专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明申请

US20100129242A1 BRUSHLESS MOTOR AND FAN UNIT 有权
标题翻译：无刷电机和风扇单元
公开(公告)号：US20100129242A1
公开(公告)日：2010-05-27
申请号：US12696989
申请日：2010-01-29
申请人： Suguru Yamada , Takashi Nagamitsu , Yoshihisa Kato
发明人： Suguru Yamada , Takashi Nagamitsu , Yoshihisa Kato
IPC分类号： F04D25/06 , H02K11/00
CPC分类号： F04D25/0633 , F04D25/064 , F04D25/0646 , H02K3/522 , H02K7/14 , H02K11/33 , H02K2211/03
摘要： [Summary] [Object] A method to hook a magnet wire extracted from a coil[Means to Solve Problems] A stator core 35 includes a core back 352 of a substantially annular shape. At a radially outer end portion of the core back 352 four teeth 351 are arranged radially. At the teeth 351, a coil 371 is formed by winding a magnet wire 37 via an insulator 36. A first insulator 361 configuring a lower half of the insulator 36 includes a first core back insulating portion 3611, 1 first teeth insulating portion 3612, and a first cylindrical portion 3613. A hook portion 4 is formed at the first core back insulating portion 3611 at radially outer side, and between the teeth 351. The magnet wire 37 extracted from the coil 371 is hooked on the hook portion 4. The magnet wire 37 hooked on the hook portion 4 is lead the magnet wire 37 around the hook portion 4 as a base, and is soldered to a land 381 formed above a circuit board 38.
摘要翻译：摘要：一种钩绕从线圈提取的电磁线的方法[解决问题的手段]定子芯35包括大致环形的芯背352。在芯背352的径向外端部，四个齿351径向设置。在齿351处，通过绝缘体36缠绕电磁线37而形成线圈371.构成绝缘体36的下半部的第一绝缘体361包括第一芯背绝缘部分3611,1第一齿绝缘部分3612和第一圆筒部3613.在第一芯背绝缘部3611的径向外侧和齿351之间形成有钩部4.钩部41上钩住从线圈371抽出的磁线37.磁体钩在钩部4上的线37以作为基底的钩部4的方式引导电磁线37，并且焊接到形成在电路基板38上方的台阶381。

82. 发明申请

US20090152607A1 FERROELECTRIC STACKED-LAYER STRUCTURE, FIELD EFFECT TRANSISTOR, AND FERROELECTRIC CAPACITOR AND FABRICATION METHODS THEREOF 审中-公开
标题翻译：电磁堆叠层结构，场效应晶体管及其电解电容器及其制造方法
公开(公告)号：US20090152607A1
公开(公告)日：2009-06-18
申请号：US12328275
申请日：2008-12-04
申请人： Hiroyuki TANAKA , Yoshihisa Kato , Yukihiro Kaneko
发明人： Hiroyuki TANAKA , Yoshihisa Kato , Yukihiro Kaneko
IPC分类号： H01L29/78 , H01L21/04 , H01G4/06 , B32B9/00
CPC分类号： G11C11/22 , H01G4/1227 , H01G4/30 , H01L28/56 , H01L29/6684 , H01L29/78391 , Y10T428/26
摘要： A ferroelectric stacked-layer structure is fabricated by forming a first polycrystalline ferroelectric film on a polycrystalline or amorphous substrate, and after planarizing a surface of the first ferroelectric film, laminating on the first ferroelectric film a second thin ferroelectric film having the same crystalline structure as the first ferroelectric film. A field effect transistor or a ferroelectric capacitor includes the ferroelectric stacked-layer structure as a gate insulating film or a capacitor film.
摘要翻译：通过在多晶或非晶基板上形成第一多晶铁电体膜，并且在第一强电介质膜的表面平坦化之后，在第一强电介质膜上层叠具有与第一铁电体膜相同的结晶结构的第二薄铁电体膜，第一个铁电膜。场效应晶体管或铁电电容器包括作为栅极绝缘膜或电容器膜的铁电层叠层结构。

83. 发明申请

US20070063238A1 Semiconductor memory and driving method for the same 失效
标题翻译：半导体存储器和驱动方法相同
公开(公告)号：US20070063238A1
公开(公告)日：2007-03-22
申请号：US11520011
申请日：2006-09-13
申请人： Kazuhiro Kaibara , Shinzo Koyama , Yoshihisa Kato
发明人： Kazuhiro Kaibara , Shinzo Koyama , Yoshihisa Kato
IPC分类号： H01L29/94
CPC分类号： H01L27/11502 , H01L21/28291 , H01L29/78391
摘要： A semiconductor memory includes a conducting film formed on a substrate; a ferroelectric film formed above or below the conducting film; a source electrode and a drain electrode disposed in positions opposing the conducting film with the ferroelectric film sandwiched therebetween and spaced from each other; and an insulating film formed between the source electrode and the drain electrode.
摘要翻译：半导体存储器包括形成在基板上的导电膜; 形成在导电膜上方或下方的铁电膜; 源电极和漏电极，设置在与导电膜相对的位置，铁电体膜夹在它们之间并彼此间隔开; 以及形成在源电极和漏电极之间的绝缘膜。

84. 发明申请

US20070061507A1 Semiconductor storage apparatus 有权
标题翻译：半导体存储装置
公开(公告)号：US20070061507A1
公开(公告)日：2007-03-15
申请号：US11519221
申请日：2006-09-12
申请人： Shunichi Iwanari , Yasushi Gohou , Yoshihisa Kato
发明人： Shunichi Iwanari , Yasushi Gohou , Yoshihisa Kato
IPC分类号： G06F13/00 , G06F12/08 , G06F12/00
CPC分类号： G06F12/123 , G06F2212/2022
摘要： A semiconductor storage apparatus comprising: a ferroelectric memory; an SRAM 30; a counter 41; a CAM 10 that judges whether or not a block of data requested to be read out from the ferroelectric memory is stored in the SRAM 30; a storage control unit 51 that, if a result of the judgment is negative, performs a control to read out the requested block of data from the ferroelectric memory and stores a copy of the read-out block of data into a unit storage area in the SRAM 30 that corresponds to the count value indicated by the counter 41; and a counter control unit 52 that causes the counter 41 to update the count value each time a result of the judgment is negative.
摘要翻译：一种半导体存储装置，包括：铁电存储器; 一个SRAM 30; 柜台41 判断从铁电存储器请求读出的数据块是否存储在SRAM30中的CAM10; 存储控制单元51，如果判断结果为否定，则执行控制以从强电介质存储器读出所请求的数据块，并将读出的数据块的副本存储在该单元存储区域中对应于由计数器41指示的计数值的SRAM 30; 以及计数器控制单元52，每当判断结果为负时，使计数器41更新计数值。

85. 发明授权

US06950327B2 Semiconductor memory device and electronic apparatus mounting the same 失效
标题翻译：半导体存储器件和安装它的电子设备
公开(公告)号：US06950327B2
公开(公告)日：2005-09-27
申请号：US10686583
申请日：2003-10-17
申请人： Yasuhiro Shimada , Yoshihisa Kato , Takayoshi Yamada
发明人： Yasuhiro Shimada , Yoshihisa Kato , Takayoshi Yamada
IPC分类号： G11C11/22
CPC分类号： G11C11/22
摘要： In a ferroelectric capacitor, two displacements (points b and c) of a remanent polarization correspond to data “1” and one displacement (point a) of the remanent polarization corresponds to data “0”. When the data “1” is written, either of two electric voltage pulses different in potential or in pulse width is applied to the ferroelectric capacitor to position the displacement of the remanent polarization in the ferroelectric capacitor at the point b or at the point c. When the data “0” is written, on the other hand, the displacement of the remanent polarization in the ferroelectric capacitor is positioned at the point a.
摘要翻译：在铁电电容器中，剩余极化的两个位移（点b和c）对应于数据“1”，剩余极化的一个位移（点a）对应于数据“0”。当写入数据“1”时，电压或脉冲宽度不同的两个电压脉冲中的任一个施加到铁电电容器，以将铁电电容器中剩余极化的位移定位在点b处或点c处。另一方面，当写入数据“0”时，铁电电容器中剩余极化的位移位于点a处。

86. 发明授权

US06853576B2 Semiconductor device, method for fabricating the same, and method for driving the same 失效
标题翻译：半导体装置及其制造方法及其驱动方法
公开(公告)号：US06853576B2
公开(公告)日：2005-02-08
申请号：US10653201
申请日：2003-09-03
申请人： Yoshihisa Kato , Yasuhiro Shimada , Takayoshi Yamada
发明人： Yoshihisa Kato , Yasuhiro Shimada , Takayoshi Yamada
IPC分类号： G11C7/10 , G11C7/12 , G11C11/22
CPC分类号： G11C11/22 , G11C7/1048 , G11C7/12
摘要： A semiconductor memory device has a plurality of memory cells each having a first ferroelectric capacitor for storing data as a polarization value. First voltage applying means applies a first read voltage between the pair of electrodes of the first ferroelectric capacitor composing that one of the plurality of memory cells from which data is to be read. Data reading means detects the polarization value in the first ferroelectric capacitor when the first read voltage is applied between the pair of electrodes of the first ferroelectric capacitor and thereby reads the data stored in the first ferroelectric capacitor therefrom. A hysteresis loop in the first ferroelectric capacitor is shifted in a direction of voltage opposite in polarity to the first read voltage.
摘要翻译：半导体存储器件具有多个存储单元，每个存储单元具有用于存储数据作为极化值的第一铁电电容器。第一电压施加装置在构成要从其读取数据的多个存储单元中的一个的第一强电介质电容器的一对电极之间施加第一读取电压。当在第一强电介质电容器的一对电极之间施加第一读取电压时，数据读取装置检测第一铁电电容器中的极化值，从而读取存储在第一铁电电容器中的数据。第一铁电电容器中的磁滞回线在与第一读取电压的极性相反的电压方向上偏移。

87. 发明授权

US06753560B2 Semiconductor memory and method for driving the same 失效
标题翻译：半导体存储器及其驱动方法
公开(公告)号：US06753560B2
公开(公告)日：2004-06-22
申请号：US09891214
申请日：2001-06-26
申请人： Yoshihisa Kato , Yasuhiro Shimada
发明人： Yoshihisa Kato , Yasuhiro Shimada
IPC分类号： H01L2976
CPC分类号： H01L27/11502 , G11C11/22 , H01L28/55
摘要： A semiconductor memory of this invention is composed of an MFMIS transistor including a first field effect transistor and a ferroelectric capacitor formed on or above the first field effect transistor with a gate electrode of the first field effect transistor working as or being electrically connected to a lower electrode of the ferroelectric capacitor, an upper electrode of the ferroelectric capacitor working as a control gate and the first field effect transistor having a first well region; and a second field effect transistor having a second well region that is isolated from the first well region of the first field effect transistor. The first well region of the first field effect transistor is electrically connected to the source region of the second field effect transistor, and the gate electrode of the first field effect transistor is electrically connected to the drain region of the second field effect transistor.
摘要翻译：本发明的半导体存储器由包括形成在第一场效应晶体管上或第一场效应晶体管上的第一场效应晶体管和铁电电容器的MFMIS晶体管组成，其中第一场效应晶体管的栅电极用作或与下电铁电电容器的电极，作为控制栅极的铁电电容器的上电极和具有第一阱区的第一场效应晶体管; 以及具有与第一场效应晶体管的第一阱区隔离的第二阱区的第二场效应晶体管。第一场效应晶体管的第一阱区电连接到第二场效应晶体管的源极区域，第一场效应晶体管的栅极电连接到第二场效应晶体管的漏极区域。

88. 发明授权

US06579628B2 Multi-layered anti-coking heat resistant metal tube and method for manufacture thereof 有权
公开(公告)号：US06579628B2
公开(公告)日：2003-06-17
申请号：US09877085
申请日：2001-06-11
申请人： Yuko Takeuchi , Yoshihisa Kato , Noriyoshi Yokota , Seiya Asari , Masaki Tsuchiya , Takao Shimizu , Isao Tanaka
发明人： Yuko Takeuchi , Yoshihisa Kato , Noriyoshi Yokota , Seiya Asari , Masaki Tsuchiya , Takao Shimizu , Isao Tanaka
IPC分类号： F16L902
CPC分类号： F28F19/06 , B23K35/304 , B23K35/32 , C10G9/16 , C10G9/203 , F28D2021/0059 , Y10T428/12493 , Y10T428/12854 , Y10T428/12937
摘要： The multi-layered heat resistant metal tube is disclosed. This tube has excellent anti-coking characteristics and is suitable for use under the conditions where carbon tends to deposit and accumulate thereon due to contacting with hydrocarbons at a high temperature. The tube is made by forming weld-mounted overlaid layer of Cr—Ni alloy by building-up welding over the inner surface and/or the outer surface of a substrate tube made of a heat resistant metal. The Cr—Ni alloy comprises 35% by weight or more of Cr and satisfies the relationship: Ni(w%)≧0.5Cr(wt %). Building-up welding is preferably carried out by PPW (Plasma Powder Welding) in which the filler metal is supplied in the form of powder.

89. 发明授权

US06449185B2 Semiconductor memory and method for driving the same 失效
标题翻译：半导体存储器及其驱动方法
公开(公告)号：US06449185B2
公开(公告)日：2002-09-10
申请号：US09886995
申请日：2001-06-25
申请人： Yoshihisa Kato , Yasuhiro Shimada
发明人： Yoshihisa Kato , Yasuhiro Shimada
IPC分类号： G11C1122
CPC分类号： H01L27/11502 , G11C11/22 , H01L27/11585 , H01L27/1159
摘要： A semiconductor memory includes a storing transistor for storing data, wherein the storing transistor includes an MFS transistor, an MFIS transistor, or an MFMIS transistor, and a selecting transistor for selecting the storing transistor. The storing transistor is a first field effect transistor having a first well region. The selecting transistor is second field effect transistor having a second well region that is isolated from the first well region of the first field effect transistor. The semiconductor memory further includes a first voltage supply line for supplying a DC voltage to the first well region of the first field effect transistor, and a second voltage supply line, independent of the first voltage supply line, for supplying a DC voltage to the second well region of the second field effect transistor.
摘要翻译：半导体存储器包括用于存储数据的存储晶体管，其中存储晶体管包括MFS晶体管，MFIS晶体管或MFMIS晶体管，以及用于选择存储晶体管的选择晶体管。存储晶体管是具有第一阱区的第一场效应晶体管。选择晶体管是具有与第一场效应晶体管的第一阱区隔离的第二阱区的第二场效应晶体管。半导体存储器还包括用于向第一场效应晶体管的第一阱区域提供DC电压的第一电压供应线和独立于第一电压供应线的第二电压供应线，用于向第二场效应晶体管提供DC电压第二场效应晶体管的阱区。

90. 发明授权

US06421268B2 Method for driving semiconductor memory 有权
标题翻译：驱动半导体存储器的方法
公开(公告)号：US06421268B2
公开(公告)日：2002-07-16
申请号：US09899839
申请日：2001-07-09
申请人： Yoshihisa Kato , Yasuhiro Shimada
发明人： Yoshihisa Kato , Yasuhiro Shimada
IPC分类号： G11C1122
CPC分类号： G11C11/22
摘要： A multi-valued data is written in a ferroelectric capacitor, which stores a multi-valued data in accordance with displacement of polarization of a ferroelectric film thereof, by applying a relatively high first writing voltage or a relatively low second writing voltage between a first electrode and a second electrode of the ferroelectric capacitor. Next, a potential difference induced between the first and second electrodes is removed. Then, the multi-valued data is read by detecting the displacement of the polarization of the ferroelectric film by applying a reading voltage between the second electrode and a substrate where a reading FET for detecting the displacement of the polarization of the ferroelectric film is formed. The reading voltage has the same polarity as the first writing voltage and is set to such magnitude that, in applying the reading voltage, a first potential difference induced between the gate electrode of the reading FET and the substrate when the multi-valued data is written by applying the first writing voltage is smaller than a second potential difference induced between the gate electrode and the substrate when the multi-valued data is written by applying the second writing voltage.
摘要翻译：多值数据被写入铁电电容器中，该铁电电容器通过在第一电极之间施加相对较高的第一写入电压或相对较低的第二写入电压来存储根据其铁电体膜的极化位移的多值数据和铁电电容器的第二电极。接下来，去除在第一和第二电极之间引起的电位差。然后，通过在第二电极和衬底之间施加读取电压来检测强电介质膜的偏振的位移来读取多值数据，其中形成用于检测强电介质膜的偏振位移的读取FET。读取电压具有与第一写入电压相同的极性，并且被设置为使得在施加读取电压时，当写入多值数据时，在读取FET的栅电极和衬底之间感应的第一电位差通过施加第一写入电压小于通过施加第二写入电压来写入多值数据时在栅电极和衬底之间感应的第二电位差。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式