651098
申请日：1996-09-05
申请人： Ayako Sugaya , Masahiro Nakagawa , Tadashi Nagayama
发明人： Ayako Sugaya , Masahiro Nakagawa , Tadashi Nagayama
IPC分类号： G03F7/20 , G03F9/00 , G03B27/42 , G03B27/58
CPC分类号： G03F7/706 , G03F7/70241 , G03F7/70633 , G03F7/70641 , G03F9/70
摘要： The present invention relates to inspection apparatus and method in which, based on images under a plurality of focus conditions formed by way of an optical system to be inspected, namely, using images under a plurality of defocal conditions, tendency in positional change or change of asymmetry between the images is calculated so as to specify at least one of aberration condition and optical adjustment condition of the optical system to be inspected as well as to exposure apparatuses and overlay accuracy measurement apparatuses provided with the inspection apparatus. In addition, the present invention relates to an image-forming optical system suitable to an alignment apparatus which is applicable to the exposure apparatuses. This image-forming optical system comprises a correction optical system for intentionally generating asymmetric aberration or symmetric aberration in the image-forming optical system and a decentering mechanism for decentering the correction optical system to cancel asymmetric aberration or symmetric aberration in the image-forming optical system.
摘要翻译：本发明涉及一种检查装置和方法，其中基于通过待检查的光学系统形成的多个聚焦条件下的图像，即，使用多个放置条件下的图像，位置变化或变化的趋势计算图像之间的不对称性，以便指定要检查的光学系统的像差条件和光学调节条件以及设置有检查装置的曝光装置和重叠精度测量装置中的至少一个。此外，本发明涉及适用于可应用于曝光装置的对准装置的图像形成光学系统。该图像形成光学系统包括用于在图像形成光学系统中有意产生不对称像差或对称像差的校正光学系统和用于使校正光学系统偏心以消除图像形成光学系统中的非对称像差或对称像差的偏心机构。

89. 发明授权

US5675418A Pattern alignment mark of semiconductor device 失效
标题翻译：半导体器件的图案对准标记
公开(公告)号：US5675418A
公开(公告)日：1997-10-07
申请号：US499272
申请日：1995-07-07
申请人： Sang Man Bae , Byoung Il Choi
发明人： Sang Man Bae , Byoung Il Choi
IPC分类号： G03F7/00 , G03F7/20 , G03F9/00 , G01B11/00
CPC分类号： G03F7/70633 , G03F9/70
摘要： A pattern alignment mark equipped with at least one designated measuring pattern for an alignment during the process of fabrication of semiconductor devices, a means for attenuating light reflection on the pattern with higher light reflection intensity among said designated measuring patterns, said attenuating means preventing the occurrence of a pattern alignment error due to the differences in the light reflection intensities while measuring the overlay accuracy of patterns, thus enhancing the yield and reliability of fabrication by achieving the stabilization of the process and the reduction of the process time.
摘要翻译：在半导体器件的制造过程中配备有至少一个用于对准的指定测量图案的图案对准标记，用于衰减在所述指定测量图案中具有较高光反射强度的图案上的光反射的装置，所述衰减装置防止发生在测量图案的重叠精度的同时由于光反射强度的差异导致的图案对准误差，从而通过实现工艺的稳定化和缩短处理时间来提高制造的成品率和可靠性。

90. 发明授权

US5671057A Alignment method 失效
标题翻译：对齐方法
公开(公告)号：US5671057A
公开(公告)日：1997-09-23
申请号：US698095
申请日：1996-08-15
申请人： Hidemi Kawai
发明人： Hidemi Kawai
IPC分类号： G03F7/20 , G03F9/00 , H01L21/027 , G01B11/00
CPC分类号： G03F9/70
摘要： An alignment method for use with an exposure apparatus including first and second alignment sensor systems for establishing alignment between a reticle and a wafer. A first one of reticles in a reticle set is loaded on the exposure apparatus and the position of the pattern center of the reticle is determined. At the same time, the position of the detection center of the first alignment sensor system is determined and the baseline amount B.sub.11, which is the distance from the pattern center of the reticle to the detection center of the first alignment sensor system, is determined. Then, the baseline amount B.sub.21 of the second alignment sensor system is determined, and the difference .DELTA.B (=B.sub.21 -B.sub.11) between the baseline amounts is calculated. For any of the second and later ones of the reticles in the reticle set, the baseline amount B.sub.12 of the first alignment sensor system is calculated in the same manner as the above whereas the baseline amount B.sub.22 of the second alignment sensor system is calculated as: B.sub.22 =B.sub.12 +.DELTA.B. Fine alignment procedure is performed by using the second alignment sensor system and based on the baseline B.sub.22 thus calculated, and the pattern of the reticle is printed on each of the shot areas on a substrate by exposure.
摘要翻译：一种与曝光装置一起使用的对准方法，包括用于在掩模版和晶片之间建立对准的第一和第二对准传感器系统。将掩模版组中的第一个掩模版装载在曝光装置上，并确定掩模版的图案中心的位置。同时，确定第一对准传感器系统的检测中心的位置，并且确定基准线数量B11，该基线量B11是从第一对准传感器系统的标线图案的图案中心到检测中心的距离。然后，确定第二对准传感器系统的基线量B21，并且计算基线量之间的差ΔTA（= B21-B11）。对于标线组中的第二和后一个掩模版中的任一个，以与上述相同的方式计算第一对准传感器系统的基线量B12，而第二对准传感器系统的基线量B22被计算为： B22 = B12 + DELTA B.通过使用第二对准传感器系统并且基于如此计算的基线B22执行精细对准过程，并且通过曝光将印模的图案印刷在基板上的每个照射区域上。

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