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81. 发明授权

US06676264B1 Laser beam focusing apparatus and method for focusing a laser beam 失效
标题翻译：用于聚焦激光束的激光束聚焦装置和方法
公开(公告)号：US06676264B1
公开(公告)日：2004-01-13
申请号：US10224385
申请日：2002-08-21
申请人： Kunioki Mima , Ryosuke Kodama , Tatsuhiko Yamanaka , Yoneyoshi Kitagawa , Kazuo Tanaka , Yasuhiko Sentoku
发明人： Kunioki Mima , Ryosuke Kodama , Tatsuhiko Yamanaka , Yoneyoshi Kitagawa , Kazuo Tanaka , Yasuhiko Sentoku
IPC分类号： G02B510
CPC分类号： G02B27/0994 , G02B6/10 , G02B19/0019 , G02B19/0023 , G02B19/0033
摘要： A hollow tube having a pair of openings which have their respective different diameters and are opposed each other is prepared. Then, a pulsed laser beam is introduced into the hollow tube from the larger opening thereof and then, reflected multiply on the inner wall surface of the hollow tube. The introduced pulsed laser beam is focused during the traveling for the smaller opening of the hollow tube to generate a focused laser beam. The thus obtained focused laser beam is output from the smaller opening of the hollow tube.
摘要翻译：准备具有一对开口的具有各自不同直径并彼此相对的中空管。然后，从其较大的开口将脉冲激光束引入中空管，然后在中空管的内壁表面上反射。引入的脉冲激光束在行进过程中聚焦于中空管的较小开口以产生聚焦的激光束。由此获得的聚焦激光束从中空管的较小开口输出。

82. 发明授权

US06534864B1 Semiconductor memory device and method of fabricating the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US06534864B1
公开(公告)日：2003-03-18
申请号：US09428821
申请日：1999-10-28
申请人： Kazuo Tanaka , Takashi Kumagai , Junichi Karasawa , Kunio Watanabe
发明人： Kazuo Tanaka , Takashi Kumagai , Junichi Karasawa , Kunio Watanabe
IPC分类号： H01L2348
CPC分类号： H01L27/11 , H01L27/1104 , Y10S257/903
摘要： A semiconductor memory device (SRAM) comprises memory cells, each of which includes two load transistors, two driver transistors and two transfer transistors. The SRAM cell includes a semiconductor substrate in which the transistors are formed, a first interlayer dielectric formed on the semiconductor substrate, first contact portions formed in the first interlayer dielectric and first wiring layers (node wiring layers and pad layers) formed on the first interlayer dielectric. The first contact portions and the first wiring layers include metal layers made of refractory metal and a refractory metal nitride layers. This semiconductor memory device of the present invention is capable of enhancing an integration degree of wiring layers and achieving a microfabrication.
摘要翻译：半导体存储器件（SRAM）包括存储单元，每个存储单元包括两个负载晶体管，两个驱动晶体管和两个转移晶体管。 SRAM单元包括其中形成晶体管的半导体衬底，形成在半导体衬底上的第一层间电介质，形成在第一层间电介质中的第一接触部分和形成在第一层间电介质上的第一布线层（节点布线层和衬垫层）电介质。第一接触部分和第一布线层包括由难熔金属制成的金属层和难熔金属氮化物层。本发明的半导体存储器件能够提高布线层的集成度并实现微细加工。

83. 发明授权

US06232670B1 Semiconductor memory device and method of fabricating the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US06232670B1
公开(公告)日：2001-05-15
申请号：US09361043
申请日：1999-07-26
申请人： Takashi Kumagai , Junichi Karasawa , Kazuo Tanaka , Kunio Watanabe
发明人： Takashi Kumagai , Junichi Karasawa , Kazuo Tanaka , Kunio Watanabe
IPC分类号： H01L2711
CPC分类号： H01L27/1104
摘要： First and second memory cells of an SRAM comprises first, second, and third conductive layers. The first conductive layer is a gate electrode for a first load transistor and a first driver transistor. The second conductive layer diverges from the first conductive layer on a field oxide region and is electrically connected to a second driver transistor active region. The third conductive layer is a gate electrode for a second load transistor and a second driver transistor. The third conductive layer is electrically connected to a first load transistor active region. The pattern of the first, second, and third conductive layers of the second memory cell is a rotated pattern of the first, second, and third conductive layers in the first memory cell at an angle of 180 degrees around an axis perpendicular to the main surface of a semiconductor substrate.
摘要翻译： SRAM的第一和第二存储单元包括第一，第二和第三导电层。第一导电层是用于第一负载晶体管和第一驱动晶体管的栅电极。第二导电层从场氧化物区域上的第一导电层发散，并且电连接到第二驱动器晶体管有源区。第三导电层是用于第二负载晶体管的栅电极和第二驱动晶体管。第三导电层电连接到第一负载晶体管有源区。第二存储单元的第一，第二和第三导电层的图案是第一存储单元中的第一，第二和第三导电层的旋转图案，围绕垂直于主表面的轴以180度的角度的半导体衬底。

84. 发明授权

US06205156B1 Method and device for data transmission and reception using transmission pause state as reception timing 失效
标题翻译：使用传输暂停状态作为接收定时的数据发送和接收的方法和装置
公开(公告)号：US06205156B1
公开(公告)日：2001-03-20
申请号：US08949377
申请日：1997-10-14
申请人： Tomoki Watanabe , Hironobu Fukunaga , Keiko Kumagai , Kazuhiro Hayakawa , Tatsuo Suzuki , Katsumi Kishida , Kazuo Tanaka
发明人： Tomoki Watanabe , Hironobu Fukunaga , Keiko Kumagai , Kazuhiro Hayakawa , Tatsuo Suzuki , Katsumi Kishida , Kazuo Tanaka
IPC分类号： H04L12413
CPC分类号： H04M11/085 , H04L29/06 , H04L29/06027 , H04L69/08
摘要： A data transmission and reception scheme capable of reducing required devices in the data transmission and reception system for an economical advantage, realizing the concurrent data delivery to a plurality of data reception devices, and allowing each one of a plurality of data reception devices to start the data reception at arbitrary timing. In a system for transmitting data from a data transmission device to unspecified many data reception devices that make asynchronous connections, the data transmission device carries out the repetitive transmission by repeating the operations of transmitting a prescribed amount of data to be transmitted by applying a prescribed signal conversion and then pausing the signal conversion processing for a prescribed period of time so as to provide a transmission pause state in the transmission signals which is to be utilized as a reception timing at each data repcetion device. At each data reception device, the transmission pause state in the transmission signals are detected at an arbitrary timing, and the reception of the transmission data is started by using the detected transmission pause state as the reception timing.
摘要翻译：一种数据发送和接收方案，其能够以经济的方式减少数据发送和接收系统中的所需设备，实现向多个数据接收设备的并发数据传送，并允许多个数据接收设备中的每一个启动数据接收任意时间。在从数据发送装置发送数据到未指定进行异步连接的多个数据接收装置的系统中，数据发送装置通过应用规定的信号重复发送规定数量的要发送的数据的动作来进行重复发送转换，然后在规定的时间段内暂停信号转换处理，以便在要用作每个数据记录装置的接收定时的发送信号中提供发送暂停状态。在每个数据接收装置处，在任意定时检测发送信号中的发送暂停状态，并且通过使用检测到的发送暂停状态作为接收定时来开始发送数据的接收。

85. 发明授权

US06187964B1 Method of producing phenol compound 有权
标题翻译：生产酚类化合物的方法
公开(公告)号：US06187964B1
公开(公告)日：2001-02-13
申请号：US09353311
申请日：1999-07-14
申请人： Kazuo Tanaka , Yukio Sakai , Yasuhiro Shoji , Takafumi Yoshimura , Masatoshi Yoshimura
发明人： Kazuo Tanaka , Yukio Sakai , Yasuhiro Shoji , Takafumi Yoshimura , Masatoshi Yoshimura
IPC分类号： C07C3700
CPC分类号： C07C51/255 , C07C37/0555 , C07C51/285 , C07C67/39 , C07C67/54 , C07C63/04 , C07C69/017 , C07C69/07 , C07C39/07
摘要： A method of producing a phenol compound comprising a step of oxidizing an aromatic aldehyde to an aryl formate and an aromatic carboxylic acid with an oxygen-containing gas, and a step of decomposing the aryl formate to the phenol compound. To facilitate the separation of the aryl formate and the unreacted aromatic aldehyde, a mixture of the aryl formate and the unreacted aromatic aldehyde is recycled to the oxidation process to concentrate the aryl formate in the oxidation mixture. Alternatively, the oxidation process is carried out in an organic solvent having substantially no ability of dissolving water to increase the conversion of the aromatic aldehyde and the selectivity of the aryl formate, thereby producing the aryl formate in a high yield. In another method, the aryl formate is produced by oxidizing the aromatic aldehyde in the organic solvent having substantially no ability of dissolving water with performic acid generated in situ in the reaction system from the reaction between formic acid and hydrogen peroxide. Since the oxidation proceeds in the organic solvent, hydrogen peroxide in aqueous phase contact the aromatic aldehyde. This significantly reduces the amount of explosive cyclic perther and a high-boiling product.
摘要翻译：一种生产酚化合物的方法，包括用含氧气体将芳族醛氧化为芳基甲酸酯和芳族羧酸的步骤，以及将芳基甲酸酯分解成酚化合物的步骤。为了促进甲酸芳基酯和未反应的芳族醛的分离，将甲酸芳基酯和未反应的芳族醛的混合物循环到氧化过程中以将甲酸芳基酯浓缩在氧化混合物中。或者，氧化方法在基本上没有溶解水的能力的有机溶剂中进行，以增加芳族醛的转化率和甲酸芳基酯的选择性，从而以高产率生产甲酸芳基酯。在另一种方法中，通过氧化芳族醛在有机溶剂中氧化芳族醛，通过在反应体系中原位产生的甲酸与甲酸和过氧化氢之间的反应基本上不溶解水的能力来进行氧化。由于在有机溶剂中进行氧化，水相中的过氧化氢与芳族醛接触。这显着地减少了爆炸性环状花药和高沸点产物的量。

86. 发明授权

US6160816A Subscriber-line transmission apparatus 失效
标题翻译：用户线路传输设备
公开(公告)号：US6160816A
公开(公告)日：2000-12-12
申请号：US902277
申请日：1997-07-29
申请人： Kazuo Tanaka , Eiji Shimose
发明人： Kazuo Tanaka , Eiji Shimose
IPC分类号： H04J3/00 , H04J3/06 , H04J3/07 , H04J3/12 , H04Q3/42 , H04Q11/04
CPC分类号： H04J3/07 , H04J3/0685 , H04J3/12 , H04Q11/0471 , H04Q2213/13103 , H04Q2213/13214
摘要： A first group of asynchronous clock converters effect the conversion between a DNE clock and an RDT clock to which DS-0 data and signalling data are synchronized, for the data items which are transferred between a cross-connector and a DNE. A second group of asynchronous clock converters effect the conversion between a CPE clock and the RDT clock to which DS-0 data and signalling data are synchronized, for the data items which are transferred between the cross-connector and a CPE. As a result, cross-connect processes based on the single RDT clock are realized, and loop timings are guaranteed for the DNE and the CPE.
摘要翻译：第一组异步时钟转换器对于在交叉连接器和DNE之间传输的数据项，会影响DNE时钟与DS-0数据和信令数据同步的RDT时钟之间的转换。第二组异步时钟转换器影响在交叉连接器和CPE之间传输的数据项之间的CPE时钟与DS-0数据和信号数据同步的RDT时钟之间的转换。因此，实现了基于单个RDT时钟的交叉连接过程，并为DNE和CPE保证了循环定时。

87. 发明授权

US6065362A Sealed-type wave gear device 失效
标题翻译：密封型波轮装置
公开(公告)号：US6065362A
公开(公告)日：2000-05-23
申请号：US907878
申请日：1997-08-11
申请人： Yoshihide Kiyosawa , Kazuo Tanaka
发明人： Yoshihide Kiyosawa , Kazuo Tanaka
IPC分类号： F16H1/32 , F16H49/00
CPC分类号： F16H49/001 , Y10T74/19963
摘要： A sealed-type wave gear device 1 has a sealed space 13 formed by a device housing 2, first and second end plates 3 and 4 placed in openings at both the ends thereof, a hollow Input shaft 5, and first to fourth seals (8, 9, 11, 12) for sealing these members. A flat wave gear mechanism 20 is accommodated in the sealed space 13, which comprises a rigid internal gear 210, a silk-hat-shaped flexible external gear 220 inside the rigid internal gear 210, and a wave generator 230 fixed inside the flexible external gear 220. A lubricant in the wave gear mechanism 20 is completely prevented from leaking outside. Only the device housing 2, the first and second end plates 3 and 4, and both the ends of the input shaft 5 which are exposed outside need to be protected from rusting. The wave gear device 1 is suitable for being used as a speed reduction unit of a driving mechanism employed in a clean room.
摘要翻译：密封式波轮装置1具有由装置壳体2形成的密封空间13，在其两端设置有开口的第一和第二端板3和4，中空的输入轴5和第一至第四密封件（8），9,11,12），用于密封这些构件。平坦波齿轮机构20容纳在密封空间13中，密封空间13包括刚性内齿轮210，刚性内齿轮210内的丝帽状柔性外齿轮220和固定在柔性外齿轮内的波发生器230 波轮齿轮机构20中的润滑剂被完全防止泄漏到外部。只有设备壳体2，第一和第二端板3和4以及输入轴5的暴露在外部的两端需要被保护以防止生锈。波轮装置1适用于作为洁净室使用的驱动机构的减速单元。

88. 发明授权

US6063938A Process for producing .epsilon.-caprolactone 失效
标题翻译：生产ε-己内酯的方法
公开(公告)号：US6063938A
公开(公告)日：2000-05-16
申请号：US900875
申请日：1997-07-25
申请人： Kazuo Tanaka , Kengi Nakaya , Atsushi Ohkoshi , Hideaki Fujita
发明人： Kazuo Tanaka , Kengi Nakaya , Atsushi Ohkoshi , Hideaki Fujita
IPC分类号： C07D315/00 , C07D309/00
CPC分类号： C07D315/00
摘要： Disclosed is a process for producing .epsilon.-caprolactone which comprises distilling a reaction mixture obtained by oxidation of cyclohexanone to separate impurities, wherein .epsilon.-caprolactone separated in a rectifying column is contacted with an oxygen-containing gas and then distilled. Thereby, a high quality of .epsilon.-caprolactone of in which no coloration occurs during long time preservation can be produced by industrial advantages.
摘要翻译：公开了一种生产ε-己内酯的方法，其包括将通过环己酮氧化获得的反应混合物蒸馏到分离的杂质中，其中在精馏塔中分离的ε-己内酯与含氧气体接触，然后蒸馏。因此，通过工业上的优点，可以制造长时间保存时不发生着色的高品质的ε-己内酯。

89. 发明授权

US5841414A Liquid crystal display device 失效
标题翻译：液晶显示装置
公开(公告)号：US5841414A
公开(公告)日：1998-11-24
申请号：US888277
申请日：1997-07-03
申请人： Kazuo Tanaka
发明人： Kazuo Tanaka
IPC分类号： G02F1/13 , G09G3/36 , H05K1/14 , H05K3/00 , H05K3/36
CPC分类号： G09G3/3611 , G02F1/13452 , H05K1/14 , H05K3/361 , H05K3/4691
摘要： A constitution of a liquid crystal display apparatus, which has a reduced total size thereof while maintaining the necessary size of a liquid crystal display panel, is provided. A liquid crystal display apparatus 1 comprising a liquid crystal display panel 2, a plurality of drive circuit substrates 3, 4-1, 4-2 for the liquid crystal display panel 2 and a control circuit substrate 5, wherein the first drive circuit substrate 3 as at least a part of said drive circuit substrate 1 is connected to the liquid crystal display panel 2 via a flexible connection wiring portion 30, second drive circuit substrates 4-1, 4-2, as the remaining drive circuit substrate are connected fixedly to the liquid crystal display panel 2, the second drive circuit substrates 4-1, 4-2 being provided with flexible connection wiring portions 61, 62, one end portion E of each of the flexible connection wiring portions 61, 62 are provided with connector inserting means 63, 64, and the control circuit substrate 5 is provided with input/output connector means 51, 52 which are engaged with the connector inserting means 63, 64 for connection purposes.
摘要翻译：提供了一种在保持液晶显示面板的必要尺寸的同时具有减小的总体尺寸的液晶显示装置的结构。一种液晶显示装置1，包括液晶显示面板2，用于液晶显示面板2的多个驱动电路基板3，4-1,4-2和控制电路基板5，其中第一驱动电路基板3 当所述驱动电路基板1的至少一部分经由柔性连接配线部30与液晶显示面板2连接时，作为剩余驱动电路基板的第二驱动电路基板4-1,4-2固定地连接到液晶显示面板2，第二驱动电路基板4-1,4-2设置有柔性连接配线部61,62，柔性连接配线部61,62的一个端部E设置有连接器插入装置63,64，并且控制电路基板5设置有用于连接目的与连接器插入装置63,64接合的输入/输出连接器装置51,52。

90. 发明授权

US5641983A Semiconductor device having a gate electrode having a low dopant concentration 失效
标题翻译：具有具有低掺杂浓度的栅电极的半导体器件
公开(公告)号：US5641983A
公开(公告)日：1997-06-24
申请号：US548380
申请日：1995-10-26
申请人： Juri Kato , Kazuo Tanaka
发明人： Juri Kato , Kazuo Tanaka
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/8238 , H01L23/52 , H01L27/04 , H01L27/092 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/78 , H01L29/76 , H01L23/48 , H01L29/94 , H01L31/062
CPC分类号： H01L21/823835 , H01L29/4933 , H01L29/4983 , H01L2924/0002
摘要： In a CMOS-element-containing semiconductor device, the CMOS element comprises: a silicon substrate; an n-channel MOS element formed on the silicon substrate and including an n-type source/drain region, a gate oxide film and a gate electrode; a p-channel MOS element formed on the silicon substrate and including a p-type source/drain region, a gate oxide film and a gate electrode; and a gate wiring layer electrically interconnecting the gate electrode of the n-channel MOS element and the gate electrode of the p-channel MOS element with one another. At least one of the gate electrodes and the gate wiring layer include at least in part a metal silicide layer. The gate electrodes and the gate wiring layer contain impurities consisting of at least one of a III group dopant and a V group dopant in a total concentration of at most 3.times.10.sup.20 atoms cm.sup.-3.
摘要翻译：在含CMOS元件的半导体器件中，CMOS元件包括：硅衬底; 形成在硅衬底上并包括n型源极/漏极区，栅极氧化膜和栅电极的n沟道MOS元件; 形成在硅衬底上并包括p型源极/漏极区，栅极氧化膜和栅电极的p沟道MOS元件; 以及将n沟道MOS元件的栅电极和p沟道MOS元件的栅电极彼此电连接的栅极布线层。栅极电极和栅极布线层中的至少一个至少部分地包括金属硅化物层。栅极电极和栅极布线层含有总量最多为3×1020原子cm -3的由III族掺杂剂和V族掺杂剂中的至少一种构成的杂质。

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