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81. 发明授权

US09343620B2 Method for fabricating a light emitting diode (LED) die having protective substrate 有权
标题翻译：制造具有保护基板的发光二极管（LED）裸片的方法
公开(公告)号：US09343620B2
公开(公告)日：2016-05-17
申请号：US14175033
申请日：2014-02-07
申请人： SemiLEDS Optoelectronics Co., Ltd.
发明人： Jiunn-Yi Chu , Chen-Fu Chu , Chao-Chen Cheng
IPC分类号： H01L21/00 , H01L33/06 , H01L33/20 , H01L33/38 , H01L33/00 , H01L33/40 , H01L33/64 , H01L33/10 , H01L33/32
CPC分类号： H01L33/06 , H01L33/0075 , H01L33/0079 , H01L33/0095 , H01L33/10 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/405 , H01L33/647 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014
摘要： A method for fabricating a light emitting diode die includes the steps of providing a carrier substrate and forming an epitaxial structure on the carrier substrate including a first type semiconductor layer, a multiple quantum well (MQW) layer on the first type semiconductor layer configured to emit light, and a second type semiconductor layer on the multiple quantum well (MQW) layer. The method also includes the steps of forming a plurality of trenches through the epitaxial structure, forming a reflector layer on the second type semiconductor layer, forming a seed layer on the reflector layer and in the trenches, and forming a substrate on the seed layer having an area configured to protect the epitaxial structure.
摘要翻译：一种用于制造发光二极管管芯的方法包括以下步骤：在载体衬底上提供载体衬底并形成外延结构，该衬底包括第一类型半导体层，第一类型半导体层上的多量子阱（MQW）层，其被配置为发射光和在多量子阱（MQW）层上的第二类型半导体层。该方法还包括以下步骤：通过外延结构形成多个沟槽，在第二类型半导体层上形成反射层，在反射层上和沟槽中形成晶种层，并在晶种层上形成衬底，被配置为保护外延结构的区域。

82. 发明授权

US09231152B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US09231152B2
公开(公告)日：2016-01-05
申请号：US13845511
申请日：2013-03-18
申请人： SemiLEDS Optoelectronics Co., Ltd.
发明人： Trung-Tri Doan , Chao-Chen Cheng , Yi-Feng Shih
IPC分类号： H01L33/04 , H01L25/075 , H01L33/62
CPC分类号： H01L33/04 , H01L25/0753 , H01L33/385 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： The present invention provides a light emitting diode, which comprises a first LED die, a second LED die, and a dummy LED die, wherein the second LED die is disposed between the first LED die and the dummy LED die, and each die comprises a first semi-conductive layer, a second semi-conductive layer, and a multiple quantum well layer disposed between the first and the second semi-conductive layers. The first semi-conductive layer of the first LED die is coupled to the second semi-conductive layer of the second LED die, and the first semi-conductive layer of the second LED die is coupled to the first and second semi-conductive layers of the dummy LED die.
摘要翻译：本发明提供了一种发光二极管，其包括第一LED管芯，第二LED管芯和虚拟LED管芯，其中第二LED管芯设置在第一LED管芯和虚拟LED管芯之间，每个管芯包括第一半导电层，第二半导体层和设置在第一和第二半导电层之间的多量子阱层。第一LED管芯的第一半导体层耦合到第二LED管芯的第二半导体层，第二个LED管芯的第一半导电层耦合到第一和第二半导体层的第一和第二半导电层虚拟LED模具。

83. 发明申请

US20150280078A1 WHITE FLIP CHIP LIGHT EMITTING DIODE (FC LED) AND FABRICATION METHOD 审中-公开
标题翻译：白色片状发光二极管（FC LED）和制造方法
公开(公告)号：US20150280078A1
公开(公告)日：2015-10-01
申请号：US14230040
申请日：2014-03-31
申请人： SemiLEDS Optoelectronics Co., Ltd.
发明人： JUI-KANG YEN , YUNG-WEI CHEN , CHIH-HSUN CHEN
IPC分类号： H01L33/50 , H01L33/06 , H01L33/60 , H01L33/00
CPC分类号： H01L33/505 , H01L33/005 , H01L33/46 , H01L33/62 , H01L2933/0025 , H01L2933/0041
摘要： A white flip chip light emitting diode (FC LED) includes a flip chip (LED) die configured to emit electromagnetic radiation; reflective sidewalls on the (LED) die; and a wavelength conversion member having a uniform thickness and a surface area greater than or equal to a footprint of the flip chip (LED) die configured to change a wavelength of the electromagnetic radiation to produce white light. A method for fabricating the white flip chip light emitting diode (FC LED) includes the steps of: providing the flip chip (LED) die; forming reflective sidewalls on the flip chip (LED) die; and forming a wavelength conversion member on the flip chip (LED) die.
摘要翻译：白色倒装芯片发光二极管（FC LED）包括被配置为发射电磁辐射的倒装芯片（LED）裸片; （LED）模具上的反射侧壁; 以及具有均匀厚度和大于或等于倒装芯片（LED）管芯的覆盖区域的表面积的波长转换构件，其被配置为改变电磁辐射的波长以产生白光。一种制造白色倒装芯片发光二极管（FC LED）的方法包括以下步骤：提供倒装芯片（LED）裸片; 在倒装芯片（LED）裸片上形成反射侧壁; 以及在倒装芯片（LED）管芯上形成波长转换部件。

84. 发明申请

US20140151635A1 METHOD FOR FABRICATING A LIGHT EMITTING DIODE (LED) DIE HAVING PROTECTIVE SUBSTRATE 审中-公开
标题翻译：用于制造具有保护基板的发光二极管（LED）的方法
公开(公告)号：US20140151635A1
公开(公告)日：2014-06-05
申请号：US14175033
申请日：2014-02-07
申请人： SemiLEDS Optoelectronics Co., Ltd.
发明人： JIUNN-YI CHU , Chen-Fu Chu , Chao-Chen Cheng
IPC分类号： H01L33/06 , H01L33/10 , H01L33/32 , H01L33/00
CPC分类号： H01L33/06 , H01L33/0075 , H01L33/0079 , H01L33/0095 , H01L33/10 , H01L33/20 , H01L33/32 , H01L33/38 , H01L33/405 , H01L33/647 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2933/0016 , H01L2924/00014
摘要： A method for fabricating a light emitting diode die includes the steps of providing a carrier substrate and forming an epitaxial structure on the carrier substrate including a first type semiconductor layer, a multiple quantum well (MQW) layer on the first type semiconductor layer configured to emit light, and a second type semiconductor layer on the multiple quantum well (MQW) layer. The method also includes the steps of forming a plurality of trenches through the epitaxial structure, forming a reflector layer on the second type semiconductor layer, forming a seed layer on the reflector layer and in the trenches, and forming a substrate on the seed layer having an area configured to protect the epitaxial structure.
摘要翻译：一种用于制造发光二极管管芯的方法包括以下步骤：在载体衬底上提供载体衬底并形成外延结构，该衬底包括第一类型半导体层，第一类型半导体层上的多量子阱（MQW）层，其被配置为发射光和在多量子阱（MQW）层上的第二类型半导体层。该方法还包括以下步骤：通过外延结构形成多个沟槽，在第二类型半导体层上形成反射层，在反射层和沟槽中形成晶种层，并在晶种层上形成衬底，被配置为保护外延结构的区域。

85. 发明授权

US08703515B2 Method for guiding current in a light emitting diode (LED) device 有权
标题翻译：用于在发光二极管（LED）装置中引导电流的方法
公开(公告)号：US08703515B2
公开(公告)日：2014-04-22
申请号：US13975410
申请日：2013-08-26
申请人： SemiLEDS Optoelectronics Co., Ltd.
发明人： Wen-Huang Liu , Chen-Fu Chu , Jiunn-Yi Chu , Chao-Chen Cheng , Hao-Chun Cheng , Feng-Hsu Fan , Yuan-Hsiao Chang
IPC分类号： H01L29/06 , H01L29/22 , H01L29/26 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L31/12
CPC分类号： H01L33/14 , H01L27/15 , H01L33/38 , H01L33/385 , H01L33/40 , H01L33/44 , H01L2224/0603 , H01L2224/48091 , H01L2224/48465 , H01L2224/4903 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： Methods for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.
摘要翻译：提供了用于控制诸如LED的半导体器件中的电流流动的方法。对于一些实施例，可以提供电流引导结构，包括相邻的高和低接触区域。对于一些实施例，可以提供第二电流路径（除了n接触焊盘和衬底之间的电流路径之外）。对于一些实施例，可以提供电流引导结构和第二电流路径。

86. 发明授权

US08546818B2 Vertical LED with current-guiding structure 有权
标题翻译：垂直LED带导流结构
公开(公告)号：US08546818B2
公开(公告)日：2013-10-01
申请号：US13401446
申请日：2012-02-21
申请人： Wen-Huang Liu , Chen-Fu Chu , Jiunn-Yi Chu , Chao-Chen Cheng , Hao-Chun Cheng , Feng-Hsu Fan , Yuan-Hsiao Chang
发明人： Wen-Huang Liu , Chen-Fu Chu , Jiunn-Yi Chu , Chao-Chen Cheng , Hao-Chun Cheng , Feng-Hsu Fan , Yuan-Hsiao Chang
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/109 , H01L27/15 , H01L29/26 , H01L31/12 , H01L29/22 , H01L31/072 , H01L33/00
CPC分类号： H01L33/14 , H01L27/15 , H01L33/38 , H01L33/385 , H01L33/40 , H01L33/44 , H01L2224/0603 , H01L2224/48091 , H01L2224/48465 , H01L2224/4903 , H01L2224/73265 , H01L2924/00014 , H01L2924/00
摘要： Techniques for controlling current flow in semiconductor devices, such as LEDs are provided. For some embodiments, a current-guiding structure may be provided including adjacent high and low contact areas. For some embodiments, a second current path (in addition to a current path between an n-contact pad and a substrate) may be provided. For some embodiments, both a current-guiding structure and second current path may be provided.
摘要翻译：提供了用于控制诸如LED的半导体器件中的电流的技术。对于一些实施例，可以提供电流引导结构，包括相邻的高和低接触区域。对于一些实施例，可以提供第二电流路径（除了n接触焊盘和衬底之间的电流路径之外）。对于一些实施例，可以提供电流引导结构和第二电流路径。

87. 发明授权

US08507302B1 Wall structures for a semiconductor wafer 有权
标题翻译：半导体晶圆的壁结构
公开(公告)号：US08507302B1
公开(公告)日：2013-08-13
申请号：US11548624
申请日：2006-10-11
申请人： Chen-Fu Chu , Hao-Chun Cheng , Trung Tri Doan , Feng-Hsu Fan
发明人： Chen-Fu Chu , Hao-Chun Cheng , Trung Tri Doan , Feng-Hsu Fan
IPC分类号： H01L21/301
CPC分类号： H01L33/0079 , H01L33/0095 , H01L33/44 , H01L33/46 , H01S5/0201 , H01S5/0217 , H01S5/32341
摘要： Techniques for fabricating metal devices, such as vertical light-emitting diode (VLED) devices, power devices, laser diodes, and vertical cavity surface emitting laser devices, are provided. Devices produced accordingly may benefit from greater yields and enhanced performance over conventional metal devices, such as higher brightness of the light-emitting diode and increased thermal conductivity. Moreover, the invention discloses techniques in the fabrication arts that are applicable to GaN-based electronic devices in cases where there is a high heat dissipation rate of the metal devices that have an original non- (or low) thermally conductive and/or non- (or low) electrically conductive carrier substrate that has been removed.
摘要翻译：用于制造金属的装置，例如垂直发光二极管（VLED）器件，功率器件，激光二极管，及垂直腔表面发射激光器件的技术，提供了。相应地产生的器件可以受益于更高的收率和比常规的金属器件，如发光二极管的更高的亮度和增加的热导率增强的性能。此外，本发明公开了在具有原始非导热和/或非导电性的金属器件的高散热率的情况下适用于GaN基电子器件的制造技术中的技术。（或低）导电载体衬底。

88. 外观设计

USD685334S1 LED chip 有权
公开(公告)号：USD685334S1
公开(公告)日：2013-07-02
申请号：US29419098
申请日：2012-04-25
申请人： Chen-Fu Chu , Chao-Chen Cheng
设计人： Chen-Fu Chu , Chao-Chen Cheng

89. 发明授权

US08466479B2 Light emitting diodes (LEDs) with improved light extraction by roughening 有权
标题翻译：发光二极管（LED）通过粗糙化改进光提取
公开(公告)号：US08466479B2
公开(公告)日：2013-06-18
申请号：US12986946
申请日：2011-01-07
申请人： Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
发明人： Chen-Fu Chu , Hao-Chun Cheng , Feng-Hsu Fan , Wen-Huang Liu , Chao-Chen Cheng
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/20 , H01L33/0095 , H01L33/08 , H01L33/22
摘要： Systems and methods are disclosed for fabricating a semiconductor light-emitting diode (LED) device by forming an n-doped gallium nitride (n-GaN) layer on the LED device and roughening the surface of the n-GaN layer to extract light from an interior of the LED device.
摘要翻译：公开了用于通过在LED器件上形成n掺杂氮化镓（n-GaN）层并使n-GaN层的表面粗糙化从而提取出来的光的系统和方法来制造半导体发光二极管（LED）器件 LED装置的内部。

90. 发明授权

US08450758B2 Light emitting diode device 有权
标题翻译：发光二极管装置
公开(公告)号：US08450758B2
公开(公告)日：2013-05-28
申请号：US12939142
申请日：2010-11-03
申请人： Wen-Huang Liu , Li-Wei Shan , Chen-Fu Chu
发明人： Wen-Huang Liu , Li-Wei Shan , Chen-Fu Chu
IPC分类号： H01L33/38
CPC分类号： H01L33/60 , H01L33/22 , H01L33/38 , H01L33/405
摘要： A high-brightness vertical light emitting diode (LED) device having an outwardly located metal electrode. The LED device is formed by: forming the metal electrode on an edge of a surface of a LED epitaxy structure using a deposition method, such as physical vapor deposition (PVD), chemical vapor deposition (CVD), evaporation, electro-plating, or any combination thereof; and then performing a packaging process. The composition of the LED may be a nitride, a phosphide or an arsenide. The LED of the invention has the following advantages: improving current spreading performance, reducing light-absorption of the metal electrode, increasing brightness, increasing efficiency, and thereby improving energy efficiency. The metal electrode is located on the edge of the device and on the light emitting side. The metal electrode has two side walls, among which one side wall can receive more emission light from the device in comparison with the other one.
摘要翻译：具有向外定位的金属电极的高亮度垂直发光二极管（LED）装置。 LED器件通过以下方式形成：使用诸如物理气相沉积（PVD），化学气相沉积（CVD），蒸发，电镀或沉积法的沉积方法在LED外延结构的表面的边缘上形成金属电极其任何组合; 然后执行包装过程。 LED的组成可以是氮化物，磷化物或砷化物。本发明的LED具有以下优点：提高电流扩散性能，降低金属电极的光吸收，增加亮度，提高效率，从而提高能量效率。金属电极位于器件的边缘和发光侧。金属电极具有两个侧壁，其中一个侧壁可以从另一个侧壁接收来自该装置的更多的发射光。

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