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81. 发明授权

US07553706B2 TFT fabrication process 有权
标题翻译： TFT制造工艺
公开(公告)号：US07553706B2
公开(公告)日：2009-06-30
申请号：US11276634
申请日：2006-03-08
申请人： Ping Liu , Yiliang Wu , Beng S Ong
发明人： Ping Liu , Yiliang Wu , Beng S Ong
IPC分类号： H01L21/00
CPC分类号： H01L29/513 , H01L51/0036 , H01L51/0097 , H01L51/052 , H01L51/0529 , H01L51/0537 , H01L51/0541 , H01L51/0545
摘要： A process for fabricating a thin film transistor including: (a) depositing a semiconductor layer; and (b) depositing a multilayer gate dielectric prior to or subsequent to the depositing the semiconductor layer, wherein the multilayer dielectric comprises: (i) a first layer comprising a first material selected from the group consisting of an optionally substituted silsesquioxane, an optionally substituted silsesquioxane-metal oxide hybrid composition, an optionally substituted siloxane-metal oxide hybrid composition, and a mixture thereof, and (ii) a second layer in contact with the first layer, wherein the second layer comprises a second material, wherein the first layer is closer to the semiconductor layer than the second layer.
摘要翻译：一种制造薄膜晶体管的方法，包括：（a）沉积半导体层; 以及（b）在沉积半导体层之前或之后沉积多层栅极电介质，其中所述多层电介质包括：（i）第一层，其包含选自任选取代的倍半硅氧烷，任选取代的第一材料倍半硅氧烷 - 金属氧化物杂化组合物，任选取代的硅氧烷 - 金属氧化物杂化组合物及其混合物，和（ii）与第一层接触的第二层，其中第二层包括第二材料，其中第一层为比第二层更靠近半导体层。

82. 发明授权

US07517476B2 Polydiazaacenes 有权
标题翻译：聚二氮杂
公开(公告)号：US07517476B2
公开(公告)日：2009-04-14
申请号：US11398902
申请日：2006-04-06
申请人： Yiliang Wu , Ping Liu , Beng S. Ong
发明人： Yiliang Wu , Ping Liu , Beng S. Ong
IPC分类号： H01B1/12
CPC分类号： C08G73/0694 , C08G61/122
摘要： A polymer represented by Formula or structure (I) wherein at least one of each R, R1, R2, R3, R4, R5, and R6 is independently hydrogen, alkyl, aryl, arylalkyl, alkoxy, halogen, cyano, or nitro; x, y, a and b represent the number of groups and rings, respectively; and n represents the number of repeating groups or moieties.
摘要翻译：由式或结构（I）表示的聚合物，其中R，R 1，R 2，R 3，R 4，R 5和R 6中的至少一个独立地为氢，烷基，芳基，芳基烷基，烷氧基，卤素，氰基或硝基; x，y，a和b分别表示组和环的数量; 并且n表示重复基团或部分的数目。

83. 发明授权

US07312469B2 Device with small molecular thiophene compound 有权
标题翻译：具有小分子噻吩化合物的装置
公开(公告)号：US07312469B2
公开(公告)日：2007-12-25
申请号：US10865445
申请日：2004-06-10
申请人： Beng S. Ong , Ping Liu , Maria Birau , Yiliang Wu
发明人： Beng S. Ong , Ping Liu , Maria Birau , Yiliang Wu
IPC分类号： H01L35/24
CPC分类号： H01L51/0036 , H01L51/0052 , H01L51/0068 , H01L51/0541 , H01L51/0545 , Y10T428/31504
摘要： An electronic device comprising a semiconductor layer in contact with a number of electrodes, wherein the semiconductor layer includes a small molecular thiophene compound consisting of a plurality of thiophene units, each thiophene unit being represented by structure (A) wherein each thiophene unit is bonded at either or both of the second ring position and the fifth ring position, wherein there is at least one thiophene unit where R1 is present at the third ring position or the fourth ring position, or at both the third ring position and the fourth ring position, wherein for any two adjacent thiophene units there is excluded the simultaneous presence of the same or different R1 at the 3-position of one thiophene unit and at the 3′-position of the other thiophene unit.
摘要翻译：一种电子器件，包括与多个电极接触的半导体层，其中所述半导体层包括由多个噻吩单元组成的小分子噻吩化合物，每个噻吩单元由结构（A）表示，其中每个噻吩单元以第二环位置和第五环位置中的任一个或两个，其中存在至少一个噻吩单元，其中R 1存在于第三环位置或第四环位置处，或者在第三环位置处环位置和第四环位置，其中对于任何两个相邻的噻吩单元，排除了在一个噻吩单元的3位和3'位上同时存在相同或不同的R 1' 其他噻吩单元的位置。

84. 发明授权

US07141644B2 Polthiophenes and devices thereof 有权
公开(公告)号：US07141644B2
公开(公告)日：2006-11-28
申请号：US10042357
申请日：2002-01-11
申请人： Beng S. Ong , Ping Liu , Lu Jiang , Yu Qi , Yiliang Wu
发明人： Beng S. Ong , Ping Liu , Lu Jiang , Yu Qi , Yiliang Wu
IPC分类号： C08G75/00
CPC分类号： C08G61/126 , H01L51/0036 , H01L51/0541 , H01L51/0545
摘要： Polythiophenes of the formula wherein R is a side chain; m is the number of substituents; A is a divalent linkage; x, y and z represent, respectively, the numbers of R substituted thienylene, unsubstituted thienylene, and divalent linkages A in the monomer segment with z being either 0 or 1; and n represents the number of the repeating monomer segments in the polymer chain or the degree of polymerization.

85. 发明授权

US07132500B2 Polythiophenes and devices thereof 有权
公开(公告)号：US07132500B2
公开(公告)日：2006-11-07
申请号：US11032710
申请日：2005-01-10
申请人： Beng S. Ong , Ping Liu , Yiliang Wu , Yu Qi
发明人： Beng S. Ong , Ping Liu , Yiliang Wu , Yu Qi
IPC分类号： C08G75/00
CPC分类号： C08G61/126 , H01L51/0036 , H01L51/0043 , H01L51/0541 , H01L51/0545
摘要： A polythiophene wherein the monomer segments thereof contain wherein A is a side chain; B is hydrogen or a side chain; and D is a divalent segment, and wherein the number of A-substituted thienylene units (I) in the monomer segments is from about 1 to about 10, the number of B-substituted thienylene units (II) is from 0 to about 5, and the number of divalent segments D is 0 or 1.

86. 发明授权

US06897284B2 Polythiophenes and devices thereof 有权
公开(公告)号：US06897284B2
公开(公告)日：2005-05-24
申请号：US10392592
申请日：2003-03-19
申请人： Ping Liu , Yiliang Wu , Lu Jiang , Beng S. Ong
发明人： Ping Liu , Yiliang Wu , Lu Jiang , Beng S. Ong
IPC分类号： C08G61/12 , H01B1/12 , H01L51/00 , H01L51/05 , H01L51/30 , C08G75/00
CPC分类号： C08G61/126 , C08G2261/1424 , C08G2261/3223 , H01B1/127 , H01L51/0036 , H01L51/0037 , H01L51/0541 , H01L51/0545
摘要： An electronic device containing a polythiophene prepared by a metal halide-mediated coupling polymerization in an appropriate solvent, and which polythiophene is comprised of at least one monomer unit selected from the group consisting of 2,5-thienylene (or 2,5-thiophenediyl) (I), 2,5-thienylene (or 2,5-thiophenediyl) (II), and a divalent linkage D wherein, for example, A is alkyl, alkoxy or derivatives thereof; B is a hydrogen atom, a small substituent like alkyl or alkoxy.

87. 发明授权

US08486304B2 Gelable composition 有权
标题翻译：凝胶成分
公开(公告)号：US08486304B2
公开(公告)日：2013-07-16
申请号：US11288480
申请日：2005-11-29
申请人： Yiliang Wu , Ping Liu , Beng S. Ong , Dasarao K. Murti
发明人： Yiliang Wu , Ping Liu , Beng S. Ong , Dasarao K. Murti
IPC分类号： H01B1/12 , C08G75/00
CPC分类号： H01L51/0545 , C08G61/02 , C08G61/126 , H01L51/0003 , H01L51/0007 , H01L51/0012 , H01L51/0036 , H01L51/0039 , H01L51/0043 , H01L51/052 , H01L51/0525 , H01L51/0541
摘要： A composition including a polymer and a liquid, wherein the polymer exhibits lower solubility in the liquid at room temperature but exhibits greater solubility in the liquid at an elevated temperature, wherein the composition gels when the elevated temperature is lowered to a first lower temperature without agitation, wherein the viscosity of the composition results from a process comprising (a) dissolving at the elevated temperature at least a portion of the polymer in the liquid; (b) lowering the temperature of the composition from the elevated temperature to the first lower temperature; and (c) agitating the composition to disrupt any gelling, wherein the agitating commences at any time prior to, simultaneous with, or subsequent to the lowering the elevated temperature of the composition to the first lower temperature, wherein the amount of the polymer dissolved in the liquid at the elevated temperature ranges from about 0.2% to about 5% based on the total weight of the polymer and the liquid.
摘要翻译：包含聚合物和液体的组合物，其中所述聚合物在室温下在液体中表现出较低的溶解度，但在升高的温度下在液体中表现出较高的溶解度，其中当升高的温度降低到第一较低温度而不搅拌时，组合物凝胶化其中组合物的粘度来自包括（a）在高温下将至少一部分聚合物溶解在液体中的方法; （b）将组合物的温度从升高的温度降低到第一较低温度; 和（c）搅拌组合物以破坏任何胶凝，其中搅拌在组合物的升高温度降低到第一较低温度之前，同时或之后的任何时间开始，其中聚合物溶解于基于聚合物和液体的总重量，在升高的温度下的液体的范围为约0.2％至约5％。

88. 发明授权

US08222073B2 Fabricating TFT having fluorocarbon-containing layer 有权
标题翻译：制造具有含氟烃层的TFT
公开(公告)号：US08222073B2
公开(公告)日：2012-07-17
申请号：US11837016
申请日：2007-08-10
申请人： Yiliang Wu , Ping Liu , Beng S Ong
发明人： Yiliang Wu , Ping Liu , Beng S Ong
IPC分类号： G02F1/13 , H01L29/94
CPC分类号： H01L51/0529 , B82Y10/00 , B82Y30/00 , H01L21/0212 , H01L21/022 , H01L21/3127 , H01L51/0036 , H01L51/0541 , H01L51/0545
摘要： A process for fabricating a thin film transistor comprising: (a) forming a gate dielectric; (b) forming a layer including a substance comprising a fluorocarbon structure; and (c) forming a semiconductor layer including a thiophene compound comprising one or more substituted thiophene units, one or more unsubstituted thiophene units, and optionally one or more divalent linkages, wherein the layer contacts the gate dielectric and is disposed between the semiconductor layer and the gate dielectric.
摘要翻译：一种制造薄膜晶体管的工艺，包括：（a）形成栅极电介质; （b）形成包含含氟碳结构的物质的层; 和（c）形成包含噻吩化合物的半导体层，所述噻吩化合物包含一个或多个取代的噻吩单元，一个或多个未取代的噻吩单元和任选的一个或多个二价键，其中所述层接触所述栅极电介质并且设置在所述半导体层和栅电介质。

89. 发明授权

US08089062B2 Wax encapsulated electronic devices 有权
标题翻译：蜡封装电子器件
公开(公告)号：US08089062B2
公开(公告)日：2012-01-03
申请号：US11087881
申请日：2005-03-23
申请人： Yiliang Wu , Beng S. Ong , Ping Liu
发明人： Yiliang Wu , Beng S. Ong , Ping Liu
IPC分类号： H01L35/24 , H01L51/00
CPC分类号： H01L51/10 , H01L51/0545 , H01L51/448 , H01L51/5253
摘要： An electronic device comprising: a substrate, an active layer, and an encapsulating layer comprising at least one wax.
摘要翻译：一种电子设备，包括：基底，活性层和包含至少一种蜡的包封层。

90. 发明授权

US07834199B2 Small molecular thiophene compound having divalent linkage 有权
标题翻译：具有二价键的小分子噻吩化合物
公开(公告)号：US07834199B2
公开(公告)日：2010-11-16
申请号：US11930389
申请日：2007-10-31
申请人： Beng S Ong , Ping Liu , Yiliang Wu
发明人： Beng S Ong , Ping Liu , Yiliang Wu
IPC分类号： C07D409/14
CPC分类号： H01L51/0036 , H01L51/0052 , H01L51/0068 , H01L51/0541 , H01L51/0545
摘要： A small molecular thiophene compound consisting of: at least one divalent linkage; and a plurality of thiophene units, each thiophene unit being represented by structure (A) wherein each thiophene unit is bonded at either or both of the second ring position and the fifth ring position, wherein m is 0, 1, or 2, wherein each thiophene unit is the same or different from each other in terms of substituent number, substituent identity, and substituent position, wherein each R1 is independently selected from the group consisting of: (a) a hydrocarbon group, (b) a heteroatom containing group, and (c) a halogen, wherein there is at least one thiophene unit where R1 is present at the third ring position or the fourth ring position, or at both the third ring position and the fourth ring position, wherein for any two adjacent thiophene units as represented by structure (A1): there is excluded the simultaneous presence of the same or different R1 at the 3-position of one thiophene unit and at the 3′-position of the other thiophene unit, and wherein the number of the thiophene units is at least 6.
摘要翻译：一种由以下组成的小分子噻吩化合物：至少一个二价键; 和多个噻吩单元，每个噻吩单元由结构（A）表示，其中每个噻吩单元在第二环位置和第五环位置的一个或两个上键合，其中m为0,1或2，其中每个噻吩单元根据取代基号，取代基同一性和取代基位置彼此相同或不同，其中每个R 1独立地选自：（a）烃基，（b）含杂原子的基团，和（c）卤素，其中存在至少一个噻吩单元，其中R 1存在于第三环位置或第四环位置，或者位于第三环位置和第四环位置，其中对于任何两个相邻的噻吩单元如结构（A1）所示：不排除在一个噻吩单元的3-位和另一个噻吩单元的3'-位上同时存在相同或不同的R 1，并且其中噻吩的数目单位至少6。

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