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81. 发明授权

US06894245B2 Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression 有权
标题翻译： Merie等离子体反应器，其具有用电弧抑制调谐到等离子体的架空RF电极
公开(公告)号：US06894245B2
公开(公告)日：2005-05-17
申请号：US10007367
申请日：2001-10-22
申请人： Daniel J. Hoffman , Yan Ye , Dan Katz , Douglas A. Buchberger, Jr. , Xiaoye Zhao , Kang-Lie Chiang , Robert B. Hagen , Matthew L. Miller
发明人： Daniel J. Hoffman , Yan Ye , Dan Katz , Douglas A. Buchberger, Jr. , Xiaoye Zhao , Kang-Lie Chiang , Robert B. Hagen , Matthew L. Miller
IPC分类号： H05H1/46 , H01J37/32 , H01L21/205 , H01L21/3065 , B23K10/00
CPC分类号： H01J37/3244 , H01J37/32082 , H01J37/32183 , H01J37/3266
摘要： A plasma reactor for processing a semiconductor workpiece, includes a reactor chamber having a chamber wall and containing a workpiece support for holding the semiconductor support, the electrode comprising a portion of the chamber wall, an RF power generator for supplying power at a frequency of the generator to the overhead electrode and capable of maintaining a plasma within the chamber at a desired plasma ion density level. The overhead electrode has a capacitance such that the overhead electrode and the plasma formed in the chamber at the desired plasma ion density resonate together at an electrode-plasma resonant frequency, the frequency of the generator being at least near the electrode-plasma resonant frequency. The reactor further includes a set of MERIE magnets surrounding the plasma process area overlying the wafer surface that produce a slowly circulating magnetic field which stirs the plasma to improve plasma ion density distribution uniformity.
摘要翻译：一种用于处理半导体工件的等离子体反应器，包括具有室壁并具有用于保持半导体支撑件的工件支撑件的反应室，所述电极包括室壁的一部分，RF发电机，用于以发电机到顶置电极并且能够将室内的等离子体保持在期望的等离子体离子密度水平。顶置电极具有这样的电容，使得在期望的等离子体离子密度下在室中形成的顶置电极和等离子体以电极 - 等离子体共振频率共振，发电机的频率至少接近电极 - 等离子体共振频率。反应器还包括围绕晶片表面的等离子体处理区域的一组MERIE磁体，其产生缓慢循环的磁场，其搅动等离子体以改善等离子体离子密度分布均匀性。

82. 发明授权

US06853141B2 Capacitively coupled plasma reactor with magnetic plasma control 有权
标题翻译：具有磁等离子体控制的电容耦合等离子体反应器
公开(公告)号：US06853141B2
公开(公告)日：2005-02-08
申请号：US10192271
申请日：2002-07-09
申请人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
发明人： Daniel J. Hoffman , Matthew L. Miller , Jang Gyoo Yang , Heeyeop Chae , Michael Barnes , Tetsuya Ishikawa , Yan Ye
IPC分类号： H05H1/46 , H01J27/16 , H01J37/08 , H01J37/32 , H01L21/3065 , H01J7/24
CPC分类号： H01J37/32091 , H01J37/3244 , H01J37/32623 , H01J37/3266
摘要： A plasma reactor includes a vacuum enclosure including a side wall and a ceiling defining a vacuum chamber, and a workpiece support within the chamber and facing the ceiling for supporting a planar workpiece, the workpiece support and the ceiling together defining a processing region between the workpiece support and the ceiling. Process gas inlets furnish a process gas into the chamber. A plasma source power electrode is connected to an RF power generator for capacitively coupling plasma source power into the chamber for maintaining a plasma within the chamber. The reactor further includes at least a first overhead solenoidal electromagnet adjacent the ceiling, the overhead solenoidal electromagnet, the ceiling, the sidewall and the workpiece support being located along a common axis of symmetry. A current source is connected to the first solenoidal electromagnet and furnishes a first electric current in the first solenoidal electromagnet whereby to generate within the chamber a magnetic field which is a function of the first electric current, the first electric current having a value such that the magnetic field increases uniformity of plasma ion density radial distribution about the axis of symmetry near a surface of the workpiece support.
摘要翻译：等离子体反应器包括真空外壳，其包括限定真空室的侧壁和顶板，以及腔室内的工件支撑件，并面向天花板以支撑平面工件，工件支撑件和天花板一起限定了工件之间的加工区域支持和天花板。工艺气体入口将工艺气体提供到腔室中。等离子体源功率电极连接到RF功率发生器，用于将等离子体源功率电容耦合到腔室中，以在腔室内维持等离子体。所述反应器还包括至少邻近所述天花板的顶部螺线管电磁体，所述架空螺线管电磁体，所述天花板，所述侧壁和所述工件支撑件沿着公共对称轴线定位。电流源连接到第一螺线管电磁体并且在第一螺线管电磁体中提供第一电流，从而在腔室内产生与第一电流有关的磁场，第一电流具有使得磁场增加等离子体离子密度在工件支撑表面附近的对称轴的径向分布的均匀性。

83. 发明授权

US06652712B2 Inductive antenna for a plasma reactor producing reduced fluorine dissociation 失效
标题翻译：用于等离子体反应器的感应天线，其产生降低的氟解离
公开(公告)号：US06652712B2
公开(公告)日：2003-11-25
申请号：US10028646
申请日：2001-12-19
申请人： Shiang-Bau Wang , Daniel J. Hoffman , Chunshi Cui , Yan Ye , Gerardo Delgadino , David McParland , Matthew L. Miller , Douglas A. Buchberger, Jr. , Steven C. Shannon
发明人： Shiang-Bau Wang , Daniel J. Hoffman , Chunshi Cui , Yan Ye , Gerardo Delgadino , David McParland , Matthew L. Miller , Douglas A. Buchberger, Jr. , Steven C. Shannon
IPC分类号： C23C1600
CPC分类号： H01J37/321
摘要： An inductive antenna of a plasma reactor for processing a semiconductor wafer is connected to a radio frequency (RF) power source, and consists of a conductor arranged in successive loops that wind in opposing directions, adjacent pairs of the successive loops having facing portions in which current flow is parallel, the facing portions being sufficiently close to at least nearly share a common current path, whereby to form transitions across the facing portions between opposing magnetic polarizations.
摘要翻译：用于处理半导体晶片的等离子体反应器的感应天线连接到射频（RF）电源，并且由布置在相反方向上的连续回路中的导体组成，相邻的一对连续的回路具有面对部分电流流动是平行的，面对部分足够接近至少几乎共享公共电流路径，从而在相对的磁极化之间跨越相对部分形成过渡。

84. 发明授权

US09685186B2 HDD pattern implant system 有权
公开(公告)号：US09685186B2
公开(公告)日：2017-06-20
申请号：US12703897
申请日：2010-02-11
申请人： Majeed A. Foad , Jacob Newman , Jose Antonio Marin , Daniel J. Hoffman , Stephen Moffatt , Steven Verhaverbeke
发明人： Majeed A. Foad , Jacob Newman , Jose Antonio Marin , Daniel J. Hoffman , Stephen Moffatt , Steven Verhaverbeke
IPC分类号： G11B5/85 , C23C16/00 , G11B5/82 , C23F1/00 , H01L21/673 , G11B5/84 , H01L21/677 , G11B5/855 , C23C14/48 , H01L21/687 , C23C14/50
CPC分类号： G11B5/82 , C23C14/48 , C23C14/50 , C23C16/00 , C23F1/00 , G11B5/84 , G11B5/855 , H01L21/673 , H01L21/677 , H01L21/687
摘要： Methods and apparatus for forming substrates having magnetically patterned surfaces is provided. A magnetic layer comprising one or more materials having magnetic properties is formed on a substrate. The magnetic layer is subjected to a patterning process in which selected portions of the surface of the magnetic layer are altered such that the altered portions have different magnetic properties from the non-altered portions without changing the topography of the substrate. A protective layer and a lubricant layer are deposited over the patterned magnetic layer. The patterning is accomplished through a number of processes that expose substrates to energy of varying forms. Apparatus and methods disclosed herein enable processing of two major surfaces of a substrate simultaneously, or sequentially by flipping. In some embodiments, magnetic properties of the substrate surface may be uniformly altered by plasma exposure and then selectively restored by exposure to patterned energy.

85. 发明授权

US09435029B2 Wafer chucking system for advanced plasma ion energy processing systems 有权
标题翻译：用于先进等离子体离子能量处理系统的晶片夹紧系统
公开(公告)号：US09435029B2
公开(公告)日：2016-09-06
申请号：US13193299
申请日：2011-07-28
申请人： Victor Brouk , Daniel J. Hoffman
发明人： Victor Brouk , Daniel J. Hoffman
IPC分类号： H01J37/32 , C23C16/50 , C23C14/34
CPC分类号： C23C16/50 , C23C14/345 , H01J37/32009 , H01J37/32082 , H01J37/32174 , H01J37/32935 , H01J37/3299
摘要： Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a desired distribution of energies of ions at the surface of the substrate so as to effectuate the desired distribution of ion energies on a time-averaged basis.
摘要翻译：公开了用于调节等离子体室中的离子能并将衬底夹持到衬底支撑件的系统，方法和装置。一种示例性方法包括将衬底放置在等离子体室中，在等离子体室中形成等离子体，可控制地将功率切换到衬底，以便向衬底施加周期性电压功能，并且在周期性电压函数的多个周期内调制，所述周期性电压功能响应于所述衬底表面处的离子能量的期望分布，以便以时间平均的方式实现所需的离子能量分布。

86. 发明申请

US20140062303A1 SYSTEMS AND METHODS FOR CALIBRATING A SWITCHED MODE ION ENERGY DISTRIBUTION SYSTEM 有权
标题翻译：用于校准切换模式离子能量分配系统的系统和方法
公开(公告)号：US20140062303A1
公开(公告)日：2014-03-06
申请号：US13597032
申请日：2012-08-28
申请人： Daniel J. Hoffman , Daniel Carter , Victor Brouk , William J. Hattel
发明人： Daniel J. Hoffman , Daniel Carter , Victor Brouk , William J. Hattel
IPC分类号： H05H1/46
CPC分类号： H05H1/46 , C23C14/345 , H01J37/32082 , H01J37/32422 , H01J37/32706 , H01J37/32926 , H01J37/32935 , H01J37/3299 , H05H1/0081
摘要： Systems, methods and apparatus for regulating ion energies and ion energy distributions along with calibrating a bias source and a plasma processing chamber are disclosed. An exemplary method includes applying a periodic voltage function to a load emulator, which emulates electrical characteristics of a plasma load and associated electronics such as an e-chuck. The load emulator can be measured for various electrical parameters and compared to expected parameters generated by the bias source. Differences between measured and expected values can be used to identify and correct faults and abnormalities in the bias supply, the chamber, or a power source used to ignite and sustain the plasma. Once the bias supply is calibrated, the chamber can be calibrated by measuring and calculating an effective capacitance comprising a series and parallel capacitance of the substrate support and optionally the substrate.
摘要翻译：公开了用于调节离子能量和离子能量分布以及校准偏压源和等离子体处理室的系统，方法和装置。一种示例性方法包括将周期性电压函数应用于负载仿真器，负载仿真器模拟等离子体负载的电特性和相关联的电子设备例如电动卡盘。可以测量负载仿真器的各种电气参数，并与偏置源产生的预期参数进行比较。测量值和预期值之间的差异可用于识别和纠正偏置电源，腔室或用于点燃和维持等离子体的电源的故障和异常。一旦偏置电源被校准，可以通过测量和计算包括衬底支撑件和任选的衬底的串联和并联电容的有效电容来校准腔室。

87. 发明授权

US08563428B2 Methods for depositing metal in high aspect ratio features 有权
标题翻译：在高宽比特征中沉积金属的方法
公开(公告)号：US08563428B2
公开(公告)日：2013-10-22
申请号：US13223788
申请日：2011-09-01
申请人： Karl Brown , Alan Ritchie , John Pipitone , Ying Rui , Daniel J. Hoffman
发明人： Karl Brown , Alan Ritchie , John Pipitone , Ying Rui , Daniel J. Hoffman
IPC分类号： H01L21/44
CPC分类号： C23C14/046 , C23C14/185 , C23C14/3492
摘要： Methods of depositing metal in high aspect ratio features are provided herein. In some embodiments, a method of processing a substrate includes applying RF power at VHF frequency to a target comprising metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas, sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms, depositing the ionized metal atoms on a bottom surface of the opening and on a first surface of the substrate, applying a first RF power to redistribute at least some of the deposited metal atoms from the bottom surface and upper surface to sidewalls of the opening, and repeating the deposition the redistribution processes until a first layer of metal is deposited on substantially all surfaces of the opening.
摘要翻译：本文提供了以高纵横比特征沉积金属的方法。在一些实施例中，处理衬底的方法包括以VHF频率将RF功率施加到包括设置在衬底上的PVD室中的金属的靶以形成来自等离子体形成气体的等离子体，使用等离子体溅射来自靶的金属原子同时保持PVD室中的第一压力足以电离溅射的金属原子的主要部分，将离子化的金属原子沉积在开口的底表面上并在衬底的第一表面上，施加第一RF功率以在至少一些沉积的金属原子从开口的底表面和上表面到侧壁，并且重新沉积重新分布过程，直到第一金属层沉积在开口的基本上所有的表面上。

88. 发明申请

US20120217221A1 SYSTEM, METHOD AND APPARATUS FOR CONTROLLING ION ENERGY DISTRIBUTION OF A PROJECTED PLASMA 有权
标题翻译：用于控制投影等离子体的能量分配的系统，方法和装置
公开(公告)号：US20120217221A1
公开(公告)日：2012-08-30
申请号：US13193345
申请日：2011-07-28
申请人： Daniel J. Hoffman , Victor Brouk , Daniel Carter
发明人： Daniel J. Hoffman , Victor Brouk , Daniel Carter
IPC分类号： B44C1/22 , B05C11/00 , B05C9/00 , C23C16/52 , C23C16/50
CPC分类号： C23C16/50 , C23C14/345 , H01J37/32009 , H01J37/32082 , H01J37/32174 , H01J37/32935 , H01J37/3299
摘要： Systems, methods and apparatus for regulating ion energies in a plasma chamber are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber via a remotely generated ionizing electromagnetic field that extends into the plasma chamber from a remote projected source, controllably switching power to the substrate so as to apply a periodic voltage function to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a desired distribution of energies of ions at the surface of the substrate so as to effectuate the desired distribution of ion energies on a time-averaged basis.
摘要翻译：公开了用于调节等离子体室中的离子能量的系统，方法和装置。一种示例性方法包括将基板放置在等离子体室中，通过远程产生的电离电磁场在等离子体室中形成等离子体，该离子化电磁场从远程投影源延伸到等离子体室中，可控制地将功率切换到基板，以便施加周期性电压功能到基板，并且在周期性电压函数的多个周期中调制周期性电压函数，其响应于衬底表面处的离子能量的期望分布，以便在一段时间内实现所需的离子能量分布依据。

89. 发明申请

US20120052599A1 Wafer Chucking System for Advanced Plasma Ion Energy Processing Systems 有权
标题翻译：用于先进等离子体离子能量处理系统的晶圆卡盘系统
公开(公告)号：US20120052599A1
公开(公告)日：2012-03-01
申请号：US13193299
申请日：2011-07-28
申请人： Victor Brouk , Daniel J. Hoffman
发明人： Victor Brouk , Daniel J. Hoffman
IPC分类号： H01L21/66 , B05C11/00 , H01L21/3065
CPC分类号： C23C16/50 , C23C14/345 , H01J37/32009 , H01J37/32082 , H01J37/32174 , H01J37/32935 , H01J37/3299
摘要： Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a desired distribution of energies of ions at the surface of the substrate so as to effectuate the desired distribution of ion energies on a time-averaged basis.
摘要翻译：公开了用于调节等离子体室中的离子能并将衬底夹持到衬底支撑件的系统，方法和装置。一种示例性方法包括将衬底放置在等离子体室中，在等离子体室中形成等离子体，可控制地将功率切换到衬底，以便向衬底施加周期性电压功能，并且在周期性电压函数的多个周期内调制，所述周期性电压功能响应于所述衬底表面处的离子能量的期望分布，以便以时间平均的方式实现所需的离子能量分布。

90. 发明授权

US08048328B2 Method for shaping a magnetic field in a magnetic field-enhanced plasma reactor 失效
公开(公告)号：US08048328B2
公开(公告)日：2011-11-01
申请号：US11612102
申请日：2006-12-18
申请人： Roger A. Lindley , Scott A. Hogenson , Daniel J. Hoffman
发明人： Roger A. Lindley , Scott A. Hogenson , Daniel J. Hoffman
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/306
CPC分类号： H01J37/3266 , H01J37/32623 , H01J37/32688
摘要： Methods for rotating a magnetic field in a process chamber is provided herein. In one embodiment, a method for rotating a magnetic field in a process chamber includes forming a magnetic field having a primary shape; changing the primary shape to at least two sequential transitional shapes; and changing the transitional shape to a rotated primary shape. Optionally, the magnetic field may be maintained at an approximately constant magnitude throughout each step. Optionally, a maximum of one current applied to one or more magnetic field producing coils is equal to zero or has its polarity reversed between any two adjacent steps.

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