专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

81. 发明申请

US20110269274A1 THIN FILM TRANSISTORS HAVING MULTIPLE DOPED SILICON LAYERS 有权
标题翻译：具有多层掺杂硅层的薄膜晶体管
公开(公告)号：US20110269274A1
公开(公告)日：2011-11-03
申请号：US12913846
申请日：2010-10-28
申请人： Gaku Furuta , Soo Young Choi , Omori Kenji
发明人： Gaku Furuta , Soo Young Choi , Omori Kenji
IPC分类号： H01L21/336
CPC分类号： H01L29/66765 , G02F1/1362 , H01L29/78618
摘要： Embodiments of the present invention generally relate to a TFT and a method for its fabrication. The TFT disclosed herein is a silicon based TFT in which the active channel comprises amorphous silicon. Over the amorphous silicon, multiple layers of doped silicon are deposited in which the resistivity of the doped silicon layers is higher at the interface with the amorphous silicon layer as compared to the interface with the source and drain electrodes. Alternatively, a single doped silicon layer is deposited over the amorphous silicon in which the properties of the single doped layer change throughout the thickness. It is better to have a lower resistivity at the interface with the source and drain electrodes, but lower resistivity usually means less substrate throughput. By utilizing multiple or graded layers, low resistivity can be achieved. The embodiments disclosed herein include low resistivity without sacrificing substrate throughput.
摘要翻译：本发明的实施例一般涉及TFT及其制造方法。本文公开的TFT是其中有源沟道包括非晶硅的硅基TFT。在非晶硅上，沉积了多层掺杂硅，其中掺杂硅层的电阻率在与非晶硅层的界面处比与源极和漏极的界面相比更高。或者，在非晶硅上沉积单个掺杂的硅层，其中单个掺杂层的性质在整个厚度上变化。在与源极和漏极的界面处具有较低的电阻率是更好的，但较低的电阻率通常意味着较少的衬底生产量。通过利用多层或分层，可以实现低电阻率。本文公开的实施例包括低电阻率而不牺牲基板生产量。

82. 发明授权

US07988875B2 Differential etch rate control of layers deposited by chemical vapor deposition 有权
标题翻译：通过化学气相沉积沉积的层的差分蚀刻速率控制
公开(公告)号：US07988875B2
公开(公告)日：2011-08-02
申请号：US12027964
申请日：2008-02-07
申请人： Soo Young Choi , Gaku Furuta
发明人： Soo Young Choi , Gaku Furuta
IPC分类号： C23F3/00
CPC分类号： H01L21/31116 , C03C17/34 , C03C2218/33 , C23C16/308 , C23C16/345 , C23C16/401 , H01L21/31111
摘要： A method and apparatus is provided for controlling the etch profile of a multilayer layer stack by depositing a first and second material layer with differential etch rates in the same or different processing chamber. In one embodiment of the invention, a process for etching substrate material is provided including depositing a first silicon-containing material layer having a first etch rate on the substrate surface from a nitrogen-containing precursor at a first flow rate and a silicon-containing precursor, depositing a second silicon-containing material layer having a second etch rate different than the first etch rate on the first silicon-containing material layer from the nitrogen-containing precursor at a second flow rate different than the first flow rate and the silicon-containing precursor, etching the first silicon-containing material layer and the second silicon-containing material layer, and forming a taper etch profile in the first silicon-containing material layer and the second silicon-containing material layer.
摘要翻译：提供了一种方法和装置，用于通过在相同或不同的处理室中沉积差分蚀刻速率的第一和第二材料层来控制多层堆叠的蚀刻轮廓。在本发明的一个实施例中，提供了一种用于蚀刻衬底材料的方法，包括：以第一流速从含氮前体沉积具有第一蚀刻速率的第一含硅材料层，并在第一流速下沉积含硅前体在第一含硅材料层上以不同于第一流速的第二流量从含氮前体沉积具有与第一蚀刻速率不同的第二蚀刻速率的第二含硅材料层，蚀刻第一含硅材料层和第二含硅材料层，并在第一含硅材料层和第二含硅材料层中形成锥形蚀刻轮廓。

83. 发明授权

US07902991B2 Frequency monitoring to detect plasma process abnormality 有权
标题翻译：频率监测检测等离子体过程异常
公开(公告)号：US07902991B2
公开(公告)日：2011-03-08
申请号：US11682290
申请日：2007-03-05
申请人： Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
发明人： Beom Soo Park , Soo Young Choi , John M. White , Hong Soon Kim , James Hoffman
IPC分类号： G08B21/00
CPC分类号： H01J37/32174 , H01J37/32935 , H03H7/40
摘要： Abnormal conditions within an RF-powered plasma process chamber are detected by detecting whether the frequency of a variable-frequency RF power supply moves outside established lower and upper limits. In a first aspect, a first pair of lower and upper limits are established as a function of the frequency of the power supply sampled after a new process step begins or after a sample control signal changes state. In a second aspect, a second pair of lower and upper limits are not adapted to the frequency of the power supply. Both aspects preferably are used together to detect different occurrences of abnormal conditions.
摘要翻译：通过检测可变频率RF电源的频率是否移动到建立的下限和上限之外，来检测RF供电的等离子体处理室内的异常情况。在第一方面，根据在新处理步骤开始之后或在采样控制信号改变状态之后采样的电源的频率，建立第一对下限和上限。在第二方面，第二对下限和上限不适合电源的频率。两个方面优选一起用于检测异常状况的不同出现。

84. 发明申请

US20100197145A1 SILICON NITRIDE PASSIVATION FOR A SOLAR CELL 失效
标题翻译：用于太阳能电池的氮化硅钝化
公开(公告)号：US20100197145A1
公开(公告)日：2010-08-05
申请号：US12757740
申请日：2010-04-09
申请人： Lisong Zhou , Sangeeta Dixit , Soo Young Choi
发明人： Lisong Zhou , Sangeeta Dixit , Soo Young Choi
IPC分类号： H01L21/31
CPC分类号： C23C16/345 , H01L31/1868 , Y02E10/50 , Y02P70/521
摘要： A silicon nitride layer may be formed with a suitable refractive index, mass density, and hydrogen concentration so that the layer may serve as an ARC/passivation layer on a solar cell substrate. The silicon nitride layer may be formed on a solar cell substrate by adding a hydrogen gas diluent to a conventional precursor gas mixture during the deposition process. Alternatively, the silicon nitride layer may be formed on a solar cell substrate by using a precursor gas mixture consisting essentially of silane and nitrogen. To improve deposition chamber throughput, the silicon nitride layer may be a dual stack film that includes a low-hydrogen interface layer and a thicker bulk silicon nitride layer. Placing a plurality of solar cell substrates on a substrate carrier and transferring the substrate carrier into the deposition chamber may further enhance deposition chamber throughput.
摘要翻译：可以形成具有合适的折射率，质量密度和氢浓度的氮化硅层，使得该层可以用作太阳能电池基板上的ARC /钝化层。氮化硅层可以通过在沉积工艺期间向常规的前体气体混合物中加入氢气稀释剂而形成在太阳能电池基板上。或者，可以通过使用主要由硅烷和氮组成的前体气体混合物在太阳能电池基板上形成氮化硅层。为了提高沉积室的生产量，氮化硅层可以是包括低氢界面层和较厚体积氮化硅层的双层叠膜。将多个太阳能电池基板放置在基板载体上并将基板载体转移到沉积室中可进一步增强沉积室的生产量。

85. 发明授权

US07741144B2 Plasma treatment between deposition processes 失效
标题翻译：沉积工艺之间的等离子体处理
公开(公告)号：US07741144B2
公开(公告)日：2010-06-22
申请号：US12263253
申请日：2008-10-31
申请人： Soo Young Choi , Yong-Kee Chae , Shuran Sheng , Liwei Li
发明人： Soo Young Choi , Yong-Kee Chae , Shuran Sheng , Liwei Li
IPC分类号： H01L27/142
CPC分类号： H01L21/0262 , H01L21/02532 , H01L21/02576 , H01L21/02595 , H01L21/02667 , H01L31/0236 , H01L31/02366 , H01L31/075 , H01L31/076 , H01L31/186 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： Embodiments of the present invention include an improved method of forming a thin film solar cell device using a plasma processing treatment between two or more deposition steps. Embodiments of the invention also generally provide a method and apparatus for forming the same. The present invention may be used to advantage to form other single junction, tandem junction, or multi-junction solar cell devices.
摘要翻译：本发明的实施例包括使用在两个或更多个沉积步骤之间的等离子体处理处理来形成薄膜太阳能电池器件的改进方法。本发明的实施例还通常提供用于形成该方法和装置的方法和装置。本发明可用于形成其它单结，串联结或多结太阳能电池器件。

86. 发明授权

US07732010B2 Method for supporting a glass substrate to improve uniform deposition thickness 有权
标题翻译：支撑玻璃基板以改善均匀沉积厚度的方法
公开(公告)号：US07732010B2
公开(公告)日：2010-06-08
申请号：US11406136
申请日：2006-04-18
申请人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , Robert I. Greene , John M. White , Dong-Kil Yim , Chung-Hee Park , Kam Law
发明人： Soo Young Choi , Beom Soo Park , Quanyuan Shang , Robert I. Greene , John M. White , Dong-Kil Yim , Chung-Hee Park , Kam Law
IPC分类号： C23C16/00
CPC分类号： H01J37/32082 , C23C16/4581 , C25D11/04 , C25D11/16 , C25D11/18
摘要： A method for supporting a glass substrate comprising providing a substrate support having an aluminum body, a substrate contact area formed on the surface of the substrate support, wherein the process of forming the substrate contact area comprises forming an anodization layer on a surface region of the aluminum body, the coating having a thickness of between about 0.3 mils and about 2.16 mils, wherein the surface region substantially corresponds to the substrate contact area, and preparing the anodization layer disposed over the surface region to a surface roughness between about 88 micro-inches and about 230 micro-inches, followed by anodizing the substrate surface to said thickness, positioning the substrate support adjacent a substrate processing region in a substrate processing chamber, wherein the substrate contact area is adjacent the substrate processing region, positioning the glass substrate on the substrate contact area.
摘要翻译：一种用于支撑玻璃基板的方法，包括提供具有铝体的基板支撑件，形成在所述基板支撑件的表面上的基板接触区域，其中形成所述基板接触区域的工艺包括在所述基板支撑件的表面区域上形成阳极氧化层铝体，所述涂层具有在约0.3密耳和约2.16密耳之间的厚度，其中所述表面区域基本上对应于所述基底接触面积，以及将所述阳极氧化层设置在所述表面区域上方的表面粗糙度在约88微英寸约230微英寸，然后将基板表面阳极化至所述厚度，将基板支撑件邻近基板处理区域定位在基板处理室中，其中基板接触区域与基板处理区域相邻，将玻璃基板定位在基板处理区域上基板接触面积。

87. 发明授权

US07655542B2 Methods and apparatus for depositing a microcrystalline silicon film for photovoltaic device 失效
标题翻译：用于沉积光伏器件微晶硅膜的方法和设备
公开(公告)号：US07655542B2
公开(公告)日：2010-02-02
申请号：US11426127
申请日：2006-06-23
申请人： Soo Young Choi , Takako Takehara , John M. White , Yong Kee Chae
发明人： Soo Young Choi , Takako Takehara , John M. White , Yong Kee Chae
IPC分类号： H01L21/20 , H01L21/36
CPC分类号： H01L21/02579 , C23C16/24 , C30B25/105 , C30B29/06 , H01J37/32082 , H01J37/32449 , H01J37/32495 , H01L21/0237 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L31/1824 , Y02E10/545 , Y02P70/521
摘要： Methods for depositing a microcrystalline silicon film layer with improved deposition rate and film quality are provided in the present invention. Also, photovoltaic (PV) cell having a microcrystalline silicon film is provided. In one embodiment, the method produces a microcrystalline silicon film on a substrate at a deposition rate greater than about 20 nm per minute, wherein the microcrystalline silicon film has a crystallized volume between about 20 percent to about 80 percent.
摘要翻译：在本发明中提供了具有改进的沉积速率和膜质量的沉积微晶硅膜层的方法。此外，提供具有微晶硅膜的光伏（PV）电池。在一个实施例中，该方法以大于约20nm /分钟的沉积速率在衬底上产生微晶硅膜，其中微晶硅膜的结晶体积在约20％至约80％之间。

88. 发明申请

US20090258162A1 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：US20090258162A1
公开(公告)日：2009-10-15
申请号：US12422183
申请日：2009-04-10
申请人： GAKU FURUTA , Young-Jin Choi , Soo Young Choi , Beom Soo Park , John M. White , Suhail Anwar , Robin L. Tiner
发明人： GAKU FURUTA , Young-Jin Choi , Soo Young Choi , Beom Soo Park , John M. White , Suhail Anwar , Robin L. Tiner
IPC分类号： C23C16/44 , C23C16/00 , H05H1/24
CPC分类号： H01J37/32357 , C23C16/4405 , C23C16/507 , H01J37/3244 , H01J2237/3321
摘要： The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.
摘要翻译：本发明通常包括等离子体增强化学气相沉积（PECVD）处理室，其具有在与气源分开的位置处连接到背板的RF功率源。通过在与RF功率分开的位置处将气体供给到处理室中，可以减少通向处理室的气体管中的寄生等离子体形成。气体可以在多个位置被供给到腔室。在每个位置，气体可以通过远程等离子体源以及RF扼流器或RF电阻器从气体源馈送到处理室。

89. 发明申请

US20090197015A1 METHOD AND APPARATUS FOR CONTROLLING PLASMA UNIFORMITY 审中-公开
标题翻译：用于控制等离子体均匀性的方法和装置
公开(公告)号：US20090197015A1
公开(公告)日：2009-08-06
申请号：US12344210
申请日：2008-12-24
申请人： Jozef Kudela , Gaku Furuta , Carl A. Sorensen , Soo Young Choi , John M. White
发明人： Jozef Kudela , Gaku Furuta , Carl A. Sorensen , Soo Young Choi , John M. White
IPC分类号： C23C16/513
CPC分类号： H01J37/32623 , C23C16/345 , C23C16/5096 , H01J37/32082
摘要： Systems, methods, and apparatus involve a plasma processing chamber for depositing a film on a substrate. The plasma processing chamber includes a lid assembly having a ground plate, a backing plate, and a non-uniformity existing between the ground plate and the backing plate. The non-uniformity may interfere with RF wave uniformity and cause an impedance imbalance between portions of the ground plate and backing plate. The non-uniformity may include a structure or a reduced spacing of non-uniform surfaces. A reduced spacing of non-uniform surfaces may exist where a first distance between the ground plate and the backing plate at a first end is different from a second distance between the ground plate and the backing plate at a second end. The structure may be from 2 cm to 10 cm thick, cover from 20% to 50% of the backing plate, and be located away from a discontinuity existing inside the chamber.
摘要翻译：系统，方法和装置包括用于在基板上沉积膜的等离子体处理室。等离子体处理室包括具有接地板，背板和存在于接地板和背板之间的不均匀性的盖组件。不均匀性可能会干扰RF波均匀性，并导致接地板和背板的部分之间的阻抗不平衡。不均匀性可以包括非均匀表面的结构或减小的间隔。存在不均匀表面的减小的间隔，其中在第一端处的接地板和背板之间的第一距离在第二端处不同于接地板和背板之间的第二距离。该结构可以是2cm至10cm厚，覆盖背板的20％至50％，并且位于远离存在于腔室内的不连续处。

90. 发明申请

US20090107955A1 OFFSET LINER FOR CHAMBER EVACUATION 审中-公开
标题翻译：用于室内休闲的偏心衬里
公开(公告)号：US20090107955A1
公开(公告)日：2009-04-30
申请号：US12205414
申请日：2008-09-05
申请人： ROBIN L. TINER , Suhail Anwar , Gaku Furuta , Young Jin Choi , Beom Soo Park , Soo Young Choi , John M. White
发明人： ROBIN L. TINER , Suhail Anwar , Gaku Furuta , Young Jin Choi , Beom Soo Park , Soo Young Choi , John M. White
IPC分类号： B44C1/22 , C23C16/455 , C23C16/44 , C23F1/08
CPC分类号： H01J37/32357 , C23C16/4404 , H01J37/32449 , H01J37/32623 , H01J37/32834
摘要： The present invention generally includes a chamber liner spaced from a chamber wall to permit processing gases to be pulled between the chamber liner and the chamber wall when withdrawing gases from the processing chamber. When the vacuum pump is below the susceptor, processing gases will be drawn below the susceptor and may lead to undesired deposition onto process chamber components. Additionally, the processing gases will be pulled past the slit valve opening and potentially deposit within the slit valve opening. When material deposits in the slit valve opening, flaking may occur and contaminate the substrates. By drawing the processing gases along the sidewalls other than the one having the slit valve opening therethrough, undesired deposition on the slit valve opening may be reduced.
摘要翻译：本发明通常包括与室壁间隔开的腔室衬套，以便当从处理腔室排出气体时允许处理气体在腔室衬套和室壁之间被拉动。当真空泵在基座下方时，处理气体将被拉到基座下方，并可能导致不希望的沉积到处理室部件上。此外，处理气体将被拉过狭缝阀开口并可能沉积在狭缝阀开口内。当材料沉积在狭缝阀开口中时，会发生剥落并污染基板。通过沿着具有狭缝阀开口的侧壁以外的侧壁吸收处理气体，可以减少狭缝阀开口上的不期望的沉积。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式