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81. 发明申请

US20160254140A1 METHOD FOR CLEANING WAFER 审中-公开
标题翻译：清洗方法
公开(公告)号：US20160254140A1
公开(公告)日：2016-09-01
申请号：US15026722
申请日：2014-09-08
申请人： CENTRAL GLASS COMPANY, LIMITED
发明人： Masanori SAITO , Takashi SAIO , Soichi KUMON , Shinobu ARATA
IPC分类号： H01L21/02 , B08B3/08 , C11D7/08 , C11D11/00 , C11D7/26
CPC分类号： H01L21/02068 , B08B3/08 , C07F9/3808 , C11D7/06 , C11D7/08 , C11D7/261 , C11D7/265 , C11D7/3209 , C11D7/3218 , C11D11/0047
摘要： A method for cleaning a wafer that has a pattern of recessed and projected portions formed on a surface thereof and contains at least one element selected from titanium, tungsten, aluminum, copper, tin, tantalum, and ruthenium on a surface of a recessed portion of the pattern. The method at least includes a pre-treating step of holding a cleaning liquid at least in the recessed portion of the pattern; a protective film forming step of holding a protective film forming chemical liquid, which is a chemical liquid containing a water-repellant protective film forming agent, at least in the recessed portion of the pattern after the pre-treating step; and a drying step of removing the liquids from the pattern by drying. The cleaning liquid is acidic if the protective film forming chemical liquid is basic, or is basic if the protective film forming chemical liquid is acidic.
摘要翻译：一种用于清洁晶片的方法，所述晶片具有形成在其表面上的凹入和突出部分的图案，并且包含选自钛，钨，铝，铜，锡，钽和钌中的至少一种元素，模式。该方法至少包括至少在图案的凹部中保持清洁液体的预处理步骤; 保护膜形成步骤，至少在预处理步骤的图案的凹部中之后，保持作为含有防水保护膜形成剂的化学液体的形成保护膜的药液; 以及通过干燥从图案中除去液体的干燥步骤。如果保护膜形成的化学液体是碱性的，则清洁液体是酸性的，或者如果形成保护膜的化学液体是酸性的，则是基本的。

82. 发明申请

US20160237385A1 NON-AMINE POST-CMP COMPOSITION AND METHOD OF USE 审中-公开
标题翻译：非胺后CMP组合物及其使用方法
公开(公告)号：US20160237385A1
公开(公告)日：2016-08-18
申请号：US15137552
申请日：2016-04-25
申请人： ADVANCED TECHNOLOGY MATERIALS, INC.
发明人： Jeffrey A. BARNES , Jun LIU , Peng ZHANG
IPC分类号： C11D11/00 , C11D3/20 , B08B7/04 , H01L21/02 , B08B3/08 , B08B3/10 , C11D3/04 , C11D3/33
CPC分类号： C11D11/0047 , B08B3/08 , B08B3/10 , B08B7/04 , C11D3/044 , C11D3/2041 , C11D3/2044 , C11D3/2065 , C11D3/2075 , C11D3/2086 , C11D3/2096 , C11D3/33 , C11D3/43 , C11D7/06 , C11D7/08 , C11D7/265 , C11D7/267 , C11D7/3245 , C11D7/50 , C11D7/5004 , C11D7/5022 , H01L21/0206 , H01L21/02065 , H01L21/02068 , H01L21/02074
摘要： A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of amine and ammonium-containing compounds, e.g., quaternary ammonium bases. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
摘要翻译：一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。清洁组合物基本上不含胺和铵的化合物，例如季铵碱。该组合物可以在不影响低k电介质材料或铜互连材料的情况下从微电子器件的表面高效地清洁后CMP残留物和污染物质。

83. 发明申请

US20160230130A1 PHOTORESIST STRIPPING USING INTELLIGENT LIQUIDS 审中-公开
标题翻译：使用智能液体的光电传感器
公开(公告)号：US20160230130A1
公开(公告)日：2016-08-11
申请号：US15028452
申请日：2014-10-13
申请人： BUBBLES & BEYOND GMBH
发明人： Dirk Schumann
IPC分类号： C11D11/00 , C11D1/14 , C11D1/83 , H01L21/321 , C11D3/20 , H01L21/027 , H01L21/3105 , C11D17/00 , C11D1/75
CPC分类号： C11D11/0047 , C11D1/146 , C11D1/75 , C11D1/83 , C11D3/2041 , C11D3/2044 , C11D3/2072 , C11D3/2075 , C11D3/2093 , C11D3/32 , C11D17/0013 , C11D17/0017 , H01L21/0272 , H01L21/31058 , H01L21/321
摘要： The invention present describes novel cleaning agents based on a multiphase system, the use thereof for removing photoresist coatings from surfaces, and a method for removing photoresist coatings from surfaces. The multiphase system according to the invention is used in particular for removing coatings, photoresist coatings, polymer layers, dirt layers, insulation layers, and metal layers from surfaces.
摘要翻译：本发明描述了基于多相系统的新型清洁剂，其用于从表面除去光致抗蚀剂涂层的用途以及从表面除去光致抗蚀剂涂层的方法。根据本发明的多相系统特别用于从表面去除涂层，光致抗蚀剂涂层，聚合物层，污垢层，绝缘层和金属层。

84. 发明申请

US20160230016A1 Liquid Chemical for Forming Water Repellent Protecting Film, and Process for Cleaning Wafers Using the Same 审中-公开
标题翻译：用于防水防水膜的液体化学品，以及使用其的清洗晶片的方法
公开(公告)号：US20160230016A1
公开(公告)日：2016-08-11
申请号：US15130250
申请日：2016-04-15
申请人： Central Glass Company, Limited
发明人： Soichi KUMON , Takashi SAIO , Masanori SAITO , Shinobu ARATA
IPC分类号： C09D5/00 , H01L21/02
CPC分类号： C09D5/00 , C11D1/004 , C11D1/006 , C11D1/04 , C11D1/342 , C11D1/40 , C11D1/58 , C11D3/2079 , C11D3/28 , C11D3/3427 , C11D3/361 , C11D3/43 , C11D11/0047 , H01L21/02052 , H01L21/02068 , H01L21/02093 , H01L21/02118 , H01L21/02282 , H01L21/321
摘要： A liquid chemical for forming a water repellent protecting film on a wafer having at its surface an uneven pattern and containing at least one kind of element selected from the group consisting of titanium, tungsten, aluminum, copper, tin, tantalum and ruthenium at surfaces of recessed portions of the uneven pattern, the water repellent protecting film being formed at least on the surfaces of the recessed portions. The liquid chemical is characterized by including: a water repellent protecting film forming agent; and water, and characterized in that the water repellent protecting film forming agent is at least one selected from compounds represented by the following general formula [1] and salt compounds thereof and that the concentration of the water relative to the total quantity of a solvent contained in the liquid chemical is not smaller than 50 mass %.
摘要翻译：一种用于在晶片上形成防水保护膜的液体化学品，其表面具有不均匀图案，并且含有选自钛，钨，铝，铜，锡，钽和钌中的至少一种元素。凹凸图案的凹部，防水保护膜至少形成在凹部的表面上。液体化学品的特征在于包括：防水保护膜形成剂; 和水，其特征在于防水保护膜形成剂为选自下列通式[1]表示的化合物及其盐化合物中的至少一种，并且水相对于所含溶剂总量的浓度在液体化学品中不低于50质量％。

85. 发明申请

US20160215240A1 SOLUTIONS AND PROCESSES FOR REMOVING SUBSTANCES FROM SUBSTRATES 有权
标题翻译：从基材中去除物质的方法和工艺
公开(公告)号：US20160215240A1
公开(公告)日：2016-07-28
申请号：US14602414
申请日：2015-01-22
申请人： Dynaloy, LLC
发明人： Travis Acra , Richard Dalton Peters , Kimberly Dona Pollard , Donald James Pfettscher
IPC分类号： C11D7/32 , H01L21/02 , H01L23/00 , C11D7/26 , H01L21/027
CPC分类号： C11D7/3209 , C11D3/2068 , C11D7/261 , C11D7/263 , C11D7/3218 , C11D7/3263 , C11D11/0047 , G03F7/425 , H01L21/02068 , H01L21/0275 , H01L21/31133 , H01L24/11 , H01L24/13 , H01L24/14 , H01L2224/11002 , H01L2224/1132 , H01L2224/1146 , H01L2224/1147 , H01L2224/11849 , H01L2224/131 , H01L2224/14181 , H01L2224/16145 , H01L2224/16227 , H01L2924/00012 , H01L2924/014 , H01L2924/00014
摘要： The disclosure is directed solutions and processes to remove substances from substrates. Optionally, the substances can include photoresist on semiconductor wafers. The solution may include a quaternary ammonium hydroxide, a first amine, a second amine, and a third amine with the total amount of amine being no greater than about 95% by weight of a total weight of the solution. Additionally, a solution may include at least one amine, a quaternary ammonium hydroxide, and water and be free of a polar solvent other than water with the solution having a dynamic viscosity that is no greater than about 60 centipoise.
摘要翻译：本公开是从基底去除物质的定向解决方案和方法。任选地，物质可以包括在半导体晶片上的光致抗蚀剂。溶液可包括氢氧化季铵，第一胺，第二胺和第三胺，胺的总量不大于溶液总重量的约95重量％。此外，溶液可以包括至少一种胺，季铵氢氧化物和水，并且不含水以外的极性溶剂，所述溶液的动态粘度不大于约60厘泊。

86. 发明授权

US09394509B2 Cleaning solution composition and method of cleaning semiconductor device using the same 有权
标题翻译：清洗液组合物及使用其的半导体装置的清洗方法
公开(公告)号：US09394509B2
公开(公告)日：2016-07-19
申请号：US14542973
申请日：2014-11-17
申请人： Samsung Electronics Co., Ltd.
发明人： Sang-Won Bae , Yong-Sun Ko , Seok-Hoon Kim , In-Gi Kim , Jung-Min Oh , Kun-Tack Lee , Hyo-San Lee , Ji-Hoon Jeong , Yong-Jhin Cho
IPC分类号： H01L21/20 , C11D11/00 , H01L21/02 , C11D7/08 , C11D7/50 , C11D7/10
CPC分类号： C11D11/0047 , C11D7/08 , C11D7/10 , C11D7/5022 , H01L21/02063 , H01L21/02068 , H01L21/02071
摘要： A cleaning solution composition includes an organic solvent in which a metal fluoride does not dissolve, at least one fluoride compound that generates bifluoride (HF2−), and deionized water, wherein the deionized water may be included in a concentration of 1.5 wt % or lower based on the total weight of the cleaning solution composition.
摘要翻译：清洗液组合物包括金属氟化物不溶解的有机溶剂，至少一种产生氟化氢的氟化物（HF2-）和去离子水，其中可以以1.5重量％以下的浓度包含去离子水基于清洁溶液组合物的总重量。

87. 发明申请

US20160186105A1 Stripping Compositions Having High WN/W Etching Selectivity 审中-公开
标题翻译：具有高WN / W蚀刻选择性的剥离组合物
公开(公告)号：US20160186105A1
公开(公告)日：2016-06-30
申请号：US14976737
申请日：2015-12-21
申请人： Air Products and Chemicals, Inc.
发明人： Wen Dar Liu , Yi-Chia Lee , Tianniu Chen , William Jack Casteel, JR. , Seiji Inaoka , Gene Everad Parris
IPC分类号： C11D11/00 , C11D7/10 , C11D7/26 , C11D7/08 , C11D7/32
CPC分类号： C11D11/0047 , C11D3/0073 , C11D3/3947 , C11D3/3956 , C11D7/10 , C11D7/265 , C11D7/3209 , C11D7/3245 , G03F7/423 , G03F7/425 , G03F7/426 , H01L21/02063 , H01L21/31144 , H01L21/32134
摘要： A composition for cleaning integrated circuit substrates, the composition comprising: water; an oxidizer comprising an ammonium salt of an oxidizing species; a corrosion inhibitor comprising a primary alkylamine having the general formula: R′NH2, wherein R′ is an alkyl group containing up to about 150 carbon atoms and will more often be an aliphatic alkyl group containing from about 4 to about 30 carbon atoms; optionally, a water-miscible organic solvent; optionally, an organic acid; optionally, a buffer speicies; optionally, a fluoride ion source; and optionally, a metal chelating agent.
摘要翻译：一种用于清洁集成电路基板的组合物，所述组合物包括：水; 包含氧化物质的铵盐的氧化剂; 包含具有以下通式的伯烷基胺的腐蚀抑制剂：R'NH 2，其中R'是含有至多约150个碳原子的烷基，更经常是含有约4至约30个碳原子的脂族烷基; 任选地，与水混溶的有机溶剂; 任选的有机酸; 可选地，缓冲区; 任选地，氟离子源; 和任选的金属螯合剂。

88. 发明申请

US20160181087A1 Particle removal with minimal etching of silicon-germanium 审中-公开
标题翻译：通过最小蚀刻硅 - 锗去除颗粒
公开(公告)号：US20160181087A1
公开(公告)日：2016-06-23
申请号：US14576554
申请日：2014-12-19
申请人： Intermolecular Inc. , IBM-International Business Machines Corporation
发明人： John Foster , Steven Bentley , Sean Lin , Dave Rath , Muthumanickam Sankarapandian , Ruilong Xie
IPC分类号： H01L21/02 , B08B3/10 , B08B3/08
CPC分类号： H01L21/02068 , C11D11/0047 , H01L21/02052
摘要： Particle-clean formulations and methods for semiconductor substrates use aqueous solutions of tetraethylammonium hydroxide (“TEAH,” C8H21NO) with or without hydrogen peroxide (H2O2). The solution pH ranges from 8-12.5. At process temperatures between 20-70 C, the TEAH solutions have been observed to remove particles from silicon-germanium (SiGe) with 20-99% Ge content in 15-300 seconds with very little etching (SiGe etch rates
摘要翻译：用于半导体衬底的颗粒清洁配方和方法使用具有或不具有过氧化氢（H 2 O 2）的四乙基氢氧化铵（“TEAH”，C 8 H 21 NO）的水溶液。溶液pH范围为8-12.5。在20-70℃的工艺温度下，已经观察到TEAH溶液在15-300秒内以非常少的蚀刻（SiGe蚀刻速率<1nm / min）从15-00秒钟内以20-99％Ge含量的硅 - 锗（SiGe）去除颗粒）。

89. 发明授权

US09365802B2 Cleaning liquid for semiconductor device substrates and method of cleaning substrate for semiconductor devices 有权
标题翻译：半导体器件用基板用清洗液及半导体装置用基板的清洗方法
公开(公告)号：US09365802B2
公开(公告)日：2016-06-14
申请号：US13780544
申请日：2013-02-28
申请人： MITSUBISHI CHEMICAL CORPORATION
发明人： Ken Harada , Atsushi Ito , Toshiyuki Suzuki
IPC分类号： C11D1/37 , C11D1/04 , C11D1/12 , C11D3/20 , C11D3/37 , C11D11/00 , H01L21/02
CPC分类号： C11D1/37 , C11D1/04 , C11D1/12 , C11D3/2086 , C11D3/3765 , C11D11/0047 , H01L21/02074
摘要： The invention relates to a cleaning liquid for semiconductor device substrates comprising the following components (A) to (D) and a method of cleaning semiconductor device substrates: (A) at least either one of a polycarboxylic acid and a hydroxycarboxylic acid; (B) a sulfonic acid type anionic surfactant; (C) a carboxylic acid type anionic surfactant; and (D) water.
摘要翻译：本发明涉及一种包含以下组分（A）至（D）的半导体器件衬底的清洗液和一种清洁半导体器件衬底的方法：（A）多元羧酸和羟基羧酸中的至少一种; （B）磺酸型阴离子表面活性剂; （C）羧酸型阴离子表面活性剂; 和（D）水。

90. 发明授权

US09359231B2 Electrolytic bath for manufacturing acid water and using method of the water 有权
标题翻译：用于制造酸水的电解槽和使用水的方法
公开(公告)号：US09359231B2
公开(公告)日：2016-06-07
申请号：US14566879
申请日：2014-12-11
申请人： MAG Technology Co., Ltd. , Byounglyeol Kim
发明人： Jae Yong Lee
IPC分类号： C02F1/461 , C25B9/08 , C25B1/10 , C25B11/03 , C25B11/04
CPC分类号： C02F1/4618 , C02F1/46104 , C11D7/08 , C11D11/0047 , C25B1/10 , C25B9/08 , C25B11/035 , C25B11/04 , Y02E60/366
摘要： An electrolytic bath for manufacturing acid water capable of securing sufficient conductivity even in pure water or deionized water without separately using a catalyst or an ion exchange resin, electrolyzing the pure water or deionized water as well as tap water, and particularly minimizing a reaction between ions and a gas through a deaeration effect and an electrolytic effect in one electrolytic process, increasing conductivity of acid water, and enhancing reduction potential and maintenance time of dissolving power, to obtain acid water (hydrogen water) as stable acid reduced water.
摘要翻译：一种用于制造酸水的电解槽，即使在纯水或去离子水中也能确保足够的导电性，而不需要单独使用催化剂或离子交换树脂，电解纯水或去离子水以及自来水，特别是使离子之间的反应最小化在一个电解过程中通过脱气效果和电解效应的气体，增加酸性水的导电性，并且提高溶解力的还原电位和维持时间，获得作为稳定的酸还原水的酸性水（氢水）。

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