专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明授权

US07964278B2 III-V semiconductor core-heteroshell nanocrystals 有权
标题翻译： III-V半导体核 - 异质纳米晶体
公开(公告)号：US07964278B2
公开(公告)日：2011-06-21
申请号：US11922008
申请日：2006-06-15
申请人： Uri Banin , Assaf Aharoni
发明人： Uri Banin , Assaf Aharoni
IPC分类号： B32B15/02
CPC分类号： C30B29/60 , B82Y20/00 , B82Y30/00 , C09K11/02 , C09K11/70 , C09K11/883 , C30B7/005 , H01L33/24 , H01S5/3412 , Y10T428/2991
摘要： The present invention provides a core/multishell semiconductor nanocrystal comprising a core and multiple shells, which exhibits a type-I band offset and high photoluminescence quantum yield providing bright tunable emission covering the visible range from about 400 nm to NIR over 1600 nm.
摘要翻译：本发明提供了一种包含核和多个壳的核/多壳半导体纳米晶体，其表现出I型带偏移和高光致发光量子产率，从而提供了可见光范围从1600nm附近的约400nm到NIR的可见光范围。

82. 发明申请

US20110108799A1 NANOPARTICLES 审中-公开
标题翻译：纳米比亚
公开(公告)号：US20110108799A1
公开(公告)日：2011-05-12
申请号：US12959749
申请日：2010-12-03
申请人： Nigel Pickett , Steven Daniels , Paul O'Brien
发明人： Nigel Pickett , Steven Daniels , Paul O'Brien
IPC分类号： H01L29/66 , H01L21/20
CPC分类号： C01G9/08 , B82Y30/00 , C01B19/007 , C01P2002/84 , C01P2004/64 , C01P2004/84 , C09K11/02 , C09K11/025 , C09K11/565 , C09K11/883 , C30B7/00 , C30B7/005 , C30B29/605 , H01L31/0296 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996
摘要： Method for producing a nanoparticle comprised of core, first shell and second shell semiconductor materials. Effecting conversion of a core precursor composition comprising separate first and second precursor species to the core material and then depositing said first and second shells. The conversion is effected in the presence of a molecular cluster compound under conditions permitting seeding and growth of the nanoparticle core. Core/multishell nanoparticles in which at least two of the core, first shell and second shell materials incorporate ions from groups 12 and 15, 14 and 16, or 11, 13 and 16 of the periodic table. Core/multishell nanoparticles in which the second shell material incorporates at least two different group 12 ions and group 16 ions. Core/multishell nanoparticles in which at least one of the core, first and second semiconductor materials incorporates group 11, 13 and 16 ions and the other semiconductor material does not incorporate group 11, 13 and 16 ions.
摘要翻译：用于制造由芯，第一壳和第二壳半导体材料构成的纳米颗粒的方法。将包含单独的第一和第二前体物质的核心前体组合物转化为芯材料，然后沉积所述第一和第二壳体。转化在分子簇化合物存在下在允许纳米颗粒核心的接种和生长的条件下进行。核/多壳纳米颗粒，其中芯，第一壳和第二壳材料中的至少两个包含周期表的组12和15,14，16和11,13和16的离子。核/多壳纳米颗粒，其中第二壳材料掺入至少两种不同的组12离子和第16族离子。核/多壳纳米颗粒，其中芯，第一和第二半导体材料中的至少一个掺入基团11,13和16离子，而另一半导体材料不掺入基团11,13和16离子。

83. 发明授权

US07867556B2 Controlled preparation of nanoparticle materials 有权
标题翻译：纳米颗粒材料的控制制备
公开(公告)号：US07867556B2
公开(公告)日：2011-01-11
申请号：US11588880
申请日：2006-10-27
申请人： Nigel Pickett
发明人： Nigel Pickett
IPC分类号： C30B7/00 , B82B3/00
CPC分类号： C01B19/007 , B82Y10/00 , B82Y30/00 , C01B17/20 , C01B19/002 , C01P2002/72 , C01P2002/84 , C01P2004/64 , C01P2004/80 , C01P2004/84 , C30B7/00 , C30B7/005 , H01L29/127 , Y10T428/2982 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/2996
摘要： A method of producing nanoparticles comprising effecting conversion of a nanoparticle precursor composition to the material of the nanoparticles, the precursor composition comprising a first precursor species containing a first ion to be incorporated into the growing nanoparticles and a second precursor species containing a second ion to be incorporated into the growing nanoparticles, said conversion being effected in the presence of a molecular cluster compound under conditions permitting seeding and growth of the nanoparticles.
摘要翻译：一种制备纳米颗粒的方法，其包括使纳米颗粒前体组合物转化为纳米颗粒的材料，所述前体组合物包含含有待结合到生长纳米颗粒中的第一离子的第一前体物质和含有第二离子的第二前体物质掺入生长的纳米颗粒中，所述转化在允许纳米颗粒的接种和生长的条件下在分子簇化合物存在下进行。

84. 发明申请

US20100263586A1 LOW TEMPERATURE CONTINUOUS CIRCULATION REACTOR FOR THE AQUEOUS SYNTHESIS OF ZnO FILMS, NANOSTRUCTURES, AND BULK SINGLE CRYSTALS 有权
标题翻译： ZnO薄膜，纳米结构和块状单晶的水性合成的低温连续循环反应器
公开(公告)号：US20100263586A1
公开(公告)日：2010-10-21
申请号：US12761246
申请日：2010-04-15
申请人： Jacob J. Richardson , Frederick F. Lange , Maryann E. Lange
发明人： Jacob J. Richardson , Frederick F. Lange , Maryann E. Lange
IPC分类号： C30B19/08 , C30B19/06 , C30B19/10
CPC分类号： C30B7/005 , C30B7/08
摘要： A method for synthesizing ZnO, comprising continuously circulating a growth solution that is saturated with ZnO between a warmer deposition zone, which contains a substrate or seed, and a cooler dissolution zone, which is contains ZnO source material.
摘要翻译：一种合成ZnO的方法，包括在包含ZnO源材料的含有底物或种子的较热沉积区和较冷的溶解区之间连续循环ZnO饱和的生长溶液。

85. 发明申请

US20100255192A1 COLLOIDAL PHOTONIC CRYSTALS USING COLLOIDAL NANOPARTICLES AND METHOD FOR PREPARATION THEREOF 有权
标题翻译：使用胶体纳米颗粒的胶体光子晶体及其制备方法
公开(公告)号：US20100255192A1
公开(公告)日：2010-10-07
申请号：US12819869
申请日：2010-06-21
申请人： Young-jun HONG , Sang-hyuk Im
发明人： Young-jun HONG , Sang-hyuk Im
IPC分类号： B05D5/06 , F21V9/14
CPC分类号： G02B6/1225 , B82Y20/00 , C30B5/00 , C30B7/00 , C30B7/005 , C30B29/60 , Y10S977/753 , Y10S977/778 , Y10S977/784 , Y10S977/785 , Y10S977/811
摘要： The present invention relates to colloidal photonic crystals using colloidal nanoparticles and a method for the preparation thereof, wherein by adding a viscoelastic material into a solution containing the colloidal nanoparticles when preparing the colloidal photonic crystals, a uniform volume contraction occurs due to the elasticity of the viscoelastic material even when a nonuniform volume contraction occurs while drying a dispersion medium in the colloidal solution. Thus, it is possible to prepare 2 or 3 dimensional colloidal photonic crystals of large scale with no defects in less time.
摘要翻译：本发明涉及使用胶体纳米粒子的胶体光子晶体及其制备方法，其中通过在制备胶体光子晶体时将粘弹性材料加入含有胶态纳米粒子的溶液中，由于即使在干燥胶体溶液中的分散介质时也发生不均匀的体积收缩的粘弹性材料。因此，可以在更少的时间内制备大尺寸的2或3维胶体光子晶体，没有缺陷。

86. 发明申请

US20100105166A1 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICES HAVING GALLIUM NITRIDE EPILAYERS ON DIAMOND SUBSTRATES 有权
标题翻译：在金刚石基板上制造氮化硅薄膜的半导体器件的方法
公开(公告)号：US20100105166A1
公开(公告)日：2010-04-29
申请号：US12569486
申请日：2009-09-29
申请人： Daniel Francis , Felix Ejeckam , John Wasserbauer , Dubravko Babic
发明人： Daniel Francis , Felix Ejeckam , John Wasserbauer , Dubravko Babic
IPC分类号： H01L21/04
CPC分类号： H01L21/0405 , C30B7/005 , H01L21/02381 , H01L21/02447 , H01L21/02458 , H01L21/02488 , H01L21/02527 , H01L23/3732 , H01L2924/0002 , H01L2924/00
摘要： Methods for integrating wide-gap semiconductors with synthetic diamond substrates are disclosed. Diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited or formed on a layered structure including at least one layer of gallium nitride, aluminum nitride, silicon carbide, or zinc oxide. The resulting structure is a low stress process compatible with wide-gap semiconductor films, and may be processed into optical or high-power electronic devices. The diamond substrates serve as heat sinks or mechanical substrates.
摘要翻译：公开了将宽间隙半导体与合成金刚石基底集成的方法。通过将沉积合成金刚石沉积到沉积或形成在包括至少一层氮化镓，氮化铝，碳化硅或氧化锌的分层结构的成核层上而形成金刚石基底。所得到的结构是与宽间隙半导体膜兼容的低应力工艺，并且可以被加工成光学或大功率电子器件。金刚石衬底用作散热器或机械衬底。

87. 发明授权

US07621997B2 Methods of preparing a multi-shell nanocrystal structure, multi-shell nanocrystal structures and fabricated device including the same 失效
标题翻译：制备多壳纳米晶体结构的方法，多壳纳米晶体结构及其制造装置
公开(公告)号：US07621997B2
公开(公告)日：2009-11-24
申请号：US11446275
申请日：2006-06-05
申请人： Shin Ae Jun , Eun Joo Jang
发明人： Shin Ae Jun , Eun Joo Jang
IPC分类号： C30B29/62
CPC分类号： B82Y30/00 , C30B7/00 , C30B7/005 , C30B29/60 , Y10S977/712 , Y10S977/714 , Y10T428/2984
摘要： Methods of preparing a multi-shell nanocrystal structure, multi-shell nanocrystal structures thus obtained, and a fabricated device including the same are provided. A multi-shell nanocrystal structure may be formed by preparing a core nanocrystal and reacting the core nanocrystal with two or more precursors having different reaction rates to sequentially form two or more layers of shell nanocrystals having different compositions on a surface of the core nanocrystal.
摘要翻译：提供制备多壳纳米晶体结构的方法，由此获得的多壳纳米晶体结构以及包括其的制造装置。可以通过制备核心纳米晶体并使芯纳米晶体与具有不同反应速率的两种或更多种前体反应以在核心纳米晶体的表面上依次形成具有不同组成的两层或更多层的壳纳米晶体来形成多壳纳米晶体结构。

88. 发明申请

US20090200541A1 MAKING A STRUCTURE 有权
标题翻译：制作结构
公开(公告)号：US20090200541A1
公开(公告)日：2009-08-13
申请号：US12426955
申请日：2009-04-20
申请人： Gregory S. Herman , Peter Mardilovich , Chinmay Betrabet , Chih-Chung Chang , Yu-jen Chang , Doo-hyoung Lee , Mark W. Hoskins
发明人： Gregory S. Herman , Peter Mardilovich , Chinmay Betrabet , Chih-Chung Chang , Yu-jen Chang , Doo-hyoung Lee , Mark W. Hoskins
IPC分类号： H01L29/66
CPC分类号： H01L51/0022 , B41J11/002 , C23C18/04 , C23C18/06 , C23C18/14 , C30B7/005 , H01L21/67011 , Y10S977/938
摘要： A structure includes a surface and a non-equilibrium two-dimensional semiconductor micro structure on the surface.
摘要翻译：结构包括表面和表面上的非平衡二维半导体微结构。

89. 发明授权

US07534295B2 III nitride single crystal manufacturing method 有权
标题翻译： III族氮化物单晶制造方法
公开(公告)号：US07534295B2
公开(公告)日：2009-05-19
申请号：US10569813
申请日：2005-07-13
申请人： Seiji Nakahata
发明人： Seiji Nakahata
IPC分类号： C30B7/00 , H01L21/36
CPC分类号： C30B19/04 , C30B7/00 , C30B7/005 , C30B9/06 , C30B13/02 , C30B29/403
摘要： A III nitride single-crystal manufacturing method in which a liquid layer (3) of 200 μm or less thickness is formed in between a substrate (1) and a III nitride source-material baseplate (2), and III nitride single crystal (4) is grown onto the face (1s) on the liquid-layer side of the substrate (1). Herein, the substrate (1) in at least a superficial layer (1a) on the liquid-layer side may be formed of a III nitride single crystal, while the III nitride source-material baseplate (2) can be formed of a III nitride polycrystal. Further, the substrate (1) in at least a superficial layer (1a) on the liquid-layer side, and the III nitride source-material baseplate (2) can be formed of a III nitride single crystal, while the face (1s) on the liquid-layer side of the substrate (1) can be made a III-atom surface, and the face (2s) on the liquid-layer side of the III nitride source-material baseplate (2) can be made a nitrogen-atom surface.
摘要翻译：在基板（1）和III族氮化物源材料基板（2）之间形成厚度为200μm以下的液体层（3）和III族氮化物单晶（4）的III族氮化物单晶体制造方法）生长在基板（1）的液体层侧的面（1s）上。这里，液面侧的至少表面层（1a）中的基板（1）可以由III族氮化物单晶形成，而III族氮化物源材料基板（2）可以由III族氮化物多晶体此外，液面层至少表层（1a）中的基板（1）和III族氮化物源材料基板（2）可以由III族氮化物单晶形成，而面（1s）可以在基板（1）的液面侧形成III原子表面，并且可以将III族氮化物源材料基板（2）的液体层侧的面（2s）原子表面。

90. 发明申请

US20080210662A1 THICK POROUS ANODIC ALUMINA FILMS AND NANOWIRE ARRAYS GROWN ON A SOLID SUBSTRATE 有权
标题翻译：厚多孔阳极氧化铝膜和固体基底上的纳米阵列
公开(公告)号：US20080210662A1
公开(公告)日：2008-09-04
申请号：US11832309
申请日：2007-08-01
申请人： Oded Rabin , Paul R. Herz , Mildred S. Dresselhaus , Akintunde I. Akinwande , Yu-Ming Lin
发明人： Oded Rabin , Paul R. Herz , Mildred S. Dresselhaus , Akintunde I. Akinwande , Yu-Ming Lin
IPC分类号： H01B13/00 , B29C65/72
CPC分类号： C23C14/024 , B82Y30/00 , C23C14/16 , C23C14/5873 , C30B7/00 , C30B7/005 , C30B29/605 , H01L35/32 , H01L35/34 , Y10T156/10 , Y10T428/12486 , Y10T428/1259 , Y10T428/24273 , Y10T428/24322 , Y10T428/24917
摘要： The presently disclosed invention provides for the fabrication of porous anodic alumina (PAA) films on a wide variety of substrates. The substrate comprises a wafer layer and may further include an adhesion layer deposited on the wafer layer. An anodic alumina template is formed on the substrate. When a rigid substrate such as Si is used, the resulting anodic alumina film is more tractable, easily grown on extensive areas in a uniform manner, and manipulated without danger of cracking. The substrate can be manipulated to obtain free-standing alumina templates of high optical quality and substantially flat surfaces. PAA films can also be grown this way on patterned and non-planar surfaces. Furthermore, under certain conditions the resulting PAA is missing the barrier layer (partially or completely) and the bottom of the pores can be readily accessed electrically. The resultant film can be used as a template for forming an array of nanowires wherein the nanowires are deposited electrochemically into the pores of the template. By patterning the electrically conducting adhesion layer, pores in different areas of the template can be addressed independently, and can be filled electrochemically by different materials. Single-stage and multi-stage nanowire-based thermoelectric devices, consisting of both n-type and p-type nanowires, can be assembled on a silicon substrate by this method.
摘要翻译：目前公开的发明提供了在各种基底上制造多孔阳极氧化铝（PAA）膜。衬底包括晶片层，并且还可以包括沉积在晶片层上的粘附层。在基板上形成阳极氧化铝模板。当使用诸如Si的刚性基材时，所得的阳极氧化铝膜更易于处理，容易在均匀的方式在广泛的区域生长，并且操作而没有开裂的危险。可以操作基底以获得高光学质量和基本平坦表面的独立氧化铝模板。 PAA膜也可以在图案和非平面表面上生长。此外，在某些条件下，所得PAA缺少阻挡层（部分或完全），并且孔的底部可以容易地电接触。所得膜可以用作形成纳米线阵列的模板，其中纳米线电化学沉积到模板的孔中。通过图案化导电粘合层，可以独立地解决模板的不同区域中的孔，并且可以通过不同的材料电化学填充。通过这种方法，可以在硅衬底上组装由n型和p型纳米线组成的单级和多级纳米线型热电装置。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式