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81. 发明申请

US20060113581A1 Semiconductor memory device 审中-公开
标题翻译：半导体存储器件
公开(公告)号：US20060113581A1
公开(公告)日：2006-06-01
申请号：US11289441
申请日：2005-11-30
申请人： Takashi Miki , Hiroshige Hirano
发明人： Takashi Miki , Hiroshige Hirano
IPC分类号： H01L29/94
CPC分类号： H01L27/11502 , H01L23/564 , H01L27/11507 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor memory device having a memory cell array in which plural memory transistors and plural memory call capacitors, which are components of memory cells, are arranged, comprises a first wiring layer formed on the memory cell array, and a second wiring layer formed above the first wiring layer, wherein a wiring density of the first wiring layer on the memory cell array is higher than a wiring density of the second wiring layer on the memory cell array. Therefore, a hydrogen barrier property for the capacitors is improved, and an adverse effect due to stress applied to the capacitors is reduced, thereby suppressing deterioration of capacitor characteristics.
摘要翻译：一种具有存储单元阵列的半导体存储器件，其中布置有作为存储单元的组件的多个存储晶体管和多个存储器调用电容器，包括形成在存储单元阵列上的第一布线层和形成在存储单元阵列上方的第二布线层第一布线层，其中存储单元阵列上的第一布线层的布线密度高于存储单元阵列上的第二布线层的布线密度。因此，电容器的氢阻挡性提高，并且由于施加到电容器的应力引起的不利影响降低，从而抑制电容器特性的劣化。

82. 发明申请

US20060086101A1 Cryogenic system 有权
标题翻译：低温系统
公开(公告)号：US20060086101A1
公开(公告)日：2006-04-27
申请号：US11108724
申请日：2005-04-19
申请人： Takashi Miki
发明人： Takashi Miki
IPC分类号： F17C5/02 , F17C3/10
CPC分类号： F17C1/00 , F17C2201/0104 , F17C2201/0138 , F17C2201/0195 , F17C2203/032 , F17C2203/0391 , F17C2205/0329 , F17C2205/0335 , F17C2205/0352 , F17C2221/012 , F17C2221/017 , F17C2223/0161 , F17C2223/033 , F17C2227/0397 , F17C2227/044 , F17C2250/0439 , F17C2260/042 , F17C2270/0168 , F17C2270/0184 , F17C2270/0536 , F25B2400/17 , F25D19/006 , H01F6/04 , Y02E60/321
摘要： A cryogenic system includes a containment vessel in which a body to be cooled is housed in such a manner that the body is immersed in a liquid coolant; a tubular refrigerator sleeve; and a refrigerator, inserted in the opening section of the refrigerator sleeve, for recondensing coolant gas generated from the coolant, wherein a gas flow-forming means for forming a flow of purge gas toward an opening section of the refrigerator sleeve is provided. The purge gas prevents air from entering a refrigerator sleeve during the replacement of a refrigerator of a cryogenic system.
摘要翻译：低温系统包括容纳容器，其中容纳被冷却物体的方式使得身体浸入液体冷却剂中; 管状冰箱套管; 以及冰箱，其插入在所述冰箱套筒的开口部分中，用于再冷凝由所述冷却剂产生的冷却剂气体，其中，设置有朝向所述冰箱套筒的开口部分形成吹扫气体流的气体流动形成装置。吹扫气体在更换低温系统的冰箱期间防止空气进入冰箱套筒。

83. 发明申请

US20050259461A1 Ferroelectric memory and method for reading data from the ferroelectric memory 有权
标题翻译：铁电存储器和从铁电存储器读取数据的方法
公开(公告)号：US20050259461A1
公开(公告)日：2005-11-24
申请号：US11132196
申请日：2005-05-19
申请人： Kunisato Yamaoka , Hiroshige Hirano , Yasushi Gohou , Shunichi Iwanari , Yasuo Murakuki , Masahiko Sakagami , Tetsuji Nakakuma , Takashi Miki
发明人： Kunisato Yamaoka , Hiroshige Hirano , Yasushi Gohou , Shunichi Iwanari , Yasuo Murakuki , Masahiko Sakagami , Tetsuji Nakakuma , Takashi Miki
IPC分类号： G11C11/22 , H01L27/10
CPC分类号： G11C11/22
摘要： A ferroelectric memory of the present invention comprises: a plurality of normal cells, each of which includes a first ferroelectric capacitor for holding data and a first transistor connected to a first electrode of the first ferroelectric capacitor; a first bit line connected to the first transistor; a first bit line precharge circuit which is a switch circuit provided between the first bit line and a ground; and a word line connected to a gate of the first transistor. The word line is deactivated to disconnect the first ferroelectric capacitor from the first bit line before the first bit line precharge circuit is driven to discharge a potential of the first bit line.
摘要翻译：本发明的铁电存储器包括：多个正常单元，每个单元包括用于保持数据的第一铁电电容器和连接到第一铁电电容器的第一电极的第一晶体管; 连接到第一晶体管的第一位线; 第一位线预充电电路，其是设置在第一位线和地之间的开关电路; 以及连接到第一晶体管的栅极的字线。在驱动第一位线预充电电路以放电第一位线的电位之前，字线被去激活以将第一铁电电容器与第一位线断开。

84. 发明授权

US06936184B2 Conductive member for OA equipment 有权
标题翻译： OA设备导电部件
公开(公告)号：US06936184B2
公开(公告)日：2005-08-30
申请号：US10475202
申请日：2002-04-22
申请人： Takahiko Okazaki , Makoto Hasegawa , Takashi Miki , Takayuki Nagase , Hiroyuki Inai
发明人： Takahiko Okazaki , Makoto Hasegawa , Takashi Miki , Takayuki Nagase , Hiroyuki Inai
IPC分类号： B65H3/06 , B65H5/06 , C08G18/10 , C08K3/04 , C08K5/41 , C08K5/435 , C08L75/04 , F16C13/00 , G03G15/02 , G03G15/08 , G03G15/16 , G03G15/20 , G03G21/06 , G03G21/10 , F16L1/00
CPC分类号： G03G15/0233 , C08G18/10 , C08K5/435 , C08L75/04 , Y10T428/1352 , Y10T428/31547 , Y10T428/31551 , C08G18/3206
摘要： A conductive member for OA equipment (electrophotographic apparatus or electrostatic recording apparatus) which is obtainable from a composition comprising a non-ether-based polyurethane, carbon black and bis(trifluoromethanesulfonyl)imidolithium. The conductive member shows very stable conductivity in the volume resistivity range of 105 to 1012 Ω·cm, the conductivity of which is less dependent on the voltage applied and varies only slightly during continuous energization and upon changes in environmental factors such as temperature and humidity.
摘要翻译：用于OA设备（电子照相设备或静电记录设备）的导电构件，其可从包含非醚基聚氨酯，炭黑和双（三氟甲磺酰基）亚氨基锂的组合物获得。导电构件在体积电阻率范围内显示十分稳定的导电性，其电导率较不依赖于所施加的电压，并且仅仅变化在连续通电期间以及在诸如温度和湿度的环境因素的变化时略微。

85. 发明授权

US06352982B1 4,1-benzoxazepines, their analogues, and their use as somatostatin agonists 失效
标题翻译： 4,1-苯并氧氮杂，它们的类似物，以及它们作为生长抑素激动剂的用途
公开(公告)号：US06352982B1
公开(公告)日：2002-03-05
申请号：US09403066
申请日：1999-10-14
申请人： Hiroshi Mabuchi , Nobuhiro Suzuki , Takashi Miki
发明人： Hiroshi Mabuchi , Nobuhiro Suzuki , Takashi Miki
IPC分类号： C07D26714
CPC分类号： C07D231/12 , C07D233/56 , C07D243/24 , C07D249/08 , C07D267/14 , C07D281/10 , C07D413/04 , C07D413/06 , C07D413/12 , C07D417/06 , C07D417/12
摘要： The present invention provides a compound of the formula: wherein ring A is an optionally substituted aromatic hydrocarbon ring or aromatic heterocyclic ring; ring B is an optionally substituted aromatic hydrocarbon ring or aromatic heterocyclic ring; Z is an optionally substituted cyclic group or linear hydrocarbon group; R1 is a hydrogen atom, an optionally substituted hydrocarbon group or heterocyclic ring; R2 is an optionally substituted amino group; D is a bond or an optionally substituted divalent hydrocarbon group; E is a bond, —CON(Ra)—, —N(Ra)CO—, —N(Rb)CON(Rc)—, —N(Rd)COO—, —N(Re)SO2—, —COO—, —N(Rf)—, —O—, —S— —SO—, —SO2—, (in which Ra, Rb, Rc, Rd, Re and Rf are respectively a hydrogen atom or an optionally substituted hydrocarbon group); G is a bond or an optionally divalent substituted hydrocarbon group; L is a divalent group; ring B may form an optionally substituted non-aromatic condensed nitrogen-containing heterocyclic ring by combining with R2; X is two hydrogen atoms, an oxygen atom or a sulfur atom; is a single bond or a double bond, and Y is a nitrogen atom when is a double bond, or an oxygen atom, —N(R4)— (in which R4 is a hydrogen atom, an optionally substituted hydrocarbon group or an acyl group) or S(O)n (in which n is 0, 1 or 2) when is a single bond, or a salt thereof, which have somatostatin receptor agonistic action.
摘要翻译：本发明提供下式的化合物：其中环A是任选取代的芳族烃环或芳族杂环; 环B是任选取代的芳族烃环或芳族杂环; Z是任选取代的环状基团或直链烃基; R1是氢原子，任选取代的烃基或杂环; R2是任选取代的氨基; D是键或任选取代的二价烃基; E是键，-CON（Ra） - ， - N（Ra）CO-，-N（Rb）CON（Rc） - ， - N（Rd）COO-，-N（Re）SO2-，-COO- ，-N（R f） - ， - O - ， - S - -SO - ， - SO 2 - （其中Ra，Rb，Rc，Rd，Re和Rf分别为氢原子或任选取代的烃基）。 G是键或任选的二价取代的烃基; L是二价基团;环B可以与R2结合形成任选取代的非芳族稠合含氮杂环; X是两个氢原子，一个氧原子或一个硫原子; 是单键或双键，当是双键或氧原子-N（R4） - （其中R4是氢原子，任选取代的烃基或酰基））或S（O）n（其中n为0,1或2），当是单键时，或其盐，其具有生长抑素受体激动作用。

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