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81. 发明申请

US20090322183A1 INERTIAL SENSOR AND INERTIAL DETECTING DEVICE 审中-公开
标题翻译：惯性传感器和惯性检测装置
公开(公告)号：US20090322183A1
公开(公告)日：2009-12-31
申请号：US12488691
申请日：2009-06-22
申请人： Takashi Kawakubo , Toshihiko Nagano , Michihiko Nishigaki
发明人： Takashi Kawakubo , Toshihiko Nagano , Michihiko Nishigaki
IPC分类号： G01P15/09
CPC分类号： G01P15/09 , G01C19/5621 , G01C19/5628 , G01C19/5656 , G01P15/0922 , G01P15/18 , G01P2015/0817 , G01P2015/0828
摘要： An inertial sensor includes a first beam, a first proof mass section and a first upper surface stopper section. The first beam extends in a first direction in a plane parallel to a major surface of a substrate and is held with a spacing from the major surface of the substrate. The first beam has a first detecting section including a first upper side electrode, a first lower side electrode, and a first upper side piezoelectric film provided between the first upper side electrode and the first lower side electrode. The first beam has one end connected to the major surface of the substrate. The first proof mass section is connected to the other end of the first beam and held with a spacing from the major surface of the substrate. The first upper surface stopper section is provided on the opposite side of the first proof mass section from the substrate with a spacing from the first proof mass section.
摘要翻译：惯性传感器包括第一光束，第一检测质量部分和第一上表面阻挡部分。第一光束在与基板的主表面平行的平面中沿第一方向延伸，并且与基板的主表面保持间隔。第一光束具有包括设置在第一上侧电极和第一下侧电极之间的第一上侧电极，第一下侧电极和第一上侧压电膜的第一检测部。第一光束的一端连接到基板的主表面。第一检测质量部分连接到第一光束的另一端并且与衬底的主表面间隔保持。第一上表面止动部分设置在第一检验质量部分的与第一检验质量部分间隔开的基板的相对侧上。

82. 发明申请

US20090189487A1 ACTUATOR AND ELECTRONIC HARDWARE USING THE SAME 失效
标题翻译：使用其的执行器和电子硬件
公开(公告)号：US20090189487A1
公开(公告)日：2009-07-30
申请号：US12354182
申请日：2009-01-15
申请人： Michihiko Nishigaki , Toshihiko Nagano , Kazuhiko Itaya , Takashi Kawakubo
发明人： Michihiko Nishigaki , Toshihiko Nagano , Kazuhiko Itaya , Takashi Kawakubo
IPC分类号： H02N2/00
CPC分类号： H01H57/00 , B81B3/0021 , B81B2201/032 , H01G5/18 , H01H2057/006 , H01L41/094 , H01L41/0973
摘要： An actuator includes a first beam, a first fixed part, a second beam, a first connective part, and a first fixed electrode. The first beam extends from a first fixed end to a first connective end, and the first fixed part connects the first fixed end and the substrate and supports the first beam above a main surface of the substrate with a gap. The second beam extends from a second connective end to a first action end and is provided in parallel to the first beam, and has a first division part divided by a first slit extending from the first action end toward the second connective end. The first connective part connects the first connective end and the second connective end and holds the second beam above the main surface of the substrate with a gap. The first fixed electrode is provided on the main surface of the substrate being configured to be opposed to a part of the first division part on a side of the first action end.
摘要翻译：致动器包括第一光束，第一固定部分，第二光束，第一连接部分和第一固定电极。第一光束从第一固定端延伸到第一连接端，并且第一固定部分连接第一固定端和衬底，并且将第一光束以间隙支撑在衬底的主表面上方。第二光束从第二连接端部延伸到第一动作端部并且平行于第一光束提供，并且具有由从第一动作端向第二连接端部延伸的第一狭缝分割的第一分割部分。第一连接部分连接第一连接端和第二连接端，并且将第二光束以间隙保持在基板的主表面上方。第一固定电极设置在基板的主表面上，该主表面被配置为与第一动作端侧的第一分割部分的一部分相对。

83. 发明申请

US20090135541A1 ACTUATOR AND ELECTRONIC CIRCUIT BASED THEREON 审中-公开
标题翻译：基于执行器和电子电路
公开(公告)号：US20090135541A1
公开(公告)日：2009-05-28
申请号：US12266245
申请日：2008-11-06
申请人： Takashi Kawakubo , Toshihiko Nagano , Michihiko Nishigaki
发明人： Takashi Kawakubo , Toshihiko Nagano , Michihiko Nishigaki
IPC分类号： H01G5/16 , H01L41/04
CPC分类号： H01G5/0136 , B81B3/0021 , H01G5/16 , H01L41/094 , H02N1/006
摘要： An actuator includes a substrate, a fixed electrode provided on a major surface of the substrate, a movable beam opposed to the major surface and held above the substrate with a gap thereto, and a dielectric film provided between the fixed electrode and the movable beam. The dielectric film is made of aluminum nitride oriented along c-axis with an orientation full width at half maximum of 4.6 degrees or less.
摘要翻译：致动器包括基板，设置在基板的主表面上的固定电极，与主表面相对并且与基板间隔开并保持在其上的可移动光束，以及设置在固定电极和可移动光束之间的电介质膜。电介质膜由沿着c轴取向的氮化铝制成，取向全宽度为半径为4.6度以下。

84. 发明申请

US20050104204A1 Wafer-level package and its manufacturing method 审中-公开
标题翻译：晶圆级封装及其制造方法
公开(公告)号：US20050104204A1
公开(公告)日：2005-05-19
申请号：US10951868
申请日：2004-09-29
申请人： Takashi Kawakubo , Takaaki Yasumoto , Kazuhiko Itaya
发明人： Takashi Kawakubo , Takaaki Yasumoto , Kazuhiko Itaya
IPC分类号： H01L23/12 , H01L21/48 , H01L21/60 , H01L23/055 , H01L23/14 , H01L23/498 , H01L25/065 , H01L25/07 , H01L25/18 , H03H3/02 , H03H9/02 , H03H9/10 , H03H9/17 , H01L23/34
CPC分类号： B81C1/00301 , B81B2207/096 , H01L21/486 , H01L23/055 , H01L23/147 , H01L23/49827 , H01L24/29 , H01L24/81 , H01L24/83 , H01L24/94 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/14051 , H01L2224/16 , H01L2224/16235 , H01L2224/81191 , H01L2224/81193 , H01L2224/81801 , H01L2224/83191 , H01L2224/838 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01033 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0781 , H01L2924/15313 , H01L2924/163 , H01L2924/19041 , H01L2924/19042 , H01L2924/30107 , H03H9/0547 , H03H9/105 , H01L2924/00014
摘要： A wafer-level package comprises: a first substrate; an electric element provided on the first substrate; a second substrate; an internal electrode pad; a well; and an external electrode pad. The second substrate is opposed to the first substrate with a predetermined gap therebetween. The electric element is provided between the first and second substrates. The internal electrode pad extends onto a first surface of one of the first and the second substrates. The inner electrode pad is connected to the electric element. The well penetrates the one of the first and the second substrates to the internal electrode. The external electrode pad is provided on a second surface of the one of the first and the second substrates and extends onto an inner wall of the well and being connected with the internal electrode pad.
摘要翻译：晶片级封装包括：第一衬底; 设置在所述第一基板上的电气元件; 第二基板; 内部电极焊盘; 一口井; 和外部电极焊盘。第二基板与其间具有预定间隙的第一基板相对。电元件设置在第一和第二基板之间。内部电极焊盘延伸到第一和第二衬底之一的第一表面上。内部电极焊盘连接到电气元件。井将第一和第二基板中的一个穿透到内部电极。外部电极焊盘设置在第一和第二基板之一的第二表面上并且延伸到阱的内壁并与内部电极焊盘连接。

85. 发明授权

US6165837A Semiconductor integrated memory manufacturing method and device 失效
标题翻译：半导体集成存储器制造方法和装置
公开(公告)号：US6165837A
公开(公告)日：2000-12-26
申请号：US276727
申请日：1999-03-26
申请人： Takashi Kawakubo , Noboru Fukushima
发明人： Takashi Kawakubo , Noboru Fukushima
IPC分类号： H01L21/8247 , H01L21/8242 , H01L21/8246 , H01L27/10 , H01L27/105 , H01L27/108 , H01L27/12 , H01L29/788 , H01L29/792
CPC分类号： H01L27/10858 , H01L27/10832 , H01L27/10867 , H01L27/10873 , H01L27/1203
摘要： A method of manufacturing a semiconductor integrated memory device including a plurality of a memory cells, and the semiconductor memory device, wherein each memory cell includes a transistor and a capacitor. The capacitor is formed of first and second electrodes and a dielectric layer. The first electrode and the dielectric layer are successively formed on a main surface of a semiconductor substrate by epitaxial growth. A region of the capacitor is removed to expose a region of the main surface of the substrate under the capacitor. A single crystal semiconductor layer is formed on the exposed region of the substrate by epitaxial growth, and the transistor is formed on the single crystal semiconductor layer, thereby to obtain a device having high integration density integration and preferred performance with high yield.
摘要翻译：一种制造包括多个存储单元的半导体集成存储器件和半导体存储器件的方法，其中每个存储单元包括晶体管和电容器。电容器由第一和第二电极和电介质层形成。第一电极和电介质层通过外延生长连续地形成在半导体衬底的主表面上。去除电容器的区域以暴露电容器下的衬底的主表面的区域。通过外延生长在衬底的暴露区域上形成单晶半导体层，并且在单晶半导体层上形成晶体管，从而获得具有高集成度集成的器件，并且以高产率获得优选的性能。

86. 发明授权

US06001461A Electronic parts and manufacturing method thereof 失效
标题翻译：电子零件及其制造方法
公开(公告)号：US06001461A
公开(公告)日：1999-12-14
申请号：US771388
申请日：1996-12-19
申请人： Hiroshi Toyoda , Hisashi Kaneko , Masahiko Hasunuma , Takashi Kawanoue , Hiroshi Tomita , Akihiro Kajita , Masami Miyauchi , Takashi Kawakubo , Sachiyo Ito
发明人： Hiroshi Toyoda , Hisashi Kaneko , Masahiko Hasunuma , Takashi Kawanoue , Hiroshi Tomita , Akihiro Kajita , Masami Miyauchi , Takashi Kawakubo , Sachiyo Ito
IPC分类号： H01L21/3205 , H01L23/528 , H01L23/532 , B32B9/00
CPC分类号： H01L23/532 , H01L21/32051 , H01L23/5283 , H01L23/53223 , H01L2924/0002 , Y10T428/2457 , Y10T428/24926
摘要： An electronic part comprising an amorphous thin film formed on a substrate; and a metal wiring formed on the surface of the amorphous thin film; wherein an interatomic distance corresponding to a peak of halo pattern appearing in diffraction measurement of the amorphous thin film approximately matches with a spacing of a particular crystal plane defined with the first nearest interatomic distance of the metal wiring. An electronic part provided with a metal wiring formed of highly orientated crystal wherein half or more of all grain boundaries are small angle grain boundaries defined by one of grain boundaries with a relative misorientation of 10.degree. or less in tilt, rotation and combination thereof around orientation axes of neighboring crystal grains; coincidence boundaries where a .SIGMA. value is 10 or less; and grain boundaries with a relative misorientation of 3.degree. or less from the coincidence boundary. A method for manufacturing an electronic part, comprising the step of depositing a conductor layer which is mainly formed of one selected from Al and Cu on a substrate via an insulative layer, a barrier layer, a contact layer or an amorphous thin film layer wherein one element selected from Ga, In, Cd, Bi, Pb, Sn and Tl is supplied before or during the deposition of the conductor layer.
摘要翻译：一种电子部件，包括形成在基板上的非晶薄膜; 以及形成在所述非晶薄膜的表面上的金属布线; 其中对应于在非晶薄膜的衍射测量中出现的晕轮图案的峰值的原子间距离大致与由金属布线的第一最接近的原子间距离限定的特定晶面的间隔相匹配。一种电子部件，其具有由高取向晶体形成的金属布线，其中所有晶界的一半以上是由倾斜，旋转及其组合在取向方向上的相位差取向为10°以下的晶界之一限定的小角度晶界相邻晶粒的轴; SIGMA值为10以下的重合边界; 晶界与重合边界的相对误差为3°以下。一种电子部件的制造方法，其特征在于，包括以下步骤：通过绝缘层，阻挡层，接触层或无定形薄膜层，在基板上沉积主要由选自Al和Cu的一个导体层形成的步骤，其中一个选自Ga，In，Cd，Bi，Pb，Sn和Tl的元素在导体层的沉积之前或期间提供。

87. 发明授权

US5986301A Thin film capacitor with electrodes having a perovskite structure and a metallic conductivity 失效
标题翻译：具有电极的薄膜电容器具有钙钛矿结构和金属导电性
公开(公告)号：US5986301A
公开(公告)日：1999-11-16
申请号：US858768
申请日：1997-05-19
申请人： Noburu Fukushima , Takashi Kawakubo , Tatsuo Shimizu
发明人： Noburu Fukushima , Takashi Kawakubo , Tatsuo Shimizu
IPC分类号： C30B29/22 , H01G4/33 , H01L21/02 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/105 , H01L27/108 , H01L27/115 , H01L27/12 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/1203 , H01L27/11502 , H01L27/11507 , H01L28/75 , H01L27/10808 , H01L27/10829 , H01L28/55
摘要： A thin film capacitor comprises a dielectric thin film having a perovskite structure sandwiched between top and bottom electrodes. At least one of the top and bottom electrodes is made of a conductive oxide material having a perovskite structure represented with a general formula of ABO.sub.3 in which A represents A-site elements composed of at least two of alkaline-earth and rare earth metals, and B represents B-site elements composed of at least one of transition metals. The capacitors involve a small leakage current, occupy a small area, and provide large capacitance. Accordingly, the capacitors realize a high integration semiconductor memory such as a DRAM of gigabit order.
摘要翻译：薄膜电容器包括夹在顶部和底部电极之间的具有钙钛矿结构的电介质薄膜。顶部电极和底部电极中的至少一个由具有由通式ABO 3表示的钙钛矿结构的导电氧化物材料制成，其中A表示由至少两种碱土金属和稀土金属组成的A位元素，以及 B表示由至少一种过渡金属组成的B位元素。电容器的漏电流小，占用面积小，并提供大电容。因此，电容器实现了诸如千兆级DRAM的高集成半导体存储器。

88. 发明授权

US5709958A Electronic parts 失效
标题翻译：电子零件
公开(公告)号：US5709958A
公开(公告)日：1998-01-20
申请号：US451528
申请日：1995-05-26
申请人： Hiroshi Toyoda , Hisashi Kaneko , Masahiko Hasunuma , Takashi Kawanoue , Hiroshi Tomita , Akihiro Kajita , Masami Miyauchi , Takashi Kawakubo , Sachiyo Ito
发明人： Hiroshi Toyoda , Hisashi Kaneko , Masahiko Hasunuma , Takashi Kawanoue , Hiroshi Tomita , Akihiro Kajita , Masami Miyauchi , Takashi Kawakubo , Sachiyo Ito
IPC分类号： H01L21/3205 , H01L23/528 , H01L23/532 , H01L29/43
CPC分类号： H01L21/32051 , H01L23/5283 , H01L23/532 , H01L23/53223 , H01L2924/0002 , Y10T428/12528 , Y10T428/12674 , Y10T428/12681
摘要： An electronic part comprising an amorphous thin film formed on a substrate; and a metal wiring formed on the surface of the amorphous thin film; wherein an interatomic distance corresponding to a peak of halo pattern appearing in diffraction measurement of the amorphous thin film approximately matches with a spacing of a particular crystal plane defined with the first nearest interatomic distance of the metal wiring. An electronic part provided with a metal wiring formed of highly orientated crystal wherein half or more of all grain boundaries are small angle grain boundaries defined by one of grain boundaries with a relative misorientation of 10.degree. or less in tilt, rotation and combination thereof around orientation axes of neighboring crystal grains; coincidence boundaries where a .SIGMA. value is 10 or less; and grain boundaries with a relative misorientation of 3.degree. or less from the coincidence boundary. A method for manufacturing an electronic part, comprising the step of depositing a conductor layer which is mainly formed of one selected from Al and Cu on a substrate via an insulative layer, a barrier layer, a contact layer or an amorphous thin film layer wherein one element selected from Ga, In, Cd, Bi, Pb, Sn and Tl is supplied before or during the deposition of the conductor layer.
摘要翻译：一种电子部件，包括形成在基板上的非晶薄膜; 以及形成在所述非晶薄膜的表面上的金属布线; 其中对应于在非晶薄膜的衍射测量中出现的晕轮图案的峰值的原子间距离大致与由金属布线的第一最接近的原子间距离限定的特定晶面的间隔相匹配。一种电子部件，其具有由高取向晶体形成的金属布线，其中所有晶界的一半以上是由倾斜，旋转及其组合在取向方向上的相位差取向为10°以下的晶界之一限定的小角度晶界相邻晶粒的轴; SIGMA值为10以下的重合边界; 晶界与重合边界的相对误差为3°以下。一种电子部件的制造方法，其特征在于，包括以下步骤：通过绝缘层，阻挡层，接触层或无定形薄膜层，在基板上沉积主要由选自Al和Cu的一个导体层形成的步骤，其中一个选自Ga，In，Cd，Bi，Pb，Sn和Tl的元素在导体层的沉积之前或期间提供。

89. 发明授权

US08102098B2 Piezoelectric-driven MEMS element 有权
标题翻译：压电式MEMS元件
公开(公告)号：US08102098B2
公开(公告)日：2012-01-24
申请号：US12578664
申请日：2009-10-14
申请人： Michihiko Nishigaki , Toshihiko Nagano , Hiroshi Ono , Takashi Kawakubo
发明人： Michihiko Nishigaki , Toshihiko Nagano , Hiroshi Ono , Takashi Kawakubo
IPC分类号： H01L41/08
CPC分类号： H01G5/18 , H01H57/00 , H01H2057/006 , H01L41/047 , H01L41/094
摘要： A piezoelectric-driven MEMS element includes a substrate, a beam, a fixed portion, a fixed electrode portion and a power source. The beam is provided with a lower electrode film, a lower piezoelectric film, a middle electrode film, an upper piezoelectric film and an upper electrode film. The fixed portion fixes one end of the beam onto the substrate so as to hold the beam with a gap above the substrate. The fixed electrode portion has a capacitive gap between the fixed electrode portion and the other end of the beam. In addition, at least one or two of the lower electrode film, the middle electrode film and the upper electrode film is thicker than the rest thereof.
摘要翻译：压电驱动MEMS元件包括基板，光束，固定部分，固定电极部分和电源。光束设置有下电极膜，下压电膜，中间电极膜，上压电膜和上电极膜。固定部分将光束的一端固定到基板上，以便在基板上方具有间隙地保持光束。固定电极部分在固定电极部分和光束的另一端之间具有电容性间隙。此外，下电极膜，中间电极膜和上电极膜中的至少一个或两个比其余部分厚。

90. 发明授权

US07772745B2 MEMS device with low operation voltage, large contact pressure force, and large separation force, and portable communication terminal with the MEMS device 失效
标题翻译：具有低工作电压，大接触压力和大分离力的MEMS器件，以及具有MEMS器件的便携式通信终端
公开(公告)号：US07772745B2
公开(公告)日：2010-08-10
申请号：US12040582
申请日：2008-02-29
申请人： Takashi Kawakubo , Toshihiko Nagano , Michihiko Nishigaki
发明人： Takashi Kawakubo , Toshihiko Nagano , Michihiko Nishigaki
IPC分类号： H01L41/08
CPC分类号： H01L41/094 , B81B3/001 , B81B2201/014 , H01G5/18 , H01H59/0009 , H01H2057/006 , H01H2059/0072
摘要： It is made possible to provide a MEMS device that has a low operation voltage, a large contact pressure force, and a large separation force. A MEMS device includes: a substrate; a supporting unit that is provided on the substrate; a fixed electrode that is provided on the substrate; an actuator that includes a first electrode, a first piezoelectric film formed on the first electrode, and a second electrode formed on the first piezoelectric film, one end of the actuator being fixed onto the substrate with the supporting unit, the actuator extending in a direction connecting the supporting unit and the fixed electrode, the first electrode being located to face the fixed electrode; and a stopper unit that is located above a straight line connecting the supporting unit and the fixed electrode, and is located on the substrate so as to face the first electrode.
摘要翻译：可以提供具有低操作电压，大的接触压力和大的分离力的MEMS器件。 MEMS器件包括：衬底; 设置在基板上的支撑单元; 设置在基板上的固定电极; 致动器，其包括第一电极，形成在第一电极上的第一压电膜和形成在第一压电膜上的第二电极，致动器的一端通过支撑单元固定到基板上，致动器沿着方向连接所述支撑单元和所述固定电极，所述第一电极位于与所述固定电极相对的位置; 以及位于连接支撑单元和固定电极的直线上方并且位于基板上以与第一电极相对的止动单元。

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