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    • 1. 发明授权
    • Projection exposure method
    • 制造半导体器件的方法和投影曝光方法,包括以下步骤:将二维栅格图案或图案暴露在其不同焦点位置的晶片上
    • US5747202A
    • 1998-05-05
    • US927261
    • 1997-09-11
    • Hiroshi Tanaka
    • Hiroshi Tanaka
    • G03F9/00G03F7/20H01L21/027H01L21/30H01L21/66C03C5/02G01B11/03
    • G03F7/70591G03F7/70641G03F9/70
    • A method for manufacturing semiconductor devices includes the steps of exposing a pattern for focus measurement, formed on a surface of a reticle and comprising a two-dimensional grid pattern, to radiation and projecting the pattern for focus measurement onto a plurality of regions of an inspection wafer, on which a resist has been coated by a resist coating apparatus, using a projection exposure apparatus; developing the pattern for focus measurement projected on the inspection wafer with a developing apparatus; measuring the developed pattern for focus measurement on a plurality of regions of the inspection wafer with the projection exposure apparatus to obtain the focus position and the inclination of the plane of projection of the image of the pattern for focus measurement of the reticle, and setting the focus position and the inclination of the plane of projection in the projection exposure apparatus as a focus offset and an amount of correction of the inclination of the plane of projection; and coating the surface of the wafer with resist using the resist coating apparatus, exposing a pattern formed on the surface of the reticle to radiation and projecting the pattern onto the resist on the surface of the wafer using the projection exposure apparatus and using the set focus offset and the set amount of correction, and developing the resist using the developing apparatus.
    • 一种制造半导体器件的方法包括以下步骤:将形成在掩模版表面上并包括二维栅格图案的聚焦测量图案曝光,以将用于焦点测量的图案放射和投影到检查的多个区域 使用投影曝光装置在抗蚀剂涂布装置上涂布抗蚀剂的晶片; 用显影装置展开投影在检查晶片上的聚焦测量图案; 利用投影曝光装置,在检查晶片的多个区域上测量用于焦点测量的显影图案,以获得焦点位置和用于掩模版的焦点测量的图案的图像的投影平面的倾斜度,并将 聚焦位置和投影平面投影的倾斜度作为聚焦偏移和投影平面倾斜度的校正量; 并使用抗蚀剂涂覆装置用抗蚀剂涂覆晶片的表面,将形成在掩模版表面上的图案曝光,并使用投影曝光装置将图案投影到晶片表面上的抗蚀剂上,并使用设定焦点 偏移和设定的校正量,以及使用显影装置显影抗蚀剂。
    • 2. 发明授权
    • Ascension pipe and ascension pipe cap sealers for by-product coke ovens
    • 用于副产品焦炉的升压管和升管管盖密封件
    • US4395505A
    • 1983-07-26
    • US387914
    • 1982-06-14
    • Ronald S. Doles
    • Ronald S. Doles
    • C03C3/064C03C3/089C10B25/16C10B27/06C03C5/02C04B35/00
    • C03C3/089C03C3/064C10B25/16C10B27/06
    • A water-based paste which is curable to a flowing glass which is made generally from boric acid, silica flour, or diatomite silica. Generally, silica flour is added for pipe sealer or diatomite-type silica for cap sealers. Optional additives are latex and Kelzan for modifying rheology and trisodium phosphate to fine control the softening point. These compositions may be utilized in standpipes and collecting mains in coke ovens. The softening point of the composition is selected so that it is compatible with the operation of the coke oven. Softening temperatures for these compositions range from about 400.degree. C. to about 750.degree. C. and the boric acid and silica components were selected with a particle size ranging from about 44-210 microns.
    • 一种可通过硼酸,二氧化硅粉或硅藻土二氧化硅制成的流动玻璃固化的水性糊剂。 一般来说,加入二氧化硅粉末用于封口剂或硅藻土型二氧化硅用于封口机。 任选的添加剂是胶乳和Kelzan,用于改变流变性和磷酸三钠以精细控制软化点。 这些组合物可用于立管中并在焦炉中收集干管。 选择组合物的软化点,使其与焦炉的操作相容。 这些组合物的软化温度范围为约400℃至约750℃,硼酸和二氧化硅组分的粒径选自约44-210微米。
    • 3. 发明授权
    • Glass enamel fluxes
    • 玻璃搪瓷助焊剂
    • US4158080A
    • 1979-06-12
    • US949445
    • 1978-10-10
    • Dale R. Wexell
    • Dale R. Wexell
    • C03C8/12C03C17/02B32B7/02B32B17/06C03C5/02
    • C03C8/12C03C17/02C03C2205/00Y10T428/24942
    • The invention disclosed is a family of enamel fluxes that forms the basis for enamels used in decorating opal glasses where the glasses have softening points in excess of 760.degree. C. and coefficients of thermal expansion (25.degree.-300.degree. C.) of 70-85.times.10.sup.-7 /.degree. C. The enamel fluxes have softening points in the range of 550.degree.-575.degree. C., toxic metal release values below FDA prescribed standards, coefficients of thermal expansion in the range of 65-75.times.10.sup.-7 /.degree. C. and preferably at least 5 units below the coefficient of the opal glass, and fire to a high gloss in a firing cycle of less than 10 minutes having a maximum temperature below 720.degree. C. They have compositions that form a family in the Li.sub.2 O-Na.sub.2 O-B.sub.2 O.sub.3 -TiO.sub.2 -CdO-ZrO.sub.2 -PbO-SiO.sub.2 system.
    • 所公开的发明是一种搪瓷助熔剂,其形成用于装饰眼镜的搪瓷的基础,其中玻璃的软化点超过760℃,热膨胀系数(25-300℃)为70- 85-107 /℃。搪瓷助熔剂的软化点在550°-575℃范围内,有毒金属释放值低于FDA规定的标准,热膨胀系数在65-75×10-7 /℃范围内 并且优选在蛋白石玻璃的系数之下至少5个单位,并且在最低温度低于720℃的低于10分钟的烧制循环中发射到高光泽度。它们具有在Li 2 O- Na2O-B2O3-TiO2-CdO-ZrO2-PbO-SiO2体系。