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81. 发明授权

US07928337B2 Apparatus for machining a workpiece using wire discharge including an upper and lower power supply unit 有权
标题翻译：用于使用包括上下电源单元的放线加工工件的装置
公开(公告)号：US07928337B2
公开(公告)日：2011-04-19
申请号：US11883999
申请日：2006-10-24
申请人： Yasuo Onodera , Tatsushi Sato , Yoshikazu Ukai , Takashi Hashimoto , Koichiro Hattori , Hisashi Yamada
发明人： Yasuo Onodera , Tatsushi Sato , Yoshikazu Ukai , Takashi Hashimoto , Koichiro Hattori , Hisashi Yamada
IPC分类号： B23H7/04 , B23H1/02
CPC分类号： B23H1/022 , B23H1/024 , B23H7/04
摘要： A wire-discharge machining apparatus controls a short circuit between a wire electrode and a workpiece and wire-breakage, and makes it easy to improve productivity, by performing power supply control to mix an upper-side power supply state in which a high-frequency pulse voltage is applied from an upper-side power supplying unit, a lower-side power supply state in which the high-frequency pulse voltage is applied from a lower-side power supplying unit, and a both-sides power supply state in which the high-frequency pulse voltage is applied to the wire electrode from both power supplying units in synchronization with each other during a period of electric discharge machining.
摘要翻译：放线加工装置控制线电极和工件之间的短路以及断线，并且通过进行电源控制来容易地提高生产率，以混合高频率的上侧电源状态从上侧供电单元施加脉冲电压，从下侧供电单元向其施加高频脉冲电压的下侧电源状态，以及双侧供电状态，在放电加工期间，高频脉冲电压从两个供电单元同时施加到线电极上。

82. 发明申请

US20110057166A1 NONPOLAR III-NITRIDE LIGHT EMITTING DIODES WITH LONG WAVELENGTH EMISSION 有权
标题翻译：具有长波长发射的非阳极III-NITRIDE发光二极管
公开(公告)号：US20110057166A1
公开(公告)日：2011-03-10
申请号：US12946683
申请日：2010-11-15
申请人： Hisashi Yamada , Kenji Iso , Shuji Nakamura
发明人： Hisashi Yamada , Kenji Iso , Shuji Nakamura
IPC分类号： H01L33/04 , B82Y99/00
CPC分类号： H01L33/06 , H01L33/16 , H01L33/32
摘要： A III-nitride film, grown on an m-plane substrate, includes multiple quantum wells (MQWs) with a barrier thickness of 27.5 nm or greater and a well thickness of 8 nm or greater. An emission wavelength can be controlled by selecting the barrier thickness of the MQWs. Device fabricated using the III-nitride film include nonpolar III-nitride light emitting diodes (LEDs) with a long wavelength emission.
摘要翻译：在m面衬底上生长的III族氮化物膜包括势垒厚度为27.5nm或更大的阱量子阱和8nm或更大的阱的多个量子阱（MQW）。可以通过选择MQW的阻挡层厚度来控制发射波长。使用III族氮化物膜制造的器件包括具有长波长发射的非极性III族氮化物发光二极管（LED）。

83. 发明授权

US07847280B2 Nonpolar III-nitride light emitting diodes with long wavelength emission 有权
标题翻译：具有长波长发射的非极性III族氮化物发光二极管
公开(公告)号：US07847280B2
公开(公告)日：2010-12-07
申请号：US12189038
申请日：2008-08-08
申请人： Hisashi Yamada , Kenji Iso , Shuji Nakamura
发明人： Hisashi Yamada , Kenji Iso , Shuji Nakamura
IPC分类号： H01L31/00
CPC分类号： H01L33/06 , H01L33/16 , H01L33/32
摘要： A III-nitride film, grown on an m-plane substrate, includes multiple quantum wells (MQWs) with a barrier thickness of 27.5 nm or greater and a well thickness of 8 nm or greater. An emission wavelength can be controlled by selecting the barrier thickness of the MQWs. Device fabricated using the III-nitride film include nonpolar III-nitride light emitting diodes (LEDs) with a long wavelength emission.
摘要翻译：在m面衬底上生长的III族氮化物膜包括势垒厚度为27.5nm或更大的阱量子阱和8nm或更大的阱的多个量子阱（MQW）。可以通过选择MQW的阻挡层厚度来控制发射波长。使用III族氮化物膜制造的器件包括具有长波长发射的非极性III族氮化物发光二极管（LED）。

84. 发明授权

US07795558B2 Electric discharge machine and electric discharge machining method 有权
标题翻译：放电加工机和放电加工方法
公开(公告)号：US07795558B2
公开(公告)日：2010-09-14
申请号：US11660698
申请日：2006-04-05
申请人： Yoji Nakajima , Hisakatsu Kawarai , Syuichiro Ishihara , Hisashi Yamada
发明人： Yoji Nakajima , Hisakatsu Kawarai , Syuichiro Ishihara , Hisashi Yamada
IPC分类号： B23H1/10
CPC分类号： B23H1/10 , B23H7/36 , C02F2001/422 , C02F2001/425 , C02F2001/427
摘要： In an electric discharge machining apparatus that machines a workpiece (1) by using a water-based dielectric fluid as a dielectric fluid while a voltage is being applied to a machining gap between an electrode (2) and the workpiece (1), the electric discharge machine includes:an anticorrosive power source section (26) that applies a predetermined voltage by taking the workpiece (1) as a cathode and taking as an anode an anticorrosive electrode (25) opposing the workpiece (1) with an insulator (24) therebetween;a dielectric fluid quality measuring instrument (22) that measures a quality of the dielectric fluid; anda dielectric fluid quality control section (16, 17, 18, 19, 20, 21, 23) that controls a pH level of the dielectric fluid to be within a range from 8.5 to 10.5 on the basis of the measured result of the dielectric fluid quality measuring instrument (22).
摘要翻译：在一种放电加工装置中，通过在电极（2）和工件（1）之间的加工间隙施加电压的同时，通过使用水性介电流体作为介质流体对工件（1）进行加工，放电机包括：通过将工件（1）作为阴极施加预定电压的防腐电源部分（26），并用绝缘体（24）作为与工件（1）相对的防腐蚀电极（25）作为阳极，之间; 电介质流体质量测量仪器（22），其测量介电流体的质量; 以及介电液质量控制部（16,17,18,19,20,21,23），其基于所述电介质的测定结果，将所述介质流体的pH值控制在8.5〜10.5的范围内流体质量测量仪（22）。

85. 发明申请

US20090277876A1 ELECTRICAL DISCHARGE MACHINING APPARATUS AND ELECTRICAL DISCHARGE MACHINING METHOD 有权
标题翻译：电动放料加工设备和放电加工方法
公开(公告)号：US20090277876A1
公开(公告)日：2009-11-12
申请号：US11910581
申请日：2006-10-18
申请人： Hisakatsu Kawarai , Syuichiro Ishihara , Yoji Nakajima , Hisashi Yamada
发明人： Hisakatsu Kawarai , Syuichiro Ishihara , Yoji Nakajima , Hisashi Yamada
IPC分类号： B23H1/08
CPC分类号： B23H1/10 , B23H1/02 , B23H1/08 , B23H11/003
摘要： An electrical-discharge machining apparatus for machining a workpiece (1), using an aqueous machining fluid as a machining fluid, while applying voltage across a machining gap formed between an electrode (2) and the workpiece (1), includes: an insulating means (12) for electrically insulating from the workpiece (1) a machine platen (11) where the workpiece is placed; a machining-fluid-property measuring instrument (22) for measuring a state of the machining fluid; and a machining-fluid-property control means (106,107,108,109,110,111,113) for controlling, based on a measured result from the machining-fluid-property measuring instrument (112), the pH of the machining fluid so as to be kept within 8.5 through 10.5.
摘要翻译： 1.一种放电加工装置，其特征在于，在电极（2）与所述工件（1）之间形成的加工间隙上施加电压的同时，使用水性加工液作为机械加工液加工工件（1）（12），用于与工件（1）电绝缘放置工件的机器压板（11）; 用于测量加工流体的状态的加工液体性质测量仪器（22）; 以及用于基于来自所述机械液体性质测量仪器（112）的测量结果控制所述加工液体的pH以保持在8.5至10.5中的加工液性质控制装置（106,107,108,109,110,111,113）。

86. 发明授权

US07550786B2 Compound semiconductor epitaxial substrate 有权
标题翻译：化合物半导体外延衬底
公开(公告)号：US07550786B2
公开(公告)日：2009-06-23
申请号：US10554706
申请日：2004-04-07
申请人： Hisashi Yamada , Takenori Osada , Noboru Fukuhara
发明人： Hisashi Yamada , Takenori Osada , Noboru Fukuhara
IPC分类号： H01L29/739 , H01L31/072
CPC分类号： H01L29/66318 , H01L29/0821 , H01L29/207 , H01L29/7371
摘要： A compound semiconductor epitaxial substrate including a substrate, and a sub-collector layer, a collector layer, a base layer, an emitter layer and a contact layer(s) formed in this order on the substrate, the compound semiconductor epitaxial substrate having an oxygen-containing layer between the substrate and the sub-collector layer.
摘要翻译：一种化合物半导体外延基板，包括在基板上依次形成的基板，副集电极层，集电极层，基极层，发射极层和接触层，具有氧的化合物半导体外延基板在基板和副集电极层之间。

87. 发明授权

US07259213B2 Indole resins epoxy resins and resin compositions containing the same 有权
标题翻译：吲哚树脂环氧树脂和含有它们的树脂组合物
公开(公告)号：US07259213B2
公开(公告)日：2007-08-21
申请号：US10504272
申请日：2003-02-10
申请人： Masashi Kaji , Hisashi Yamada
发明人： Masashi Kaji , Hisashi Yamada
IPC分类号： C08G12/26 , C08G59/02 , C08G63/00 , C08L61/06 , C07D209/04
CPC分类号： C08G73/0672 , C07D209/08 , C08G59/506 , C08G61/122 , C08G61/124 , C08L61/04 , C08L63/00 , C08L65/00 , H05K1/0326
摘要： This invention relates to epoxy resins containing indole as structural unit, indole resins and resin compositions containing said epoxy resins and indole resins useful for applications such as laminating, molding, casting and adhesion on account of their excellent fire retardance, adhesiveness, moisture resistance and heat resistance.The indole resins of this invention and the epoxy resins obtained therefrom are represented by the following general formulas I and II wherein R1 is H, alkyl or the like, X is a crosslinking group represented by —C(R2R3)— or C(R4R5)—Ar—C(R4R5)— (wherein R2-R5 are H, alkyl or the like and Ar is a benzene or biphenyl ring), G is glycidyl group and n is an integer of 1-20.
摘要翻译：本发明涉及含有吲哚作为结构单元的环氧树脂，吲哚树脂和含有所述环氧树脂和吲哚树脂的树脂组合物，由于其优异的阻燃性，粘合性，耐湿性和热性，它们可用于层压，模塑，铸造和粘合等应用抵抗性。本发明的吲哚树脂和由其获得的环氧树脂由以下通式I和II表示，其中R 1是H，烷基等，X是由-C（ R 2 R 3） - 或C（R 4 R 5） - Ar-C（R a SUB >其中R 2〜R 5是H，烷基等，Ar是苯或联苯环），G为缩水甘油基，n为1-20的整数。

88. 发明授权

US07078645B2 Working liquid ejector of wire electric discharge machine 失效
标题翻译：线放电机工作液体喷射器
公开(公告)号：US07078645B2
公开(公告)日：2006-07-18
申请号：US10499946
申请日：2002-03-28
申请人： Hisashi Yamada , Ryogo Koba , Takuji Magara , Masao Akiyoshi
发明人： Hisashi Yamada , Ryogo Koba , Takuji Magara , Masao Akiyoshi
IPC分类号： B23H7/10
CPC分类号： B23H7/101
摘要： A machining-fluid ejection device for a wire electric discharge machining apparatus includes a nozzle for ejecting machining-fluid into an inter-electrode gap between a workpiece (W) and a wire electrode (E), a casing (16) fixed to a machining head (15) disposed above or below the workpiece (W), a coupling member (18) for coupling the casing (16) and a nozzle (17), having a predetermined elastic coefficient, and deforming according to the machining-fluid pressure; an assemblage of the coupling member (18) and the nozzle (17) has hollow portions, formed with an inlet side internal diameter (D2) and an outlet side internal diameter (D1) on a machining-fluid inlet side and outlet side respectively, whose sectional areas do not change, and a hollow portion, formed with a minimum internal diameter (D0) between the machining-fluid inlet side and the outlet side, whose sectional area does not change. Machining productivity may be raised for nozzle contact machining and nozzle separation machining.
摘要翻译：一种用于线材放电加工设备的机加工液喷射装置，包括：用于将加工流体喷射到工件（W）和线电极（E）之间的电极间间隙中的喷嘴;固定到加工设置在工件（W）的上方或下方的头部（15），用于联接壳体（16）的联接构件（18）和具有预定弹性系数的喷嘴（17），并根据加工液压力变形; 联接构件（18）和喷嘴（17）的组合具有在机械流体入口侧和出口侧形成有入口侧内径（D 2）和出口侧内径（D 1）的中空部分别具有截面积不变的中空部分和在切削面积不变的加工流体入口侧和出口侧之间形成有最小内径（D 0）的中空部。可以提高喷嘴接触加工和喷嘴分离加工的加工生产率。

89. 发明申请

US20060120259A1 Optical disc, optical disc apparatus, and optical disc reproducing method 审中-公开
标题翻译：光盘，光盘装置和光盘再现方法
公开(公告)号：US20060120259A1
公开(公告)日：2006-06-08
申请号：US11293366
申请日：2005-12-05
申请人： Toshihiro Sugaya , Hisashi Yamada
发明人： Toshihiro Sugaya , Hisashi Yamada
IPC分类号： G11B7/24
CPC分类号： G11B7/24038
摘要： A single-sided dual layer optical disc of the invention comprises a first light transmission layer, a first recording layer which is accessed with a first laser beam, a second light transmission layer, and a second recording layer which is accessed with a second laser beam, these layers being arranged in that order from an incidence plane in the direction of incidence, the distance from the incidence plane to the second recording layer being 570 to 630 Am, and the areal recording density of the first recording layer being five times or more as high as that of the second recording layer.
摘要翻译：本发明的单面双层光盘包括第一光透射层，用第一激光束访问的第一记录层，第二光透射层和第二记录层，其被第二激光束这些层以入射方向从入射面依次排列，从入射面到第二记录层的距离为570〜630Am，第一记录层的面积记录密度为五倍以上与第二记录层的高度一样高。

90. 发明申请

US20060001044A1 Method for manufacturing compound semiconductor wafer and compound semiconductor device 有权
标题翻译：复合半导体晶片和化合物半导体器件的制造方法
公开(公告)号：US20060001044A1
公开(公告)日：2006-01-05
申请号：US10524013
申请日：2003-08-01
申请人： Hisashi Yamada , Noboru Fukuhara
发明人： Hisashi Yamada , Noboru Fukuhara
IPC分类号： H01L29/47 , H01L21/336 , H01L29/739 , H01L21/331 , H01L29/74
CPC分类号： H01L29/7371 , H01L21/02395 , H01L21/02463 , H01L21/02546 , H01L21/02579 , H01L21/0262 , H01L29/66318
摘要： A method for producing a compound semiconductor wafer used for production of HBT by vapor growth of a sub-collector layer, a collector layer, a base layer and an emitter layer in this turn on a compound semiconductor substrate using MOCVD method wherein the base layer is grown as a p-type compound semiconductor thin film layer containing at least one of Ga, Al and In as a Group III element and As as a Group V element under such growth conditions that the growth rate gives a growth determined by a Group V gas flow rate-feed.
摘要翻译：使用MOCVD法在化合物半导体衬底上通过副集电极层，集电极层，基极层和发射极层的蒸气生长来制造用于生产HBT的化合物半导体晶片的方法，其中基底层是在作为V族元素的Ga，Al和In中的至少一种含有III族元素的As和作为V族元素的p型化合物半导体薄膜层中生长，生长速率为V族气体流量进料。

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