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81. 发明申请

US20050221599A1 Etching method, semiconductor and fabricating method for the same 有权
标题翻译：蚀刻方法，半导体及其制造方法相同
公开(公告)号：US20050221599A1
公开(公告)日：2005-10-06
申请号：US11131180
申请日：2005-05-18
申请人： Kenshi Kanegae , Shinichi Imai , Hideo Nakagawa
发明人： Kenshi Kanegae , Shinichi Imai , Hideo Nakagawa
IPC分类号： H01L21/302 , H01L21/3065 , H01L21/3105 , H01L21/311 , H01L21/312 , H01L21/4763 , H01L21/768 , H01L23/522
CPC分类号： H01L21/31053 , H01L21/31116 , H01L21/31144 , H01L21/76801 , H01L21/76802 , H01L21/76804 , H01L21/76805 , H01L21/76807 , H01L21/76808 , H01L21/76822 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76835
摘要： An organic/inorganic hybrid film represented by SiCxHyOz (x>0, y≧0, z>0) is plasma-etched with an etching gas containing fluorine, carbon and nitrogen. During the etching, a carbon component is eliminated from the surface portion of the organic/inorganic hybrid film due to the existence of the nitrogen in the etching gas, to thereby reform the surface portion. The reformed surface portion is nicely plasma-etched with the etching gas containing fluorine and carbon.
摘要翻译：由Si x Si x O z（x> 0，y> = 0，z> 0）表示的有机/无机混合膜是用含氟，碳和氮的蚀刻气体进行等离子体蚀刻。在蚀刻期间，由于蚀刻气体中存在氮，从有机/无机混合膜的表面部分除去碳成分，从而使表面部分重新形成。重整表面部分用含氟和碳的蚀刻气体进行等离子体蚀刻。

82. 发明授权

US06650960B2 Machining control system 有权
标题翻译：加工控制系统
公开(公告)号：US06650960B2
公开(公告)日：2003-11-18
申请号：US09800521
申请日：2001-03-08
申请人： Yoshiaki Kakino , Tomonori Sato , Makoto Fujishima , Hisashi Otsubo , Hideo Nakagawa , Yoshinori Yamaoka
发明人： Yoshiaki Kakino , Tomonori Sato , Makoto Fujishima , Hisashi Otsubo , Hideo Nakagawa , Yoshinori Yamaoka
IPC分类号： G06F1900
CPC分类号： G05B19/4163 , G05B2219/49061 , G05B2219/49069 , Y10T483/12
摘要： A machining control system maintaining optimum machining states and enhancing efficiency and reliability even when an actual machining environment fluctuates. The machining control system includes a machining information determination portion for determining initial machining conditions on the basis of information stored in a machining data base and in accordance with adaptive control characteristics defined by adaptive control modes and adaptive control parameters, and an adaptive control portion for controlling machining by changing the machining conditions in accordance with the machining states observed during machining with the initial machining conditions as an initial value of the machining conditions.
摘要翻译：一种加工控制系统，即使在实际加工环境波动的情况下，也能保持最佳加工状态，提高效率和可靠性。该加工控制系统包括：加工信息确定部，用于根据存储在加工数据库中的信息，并根据由自适应控制模式和自适应控制参数定义的自适应控制特性来确定初始加工条件;以及自适应控制部分，用于控制通过根据加工条件下的加工状态，以加工条件的初始值作为起始加工条件，根据加工状态进行加工。

83. 发明授权

US06531402B2 Method for etching organic film, method for fabricating semiconductor device and pattern formation method 有权
标题翻译：蚀刻有机膜的方法，制造半导体器件的方法和图案形成方法
公开(公告)号：US06531402B2
公开(公告)日：2003-03-11
申请号：US09798912
申请日：2001-03-06
申请人： Hideo Nakagawa
发明人： Hideo Nakagawa
IPC分类号： H01L21302
CPC分类号： H01L21/76802 , H01L21/31138 , H01L21/31144 , H01L21/76804
摘要： An organic film is etched by using plasma generated from an etching gas containing a first gas including a straight chain saturated hydrocarbon and a second gas including a nitrogen component.
摘要翻译：通过使用由含有包含直链饱和烃的第一气体和包含氮组分的第二气体的蚀刻气体产生的等离子体蚀刻有机膜。

84. 发明授权

US06381435B2 Color image forming apparatus 有权
标题翻译：彩色图像形成装置
公开(公告)号：US06381435B2
公开(公告)日：2002-04-30
申请号：US09734555
申请日：2000-12-13
申请人： Tadashi Shinohara , Yasushi Nakazato , Toshiya Sato , Mitsugu Sugiyama , Nobuo Iwata , Motonori Hanada , Hideo Nakagawa
发明人： Tadashi Shinohara , Yasushi Nakazato , Toshiya Sato , Mitsugu Sugiyama , Nobuo Iwata , Motonori Hanada , Hideo Nakagawa
IPC分类号： G03G1501
CPC分类号： H04N1/506 , G03G15/0194 , G03G2215/0161 , H04N1/4078
摘要： An image forming apparatus includes a plurality of image formation units which print an image of different color on a paper and also form positional deviation detection marks and image density regulation marks, on a conveyer belt or on at least one of a recording medium and an intermediate transfer body that conveys the paper, when such a request is received. When requests for formation of the positional deviation detection marks and the request for the formation of the image density regulation marks is received at the same time or at substantially the same time, the main CPU orchestrates the conveyer belt and the image forming units to form the positional deviation detection marks and the image density regulation marks in continuation.
摘要翻译：图像形成装置包括多个图像形成单元，其在纸上打印不同颜色的图像，并且还在输送带上或记录介质和中间体中的至少一个上形成位置偏差检测标记和图像浓度调节标记当接收到这样的请求时传送纸的传送体。当同时或者基本上同时接收到形成位置偏差检测标记的请求和形成图像浓度调节标记的请求时，主CPU对传送带和图像形成单元进行编排，形成位置偏差检测标记和图像浓度调节标记继续。

85. 发明授权

US5296278A Gastight woven fabric sheet for air bags and a process for producing same 失效
标题翻译：用于气囊的气密织物片及其制造方法
公开(公告)号：US5296278A
公开(公告)日：1994-03-22
申请号：US566093
申请日：1993-05-27
申请人： Kunio Nishimura , Hideo Nakagawa , Nobuo Takahashi , Kiyoshi Maruo
发明人： Kunio Nishimura , Hideo Nakagawa , Nobuo Takahashi , Kiyoshi Maruo
IPC分类号： B60R21/16 , B60R21/235 , D03D1/02 , B29D22/00
CPC分类号： B60R21/235 , D03D1/02 , Y10T428/1362 , Y10T442/2861 , Y10T442/3065
摘要： A gastight woven fabric sheet for air bags having no risk of burning a person due to formation of gas-permeable perforations and gas flowing out when the air bag is inflated, a high burst strength due to a reinforcing effect by adhesion, and a satisfactory feel, comprising a woven fabric composed of a plurality of warps and wefts each comprising a polyester multifilament having a yarn thickness of 200 to 550 deniers and a twist multiplier of 3,000 or less, and having a smooth surface formed by a calendering and a non-smoothed opposite surface thereof, the woven fabric having a gas-permeability function (ml/cm.sup.2 /sec) of 7.874 p to 78.74 p (wherein p is a pressure between 0 to 0.03 kg/cm.sup.2 G); a radius R1 (mm) of curvature of a smoothed surface side half portion of a cross-sectional profile of a warp or weft yarn located in the smoothed surface portion of the fabric, larger than a radius R2 (mm) of curvature of an opposite side half portion of a cross-sectional profile of the above-mentioned warp or weft yarn and than a radius R3 (mm) of curvature of a non-smoothed surface side half portion of a cross-sectional profile of a warp or weft yarn located in the non-smoothed surface portion of the woven fabric, which R3 is in the range of from 0.5 to 3.5; a difference in average deviation of 0.0005 or more between surface frictional coefficients of the smoothed surface and the non-smoothed surface of the woven fabric; a difference in average deviation of 0.5 .mu.m or more between surface roughnesses of the above-mentioned surfaces; and a fiber packing of 70 to 85%.
摘要翻译： PCT No.PCT / JP92 / 01217 Sec。 371日期：1993年5月27日 102（e）日期1993年5月27日PCT提交1992年9月25日PCT公开号出版物WO93 / 05985 日期：1993年4月1日。气囊气密织造织物片，当气囊膨胀时，由于形成气体渗透性穿孔和气体而没有燃烧人的气囊，由于增强效应而具有高的爆裂强度通过粘合和令人满意的手感，包括由多根经纱和纬纱组成的织物，每个纬纱和纬纱均包含纱线厚度为200至550旦尼尔的捻合倍数为3,000或更小的聚酯复丝，并且具有由压延和非平滑的相对表面，织物具有7.874p至78.74p（其中p为0至0.03kg / cm2G之间的压力）的气体透过性（ml / cm 2 / sec）; 位于织物的平滑表面部分中的经纱或纬纱的横截面轮廓的平滑表面侧半部的曲率半径R1（mm）大于相对的曲率半径R2（mm）上述经纱或纬纱的横截面轮廓的侧半部分，而不是位于经纱或纬纱的横截面轮廓的非光滑表面侧半部分的曲率半径R3（mm）在织物的未光滑表面部分中，R3在0.5-3.5的范围内; 在平滑表面的表面摩擦系数与机织物的未平滑表面之间的平均偏差为0.0005以上的差异; 在上述表面的表面粗糙度之间的平均偏差为0.5（my）m以上的差异; 纤维包装为70〜85％。

86. 发明授权

US09048687B2 Power supply device and control method for power supply 有权
标题翻译：电源设备及电源控制方法
公开(公告)号：US09048687B2
公开(公告)日：2015-06-02
申请号：US13652688
申请日：2012-10-16
申请人： Mikio Nakajima , Tetsuya Yano , Hideo Nakagawa , Yu Yoshioka
发明人： Mikio Nakajima , Tetsuya Yano , Hideo Nakagawa , Yu Yoshioka
IPC分类号： H02J9/00 , H02J1/10 , H02J1/14 , H02J7/34
CPC分类号： H02J1/108 , H02J1/14 , H02J7/345 , Y10T307/615
摘要： A power supply device includes: a main power supply configured to feed power to a load with constant-voltage output using an external power supply; an auxiliary power supply configured to feed power to the load using an internal power storage unit; a constant-current/constant-voltage switching power supply configured to feed a part of current flowing through the load by which part the current exceeds an upper limit value of output current of the main power supply instructed by a current upper-limit instruction unit, with the constant-current output from the auxiliary power supply; and an output switching unit switching the constant-current/constant-voltage switching power supply from the constant-current output to the constant-voltage output when a power cut monitoring unit determines stop of power supply from the external power supply.
摘要翻译：电源装置包括：主电源，其被配置为使用外部电源向具有恒定电压输出的负载供电; 辅助电源，被配置为使用内部蓄电单元向负载供电; 恒流/恒压开关电源，被配置为馈送流过所述负载的电流的一部分，所述电流的一部分超过由所述当前上限指令单元指示的所述主电源的输出电流的上限值，辅助电源的恒流输出; 以及输出切换单元，当断电监视单元确定从外部电源的电源停止时，将恒定电流/恒定电压开关电源从恒定电流输出切换到恒定电压输出。

87. 发明授权

US08709686B2 Photomask blank, process for production of photomask, and chromium-containing material film 有权
公开(公告)号：US08709686B2
公开(公告)日：2014-04-29
申请号：US13883850
申请日：2011-11-18
申请人： Hiroki Yoshikawa , Souichi Fukaya , Yukio Inazuki , Tsuneo Yamamoto , Hideo Nakagawa
发明人： Hiroki Yoshikawa , Souichi Fukaya , Yukio Inazuki , Tsuneo Yamamoto , Hideo Nakagawa
IPC分类号： G03F1/50
摘要： In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400° C. or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision.

88. 发明申请

US20130230796A1 PHOTOMASK BLANK, PROCESS FOR PRODUCTION OF PHOTOMASK, AND CHROMIUM-CONTAINING MATERIAL FILM 有权
公开(公告)号：US20130230796A1
公开(公告)日：2013-09-05
申请号：US13883850
申请日：2011-11-18
申请人： Hiroki Yoshikawa , Souichi Fukaya , Yukio Inazuki , Tsuneo Yamamoto , Hideo Nakagawa
发明人： Hiroki Yoshikawa , Souichi Fukaya , Yukio Inazuki , Tsuneo Yamamoto , Hideo Nakagawa
IPC分类号： G03F1/50
CPC分类号： G03F1/80 , B32B15/01 , C22C27/06 , C23C14/0641 , C23C14/0676 , G03F1/00 , G03F1/30 , G03F1/50 , G03F1/54
摘要： In the chromium-containing material film of the present invention, an element is added thereto and is capable of bringing a mixture of the element and the chromium into a liquid phase at a temperature of 400° C. or lower. The use of such a chromium-containing material film as an optical film (e.g., a light-shielding film, an etching mask film, or an etching stopper film) of a photo mask blank can achieve an improvement in chlorine-dry etching while retaining the same optical characteristics and the like as those of the conventional chromium-containing material film, thereby increasing the patterning precision.

89. 发明申请

US20100102449A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100102449A1
公开(公告)日：2010-04-29
申请号：US12649002
申请日：2009-12-29
申请人： Atsushi IKEDA , Hideo Nakagawa , Nobuo Aoi
发明人： Atsushi IKEDA , Hideo Nakagawa , Nobuo Aoi
IPC分类号： H01L23/48 , H01L21/768
CPC分类号： H01L21/76843 , H01L21/76831 , H01L21/76846 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device including: an insulating film (6) formed over a substrate (1); a buried metal interconnect (10) formed in the insulating film (6); and a barrier metal film (A1) formed between the insulating film (6) and the metal interconnect (10), the barrier metal film (A1) includes a metal oxide film (7), a metal compound film (8) and a metal film (9) stacked in this order from a side in which the insulating film (6) exists to a side in which the metal interconnect (10) exists. Elastic modulus of the metal compound film (8) is larger than that of the metal oxide film (7).
摘要翻译：一种半导体器件，包括：形成在衬底（1）上的绝缘膜（6）; 形成在所述绝缘膜（6）中的掩埋金属互连（10）; 和形成在绝缘膜（6）和金属互连件（10）之间的阻挡金属膜（A1），阻挡金属膜（A1）包括金属氧化物膜（7），金属化合物膜（8）和金属膜（9）从绝缘膜（6）的存在一侧到存在金属互连（10）的一侧依次层叠。金属化合物膜（8）的弹性模量大于金属氧化物膜（7）的弹性模量。

90. 发明授权

US07663239B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07663239B2
公开(公告)日：2010-02-16
申请号：US11630799
申请日：2005-05-20
申请人： Atsushi Ikeda , Hideo Nakagawa , Nobuo Aoi
发明人： Atsushi Ikeda , Hideo Nakagawa , Nobuo Aoi
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40 , H01L21/44
CPC分类号： H01L21/76843 , H01L21/76831 , H01L21/76846 , H01L23/53238 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device including: an insulating film (6) formed over a substrate (1); a buried metal interconnect (10) formed in the insulating film (6); and a barrier metal film (A1) formed between the insulating film (6) and the metal interconnect (10), the barrier metal film (A1) includes a metal oxide film (7), a metal compound film (8) and a metal film (9) stacked in this order from a side in which the insulating film (6) exists to a side in which the metal interconnect (10) exists. Elastic modulus of the metal compound film (8) is larger than that of the metal oxide film (7).
摘要翻译：一种半导体器件，包括：形成在衬底（1）上的绝缘膜（6）; 形成在所述绝缘膜（6）中的掩埋金属互连（10）; 和形成在绝缘膜（6）和金属互连件（10）之间的阻挡金属膜（A1），阻挡金属膜（A1）包括金属氧化物膜（7），金属化合物膜（8）和金属膜（9）从绝缘膜（6）的存在一侧到存在金属互连（10）的一侧依次层叠。金属化合物膜（8）的弹性模量大于金属氧化物膜（7）的弹性模量。

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