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81. 发明申请

US20100178374A1 MOLD FOR PRODUCING SILICA CRUCIBLE 有权
标题翻译：生产二氧化硅可塑性的模具
公开(公告)号：US20100178374A1
公开(公告)日：2010-07-15
申请号：US12688452
申请日：2010-01-15
申请人： Takuma Yoshioka , Masaki Morikawa
发明人： Takuma Yoshioka , Masaki Morikawa
IPC分类号： B29C33/44
CPC分类号： C30B15/10 , C03B19/095 , C30B29/06 , C30B35/002
摘要： In a mold for use in the production of a silica crucible, a cylindrical rim member is engagedly supported through hooks to an inner side of an upper opening portion of the mold corresponding to an upper part of a silica crucible and an outer diameter of the rim member is smaller than an inner diameter of the mold but larger than an inner diameter of the silica crucible.
摘要翻译：在用于生产二氧化硅坩埚的模具中，圆柱形边缘构件通过钩接合地支撑到对应于二氧化硅坩埚的上部的模具的上部开口部分的内侧，并且边缘的外径构件小于模具的内径，但大于二氧化硅坩埚的内径。

82. 发明申请

US20100162944A1 METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL 有权
标题翻译：制造硅单晶的方法
公开(公告)号：US20100162944A1
公开(公告)日：2010-07-01
申请号：US12647659
申请日：2009-12-28
申请人： Yukinaga AZUMA , Masaki MORIKAWA
发明人： Yukinaga AZUMA , Masaki MORIKAWA
IPC分类号： C30B15/20
CPC分类号： C30B29/06 , C30B15/20
摘要： A method for manufacturing a silicon single crystal is provided including producing a silicon melt in a chamber by melting a silicon raw material loaded into a silica glass crucible under a reduced pressure and high temperature, removing gas bubbles from within the silicon melt by rapidly changing at least the pressure or temperature within the chamber, and pulling up the silicon single crystal from the silicon melt after the gas bubbles are removed. When the pressure is rapidly changed, the pressure within the chamber is rapidly changed at a predetermined change ratio. In addition, when the temperature is rapidly changed, the temperature within the chamber is rapidly changed at a predetermined change ratio. In this way, Ar gas attached to an inner surface of the crucible and h is the cause of the generation of SiO gas is removed.
摘要翻译：提供了一种制造硅单晶的方法，包括通过在减压和高温下熔化装载到石英玻璃坩埚中的硅原料在室内产生硅熔体，通过迅速地在最小化室内的压力或温度，并且在除去气泡之后从硅熔体中拉出硅单晶。当压力快速变化时，室内的压力以预定的变化率迅速变化。此外，当温度迅速变化时，室内的温度以预定的变化率快速变化。以这种方式，附着在坩埚的内表面上的Ar气体和h是除去产生SiO气体的原因。

83. 发明申请

US20100154703A1 SILICA GLASS CRUCIBLE 有权
标题翻译：二氧化硅玻璃可溶
公开(公告)号：US20100154703A1
公开(公告)日：2010-06-24
申请号：US12717390
申请日：2010-03-04
申请人： Yoshiyuki TSUJI , Toshio Tsujimoto
发明人： Yoshiyuki TSUJI , Toshio Tsujimoto
IPC分类号： C30B15/10 , B44C1/22
CPC分类号： C03C19/00 , B24C1/08 , C03C15/00 , C30B15/10 , Y10T117/1032 , Y10T117/108 , Y10T428/13 , Y10T428/131
摘要： To provide a silica glass crucible, wherein there are no problems of generating a sinking and buckling when said crucible is used for pulling up silicon single crystal at a high temperature.The silica glass crucible used for pulling up the silicon single crystal, wherein at least an outer surface of a wall part of the crucible is covered with fine grooves having a length of less than 200 μm, a width of less than 30 μm and a depth of from more than 3 μm to less than 30 μm. Preferably, said fine groves are formed by carrying out a sand-blast treatment and a hydrofluoric acid etching and exist on more than 10% of the outer surface of the crucible, and a sliding frictional coefficient of the outer surface of the crucible to a carbon at 1500 degree C. is more than 0.6.
摘要翻译：为了提供一种二氧化硅玻璃坩埚，其中当在高温下使用所述坩埚拉起硅单晶时，不存在产生下沉和翘曲的问题。用于提升硅单晶的二氧化硅玻璃坩埚，其中至少坩埚的壁部的外表面被细长的小于200μm，宽度小于30μm的细槽和深度大于3μm至小于30μm。优选地，通过进行喷砂处理和氢氟酸蚀刻而形成所述细小花纹，并且存在于坩埚的外表面的10％以上，坩埚的外表面的滑动摩擦系数为碳在1500摄氏度，大于0.6。

84. 发明授权

US07736613B2 Modification process of synthetic silica powder and its quartz glass product 有权
标题翻译：合成二氧化硅粉及其石英玻璃制品的改性工艺
公开(公告)号：US07736613B2
公开(公告)日：2010-06-15
申请号：US10303899
申请日：2002-11-26
申请人： Masanori Fukui , Takahiro Satoh
发明人： Masanori Fukui , Takahiro Satoh
IPC分类号： C01B33/12 , C01B33/18 , C03B19/10
CPC分类号： C30B35/002 , C03B19/1065 , C03B2201/04 , C03B2201/20 , C03C1/026 , C30B15/10 , Y10T117/10 , Y10T428/13 , Y10T428/131 , Y10T428/1317
摘要： A modified synthetic silica powder is produced by heating in vacuum an amorphous synthetic silica powder produced by a sol-gel process, and then cooling the heated silica powder in an atmosphere containing helium. When the modified synthetic silica powder is fused and vitrified in a process of crucible production, the resulting quartz glass crucible contains hardly any bubbles.
摘要翻译：通过在真空中加热通过溶胶 - 凝胶法制备的无定形合成二氧化硅粉末，然后在含有氦气的气氛中冷却加热的二氧化硅粉末来制备改性合成二氧化硅粉末。当改性合成二氧化硅粉末在坩埚生产过程中熔融和玻璃化时，所得石英玻璃坩埚几乎不含任何气泡。

85. 发明申请

US20100089308A1 SILICA GLASS CRUCIBLE AND METHOD FOR PULLING SINGLE-CRYSTAL SILICON 审中-公开
公开(公告)号：US20100089308A1
公开(公告)日：2010-04-15
申请号：US12251614
申请日：2008-10-15
申请人： Hiroshi KISHI , Masanori FUKUI
发明人： Hiroshi KISHI , Masanori FUKUI
IPC分类号： C30B15/10 , C30B15/00
CPC分类号： C30B29/06 , C03C3/06 , C30B15/10 , C30B35/002 , Y10T117/1024
摘要： A silica glass crucible used for pulling single-crystal silicon, which includes a cylindrical straight body part, a bottom part and a curved part located between the straight body part and the bottom part, wherein the curvature radius of the inner wall surface of the curved part is 100 to 240 mm. Variation of the wall thickness W of the curved part is preferably 0.1 to 1.4 mm/cm.

86. 发明申请

US20100071417A1 ARC DISCHARGE METHOD, ARC DISCHARGE APPARATUS, AND FUSED SILICA CRUCIBLE MANUFACTURING APPARATUS 有权
标题翻译：电弧放电方法，放电装置和熔融二氧化硅可制造装置
公开(公告)号：US20100071417A1
公开(公告)日：2010-03-25
申请号：US12563374
申请日：2009-09-21
申请人： Hiroshi KISHI , Masanori FUKUI , Masaki MORIKAWA
发明人： Hiroshi KISHI , Masanori FUKUI , Masaki MORIKAWA
IPC分类号： C03B19/09 , C03B19/06 , C03B5/027
CPC分类号： H05B7/085 , C03B19/095
摘要： An arc discharge method of the present invention includes the steps of: heating and melting a non-conductive object by arc discharge using a plurality of carbon electrodes in an output range of 300 to 12,000 kVA; and setting a ratio of the distance between a contact position at which the carbon electrodes come in contact with each other and a front end to the diameter of the carbon electrode during the start of the arc discharge to be in the range of 0.001 to 0.9.
摘要翻译：本发明的电弧放电方法包括以下步骤：使用多个碳电极在300〜12000kVA的输出范围内通过电弧放电来加热和熔融非导电物体; 并且在电弧放电开始期间设定碳电极彼此接触的接触位置与前端与碳电极的直径之间的距离的比率在0.001至0.9的范围内。

87. 发明申请

US20100005836A1 METHOD FOR PRODUCING QUARTZ GLASS CRUCIBLE 有权
标题翻译：生产石英玻璃可溶性的方法
公开(公告)号：US20100005836A1
公开(公告)日：2010-01-14
申请号：US12169838
申请日：2008-07-09
申请人： Hiroshi KISHI , Minoru KANDA
发明人： Hiroshi KISHI , Minoru KANDA
IPC分类号： C03B7/18
CPC分类号： C03B19/095 , C30B15/10 , C30B35/002
摘要： A method of producing a quartz glass crucible by arc melting a quartz powder molded product loaded on the inner side of a mold while performing vacuum suction, includes initiating the melting of quartz powder from the rim edge of a quartz powder molded product, subsequently lowering the arc electrode or raising the mold to heat and melt the sections on the downside of the rim edge. The method is preferably carried out such that the inner surface of the crucible is sealed within a time corresponding to 10% of the total arc time starting from the initiation of arc melting, and the seal thickness is 3 mm or less. The quartz glass crucible thus produced is useful for the pulling up of silicon single crystals and has a uniform glass layer with fewer internal bubbles.
摘要翻译：通过电弧熔融装载在模具内侧的石英粉末成形体同时进行真空抽吸来制造石英玻璃坩埚的方法包括从石英粉末成型品的边缘开始熔融石英粉末，随后将电弧电极或提升模具以加热和熔化边缘边缘的下侧的部分。该方法优选进行，使得坩埚的内表面在从电弧熔化开始起的总电弧时间的10％的时间内密封，并且密封厚度为3mm以下。由此制造的石英玻璃坩埚可用于提升硅单晶，并且具有均匀的具有较少内部气泡的玻璃层。

88. 发明申请

US20090272315A1 SILICA GLASS CRUCIBLE 有权
标题翻译：二氧化硅玻璃可溶
公开(公告)号：US20090272315A1
公开(公告)日：2009-11-05
申请号：US12430311
申请日：2009-04-27
申请人： Masanori FUKUI , Hiroshi KISHI
发明人： Masanori FUKUI , Hiroshi KISHI
IPC分类号： C30B15/10
CPC分类号： C30B15/10 , C30B35/002 , Y10T117/10 , Y10T117/1024 , Y10T117/1032 , Y10T117/1052
摘要： A silica glass crucible having a sidewall portion and a bottom portion is provided with a first synthetic silica glass layer constituting an inner layer at least in the sidewall portion, a second synthetic silica glass layer constituting an inner layer at least in a region including a center of the bottom portion, and a natural silica glass layer constituting an outer layer in the sidewall portion and the bottom portion. A melting rate of the second synthetic silica glass layer with respect to a silicon melt is higher than that of the first synthetic silica glass layer. An aluminum concentration of the second synthetic silica glass layer is higher than that of the first synthetic silica glass layer.
摘要翻译：具有侧壁部和底部的石英玻璃坩埚具有至少在侧壁部中构成内层的第一合成石英玻璃层，至少在包括中心的区域中构成内层的第二合成石英玻璃层和在侧壁部和底部构成外层的天然石英玻璃层。第二合成石英玻璃层相对于硅熔体的熔融率高于第一合成石英玻璃层的熔融速度。第二合成石英玻璃层的铝浓度高于第一合成石英玻璃层的铝浓度。

89. 发明申请

US20090173276A1 HIGH-PURITY VITREOUS SILICA CRUCIBLE USED FOR PULLING LARGE-DIAMETER SINGLE-CRYSTAL SILICON INGOT 有权
标题翻译：用于拉伸大直径单晶硅的高纯度二氧化硅可溶性
公开(公告)号：US20090173276A1
公开(公告)日：2009-07-09
申请号：US12325019
申请日：2008-11-28
申请人： Tadahiro SATOU
发明人： Tadahiro SATOU
IPC分类号： C30B15/10 , C03B19/09
CPC分类号： C03B19/095 , C30B15/10 , C30B29/06 , C30B35/002 , Y02P40/57 , Y10T117/10 , Y10T117/1032 , Y10T117/1052
摘要： A high-purity vitreous silica crucible which has high strength and is used for pulling a large-diameter single-crystal silicon ingot, includes a double laminated structure constituted by an outer layer composed of amorphous silica glass with a bubble content of 1 to 10% and a purity of 99.99% or higher and an inner layer composed of amorphous silica glass with a bubble content of 0.6% or less and a purity of 99.99% or higher, and in the portion between the upper opening end of the high-purity vitreous silica crucible and the ingot-pulling start line of a silicon melt surface in the step of pulling a single-crystal silicon ingot, a portion corresponding to 40 to 100 volume % from the upper opening end of the crucible is in a crystalline structure free from the crystallization promoter.
摘要翻译：具有高强度并用于拉伸大直径单晶硅锭的高纯度二氧化硅玻璃坩埚包括由气泡含量为1至10％的无定形二氧化硅玻璃构成的外层构成的双层压结构，纯度为99.99％以上，由无机石英玻璃构成的气泡含量为0.6％以下，纯度为99.99％以上的内层，高纯度玻璃体的上部开口端部分在拉制单晶硅锭的步骤中，硅熔体表面的引锭起始线与坩埚的上部开口端相当的部分为40〜100体积％，为晶体结构，结晶促进剂。

90. 发明申请

US20090084308A1 Easily crystallizable vitreous silica member, vitreous silica crucible and method for manufacturing single-crystal silicon 审中-公开
标题翻译：易结晶玻璃石英玻璃，玻璃石英坩埚及单晶硅制造方法
公开(公告)号：US20090084308A1
公开(公告)日：2009-04-02
申请号：US12143046
申请日：2008-06-20
申请人： Hiroshi KISHI , Minoru KANDA
发明人： Hiroshi KISHI , Minoru KANDA
IPC分类号： C30B15/00 , C01B33/12
CPC分类号： C03B19/095 , C30B15/10 , C30B29/06 , C30B35/002 , Y10T117/1032
摘要： A vitreous silica member of the present invention is characterized by being formed of vitreous silica exhibiting the easily crystallizable property in the absence of a crystallization accelerator. The vitreous silica having the easily crystallizable property is obtained preferably by heating and melting crystalline quartz at a temperature in the range of 1,710° C. or more to 1,780° C. or less for vitrification, and controlling the fictive temperature of the glass to be in the range of 1,100° C. or more to 1,400° C. or less. The invention also includes a vitreous silica crucible and a method of pulling single-crystal silicon using this vitreous silica crucible.
摘要翻译：本发明的玻璃状二氧化硅构件的特征在于由不存在结晶促进剂而具有容易结晶性的玻璃状二氧化硅形成。具有易结晶性的玻璃状二氧化硅优选通过将结晶石英在1710℃以上至1780℃以下的温度加热熔融而得到玻璃化，将玻璃的假想温度控制在在1100℃以上至1400℃以下的范围内。本发明还包括石英玻璃坩埚和使用该玻璃状石英坩埚拉取单晶硅的方法。

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