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81. 发明申请

US20030090286A1 Method and apparatus for phase-shifting an optical beam in a semiconductor substrate 有权
公开(公告)号：US20030090286A1
公开(公告)日：2003-05-15
申请号：US10011216
申请日：2001-11-15
发明人： Dean A. Samara-Rubio
IPC分类号： G01R031/26
CPC分类号： G02F1/3133 , G02F1/025 , G02F2201/063
摘要： A semiconductor-based gain optical phase-shifting device, method and apparatus. In one aspect of the present invention, an apparatus according to an embodiment of the present invention includes a semiconductor substrate through which an optical beam is to be directed along an optical path through the semiconductor substrate. A plurality of floating charge modulated regions are disposed along the optical path. A phase of the optical beam is responsive to a charge concentration in each of the plurality of floating charge modulated regions. A plurality of tunneling insulation layers are disposed between each of the plurality of floating charge modulated regions and the semiconductor substrate. A plurality of control nodes are disposed proximate to the plurality of floating charge modulated regions. Each of the control nodes control the charge concentration in a respective one of the plurality of floating charge modulated regions. A plurality of blocking insulation layers disposed between each of the plurality of control nodes and the plurality of floating charge modulated regions.

82. 发明申请

US20020126976A1 Electro-optic device 有权
标题翻译：电光装置
公开(公告)号：US20020126976A1
公开(公告)日：2002-09-12
申请号：US09874999
申请日：2001-06-07
申请人： Bookham Technology plc
发明人： Ian Edward Day
IPC分类号： G02B006/122
CPC分类号： G02F1/025 , G02F2201/063 , G02F2201/122 , G02F2202/06 , G02F2202/105
摘要： An electro-optic device is disclosed for altering the density of charge carriers within an integrated optical waveguide. The device includes a substrate, and an integrated optical waveguide extending across the substrate with two doped regions being provided such that an electrical signal can be applied across the doped regions to alter the density of charge carriers within the waveguide. The doped regions can each include a plurality of doped areas spaced apart from each other along the length of the waveguide.
摘要翻译：公开了一种用于改变集成光波导内的电荷载流子密度的电光器件。该器件包括衬底和跨越衬底延伸的集成光波导，其中提供两个掺杂区域，使得可以跨越掺杂区域施加电信号以改变波导内的电荷载流子的密度。掺杂区域可以各自包括沿着波导的长度彼此间隔开的多个掺杂区域。

83. 发明申请

US20020122615A1 Multi-layer dispersion-engineered waveguides and resonators 失效
标题翻译：多层分散工程波导和谐振器
公开(公告)号：US20020122615A1
公开(公告)日：2002-09-05
申请号：US10037966
申请日：2001-12-21
发明人： Oskar J. Painter , David W. Vernooy , Kerry J. Vahala
IPC分类号： G02B006/26 , G02B006/10 , G02B006/28
CPC分类号： G02F1/3137 , B82Y20/00 , G02B6/10 , G02B6/12007 , G02B6/122 , G02B6/132 , G02B6/266 , G02B6/30 , G02B2006/12097 , G02B2006/12128 , G02B2006/12142 , G02B2006/12145 , G02B2006/12147 , G02B2006/12159 , G02B2006/12176 , G02F1/011 , G02F1/0118 , G02F1/01708 , G02F1/225 , G02F2201/063 , G02F2201/307 , G02F2203/15
摘要： A multi-layer laterally-confined dispersion-engineered optical waveguide may include one multi-layer reflector stack for guiding an optical mode along a surface thereof, or may include two multi-layer reflector stacks with a core therebetween for guiding an optical mode along the core. Dispersive properties of such multi-layer waveguides enable modal-index-matching between low-index optical fibers and/or waveguides and high-index integrated optical components and efficient transfer of optical signal power therebetween. Integrated optical devices incorporating such multi-layer waveguides may therefore exhibit low (
摘要翻译：多层横向限制的色散工程光波导可以包括一个用于沿其表面引导光学模式的多层反射器叠层，或者可以包括两个多层反射器叠层，其间具有用于引导光学模式沿着核心。这种多层波导的分散特性使得低折射率光纤和/或波导与高折射率集成光学部件之间的模式折射率匹配和其间的光信号功率的有效传输。因此，结合这样的多层波导的集成光学器件可能呈现低（<3dB）的插入损耗。将有源层（电光，电吸收，非线性光学）结合到这样的波导中使得能够以相对低电压/低强度的控制信号主动地控制光学损耗和/或模态指数。因此，结合这样的波导的集成光学器件可能表现出较低的驱动信号要求。

84. 发明授权

US5757986A Integrated silicon pin diode electro-optic waveguide 失效
标题翻译：集成硅pin二极管电光波导
公开(公告)号：US5757986A
公开(公告)日：1998-05-26
申请号：US617810
申请日：1996-03-20
申请人： Stephen James Crampton , Arnold Peter Roscoe Harpin , Andrew George Rickman
发明人： Stephen James Crampton , Arnold Peter Roscoe Harpin , Andrew George Rickman
IPC分类号： G02F1/015 , G02F1/025 , G02F1/313 , G02F1/035 , G02B6/10
CPC分类号： G02F1/025 , G02F1/3133 , G02F1/3138 , G02F2001/0152 , G02F2201/063 , G02F2202/105
摘要： The device comprises a layer of silicon separated from a substrate by a layer of insulating material. A rib having an upper surface and two side surfaces is formed in the layer of silicon to provide a waveguide for the transmission of optical signals. A lateral doped junction is formed between the side surfaces of the rib such that an electrical signal can be applied across the junction to control the density of charge carriers across a substantial part of the cross-sectional area of the rib thereby actively altering the effective refractive index of the waveguide.
摘要翻译： PCT No.PCT / GB93 / 01983 Sec。 371日期：1996年3月20日 102（e）1996年3月20日PCT PCT 1993年9月21日PCT公布。公开号WO95 / 08787 日期：1995年3月30日该装置包括通过一层绝缘材料与衬底分离的硅层。在硅层中形成具有上表面和两个侧表面的肋，以提供用于传输光信号的波导。在肋的侧表面之间形成横向掺杂结，使得电信号可以跨越结点施加，以控制跨越肋的横截面区域的大部分的电荷载流子的密度，从而主动地改变有效折射率波导指数。

85. 发明授权

US5444802A Optical switch 失效
标题翻译：光开关
公开(公告)号：US5444802A
公开(公告)日：1995-08-22
申请号：US341929
申请日：1994-11-16
申请人： Yasuo Shibata , Masahiro Ikeda
发明人： Yasuo Shibata , Masahiro Ikeda
IPC分类号： G02F1/35 , G02B6/00
CPC分类号： G02F1/3521 , G02F2201/063 , G02F2201/066 , G02F2201/30 , G02F2202/10
摘要： A grating optical switch has at least one switch region for ON-OFF switch control of a signal light transmission and a signal light reflection, at least one input/output optical waveguide region for guiding the signal light to the switch, at least one coupler region for coupling the control light colinearly to the signal light and for guiding the control light to the switch region together with the signal light, and at least one separator region for separating the signal light and the control light. The switch region transmits the signal light when the control light is coupled while reflecting the signal light when the control light is not coupled.
摘要翻译：光栅光开关具有用于信号光透射和信号光反射的ON-OFF开关控制的至少一个开关区域，用于将信号光引导至开关的至少一个输入/输出光波导区域，至少一个耦合器区域用于将控制光共线耦合到信号光并将控制光与信号光一起引导到开关区域，以及用于分离信号光和控制光的至少一个分离器区域。当控制光不耦合时，开关区域发射信号光，同时在控制光不耦合时反射信号光。

86. 发明授权

US4884858A Distributed coupler switch 失效
标题翻译：分布式耦合器开关
公开(公告)号：US4884858A
公开(公告)日：1989-12-05
申请号：US272828
申请日：1988-11-18
申请人： Takashi Ushikubo , Hideaki Okayama , Masato Kawahara , Issei Asabayashi
发明人： Takashi Ushikubo , Hideaki Okayama , Masato Kawahara , Issei Asabayashi
IPC分类号： G02B6/12 , G02F1/025 , G02F1/313
CPC分类号： G02F1/3133 , G02F2201/063
摘要： In an electro-optic distributed coupler switch having a parallel rib geometry, a coupling enhancement region formed of the same material as the upper cladding layers but of lower step height is located between the ribs. By increasing the electric field strength, the coupling enhancement region enables the coupling length L.sub.c to be reduced.
摘要翻译：在具有平行肋几何形状的电光分布耦合器开关中，由与上包层相同的材料形成但具有较低台阶高度的耦合增强区域位于肋之间。通过提高电场强度，耦合增强区域能够减小耦合长度Lc。

87. 发明申请

US20190250434A1 OPTICAL STRUCTURE AND METHOD OF FABRICATING AN OPTICAL STRUCTUR 审中-公开
公开(公告)号：US20190250434A1
公开(公告)日：2019-08-15
申请号：US16324748
申请日：2017-08-09
申请人： University of Southampton
发明人： Kapil DEBNATH , Graham REED , Shinichi SAITO
IPC分类号： G02F1/025
CPC分类号： G02F1/025 , G02F2001/0152 , G02F2201/063 , G02F2202/105
摘要： A method of fabricating an optical structure comprises providing a layer of single crystal crystalline silicon supported on an insulating surface of a silicon substrate; using etching to remove part of the silicon layer and define a side wall which is non-parallel to the insulating surface of the substrate; forming a layer of insulating material over the side wall; forming a further layer of silicon over at least the insulating material; and removing the silicon of the further layer to a level of the layer of silicon such that the layer of insulating material occupies a slot between a portion of silicon in the layer and a portion of silicon in the further layer, a thickness of the layer of insulating material defining a width of the slot.

88. 发明申请

US20190196231A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190196231A1
公开(公告)日：2019-06-27
申请号：US16182259
申请日：2018-11-06
申请人： RENESAS ELECTRONICS CORPORATION
发明人： Tohru KAWAI , Shinichi WATANUKI , Yasutaka NAKASHIBA
IPC分类号： G02F1/025
CPC分类号： G02F1/025 , G02F2201/063 , G02F2203/50
摘要： The performances of a semiconductor device are improved. The semiconductor device includes an insulation layer, an optical waveguide part formed over the insulation layer, and including a p type semiconductor region and an n type semiconductor region formed therein, and an interlayer insulation film formed over the insulation layer in such a manner as to cover the optical waveguide part. At the first portion of the optical waveguide part, in a cross sectional view perpendicular to the direction of extension of the optical waveguide part, the n type semiconductor region is arranged at the central part of the optical waveguide part, and the p type semiconductor region is arranged in such a manner as to surround the entire circumference of the n type semiconductor region.

89. 发明授权

US10073286B2 Substrate-type optical waveguide and substrate-type optical modulator 有权
公开(公告)号：US10073286B2
公开(公告)日：2018-09-11
申请号：US15448895
申请日：2017-03-03
申请人： FUJIKURA LTD.
发明人： Shinichi Sakamoto , Norihiro Ishikura
IPC分类号： G02B6/122 , G02F1/025 , G02F1/225 , G02F1/21
CPC分类号： G02F1/025 , G02F1/2255 , G02F2001/212 , G02F2201/063
摘要： The substrate-type optical waveguide includes a rib-slab type core. A depletion layer exists in a rib part and, in any cross section of the core, a width of a first slab part is set to be greater than a width of a second slab part.

90. 发明授权

US09927637B2 Optical waveguide element 有权
公开(公告)号：US09927637B2
公开(公告)日：2018-03-27
申请号：US15446452
申请日：2017-03-01
申请人： FUJIKURA LTD.
发明人： Kensuke Ogawa
IPC分类号： G02F1/025 , G02F1/225 , G02F1/21
CPC分类号： G02F1/025 , G02B6/00 , G02B6/12 , G02B6/122 , G02F1/2257 , G02F2001/212 , G02F2201/063
摘要： To reduce the optical loss, lower the driving voltage, produce a smaller product, and simplify the production process, an embodiment of the present invention includes a rib waveguide core (101) having a rib region (101r) and two slab regions (101s), where a depletion layer (113) is so formed as to extend from the rib region (101r) to the two slab regions (101s).

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