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81. 发明授权

US06863019B2 Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas 失效
标题翻译：半导体器件制造室清洗方法和清洁气体再循环的设备
公开(公告)号：US06863019B2
公开(公告)日：2005-03-08
申请号：US10159794
申请日：2002-05-30
申请人： Shamouil Shamouilian , Canfeng Lai , Michael Santiago Cox , Padmanabhan Krishnaraj , Tsutomu Tanaka , Sebastien Raoux , Peter I. Porshnev , Thomas Nowak
发明人： Shamouil Shamouilian , Canfeng Lai , Michael Santiago Cox , Padmanabhan Krishnaraj , Tsutomu Tanaka , Sebastien Raoux , Peter I. Porshnev , Thomas Nowak
IPC分类号： B08B7/00 , C23C16/44 , C23C16/452 , C23C16/455 , H01J37/32 , C23C16/00 , C23F1/00 , H01L21/306
CPC分类号： B08B7/0035 , B08B7/00 , C23C16/4405 , C23C16/452 , C23C16/45593 , H01J37/3244 , H01J37/32844 , H01J2237/335 , Y02C20/30
摘要： A method of cleaning a semiconductor fabrication processing chamber involves recirculation of cleaning gas components. Consequently, input cleaning gas is utilized efficiently, and undesirable emissions are reduced. The method includes flowing a cleaning gas to an inlet of a processing chamber, and exposing surfaces of the processing chamber to the cleaning gas to clean the surfaces, thereby producing a reaction product. The method further includes removing an outlet gas including the reaction product from an outlet of the processing chamber, separating at least a portion of the reaction product from the outlet gas, and recirculating a portion of the outlet gas to the inlet of the processing chamber.
摘要翻译：清洁半导体制造处理室的方法包括清洁气体组分的再循环。因此，有效地利用输入清洁气体，并且减少不期望的排放。该方法包括使清洁气体流到处理室的入口，并将处理室的表面暴露于清洁气体以清洁表面，从而产生反应产物。该方法还包括从处理室的出口除去包括反应产物的出口气体，将至少一部分反应产物与出口气体分离，并将出口气体的一部分再循环到处理室的入口。

82. 发明授权

US06468778B1 Process for the inactivation of viruses 有权
标题翻译：灭活病毒的过程
公开(公告)号：US06468778B1
公开(公告)日：2002-10-22
申请号：US09572471
申请日：2000-05-17
申请人： Eckhard Schueler , Gerhardt Kumpe , Thomas Nowak
发明人： Eckhard Schueler , Gerhardt Kumpe , Thomas Nowak
IPC分类号： C12N704
CPC分类号： A61L2/0011 , A61L2/0023
摘要： A process for the inactivation and/or elimination of coated and/or noncoated viruses from a plasma protein solution by addition of an ammonium salt at alkaline pHs is described, in which a chromatographically prepurified plasma protein solution is subjected to an incubation at room temperature and at an ammonium salt concentration of 13 to 22% by weight, pasteurized at approximately 60° C. for several hours after separation of the precipitates and removal of the ammonium salt down to a residual content of less than 0.5 mol/l and then processed to give a therapeutically employable plasma protein preparation.
摘要翻译：描述了通过在碱性pH下加入铵盐从血浆蛋白溶液中灭活和/或消除包衣和/或未包衣病毒的方法，其中将色谱法预纯化的血浆蛋白溶液在室温下进行温育，在13至22重量％的铵盐浓度下，分离出沉淀物并将铵盐除去至少于0.5mol / l的残留物，然后在约60℃下巴氏杀菌数小时，然后处理至给予治疗上可用的血浆蛋白制剂。

83. 发明授权

US06444035B1 Conveyorized vacuum injection system 失效
标题翻译：输送真空注射系统
公开(公告)号：US06444035B1
公开(公告)日：2002-09-03
申请号：US09493873
申请日：2000-01-28
申请人： Thomas Nowak , Jules Gordon , Kevin Avery , David Thurlow
发明人： Thomas Nowak , Jules Gordon , Kevin Avery , David Thurlow
IPC分类号： B29C3100
CPC分类号： H01L21/67126 , B29C39/10 , B29C39/24 , B29C39/42
摘要： The present invention provides a method and apparatus for dispensing materials onto a substrate. In one embodiment, a dispensing system includes a controller, a vacuum source in electrical communication with the controller, the vacuum source applying a vacuum to at least a portion of the substrate in response to an instruction from the controller, an injector in electrical communication with the controller, the injector comprising a valve in communication with a pressure source and a material port in communication with a material source, the valve permitting material from the material source to be dispensed onto a substrate in accordance with an instruction from the controller. In one embodiment, the dispensing system also includes a trap in communication with the vacuum source, where the trap substantially prevents excessive material dispensed by the injector from contacting the vacuum source.
摘要翻译：本发明提供一种用于将材料分配到基底上的方法和装置。在一个实施例中，分配系统包括控制器，与控制器电连通的真空源，真空源响应于来自控制器的指令向基板的至少一部分施加真空，喷射器与控制器，喷射器包括与压力源连通的阀和与材料源连通的材料端口，阀允许根据来自控制器的指令从材料源分配到基板上的材料。在一个实施例中，分配系统还包括与真空源连通的陷阱，其中捕集器基本上防止喷射器分配的过量材料接触真空源。

84. 发明授权

US6163007A Microwave plasma generating apparatus with improved heat protection of sealing O-rings 有权
标题翻译：微波等离子体发生装置具有改进的密封O形圈的热保护
公开(公告)号：US6163007A
公开(公告)日：2000-12-19
申请号：US272898
申请日：1999-03-19
申请人： Tsutomu Tanaka , Thomas Nowak , Chau Nguyen , Hari Ponnekanti , Kevin Fairbairn
发明人： Tsutomu Tanaka , Thomas Nowak , Chau Nguyen , Hari Ponnekanti , Kevin Fairbairn
IPC分类号： H05H1/46 , C23C16/44 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , B23K9/00
CPC分类号： H01J37/32458 , H01J37/32192 , H01J2237/166
摘要： Apparatus for dissociating cleaning gas such as NF.sub.3 for use in semiconductor manufacturing includes a housing enclosing a microwave resonator to which microwave energy is applied, a plasma tube within the housing and within which cleaning gas flows and is dissociated by the microwave energy. The plasma tube has two ends into and out of which the cleaning gas flows. A first and a second structural assembly thermally protects and seals each end of the plasma tube against atmospheric leaks. Each structural assembly has a metal collar and a sealing O-ring fitting tightly around a respective end of the plasma tube. Each metal collar includes a thin layer of elastomeric material of high thermal conductivity for conducting heat through the collar away from the end of the plasma tube thereby protecting the O-ring from heat damage. This permits the apparatus to operate more efficiently. A fan forces ambient air over the apparatus.
摘要翻译：用于解离诸如NF3的清洁气体用于半导体制造的装置包括：包围微波谐振器的壳体，微波能量被施加到微波谐振器，壳体内的等离子体管，其中清洁气体流动并由微波能量解离。等离子体管具有两个进入和离开清洁气体的端部。第一和第二结构组件热保护和密封等离子体管的每一端以抵抗大气泄漏。每个结构组件具有金属环和密封O形圈，紧密地围绕等离子体管的相应末端。每个金属套环包括具有高导热性的薄层弹性体材料，用于通过套环远离等离子体管的端部传导热量，从而保护O形环免受热损伤。这使得设备更有效地操作。风扇迫使环境空气流过设备。

85. 发明授权

US08283237B2 Fabrication of through-silicon vias on silicon wafers 有权
标题翻译：在硅晶片上制造通硅通孔
公开(公告)号：US08283237B2
公开(公告)日：2012-10-09
申请号：US12978129
申请日：2010-12-23
申请人： Nagarajan Rajagopalan , Ji Ae Park , Ryan Yamase , Shamik Patel , Thomas Nowak , Li-Qun Xia , Bok Hoen Kim , Ran Ding , Jim Baldino , Mehul Naik , Sesh Ramaswami
发明人： Nagarajan Rajagopalan , Ji Ae Park , Ryan Yamase , Shamik Patel , Thomas Nowak , Li-Qun Xia , Bok Hoen Kim , Ran Ding , Jim Baldino , Mehul Naik , Sesh Ramaswami
IPC分类号： H01L21/30 , H01L21/4763 , H01L21/44 , H01L21/31
CPC分类号： H01L24/13 , H01L21/02074 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/02274 , H01L21/3065 , H01L21/31116 , H01L21/67103 , H01L21/67109 , H01L21/6719 , H01L21/6835 , H01L21/68792 , H01L21/76829 , H01L21/76831 , H01L21/76832 , H01L21/76834 , H01L21/76898 , H01L24/11 , H01L24/742 , H01L2221/68372 , H01L2221/68381 , H01L2224/11002 , H01L2224/11452 , H01L2224/1182 , H01L2224/13562 , H01L2224/1357 , H01L2224/13687 , H01L2224/742 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01068 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/014 , H01L2924/09701 , H01L2924/14 , H01L2924/351 , H01L2924/05042 , H01L2924/00
摘要： A through-silicon via fabrication method comprises forming a substrate by bonding the front surface of a silicon plate to a carrier using an adhesive layer therebetween to expose the back surface of the silicon plate. A silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate. A plurality of through holes are etched in the silicon plate, the through holes comprising sidewalls and bottom walls. A metallic conductor is deposited in the through holes to form a plurality of through-silicon vias.
摘要翻译：通过硅通孔的制造方法包括通过使用其间的粘合剂层将硅板的前表面粘合到载体上来形成基板，以暴露硅板的背面。氮化硅钝化层沉积在衬底的硅板的暴露的背面上。在硅板中蚀刻多个通孔，通孔包括侧壁和底壁。金属导体沉积在通孔中以形成多个通硅通孔。

86. 发明授权

US08197636B2 Systems for plasma enhanced chemical vapor deposition and bevel edge etching 有权
标题翻译：等离子体增强化学气相沉积和斜边蚀刻系统
公开(公告)号：US08197636B2
公开(公告)日：2012-06-12
申请号：US12106881
申请日：2008-04-21
申请人： Ashish Shah , Dale R. DuBois , Ganesh Balasubramanian , Mark A. Fodor , Eui Kyoon Kim , Chiu Chan , Karthik Janakiraman , Thomas Nowak , Joseph C. Werner , Visweswaren Sivaramakrishnan , Mohamad Ayoub , Amir Al-Bayati , Jianhua Zhou
发明人： Ashish Shah , Dale R. DuBois , Ganesh Balasubramanian , Mark A. Fodor , Eui Kyoon Kim , Chiu Chan , Karthik Janakiraman , Thomas Nowak , Joseph C. Werner , Visweswaren Sivaramakrishnan , Mohamad Ayoub , Amir Al-Bayati , Jianhua Zhou
IPC分类号： C23F1/00 , C23C16/00 , H01L21/306
CPC分类号： H01L21/6719 , H01J37/32366 , H01J2237/3321 , H01L21/67201 , H01L21/67207
摘要： Embodiments described herein relate to a substrate processing system that integrates substrate edge processing capabilities. Illustrated examples of the processing system include, without limitations, a factory interface, a loadlock chamber, a transfer chamber, and one or more twin process chambers having two or more processing regions that are isolatable from each other and share a common gas supply and a common exhaust pump. The processing regions in each twin process chamber include separate gas distribution assemblies and RF power sources to provide plasma at selective regions on a substrate surface in each processing region. Each twin process chamber is thereby configured to allow multiple, isolated processes to be performed concurrently on at least two substrates in the processing regions.
摘要翻译：本文所述的实施例涉及集成衬底边缘处理能力的衬底处理系统。处理系统的说明性示例包括但不限于工厂接口，负载锁定室，传送室和具有两个或更多个处理区域的一个或多个双处理室，其可彼此隔离并且共享公共气体供应和普通排气泵。每个双处理室中的处理区域包括单独的气体分配组件和RF功率源，以在每个处理区域的衬底表面上的选择性区域提供等离子体。因此，每个双处理室被配置为允许在处理区域中的至少两个基板上同时执行多个隔离过程。

87. 发明申请

US20110100394A1 SUPERIMPOSITION OF RAPID PERIODIC AND EXTENSIVE POST MULTIPLE SUBSTRATE UV-OZONE CLEAN SEQUENCES FOR HIGH THROUGHPUT AND STABLE SUBSTRATE TO SUBSTRATE PERFORMANCE 有权
标题翻译：快速周期性和扩展后多层底物紫外线臭氧清除序列用于高通量和稳定的基底以达到基础性能
公开(公告)号：US20110100394A1
公开(公告)日：2011-05-05
申请号：US12987948
申请日：2011-01-10
申请人： Sang In Yi , Kelvin Chan , Thomas Nowak , Alexandros T. Demos
发明人： Sang In Yi , Kelvin Chan , Thomas Nowak , Alexandros T. Demos
IPC分类号： B08B7/00
CPC分类号： H01L21/67028 , B08B7/0057 , H01L21/67115 , H01L21/6719
摘要： A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.
摘要翻译：一种用于清洁衬底处理室的方法，包括在限定一个或多个处理区域的处理室内处理一批衬底。处理批次的基板可以在具有各种子步骤的子程序中执行，该子程序包括在处理室内处理来自批料的基板，从处理室移除基板，将臭氧引入处理室，以及将该室暴露于紫外线不到一分钟。可以重复衬底批处理子步骤，直到处理批次中的最后一个衬底。在批次处理最后一个基板之后，该方法包括从处理室移除最后的基板，将臭氧引入处理室; 并将处理室暴露于紫外光下3至15分钟。

88. 发明申请

US20100018548A1 SUPERIMPOSITION OF RAPID PERIODIC AND EXTENSIVE POST MULTIPLE SUBSTRATE UV-OZONE CLEAN SEQUENCES FOR HIGH THROUGHPUT AND STABLE SUBSTRATE TO SUBSTRATE PERFORMANCE 审中-公开
标题翻译：快速周期性和扩展后多层底物紫外线臭氧清除序列用于高通量和稳定的基底以达到基础性能
公开(公告)号：US20100018548A1
公开(公告)日：2010-01-28
申请号：US12178523
申请日：2008-07-23
申请人： Sang In Yi , Kelvin Chan , Thomas Nowak , Alexandros T. Demos
发明人： Sang In Yi , Kelvin Chan , Thomas Nowak , Alexandros T. Demos
IPC分类号： B08B7/00
CPC分类号： H01L21/67028 , B08B7/0057 , H01L21/67115 , H01L21/6719
摘要： A method for cleaning a substrate processing chamber, including processing a batch of substrates within a processing chamber defining one or more processing regions. Processing the batch of substrates may be executed in a sub-routine having various sub-steps including processing a substrate from the batch within the processing chamber, removing the substrate from the processing chamber, introducing ozone into the processing chamber, and exposing the chamber to ultraviolet light for less than one minute. The substrate batch processing sub-steps may be repeated until the last substrate in the batch is processed. After processing the last substrate in the batch, the method includes removing the last substrate from the processing chamber, introducing ozone into the processing chamber; and exposing the processing chamber to ultraviolet light for three to fifteen minutes.
摘要翻译：一种用于清洁衬底处理室的方法，包括在限定一个或多个处理区域的处理室内处理一批衬底。处理批次的基板可以在具有各种子步骤的子程序中执行，该子程序包括在处理室内处理来自批料的基板，从处理室移除基板，将臭氧引入处理室，并将该室暴露于紫外线不到一分钟。可以重复基底批处理子步骤，直到处理批次中的最后一个基底。在批次处理最后一个基板之后，该方法包括从处理室移除最后的基板，将臭氧引入处理室; 并将处理室暴露于紫外光下3至15分钟。

89. 发明授权

US06868856B2 Enhanced remote plasma cleaning 失效
标题翻译：增强远程等离子清洗
公开(公告)号：US06868856B2
公开(公告)日：2005-03-22
申请号：US09905515
申请日：2001-07-13
申请人： Thomas Nowak , Ian Latchford , Tsutomu Tanaka , Bok Heon Kim , Ping Xu , Jason Foster , Heath B. DeShong , Martin Seamons
发明人： Thomas Nowak , Ian Latchford , Tsutomu Tanaka , Bok Heon Kim , Ping Xu , Jason Foster , Heath B. DeShong , Martin Seamons
IPC分类号： B08B7/00 , C23C16/44 , C23C16/52 , H01J37/32 , B08B6/00 , H01L21/306
CPC分类号： H01J37/32862 , B08B7/00 , C23C16/4405 , C23C16/52 , Y10S134/902
摘要： Methods and apparatus for cleaning semiconductor processing equipment. The apparatus include both local and remote gas dissociators coupled to a semiconductor processing chamber to be cleaned. The methods include introducing a precursor gas into the remote dissociator where the gas is dissociated and introducing a portion of the dissociated gas into the chamber. Another portion of the dissociated gas which re-associates before introduction into the chamber is also introduced into the chamber where it is again dissociated. The dissociated gas combines with contaminants in the chamber and is exhausted from the chamber along with the contaminants.
摘要翻译：半导体加工设备清洗方法及装置。该装置包括耦合到待清洁的半导体处理室的局部和远程气体离解器。所述方法包括将前体气体引入到远离解离器中，其中气体被解离并将一部分解离的气体引入室中。在引入室之前重新结合的解离气体的另一部分也被引入室中，在那里再次解离。解离的气体与室内的污染物结合，并与污染物一起从室中排出。

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